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1. 发明公开

KR1020020042405A 촬상 장치 탑재 휴대 전화기 无效
标题翻译：便携式电话机与图像拾取器件配合使用
公开(公告)号：KR1020020042405A
公开(公告)日：2002-06-05
申请号：KR1020010053999
申请日：2001-09-04
申请人： 미쓰비시덴키 가부시키가이샤
发明人： 미야께히로유끼 , 고모리노리유끼
IPC分类号： H04B1/38
CPC分类号： H05K1/182 , H04N5/2252 , H04N5/2253 , H04N7/142 , H04N2007/145
摘要： PURPOSE: To provide a portable telephone set incorporated with image pickup device, which has novel configuration capable of being miniaturized/thinned while incorporating an image pickup device without making an image pickup device mounting portion into irregular outer shape design. CONSTITUTION: This portable telephone set incorporated with image pickup device is provided with a case 3 for portable telephone set, a circuit board 2 for portable telephone set housed inside the case 3 and having an opening part 201, an image pickup device 1 having a lens 103 for imaging a chromatic video from the outside and an imaging device 101 for converting the light of the image formed by that lens to an electric signal, and lead part 104, which is electrically connected to the image pickup device 1, for electrically connecting the circuit board 2 and the image pickup device 1 by inserting the image pickup device 1 to the opening part 201 of the circuit board 2.
摘要翻译：目的：提供一种结合有图像拾取装置的便携式电话机，其具有能够在并入图像拾取装置的同时将图像拾取装置安装部分形成为不规则外形设计的小型化/薄型化的新型结构。构成：与摄像装置结合的这种便携式电话机具有便携式电话机壳体3，容纳在壳体3内部并具有开口部分201的便携式电话机用电路板2，具有透镜的图像拾取装置1 用于将来自外部的彩色视频成像的成像装置101和用于将由该透镜形成的图像的光转换为电信号的成像装置101以及与图像拾取装置1电连接的引线部104，电路板2和图像拾取装置1，通过将图像拾取装置1插入电路板2的开口部201。

2. 发明授权

KR100439191B1 살리사이드 콘택 형성 방법 失效
标题翻译： 살리사이드콘택형성방법
公开(公告)号：KR100439191B1
公开(公告)日：2004-07-07
申请号：KR1020020042405
申请日：2002-07-19
申请人： 동부전자 주식회사
发明人： 김흥진
IPC分类号： H01L21/28
摘要： PURPOSE: A method for forming a salicide contact is provided to be capable of conserving predetermined leakage characteristic and considerably improving contact resistance by forming a salicide layer at a contact region alone. CONSTITUTION: After forming an isolation layer(32) and a well at a semiconductor substrate(31), a gate(34) is formed at the upper portion of the resultant structure. A gate spacer(35) is formed at both sidewalls of the gate. A source/drain region(36) is formed at both sides of the gate in the semiconductor substrate. After forming the first interlayer dielectric(37) on the entire surface of the resultant structure, the first contact hole is formed at the first interlayer dielectric by carrying out an etching process at a salicide layer forming region. After forming a contact hole spacer(38) made of an insulating layer at both sidewalls of the first contact hole, a metal layer is formed at the upper portion of the resultant structure. Then, the first annealing process is carried out at the resultant structure. A salicide layer(39) is formed at the lower portion of the first contact hole by carrying out the second annealing process.
摘要翻译：目的：提供一种用于形成自对准硅化物触点的方法，其能够通过仅在接触区域处形成自对准硅化物层而能够保持预定的泄漏特性并显着改善接触电阻。构成：在半导体衬底（31）上形成隔离层（32）和阱之后，在所得结构的上部形成栅极（34）。栅极间隔物（35）形成在栅极的两个侧壁处。源/漏区（36）形成在半导体衬底中的栅极的两侧。在所得结构的整个表面上形成第一层间电介质（37）之后，通过在硅化物层形成区域执行蚀刻工艺，在第一层间电介质处形成第一接触孔。在第一接触孔的两个侧壁上形成由绝缘层制成的接触孔隔离物（38）后，在所得结构的上部形成金属层。然后，在所得到的结构上进行第一退火处理。通过实施第二退火处理，在第一接触孔的下部形成硅化物层（39）。

3. 发明公开

KR1020040008731A 살리사이드 콘택 형성 방법 失效
标题翻译：形成杀菌剂接触的方法
公开(公告)号：KR1020040008731A
公开(公告)日：2004-01-31
申请号：KR1020020042405
申请日：2002-07-19
申请人： 동부전자 주식회사
发明人： 김흥진
IPC分类号： H01L21/28
摘要： PURPOSE: A method for forming a salicide contact is provided to be capable of conserving predetermined leakage characteristic and considerably improving contact resistance by forming a salicide layer at a contact region alone. CONSTITUTION: After forming an isolation layer(32) and a well at a semiconductor substrate(31), a gate(34) is formed at the upper portion of the resultant structure. A gate spacer(35) is formed at both sidewalls of the gate. A source/drain region(36) is formed at both sides of the gate in the semiconductor substrate. After forming the first interlayer dielectric(37) on the entire surface of the resultant structure, the first contact hole is formed at the first interlayer dielectric by carrying out an etching process at a salicide layer forming region. After forming a contact hole spacer(38) made of an insulating layer at both sidewalls of the first contact hole, a metal layer is formed at the upper portion of the resultant structure. Then, the first annealing process is carried out at the resultant structure. A salicide layer(39) is formed at the lower portion of the first contact hole by carrying out the second annealing process.
摘要翻译：目的：提供一种形成硅化物接触的方法，其能够通过在接触区域单独形成自对准硅化物层来节约预定的泄漏特性并显着改善接触电阻。构成：在半导体衬底（31）上形成隔离层（32）和阱之后，在所得结构的上部形成栅极（34）。栅极间隔件（35）形成在栅极的两个侧壁处。源极/漏极区域（36）形成在半导体衬底中的栅极的两侧。在所得结构的整个表面上形成第一层间电介质（37）之后，通过在自对准硅化物层形成区域进行蚀刻工艺，在第一层间电介质形成第一接触孔。在形成在第一接触孔的两个侧壁处由绝缘层制成的接触孔间隔物（38）之后，在所得结构的上部形成金属层。然后，在所得到的结构下进行第一退火处理。通过进行第二退火处理，在第一接触孔的下部形成自对准层（39）。

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