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    • 4. 发明申请
    • CONDUCTIVE PASTE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE SAME
    • 用于制造使用该半导体器件的半导体器件的导电胶和方法
    • WO2015108205A1
    • 2015-07-23
    • PCT/JP2015/051743
    • 2015-01-15
    • NAMICS CORPORATION
    • DIETZ, RaymondPATELKA, MaciejTRUMBLE, Cathy ShawSAKAI, NoriyukiYAMAGUCHI, Hiroshi
    • H01B1/22
    • C03C8/24C03C3/122C03C3/125C03C3/127C03C4/14C03C8/02C03C8/18C03C2204/00C03C2205/00C09J9/02H01B1/16H01B1/22H01L24/83H01L2224/83851H01L2224/83948H01L2924/10272
    • Provided are a conductive paste which does not contain an injurious material, such as lead, arsenic, tellurium, or antimony, and which can not only achieve bonding at a relatively low temperature (for example, at 370 °C or lower) but also maintain the bond strength even at a relatively high temperature (for example, at 300 to 360 °C), and a method for producing a semiconductor device using the conductive paste. A conductive paste comprising (A) conductive particles, (B) a glass frit containing substantially no lead, arsenic, tellurium, and antimony, and (C) a solvent, wherein the glass frit (B) has a remelting temperature of 320 to 360 °C, wherein the remelting temperature is indicated by the peak top of at least one endothermic peak having an endotherm of 20 J/g or more in a DSC curve as measured by a differential scanning calorimeter. The conductive paste preferably further comprises (D) an oxide selected from the group consisting of tin oxide, zinc oxide, indium oxide, and copper oxide. Glass frit (B) preferably comprises (B-1) Ag 2 O, (B-2) V 2 O 5 , and (B-3) MoO 3 .
    • 提供了不含铅,砷,碲或锑等有害物质的导电性糊剂,不仅能够在较低的温度(例如370℃以下)下进行接合,而且还能够维持 即使在相对高的温度(例如,在300至360℃)下的粘合强度,以及使用导电浆料的半导体器件的制造方法。 一种导电浆料,其包含(A)导电颗粒,(B)基本上不含铅,砷,碲和锑的玻璃料,和(C)溶剂,其中所述玻璃料(B)的重熔温度为320至360℃ ℃,其中通过差示扫描量热计测量的DSC曲线中,至少一个吸热峰的吸收峰的峰顶由20℃/ g以上的吸热峰表示。 导电性糊料优选还包含(D)选自氧化锡,氧化锌,氧化铟和氧化铜的氧化物。 玻璃料(B)优选包含(B-1)Ag2O,(B-2)V2O5和(B-3)MoO3。