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91. 发明申请

US20230020521A1 MEMORY CONTROLLER, OPERATING METHOD THEREOF, AND COMPUTING SYSTEM INCLUDING THE SAME 有权
公开(公告)号：US20230020521A1
公开(公告)日：2023-01-19
申请号：US17659161
申请日：2022-04-13
申请人： SK hynix Inc.
发明人： Sung Jin PARK
IPC分类号： G06F11/10 , G06F12/02
摘要： A memory controller includes: a map data storage for storing map data; and a read operation controller for receiving, from a host, a read request and a target logical address corresponding to the read request, acquiring a first physical address mapped to the target logical address, based on the map data, and obtaining data stored at the first physical address. When an uncorrectable error is present in the data stored at the first physical address, the read operation controller acquires a second physical address previously mapped to the target logical address before the first physical address, obtains data stored at the second physical address, and provides the host with the data stored at the second physical address and information representing occurrence of the uncorrectable error.

92. 发明申请

US20230019730A1 POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND MANUFACTURING METHOD FOR POLISHED ARTICLE 有权
公开(公告)号：US20230019730A1
公开(公告)日：2023-01-19
申请号：US17859301
申请日：2022-07-07
申请人： SKC solmics Co., Ltd. , SK HYNIX INC.
发明人： SEUNG CHUL HONG , DEOK SU HAN , JIN HYUK LIM , DONGHYUN KIM , JIEUN LEE
IPC分类号： C09G1/02 , H01L21/768 , H01L21/321
摘要： Embodiments provide a polishing composition for a semiconductor process facilitating the formation of a microcircuit pattern and minimizing the generation of defects and scratches and a method of preparing a polished article using the same.
Embodiments provide a polishing composition for a semiconductor process, in which the absorbance ratio of a group having a specific size of particle diameter compared to the overall average particle size (D50) is a predetermined ratio or less with respect to the absorbance of a group having a particle diameter more than 0.5 times and 2.5 times or less the overall average particle size.

93. 发明申请

US20230013450A1 MEMORY CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME 有权
公开(公告)号：US20230013450A1
公开(公告)日：2023-01-19
申请号：US17945230
申请日：2022-09-15
申请人： SK hynix Inc.
发明人： Chung Un NA
IPC分类号： G06F3/06
摘要： There are provided a memory controller and a storage device including the same. The memory controller includes: a command storage including a first read command queue and a second read command queue; a command generation controller configured to provide an erase command, a suspend command, a resume command, and output a scheduling event signal after the resume command is output; and a command schedule controller configured to: search for a first physical address group, reorder a output sequence of the first read command queue, and provide a command to perform the read command based on the second read command queue.

94. 发明授权

US11557617B2 Image sensing device including grid structures having different heights 有权
公开(公告)号：US11557617B2
公开(公告)日：2023-01-17
申请号：US16941049
申请日：2020-07-28
申请人： SK hynix Inc.
发明人： Min Su Cho
IPC分类号： H01L27/146
摘要： An image sensing device is disclosed. The image sensing device includes a pixel array including a plurality of unit pixels, each of which is configured to generate a pixel signal in response to incident light. The pixel array includes a substrate layer including a plurality of photoelectric conversion elements configured to convert the incident light into an electric signal, a plurality of microlenses formed over the substrate layer to respectively correspond to the photoelectric conversion elements, and configured to converge the incident light into the corresponding photoelectric conversion elements, a plurality of color filters disposed between the plurality of photoelectric conversion elements and the plurality of microlenses and configured to transmit light at predetermined wavelengths to corresponding photoelectric conversion elements, and one or more grid structures disposed over the substrate layer at intervals to separate the microlenses and the color filters from adjacent microlenses and the color filter. The grid structures have different heights at different locations in the pixel array such that one or more of the grid structure include a top portion protruding from a top surface of an abutting microlens.

95. 发明授权

US11557616B2 Image sensing device 有权
公开(公告)号：US11557616B2
公开(公告)日：2023-01-17
申请号：US16673747
申请日：2019-11-04
申请人： SK hynix Inc.
发明人： Ho Ryeong Lee , Dong Hyun Woo
IPC分类号： H01L27/14 , H01L27/146
摘要： An image sensing device includes a photoelectric conversion element, a floating diffusion (FD) region, and a transfer gate. The photoelectric conversion element is disposed in a substrate, and generates photocharges in response to incident light. The floating diffusion (FD) region is disposed over the photoelectric conversion element, and stores the photocharges generated by the photoelectric conversion element. The transfer gate transfer the photocharges generated by the photoelectric conversion element to the floating diffusion (FD) region in response to a transmission signal. The transfer gate includes a horizontal gate disposed over the photoelectric conversion element, and a vertical gate coupled to the horizontal gate. The vertical gate is positioned at a side of the photoelectric conversion element, and surrounds the photoelectric conversion element.

96. 发明授权

US11557571B2 Stack packages including passive devices 有权
公开(公告)号：US11557571B2
公开(公告)日：2023-01-17
申请号：US17154797
申请日：2021-01-21
申请人： SK hynix Inc.
发明人： Se Jin Park , Jang Hee Lee
IPC分类号： H01L25/065
摘要： A stack package includes a package substrate; a lower stack including lower dies stacked on the package substrate to form a zigzag shape in a vertical direction; an upper stack including upper dies that are sequentially offset stacked in an offset direction while providing a first upper side of a down staircase shape, a first end of an uppermost upper die among the upper dies protruding, in a horizontal direction, further than a first lower side of the lower stack; and a first passive device disposed on the package substrate and spaced apart from the first lower side, and disposed between a first portion of the package substrate and the first upper side.

97. 发明申请

US20230010725A1 IMAGE ACQUISITION METHOD FOR TIME OF FLIGHT CAMERA 有权
公开(公告)号：US20230010725A1
公开(公告)日：2023-01-12
申请号：US17540632
申请日：2021-12-02
申请人： SK hynix Inc. , Korea Advanced Institute of Science and Technology
发明人： Min Hyuk KIM , Daniel S. JEON
IPC分类号： G06T5/00 , G06T5/50 , G06T5/40 , G06T7/00 , H04N5/232 , G01S17/894
摘要： A method of reduce the impact of noise on a depth image produced using a Time Of Flight (TOF) camera uses an infrared image produced from one or more phase-specific images captured by the TOF camera to determine whether to move pixels in the depth image from one phase section to another.

98. 发明申请

US20230009221A1 SEMICONDUCTOR PACKAGES INCLUDING DIFFERENT TYPE SEMICONDUCTOR CHIPS HAVING EXPOSED TOP SURFACES AND METHODS OF MANUFACTURING THE SEMICONDUCTOR PACKAGES 有权
公开(公告)号：US20230009221A1
公开(公告)日：2023-01-12
申请号：US17523698
申请日：2021-11-10
申请人： SK hynix Inc.
发明人： Hyun Chul SEO
IPC分类号： H01L23/42 , H01L23/12 , H01L23/00 , H01L21/56
摘要： A method of manufacturing a semiconductor package includes mounting a first semiconductor chip and a second semiconductor chip on a substrate, forming a first film on a top surface of the first semiconductor chip, and loading the first semiconductor chip and the second semiconductor chip mounted on the substrate between a lower mold frame and an upper mold frame. The method further includes providing a molding material between the lower mold frame and the upper mold frame, removing the lower mold frame and the upper mold frame, and removing the first film on the top surface of the first semiconductor chip to expose the top surface of the first semiconductor chip.

99. 发明授权

US11551766B2 Memory device and operating method thereof 有权
公开(公告)号：US11551766B2
公开(公告)日：2023-01-10
申请号：US16950197
申请日：2020-11-17
申请人： SK hynix Inc.
发明人： Jang Seob Kim
IPC分类号： G11C16/28 , G11C16/08 , G11C16/30 , G11C16/10
摘要： A memory device includes: one or more planes each including a plurality of memory blocks; and a control circuit for selectively performing a dummy read operation before a valid read operation on the first memory block, according to whether a read command on the first memory block is firstly received from a host after a program operation is performed on a plane including the first memory block.

100. 发明授权

US11551744B2 Merged buffer and memory device including the merged buffer 有权
公开(公告)号：US11551744B2
公开(公告)日：2023-01-10
申请号：US17158767
申请日：2021-01-26
申请人： SK hynix Inc.
发明人： Chan Hui Jeong
IPC分类号： G11C11/4093 , G11C11/4099 , G11C5/06 , G11C11/4091 , G11C11/4094
摘要： A memory device according to the present technology includes a memory cell array configured to include planes having a plurality of memory cells, a page buffer connected to at least one memory cell among the memory cells through a bit line and configured to perform a sensing operation of reading data stored in the at least one memory cell connected to the bit line, a common reference voltage generator configured to generate a common reference voltage, a plurality of merged buffers configured to generate a reference signal using the common reference voltage, and control logic configured to control an operation of the common reference voltage generator and the merged buffers so that page buffer control signals generated based on the reference signal are supplied to the page buffer.

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