会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明公开
    • 부분적으로 셀프 얼라인 된 살리사이드 콘택 형성 방법
    • 形成部分自对准的杀鼠剂接触的方法
    • KR1020040008730A
    • 2004-01-31
    • KR1020020042404
    • 2002-07-19
    • 동부전자 주식회사
    • 김흥진
    • H01L21/28
    • PURPOSE: A method for forming a partial self-aligned salicide contact is provided to be capable of conserving leakage characteristic and improving contact resistance characteristic by selectively forming a silicide layer at a contact region alone. CONSTITUTION: A gate electrode(34) is formed at the upper portion of a silicon substrate(31). An LDD(Lightly Doped Drain) spacer(35) is formed at both sidewalls of the gate electrode. After forming a source/drain region(36) at both sides of the gate electrode in the silicon substrate, the first interlayer dielectric(37) is formed on the entire surface of the resultant structure. The first contact hole is formed at the first interlayer dielectric. After forming a metal layer at the upper portion of the resultant structure, the first annealing process is carried out at the resultant structure. After removing the metal layer, a salicide layer(38) is formed at the predetermined portion of the resultant structure by carrying out a second annealing process. Then, the second interlayer dielectric(39) is formed on the entire surface of the resultant structure.
    • 目的:提供一种用于形成部分自对准硅化物接触的方法,其能够通过在接触区域单独选择性地形成硅化物层来节省泄漏特性并提高接触电阻特性。 构成:在硅衬底(31)的上部形成栅电极(34)。 在栅电极的两个侧壁处形成LDD(轻掺杂漏极)间隔物(35)。 在硅衬底中的栅电极的两侧形成源/漏区(36)之后,在所得结构的整个表面上形成第一层间电介质(37)。 第一接触孔形成在第一层间电介质。 在所得结构的上部形成金属层之后,在所得结构下进行第一退火处理。 在除去金属层之后,通过进行第二退火处理,在所得结构的预定部分形成自对准硅化物层(38)。 然后,在所得结构的整个表面上形成第二层间电介质(39)。
    • 2. 发明授权
    • 부분적으로 셀프 얼라인 된 살리사이드 콘택 형성 방법
    • 부분적으로셀프얼라인된살리사이드콘택형성방
    • KR100459930B1
    • 2004-12-03
    • KR1020020042404
    • 2002-07-19
    • 동부전자 주식회사
    • 김흥진
    • H01L21/28
    • PURPOSE: A method for forming a partial self-aligned salicide contact is provided to be capable of conserving leakage characteristic and improving contact resistance characteristic by selectively forming a silicide layer at a contact region alone. CONSTITUTION: A gate electrode(34) is formed at the upper portion of a silicon substrate(31). An LDD(Lightly Doped Drain) spacer(35) is formed at both sidewalls of the gate electrode. After forming a source/drain region(36) at both sides of the gate electrode in the silicon substrate, the first interlayer dielectric(37) is formed on the entire surface of the resultant structure. The first contact hole is formed at the first interlayer dielectric. After forming a metal layer at the upper portion of the resultant structure, the first annealing process is carried out at the resultant structure. After removing the metal layer, a salicide layer(38) is formed at the predetermined portion of the resultant structure by carrying out a second annealing process. Then, the second interlayer dielectric(39) is formed on the entire surface of the resultant structure.
    • 目的:提供一种用于形成部分自对准硅化物接触的方法,其能够通过在接触区域单独选择性地形成硅化物层而节省漏电特性并改善接触电阻特性。 构成:栅电极(34)形成在硅衬底(31)的上部。 LDD(轻掺杂漏极)间隔物(35)形成在栅电极的两个侧壁上。 在硅衬底中的栅电极的两侧形成源/漏区(36)之后,在所得结构的整个表面上形成第一层间电介质(37)。 第一接触孔形成在第一层间电介质上。 在所得结构的上部形成金属层之后,在所得结构处进行第一退火处理。 去除金属层后,通过进行第二退火处理,在所得结构的预定部分形成硅化物层(38)。 接着,在所得结构的整个表面上形成第二层间电介质(39)。
    • 3. 发明公开
    • 인장재 해체 가능 정착장치 및 인장재 제거방법
    • 具有不可分离的张力会员和张力会员拆卸方法的安装
    • KR1020020042404A
    • 2002-06-05
    • KR1020010052383
    • 2001-08-29
    • 박병구
    • 박병구
    • E02D5/80
    • E02D5/765E21D21/0026
    • PURPOSE: An anchorage with a disjoinable tension member is provided to decrease manufacturing costs by reducing the number of components for an anchor, to shorten working hours and to heighten reliance on mechanical function of an anchor. CONSTITUTION: The anchorage with a disjoinable tension member(50) comprises: an elastic instrument for stopping the retreat of a three-section wedge; a cap coupled with the elastic instrument; a cylinder coupled with the cap and an anchor composed of a three-section wedge and interposed to a central through hole of the cylinder to bind a single-line tension member; a cast load-proof body(60) containing a tension member removal anchor(10) and a tension member(50); and a fastening ripple(20) and a socket(30) for connecting the cast load-proof body(60) for coupling the anchor and the cast load-proof body(60).
    • 目的:提供具有可分离的张力构件的锚固件,通过减少锚固件的数量来缩短制造成本,缩短工作时间并增加对锚的机械功能的依赖。 构成:具有可分离的张力构件(50)的锚​​固件包括:用于停止三段楔的后退的弹性工具; 一个与弹性乐器相结合的帽子; 与所述盖联接的圆筒和由三段楔形件构成的锚固件并且插入所述圆柱体的中心通孔以结合单线张力构件; 包含张力构件移除锚固件(10)和张力构件(50)的铸造负载体(60); 以及用于连接用于联接锚固件和防止铸造承载体(60)的铸造负载体(60)的紧固波纹(20)和插座(30)。