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1. 发明授权

US11298420B2 Armed oncolytic viruses 有权
公开(公告)号：US11298420B2
公开(公告)日：2022-04-12
申请号：US15843603
申请日：2017-12-15
申请人： Memgen, LLC
发明人： Mark J. Cantwell
IPC分类号： A61K39/42 , A61K38/17 , C07K14/705 , A61P35/00 , A61K39/00
摘要： Disclosed are oncolytic viruses comprising chimeric human/mouse CD40 ligands. The chimeric human/mouse CD40 ligand may be MEM40. The oncolytic virus may be replication competent. The oncolytic virus may be an oncolytic herpes simplex virus. Also disclosed are methods comprising administering an oncolytic virus armed with at least one chimeric human/mouse CD40 ligand, for example MEM40, to a patient suffering from cancer.

2. 发明授权

US11238980B2 Systems and methods to automate transfer, storage, and analysis of medical device data 有权
公开(公告)号：US11238980B2
公开(公告)日：2022-02-01
申请号：US15934025
申请日：2018-03-23
申请人： Galen Data, Inc.
发明人： Abbasi N. Dhilawala , Christopher G. Dupont
IPC分类号： G16H40/60 , G16H10/60 , G16H40/20 , G16H80/00 , G16H30/00 , G16H15/00
摘要： Systems and methods for automated generation of medical device communication software, cloud-based storage of medical device data including an electronic medical device (EMD) application communication interface and a central communication interface, and user interface software to allow a user device to receive EMD data transmitted from a data storage medium (DSM) and transmit data to the DSM for transmission to the EMD, that meets one or more medical device standards set by government or industry regulatory bodies.

3. 发明授权

US11114736B2 Multi-channel power combiner with phase adjustment 有权
公开(公告)号：US11114736B2
公开(公告)日：2021-09-07
申请号：US16835303
申请日：2020-03-31
申请人： GLOBALFOUNDRIES INC.
发明人： See Taur Lee , Sher Jiung Fang , Abdellatif Bellaouar
IPC分类号： H03K5/01 , H01P5/12 , H03K17/687 , H03F3/24 , H01P11/00 , H03K5/00
摘要： Power combiners having increased output power, such as may be useful in millimeter-wave devices. The power combiner comprise at least two channels, wherein each channel comprises a phase alignment circuit, wherein the phase alignment circuit comprises a first differential input subcircuit comprising a first inverter and a second inverter, and a second differential input subcircuit comprising a third inverter and a fourth inverter, wherein the first inverter, the second inverter, the third inverter, and the fourth inverter each comprise a PMOS transistor and an NMOS transistor each having an adjustable back gate bias voltage. By adjusting the back gate bias voltage, the phases of the signal through each channel may be aligned, which may increase the output power of the power combiner. Methods of increasing output power of such power combiners. Systems for manufacturing devices comprising such power combiners.

4. 外观设计

USD927946S1 Rotating coffee rack 有权
公开(公告)号：USD927946S1
公开(公告)日：2021-08-17
申请号：US29705512
申请日：2019-09-12
申请人： Jiangmen Xinhui Yinghua Hardware Co., Ltd.
设计人： Chi Leong Lam

5. 发明授权

US10924058B2 Local oscillator distribution for a millimeter wave semiconductor device 有权
公开(公告)号：US10924058B2
公开(公告)日：2021-02-16
申请号：US16801667
申请日：2020-02-26
申请人： GLOBALFOUNDRIES INC.
发明人： Abdellatif Bellaouar , Arul Balasubramaniyan
IPC分类号： H03B1/02 , H01P5/16 , H03H11/36 , H03B5/12 , G06F1/10 , H04B1/38 , H04B1/525 , H01P5/12
摘要： A CMOS gain element is disclosed herein. Also disclosed herein are splitters, comprising the CMOS gain element, and local oscillator distribution circuitry comprising the splitters and the CMOS gain elements. Semiconductor devices comprising the local oscillator distribution circuitry may have smaller footprints and reduced power consumption relative to prior art devices.

6. 外观设计

USD898413S1 Mattress cover 有权
公开(公告)号：USD898413S1
公开(公告)日：2020-10-13
申请号：US29677798
申请日：2019-01-23
申请人： Sinomax USA Inc.
设计人： Josh Micklos , Michael Carter , Yee Mei Mok
摘要： FIG. 1 is a left elevation view of the mattress cover in a first embodiment, of which the right elevation view is a mirror image;
FIG. 2 is a rear elevation view of the mattress cover in the first embodiment, of which the front elevation view is a mirror image;
FIG. 3 is a left elevation view of the mattress cover in alternative embodiment of the first embodiment, of which the right elevation view is a mirror image;
FIG. 4 is a rear elevation view of the mattress cover in the alternative embodiment of the first embodiment, of which the front elevation view is a mirror image;
FIG. 5 is a left elevation view of the mattress cover in a further alternative embodiment of the first embodiment, of which the right elevation view is a mirror image; and,
FIG. 6 is a rear elevation view of the mattress cover in the further alternative embodiment of the first embodiment, of which the front elevation view is a mirror image.
Portions drawn in broken lines represent parts of the mattress cover that form no part of the claimed design.

7. 发明授权

US10749473B2 Methods, apparatus, and system for a frequency doubler for a millimeter wave device 有权
公开(公告)号：US10749473B2
公开(公告)日：2020-08-18
申请号：US15966747
申请日：2018-04-30
申请人： GLOBALFOUNDRIES INC.
发明人： Abdellatif Bellaouar , Arul Balasubramaniyan
IPC分类号： H03B19/00 , H03B19/06 , H03B19/10 , H03B19/14 , H03K5/00
摘要： An apparatus for performing a frequency multiplication of an mm-wave wave signal is provided. The apparatus includes a first differential circuit that is capable of receiving a 0° phase component of an input signal and a 180° phase component of the input signal having a first frequency. The first differential circuit provides a first output signal that is twice the frequency and is in −phase(0°) based on the 0° the 180° phase components of the input signal. The apparatus also includes a second differential circuit that is capable of receiving a 90° phase component of the input signal and a 270° phase component of the input signal, and provide a first output signal that is twice the frequency and out of phase(180°). The apparatus also includes a differential transformer that is configured to receive the first output signal and the second output signal. The differential transformer is configured to provide a differential output signal that has a second frequency that is twice the first frequency.

8. 发明授权

US10707303B1 Method, apparatus, and system for improving scaling of isolation structures for gate, source, and/or drain contacts 有权
公开(公告)号：US10707303B1
公开(公告)日：2020-07-07
申请号：US16264273
申请日：2019-01-31
申请人： GLOBALFOUNDRIES INC.
发明人： Haiting Wang , Hui Zang , Zhenyu Owen Hu
IPC分类号： H01L29/66 , H01L29/06 , H01L29/08 , H01L21/762
摘要： A semiconductor device, comprising a semiconductor substrate; an isolation layer disposed on the semiconductor substrate; a first active region and a second active region disposed at least partially above the isolation layer; a first gate structure and a second gate structure disposed on the isolation layer, the first active region, and the second active region; and an isolation pillar disposed on the isolation layer, between the first and second active regions, and between and in contact with the first and second gate structures, wherein the isolation pillar has an inverted-T shape. A method for making the semiconductor device. A system configured to implement the method and manufacture the semiconductor device.

9. 发明授权

US10685881B2 Methods, apparatus, and manufacturing system for self-aligned patterning of contacts in a semiconductor device 有权
公开(公告)号：US10685881B2
公开(公告)日：2020-06-16
申请号：US16112511
申请日：2018-08-24
申请人： GLOBALFOUNDRIES INC.
发明人： Hui Zang , Guowei Xu , Haiting Wang
IPC分类号： H01L21/70 , H01L21/768 , H01L29/78 , H01L29/06 , H01L29/49 , H01L23/535 , H01L23/532 , H01L29/66
摘要： A method, apparatus, and manufacturing system are disclosed for a fin field effect transistor having a reduced risk of short circuits between a gate and a source/drain contact. In one embodiment, we disclose a semiconductor device including a fin structure comprising a fin body, source/drain regions, and a metal formation disposed above the source/drain regions, wherein the metal formation has a first height; and a gate structure between the source/drain regions, wherein each gate structure comprises spacers in contact with the metal formation, wherein the spacers have a second height less than the first height, a metal plug between the spacers and below the second height, and a T-shaped cap above the metal plug and having the first height.

10. 发明授权

US10594356B1 Methods, apparatus, and system for high-bandwidth on-mold antennas 有权
公开(公告)号：US10594356B1
公开(公告)日：2020-03-17
申请号：US16526778
申请日：2019-07-30
申请人： GLOBALFOUNDRIES INC.
发明人： Saquib Bin Halim , Md Sayed Kaysar Bin Rahim , Marcel Wieland
IPC分类号： H04B1/38 , H04B1/40 , H01L23/66 , H01L21/56 , H01L23/48 , H01L23/31 , H01L23/552 , H01L21/768
摘要： A semiconductor device comprising an on-mold antenna for transmitting and/or receiving a millimeter-wave radio frequency signal is provided. The semiconductor device includes a semiconductor layer; a polymer layer proximal to the semiconductor layer; a mold proximal to the polymer layer; a plurality of nodes proximal to the semiconductor layer and distal to the polymer layer; an antenna disposed on the mold; and a conductive element providing electrical communication between the antenna and a first node. The mold may be from 500 μm to 1000 μm thick, such as from 750 μm to 800 μm thick, such as about 775 μm.

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