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1. 发明专利

SG11202112956WA AUTOMATED CIRCUIT GENERATION 未知
公开(公告)号：SG11202112956WA
公开(公告)日：2021-12-30
申请号：SG11202112956W
申请日：2020-05-28
申请人： CELERA INC
发明人： MACRAE CALUM , LOCASCIO JIM , MASON KAREN , MASON JOHN , PHILPOTT RICHARD , HUSSAIN MUHAMMED ABID
IPC分类号： G06F30/323 , G06F30/30 , G06F30/327 , G06F30/3308 , G06F30/367 , G06F30/39 , G06F30/398
摘要： Automated circuit and layout generation is disclosed. Various embodiments may include a computer system and/or method for generating a circuit layout comprising specifying a circuit schematic to be converted to a circuit layout, receiving a layout script associated with the circuit schematic, the layout script configured to position a plurality of layout instances generated from the circuit schematic, converting the circuit schematic into the plurality of layout instances; and positioning the plurality of layout instances based on the layout script to produce the circuit layout. A circuit may be produced by fabricating a circuit using the layout.

2. 发明专利

AU9562798A Method and system for improving a transistor model 未知
公开(公告)号：AU9562798A
公开(公告)日：1999-06-16
申请号：AU9562798
申请日：1998-10-13
申请人： ERICSSON TELEFON AB L M
发明人： HJELMGREN HANS , JACOBSON LARS-PETER , SJODIN HIKAN , EKLUND ANDERS
IPC分类号： G01R31/26 , G01R31/28 , G06F30/367 , H01L21/331 , H01L21/66 , H01L29/00 , H01L29/73 , G06F17/15
摘要： An improved system for simulating bipolar transistors with a variation in Early voltage as a function of collector/emitter bias voltage is disclosed. The simulation is based upon a standard Gummel-Poon model and is improved by an Early voltage extension, where the constant Early voltage is replaced by an Early voltage that is divided into several regions. The Early voltage is adjusted to fit the actual variations of the measured Early voltage characteristics of a bipolar transistor. The Early voltage within each region is used for calculating the bipolar transistors base charge which then is used to simulate the performance of the bipolar transistor. The regions may be linked together by choice of boundary conditions.

3. 发明专利

DE102019212783A1 Verfahren und Vorrichtung zum Bereitstellen eines Verhaltensmodells für die Simulation von elektromagnetischen Störemissionen einer elektrischen bzw. elektronischen Komponente 未知
公开(公告)号：DE102019212783A1
公开(公告)日：2021-03-04
申请号：DE102019212783
申请日：2019-08-27
申请人： BOSCH GMBH ROBERT
发明人： AICHELE HERMANN , HILLENBRAND PHILIPP
IPC分类号： G01R29/08 , G01R23/16 , G01R31/00 , G06F30/367
摘要： Die Erfindung betrifft ein Verfahren zum Bereitstellen eines Verhaltensmodells, insbesondere eines EMV-Verhaltensmodells, in Form von Modelldaten für die Simulation einer durch das Verhaltensmodell beschriebenen elektrischen oder elektronischen Komponente (1) in einer Simulationsvorrichtung, wobei das Verhaltensmodell das Verhalten an einem oder mehreren elektrischen Anschlüssen (A) der Komponente (1) beschreibt, indem das elektrische Verhalten an jedem der Anschlüsse (A) der Komponente durch einen Anschluss-Äquivalenzschaltkreis als die Wirkung von komplexen, frequenzabhängigen elektrischen Größen von passiven elektrischen Bauelementen, insbesondere Admittanzen oder Impedanzen, und eines Quellenelements, insbesondere einer Spannungs- und/oder einer Stromquelle, beschrieben wird, wobei das Verhaltensmodell einen zusätzlichen virtuellen Steueranschluss vorsieht, durch den in der Simulation eine oder mehrere der Spannungs- und/oder Stromquellen steuerbar ist.

4. 发明专利

SE511322C3 未知
公开(公告)号：SE511322C3
公开(公告)日：1999-09-13
申请号：SE9704465
申请日：1997-12-01
申请人： ERICSSON TELEFON AB L M
发明人： HJELMGREN HANS , JACOBSON LARS-PETER , SJOEDIN HAAKAN , EKLUND ANDERS
IPC分类号： G01R31/28 , G06F30/367 , G01R31/26 , H01L21/331 , H01L21/66 , H01L29/00 , H01L29/73 , G06F17/50
摘要： An improved system for simulating bipolar transistors with a variation in Early voltage as a function of collector/emitter bias voltage is disclosed. The simulation is based upon a standard Gummel-Poon model and is improved by an Early voltage extension, where the constant Early voltage is replaced by an Early voltage that is divided into several regions. The Early voltage is adjusted to fit the actual variations of the measured Early voltage characteristics of a bipolar transistor. The Early voltage within each region is used for calculating the bipolar transistors base charge which then is used to simulate the performance of the bipolar transistor. The regions may be linked together by choice of boundary conditions.

5. 发明专利

ES2931950T3 Generación de diagramas de red eléctrica unifiliares 未知
公开(公告)号：ES2931950T3
公开(公告)日：2023-01-05
申请号：ES13874719
申请日：2013-02-06
申请人： SCHNEIDER ELECTRIC USA INC
发明人： MCQUILLAN JAYME
IPC分类号： G06F30/367

6. 发明专利

SE511322C2 未知
公开(公告)号：SE511322C2
公开(公告)日：1999-09-13
申请号：SE9704465
申请日：1997-12-01
申请人： ERICSSON TELEFON AB L M
发明人： HJELMGREN HANS , JACOBSON LARS-PETER , SJOEDIN HAAKAN , EKLUND ANDERS
IPC分类号： G01R31/28 , G06F30/367 , G01R31/26 , H01L21/331 , H01L21/66 , H01L29/00 , H01L29/73 , G06F17/50
摘要： An improved system for simulating bipolar transistors with a variation in Early voltage as a function of collector/emitter bias voltage is disclosed. The simulation is based upon a standard Gummel-Poon model and is improved by an Early voltage extension, where the constant Early voltage is replaced by an Early voltage that is divided into several regions. The Early voltage is adjusted to fit the actual variations of the measured Early voltage characteristics of a bipolar transistor. The Early voltage within each region is used for calculating the bipolar transistors base charge which then is used to simulate the performance of the bipolar transistor. The regions may be linked together by choice of boundary conditions.

7. 发明专利

CA2318330A1 METHOD AND SYSTEM FOR IMPROVING A TRANSISTOR MODEL 未知
公开(公告)号：CA2318330A1
公开(公告)日：1999-06-10
申请号：CA2318330
申请日：1998-10-13
申请人： ERICSSON TELEFON AB L M
发明人： HJELMGREN HANS , JACOBSON LARS-PETER , SJODIN HAKAN , EKLUND ANDERS
IPC分类号： G01R31/26 , G01R31/28 , G06F30/367 , H01L21/331 , H01L21/66 , H01L29/00 , H01L29/73 , G06F19/00 , G06F17/50
摘要： The present invention relates to an improved system for simulating bipolar transistors with a variation in Early voltage as a function of collector/emitter bias voltage. The simulation is based upon a standard GummelPoon model and is improved by an Early voltage extension, where the constant Early voltage is replaced by an Early voltage that is divided into several regions. The Early voltage is adjusted to fit the actual variations of the measured Early voltage characteristics of a bipolar transistor. The Early voltage within each region is used for calculating the bipolar transistors base charge (qb) which then is used to simulate the performance of the bipolar transistor. The regions may be linked together by choice of boundary conditions.

8. 发明专利

SE9704465D0 未知
公开(公告)号：SE9704465D0
公开(公告)日：1997-12-01
申请号：SE9704465
申请日：1997-12-01
申请人： ERICSSON TELEFON AB L M
发明人： HJELMGREN HANS , JACOBSON LARS-PETER , SJOEDIN HAAKAN
IPC分类号： G01R31/28 , G01R31/26 , G06F30/367 , H01L21/331 , H01L21/66 , H01L29/00 , H01L29/73 , G06F
摘要： An improved system for simulating bipolar transistors with a variation in Early voltage as a function of collector/emitter bias voltage is disclosed. The simulation is based upon a standard Gummel-Poon model and is improved by an Early voltage extension, where the constant Early voltage is replaced by an Early voltage that is divided into several regions. The Early voltage is adjusted to fit the actual variations of the measured Early voltage characteristics of a bipolar transistor. The Early voltage within each region is used for calculating the bipolar transistors base charge which then is used to simulate the performance of the bipolar transistor. The regions may be linked together by choice of boundary conditions.

9. 发明专利

ES2914249T3 Réplica de tensión de subestación basada en la tensión digital 未知
公开(公告)号：ES2914249T3
公开(公告)日：2022-06-08
申请号：ES17305195
申请日：2017-02-23
申请人： SCHNEIDER ELECTRIC IND SAS
发明人： RUDOLPH THOMAS
IPC分类号： G01R31/327 , G06F30/367 , H02J13/00
摘要： Un procedimiento implementado por ordenador para determinar una réplica de la tensión digital de una subestación, estando la subestación representada como un diagrama unilineal que tiene componentes del aparato de conmutación, estando cada componente del aparato de conmutación asociado a un nodo lógico, comprendiendo el procedimiento: obtener una topología de subestación (101); identificar y numerar los nodos de conectividad de la topología, siendo cada nodo de conectividad un punto del diagrama unilineal que representa un potencial común; generar un modelo de nodos (102) a partir de la topología, el modelo representando cada componente del aparato de conmutación por un par de dos nodos de conectividad, el modelo comprendiendo cadenas combinadas de pares consecutivos de nodos de conectividad; obtener los datos de estado del aparato de conmutación (103); animar el modelo de nodos (104) asignando, para cada aparato de conmutación, los datos de estado de los aparatos de conmutación obtenidos al respectivo par de nodos de conectividad (N0 - N12); determinar un nodo de tensión de referencia para un nodo de conectividad objetivo (105) mediante una búsqueda de ruta desde el nodo de conectividad objetivo hasta un transformador de tensión de referencia.

10. 发明专利

DE112019004350T5 ENTWICKLUNGS-UNTERSTÜTZUNGSVORRICHTUNG, ENDGERÄTEVORRICHTUNG,ENTWICKLUNGS-UNTERSTÜTZUNGSVERFAHREN UND COMPUTERPROGRAMM 未知
公开(公告)号：DE112019004350T5
公开(公告)日：2021-06-02
申请号：DE112019004350
申请日：2019-08-27
申请人： GS YUASA INT LTD
发明人： OKABE YOSUKE , YAMATE SHIGEKI
IPC分类号： G06F30/367
摘要： Es sind eine Entwicklungs-Unterstützungsvorrichtung, eine Endgerätevorrichtung, ein Entwicklungs-Unterstützungsverfahren und ein Computerprogramm angegeben. Es sind eine Empfangseinheit, die nach Benutzerauthentifizierung der Endgerätevorrichtung eine Simulationsbedingung einer Stromspeichervorrichtung von einer Endgerätevorrichtung empfängt, eine Simulations-Ausführungseinheit, die das Verhalten der Stromspeichervorrichtung basierend auf der empfangenen Simulationsbedingung simuliert, und eine Sendeeinheit, die ein Simulationsergebnis der Simulations-Ausführungseinheit zu der Endgerätevorrichtung sendet, enthalten.

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