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81. 发明专利

JP2010039142A Resist pattern forming method 有权
标题翻译：电阻图案形成方法
公开(公告)号：JP2010039142A
公开(公告)日：2010-02-18
申请号：JP2008201280
申请日：2008-08-04
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , NAKAMURA TAKESHI , MORI YOSHITAKA , FURUYA SANAE , SHIONO HIROHISA , HIRANO TOMOYUKI , DAZAI NAOHIRO
IPC分类号： G03F7/039 , C08F220/18 , C08F220/28 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To form a resist pattern having an excellent shape. SOLUTION: A resist pattern forming method includes steps of: forming a resist film on a support by using a positive resist composition; exposing the resist film, performing post-exposure bake of the resist film at ≤80°C; and alkali-developing the resist film to form a resist pattern. The positive resist composition contains a base component (A) of which the solubility in an alkali developer increases under the action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the proportion of constitutional units having an acid-dissociable dissolution inhibiting group to all constitutional units constituting the base component (A) is 55-80 mol%. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：形成具有优异形状的抗蚀剂图案。解决方案：抗蚀剂图案形成方法包括以下步骤：通过使用正性抗蚀剂组合物在支撑体上形成抗蚀剂膜; 曝光抗蚀剂膜，在≤80℃下对抗蚀剂膜进行曝光后烘烤; 并对抗蚀剂膜进行碱显影以形成抗蚀剂图案。正型抗蚀剂组合物含有碱性成分（A），其在碱性显影剂中的溶解度在酸的作用下增加，以及在曝光时产生酸的酸产生剂组分（B），其中具有构成基础组分（A）的所有结构单元的酸解离溶解抑制基团为55-80摩尔％。版权所有（C）2010，JPO＆INPIT

82. 发明专利

JP2009276607A Positive resist composition, resist pattern forming method, and high molecular compound 有权
标题翻译：积极抗性组合物，抗性图案形成方法和高分子化合物
公开(公告)号：JP2009276607A
公开(公告)日：2009-11-26
申请号：JP2008128351
申请日：2008-05-15
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , NAKAMURA TAKESHI , HIRANO TOMOYUKI , DAZAI NAOHIRO
IPC分类号： G03F7/039 , C08F222/10 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a new high molecular compound, a positive resist composition containing the high molecular compound, and a resist pattern forming method using the positive resist composition. SOLUTION: The positive resist composition contains a base material component (A) for increasing solubility for an alkali developer due to acid action, and an acid generator component (B) for generating acid due to light exposure, and contains the high molecular compound (A1) having a constituent unit (a01) expressing the base material component (A) in formula (a0-1) and a constituent unit (a03) expressed in formula (a0-3). COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供新的高分子化合物，含有高分子化合物的正性抗蚀剂组合物和使用正性抗蚀剂组合物的抗蚀剂图案形成方法。解决方案：正型抗蚀剂组合物包含用于增加由于酸作用而导致的碱性显影剂的溶解度的基材成分（A）和由于曝光产生酸的酸产生剂组分（B），并且含有高分子量具有表示式（a0-1）中的基材成分（A）的构成单元（a01）和式（a0-3）表示的构成单元（a03）的化合物（A1）。版权所有（C）2010，JPO＆INPIT

83. 发明专利

JP2009265332A Positive resist composition, resist pattern forming method, and polymer compound 有权
标题翻译：阳离子组合物，电阻图案形成方法和聚合物化合物
公开(公告)号：JP2009265332A
公开(公告)日：2009-11-12
申请号：JP2008114190
申请日：2008-04-24
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , NAKAMURA TAKESHI , MORI YOSHITAKA , FURUYA SANAE , SHIONO HIROHISA , HIRANO TOMOYUKI , DAZAI NAOHIRO
IPC分类号： G03F7/039 , C08F220/26 , G03F7/004 , H01L21/027
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , G03F7/0045 , G03F7/0046 , G03F7/2041 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To provide: a novel polymer compound; a positive resist composition containing the polymer compound; and a resist pattern forming method using the positive resist composition. SOLUTION: The positive resist composition contains a base material component (A) of increasing solubility in an alkali developing liquid by an action of an acid, and an acid-generator component (B). The base material component (A) contains a polymer compound (A1) having a constitutive unit expressed by general formula (a0-1) and a constitutive unit expressed by general formula (a0-2), wherein: in the general formula (a0-1), R 1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group, R 8 represents a divalent bonding group, and R 7 represents an acid-dissociable dissolution inhibiting group; and in the general formula (a0-2), R 3 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group, R 4 represents a ≥3C or more branched alkyl group, R 5 and R 6 each independently represents an alkyl group, and R 5 is bonded to R 6 to form a cyclic group. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供：新型高分子化合物; 含有高分子化合物的正性抗蚀剂组合物; 以及使用正型抗蚀剂组合物的抗蚀剂图案形成方法。解决方案：正型抗蚀剂组合物含有通过酸作用在碱性显影液中增加溶解度的基材成分（A）和酸发生剂成分（B）。基材成分（A）含有具有由通式（a0-1）表示的构成单元的高分子化合物（A1）和由通式（a0-2）表示的构成单元，其中：在通式（a0- 1）中，R 1表示氢原子，低级烷基或卤代低级烷基，R SP 8表示二价键合基，R / SP>表示酸解离溶解抑制基团; 在通式（a0-2）中，R“3”表示氢原子，低级烷基或卤代低级烷基，R“4”表示≥3C或更多的支链烷基，R“SP”5和R“SP”6各自独立地表示烷基，并且R 5和R 6连接在R 6上， / SP>以形成环状基团。版权所有（C）2010，JPO＆INPIT

84. 发明专利

JP2009109963A Resist composition and resist pattern forming method 有权
标题翻译：电阻组合和电阻形成方法
公开(公告)号：JP2009109963A
公开(公告)日：2009-05-21
申请号：JP2007318942
申请日：2007-12-10
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： NAKAMURA TAKESHI , SHIMIZU HIROAKI
IPC分类号： G03F7/004 , C08F220/10 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition that can form a resist pattern of excellent shape, and a resist pattern forming method.
SOLUTION: The resist composition includes a base component A which exhibits changed solubility in an alkali developing solution under the action of acid, an acid-generator component B which generates acid upon exposure, and a nitrogen-containing organic compound D1 having a molecular weight of 200 or more, which is represented by a formula d1, wherein each of R
1 to R
3 independently represents a hydrocarbon group which may have a substituent, at least one of R
1 to R
3 is a polar group-containing hydrocarbon group, at least one of R
1 to R
3 is a hydrophobic group, and two of R
1 to R
3 may be bonded to each other to form a ring with a nitrogen atom in the formula.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够形成优异形状的抗蚀剂图案的抗蚀剂组合物和抗蚀剂图案形成方法。解决方案：抗蚀剂组合物包括在酸的作用下在碱性显影溶液中显示出改变的溶解度的基础组分A，暴露时产生酸的酸产生剂组分B和含有有机化合物D1的含氮有机化合物D1 分子量为200以上，其由式d1表示，其中R 1至R 3中的每一个独立地表示可以具有取代基的烃基，至少 R 1 之一至R 3 之一是含极性基团的烃基，R SP 1至R 3中的至少一个< / SP>是疏水性基团，并且R 1和R 3中的两个可以彼此键合，以形成式中具有氮原子的环。版权所有（C）2009，JPO＆INPIT

85. 发明专利

JP2009098213A Resist composition and resist pattern forming method 审中-公开
标题翻译：电阻组合和电阻形成方法
公开(公告)号：JP2009098213A
公开(公告)日：2009-05-07
申请号：JP2007267029
申请日：2007-10-12
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , NAKAMURA TAKESHI
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition and a resist pattern forming method for forming a resist pattern having a satisfactory shape.
SOLUTION: This resist composition contains: a base material component (A) changing its solubility in an alkaline developing liquid by the action of acid; an acid generator component (B) generating acid by exposure to light; amine (D1) expressed by a formula (d1) (wherein, R
1 -R
3 denote hydrocarbon groups which may have substitutional groups independently from each other, at least one of R
1 -R
3 is a hydrocarbon group containing a polar group, and at least one of R
1 -R
3 is a hydrophobic group, but any two of R
1 -R
3 may be mutually bonded and may form a ring together with the nitrogen atom in the formula) and having a molecular weight of 200 or more; and amine (D2) other than the amine (D1).
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成具有令人满意的形状的抗蚀剂图案的抗蚀剂组合物和抗蚀剂图案形成方法。该抗蚀剂组合物含有：通过酸作用改变其在碱性显影液中的溶解度的基材成分（A）通过曝光产生酸的酸发生剂组分（B）; 由式（d1）表示的胺（D1）（其中，R 0表示可以具有彼此独立地具有取代基的烃基，至少一个 R 1 -R 3 是含有极性基团的烃基，R 1〜 SP>是疏水基团，但是任选的R 1 SP 3 -R 3可以相互键合，并且可以与式中的氮原子一起形成环，并具有式分子量为200以上; 和胺（D1）以外的胺（D2）。版权所有（C）2009，JPO＆INPIT

86. 发明专利

JP2008203737A Positive resist composition and resist pattern forming method 审中-公开
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：JP2008203737A
公开(公告)日：2008-09-04
申请号：JP2007042259
申请日：2007-02-22
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , OSHITA KYOKO
IPC分类号： G03F7/039 , C08F20/10 , G03F7/004 , G03F7/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition used in ArF excimer laser lithography, etc., and suitable for thermal flow and a resist pattern forming method. SOLUTION: The positive resist composition comprises a resin component (A) of which the solubility in an alkali developer is increased by the action of an acid and an acid generator component (B) which generates an acid upon exposure, wherein the resin component (A) has a hydroxynaphthalene (meth) acrylate constitutional unit (a0) and the positive resist composition further comprises a crosslinkable polyvinyl ether compound (G). COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供用于ArF准分子激光光刻等的适合于热流动和抗蚀剂图案形成方法的正性抗蚀剂组合物。解决方案：正型抗蚀剂组合物包括其中通过在暴露时产生酸的酸和酸产生剂组分（B）的作用使在碱性显影剂中的溶解度增加的树脂组分（A），其中树脂组分（A）具有羟基萘（甲基）丙烯酸酯结构单元（a0），正性抗蚀剂组合物还包含可交联的聚乙烯醚化合物（G）。版权所有（C）2008，JPO＆INPIT

87. 发明专利

JP2008134607A Positive resist composition and method for formation of resist pattern 有权
标题翻译：积极抗性组合物及其形成方法
公开(公告)号：JP2008134607A
公开(公告)日：2008-06-12
申请号：JP2007235764
申请日：2007-09-11
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： UCHIUMI YOSHIYUKI , SHIMIZU HIROAKI , YOSHII YASUHIRO
IPC分类号： G03F7/039 , C08F20/22 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition and a method for formation of a resist pattern using the positive resist composition. SOLUTION: The positive resist composition comprises a resin component (A) whose alkali solubility can be increased by the action of an acid and an acid generator component (B) which can generate an acid upon being exposed to light, wherein the resin component (A) comprises a polymer (A2) having a constituent unit (a1) represented by general formula (II). COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供正性抗蚀剂组合物和使用正性抗蚀剂组合物形成抗蚀剂图案的方法。解决方案：正型抗蚀剂组合物包括其酸溶性和酸产生剂组分（B）的作用可以增加其碱溶性的树脂组分（A），其在暴露于光时可产生酸，其中树脂组分（A）包含具有由通式（II）表示的构成单元（a1）的聚合物（A2）。版权所有（C）2008，JPO＆INPIT

88. 发明专利

JP2008096743A Positive resist composition for liquid immersion lithography and resist pattern forming method 审中-公开
标题翻译：用于液体渗透成像和电阻图形形成方法的积极抵抗组合
公开(公告)号：JP2008096743A
公开(公告)日：2008-04-24
申请号：JP2006279146
申请日：2006-10-12
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： NAKAMURA TAKESHI , YOSHII YASUHIRO , SHIMIZU HIROAKI
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition for liquid immersion lithography capable of suppressing substance elution in liquid immersion lithography and having excellent lithography characteristics, and a resist pattern forming method. SOLUTION: The positive resist composition for liquid immersion lithography comprises a resin component (A) of which the alkali solubility increases under the action of an acid, an acid generator component (B) which generates an acid upon exposure to light and an acid propagator component (G). The resist pattern forming method includes the step of forming a resist film on a substrate using the positive resist composition for liquid immersion lithography; subjecting the resist film to liquid immersion lithography; and developing the resist film to form a resist pattern. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够抑制液浸光刻中物质洗脱并具有优异光刻特性的液浸光刻用正性抗蚀剂组合物和抗蚀剂图案形成方法。解决方案：用于液浸光刻的正型抗蚀剂组合物包括在酸的作用下碱溶解度增加的树脂组分（A），在曝光时产生酸的酸产生剂组分（B）和酸传播组分（G）。抗蚀剂图案形成方法包括使用用于液浸光刻的正性抗蚀剂组合物在基板上形成抗蚀剂膜的步骤; 对抗蚀剂膜进行液浸光刻; 并且使抗蚀剂膜显影以形成抗蚀剂图案。版权所有（C）2008，JPO＆INPIT

89. 发明专利

JP2008039917A Positive resist composition and resist pattern forming method 有权
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：JP2008039917A
公开(公告)日：2008-02-21
申请号：JP2006211028
申请日：2006-08-02
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition having good mask reproducibility and a resist pattern forming method. SOLUTION: The positive resist composition comprises a resin component (A) and an acid generator component (B), wherein the component (A) comprises a copolymer (A1) having a constitutional unit (a0) of formula (a0) (wherein R is H, halogen, a lower alkyl group or a lower haloalkyl group; Y 1 is an alicyclic group; Z is a group containing tertiary alkyl or an alkoxyalkyl group; (a) is an integer of 1 to 3, b is an integer of 0 to 2, a+b=1 to 3; and d and e are each independently an integer of 0 to 3) and a constitutional unit (a1) derived from an acrylic ester containing a tertiary alkyl ester type acid-dissociable dissolution inhibiting group, and a copolymer (A2) having a constitutional unit (a1') similar to the constitutional unit (a1) and the constitutional unit (a0) or a constitutional unit (a3) derived from an acrylic ester containing a polar group-containing aliphatic hydrocarbon group. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供具有良好的掩模再现性的正性抗蚀剂组合物和抗蚀剂图案形成方法。正型抗蚀剂组合物包含树脂组分（A）和酸产生剂组分（B），其中组分（A）包含具有式（a0）的结构单元（a0）的共聚物（A1）（其中R为H，卤素，低级烷基或低级卤代烷基; Y为脂环族基团; Z为含有叔烷基或烷氧基烷基的基团;（a）为 1〜3，b为0〜2的整数，a + b = 1〜3，d和e各自独立地为0〜3的整数）和来自含有叔碳原子的丙烯酸酯的结构单元（a1）烷基酯型酸解离抑制基团，和具有与结构单元（a1）和结构单元（a0）相似的结构单元（a1'）的共聚物（A2）或衍生自丙烯酸酯的结构单元（a3）含有极性基团的脂族烃基的酯。版权所有（C）2008，JPO＆INPIT

90. 发明专利

JP2007155991A Positive resist composition and a method of forming a resist pattern 有权
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：JP2007155991A
公开(公告)日：2007-06-21
申请号：JP2005349233
申请日：2005-12-02
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： UCHIUMI YOSHIYUKI , UCHIDA RYUSUKE , SHIMIZU HIROAKI , OSHITA KYOKO
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain a resist pattern having a good profile reduced in line width roughness (LWR). SOLUTION: A positive resist composition contains a resin component (A) of which the alkali solubility is increased by the action of an acid and an acid generator component (B) capable of generating an acid upon exposure, wherein the resin component (A) contains a high molecular compound (A1) containing a constitutional unit (a1) derived from an acrylic ester containing an acid-dissociable dissolution inhibiting group comprising a ≥6C linear tertiary alkyl group, and a constitutional unit (a2) derived from an acrylic ester containing a lactone-containing cyclic group. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了获得线宽粗糙度（LWR）降低的轮廓良好的抗蚀剂图案。解决方案：正型抗蚀剂组合物含有通过酸和能够在暴露时产生酸的酸产生剂组分（B）的作用使碱溶解度增加的树脂组分（A），其中树脂组分（ A）含有含有由含有≥6C直链叔烷基的酸解离性溶解抑制基团的丙烯酸酯衍生的结构单元（a1）的高分子化合物（A1）和由丙烯酸酯衍生的结构单元（a2）含有含内酯的环状基团的酯。版权所有（C）2007，JPO＆INPIT

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