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    • 98. 发明申请
    • SILICON CARBIDE SEMICONDUCTOR DEVICE
    • US20220359666A1
    • 2022-11-10
    • US17753612
    • 2020-11-04
    • SUMITOMO ELECTRIC INDUSTRIES, LTD.
    • Yu SAITOH
    • H01L29/16H01L29/423H01L29/78H01L29/45
    • A silicon carbide semiconductor device includes a silicon carbide substrate having a first principal surface and a second principal surface opposite to the first principal surface. The silicon carbide substrate includes a drift region, a body region, and a source region. A gate trench is provided on the first principal surface, the gate trench being defined by: a side surface, which passes through the source region and the body region and reaches the drift region; and a bottom surface coupled to the side surface. The silicon carbide substrate further includes a first reduced-electric field region provided between the bottom surface and the second principal surface and having a second conductive type. The source region includes a first region contacting the side surface, the first region having a first thickness. The source region includes a second region having a second thickness greater than the first thickness, the first region being interposed between the side surface and the second region. The silicon carbide semiconductor device further includes a contact electrode with an ohmic junction with the second region.