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91. 发明申请

US20210006726A1 IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS 有权
公开(公告)号：US20210006726A1
公开(公告)日：2021-01-07
申请号：US17025975
申请日：2020-09-18
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Kyohei YOSHIMURA , Toshifumi WAKANO , Yusuke OTAKE
IPC分类号： H04N5/232 , G02B7/34 , H01L27/14 , H01L27/146 , H04N5/369 , H04N9/04 , G02B7/36 , H01L27/30
摘要： The present disclosure relates to an image pickup device that enables inhibition of occurrence of color mixture or noise, and an electronic apparatus. The image pickup device of the present disclosure includes an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF. The image plane phase difference detection pixel includes: a first photoelectric conversion section that generates an electric charge in response to incident light; an upper electrode section that is one of electrodes disposed facing each other across the first photoelectric conversion section, the upper electrode section being formed on an incident side of the incident light on the first photoelectric conversion section; and a lower electrode section that is another of the electrodes disposed facing each other across the first photoelectric conversion section, the lower electrode section being formed on an opposite side of the incident side of the incident light on the first photoelectric conversion section, the lower electrode section being multiple-divided at a position that avoids a center of the incident light. The present disclosure is applicable to image sensors.

92. 发明授权

US10871598B2 Solid-state imaging device, production method, and electronic apparatus 有权
公开(公告)号：US10871598B2
公开(公告)日：2020-12-22
申请号：US16585867
申请日：2019-09-27
申请人： SONY CORPORATION
发明人： Hikaru Iwata
IPC分类号： G02B3/00 , H01L27/14 , H04N5/369 , H01L27/146
CPC分类号： G02B3/0075 , G02B3/0056 , G02B3/0068 , H01L27/14 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14645 , H01L27/14685 , H04N5/369
摘要： The present technology relates to a solid-state imaging device, a production method, and an electronic apparatus that can prevent sensitivity unevenness from generating. The solid-state imaging device includes a pixel array unit having a plurality of pixels, a microlens formed by laminating a plurality of lens layers for the every pixel, and a film formed between the lens layers with a uniform film thickness having a refractive index lower than a refractive index of the lens layer. The present technology is applicable to an amplification type solid-state imaging device such as a surface irradiation type or rear irradiation type CMOS image sensor, and a charge transfer type solid-state imaging device such as a CCD image sensor.

93. 发明授权

US10868075B2 Dual-device photosensitive detection unit based on composite dielectric gate, detector and method thereof 有权
公开(公告)号：US10868075B2
公开(公告)日：2020-12-15
申请号：US16320908
申请日：2016-10-20
申请人： NANJING UNIVERSITY
发明人： Haowen Ma , Feng Yan , Xiaofeng Bu , Chen Shen , Limin Zhang , Cheng Yang , Cheng Mao
IPC分类号： H01L27/14 , H01L27/146
CPC分类号： H01L27/14643 , H01L27/1461 , H01L27/1463 , H01L27/14614 , H01L27/14603 , H01L27/14621 , H01L27/14627
摘要： A photosensitive detection unit has a composite dielectric gate MOS-C portion and a composite dielectric gate MOSFET portion. The two portions are formed above a same P-type semiconductor substrate, and share a charge coupled layer. A plurality of the photosensitive detection units are arranged on a same P-type semiconductor substrate in form of an array to obtain a detector. Adjacent unit pixels in the detector are isolated by deep trench isolation regions and P+-type injection regions below the isolation regions. During the detection, the P-type semiconductor substrate in the composite dielectric gate MOS-C portion senses light and then couples photoelectrons to the charge coupled layer, and photoelectronic signals are read by the composite dielectric gate MOSFET portion.

94. 发明授权

US10829641B2 Coloring composition, film, color filter, pattern forming method, method for manufacturing color filter, solid image pickup element, and infrared sensor 有权
公开(公告)号：US10829641B2
公开(公告)日：2020-11-10
申请号：US15802828
申请日：2017-11-03
申请人： FUJIFILM Corporation
发明人： Masahiro Mori , Kazuya Oota , Kazuto Shimada , Kyohei Arayama , Takuya Tsuruta , Hirotaka Takishita
IPC分类号： G02B5/20 , G03F7/031 , C09B57/00 , G02B5/22 , C09B3/14 , H01L27/14 , C09B47/04 , C09B23/00 , G03F7/004 , C09B23/16 , G03F7/00 , G03F7/16 , G03F7/20 , G03F7/26
摘要： Provided is a coloring composition with which a film capable of allowing transmission of infrared light in a state where noise generated from visible light is small can be formed. In addition, also provided are a film, a color filter, a pattern forming method, a method for manufacturing a color filter, a solid image pickup element, and an infrared sensor in which the coloring composition is used. The coloring composition includes a coloring material that shields light in a visible range; and an infrared absorber. It is preferable that the coloring material that shields light in the visible range includes two or more chromatic colorants and that a combination of the two or more chromatic colorants forms black. Alternatively, it is preferable that the coloring material that shields light in the visible range includes an organic black colorant. It is preferable that the organic black colorant is at least one selected from the group consisting of a perylene compound and a bisbenzofuranone compound.

95. 发明授权

US10812673B2 Line sensor, image reading device, and image forming apparatus 有权
公开(公告)号：US10812673B2
公开(公告)日：2020-10-20
申请号：US16510462
申请日：2019-07-12
申请人： CANON KABUSHIKI KAISHA
发明人： Daisuke Akagi , Masanori Ogura , Jun Iba , Atsushi Furubayashi
IPC分类号： H04N1/46 , H04N1/028 , G02B5/20 , H01L27/14 , H04N9/07 , H04N1/03 , H04N1/191
摘要： In a line sensor including color filters that are periodically disposed in a light-receiving-element row, a problem called a “mixture of colors” occurs. A “mixture of colors” occurs when light that has been transmitted through a color filter differing from a color filter corresponding to a light receiving element is incident upon the light receiving element.In a CMOS sensor 107 including a light-receiving-element row in which a plurality of photodiodes 1204 are disposed side by side in a main scanning direction and a plurality of color filters 1202 that are disposed in correspondence with the plurality of photodiodes 1204, the center of each color filter 1202 is displaced in a direction of the center of the light-receiving-element row from the center of the photodiode 1204 corresponding to the color filter.

96. 发明授权

US10804312B2 Semiconductor device and electronic device having a chip size package (CSP) 有权
公开(公告)号：US10804312B2
公开(公告)日：2020-10-13
申请号：US16516785
申请日：2019-07-19
申请人： SONY CORPORATION
发明人： Masaya Nagata , Kaori Takimoto
IPC分类号： H01L27/14 , H01L23/28 , H01L23/29 , H01L23/31 , H01L25/065 , H01L25/07 , H01L25/18 , H01L21/56 , H01L27/146 , H01L23/00 , H01L25/11 , H01L25/04 , H01L25/075 , H01L23/48 , H01L21/768 , H01L21/78
摘要： The present disclosure relates to a semiconductor device, an electronic device, and a manufacturing method that can maintain the mounting reliability of an underfill. A chip is formed by a circuit 5 of an imaging element being produced on a Si substrate that is a first substrate and a second substrate being produced on an adhesive formed on the circuit. In this event, a photosensitive material is formed around the chip after the chip is mounted on a mounting substrate by a solder ball or in the state of the chip, then an underfill is formed, and then only the photosensitive 10 material is dissolved. The present disclosure can be applied to, for example, a CMOS solid-state imaging sensor used for an imaging device such as a camera.

97. 发明授权

US10797195B2 Ionizing radiation sensor based on float-zone silicon with p-type conductivity 有权
公开(公告)号：US10797195B2
公开(公告)日：2020-10-06
申请号：US16302679
申请日：2017-03-06
申请人： PUBLICHNOE AKTSIONERNOE OBSCHESTVO “INTERSOFT EVRAZIYA”
发明人： Vladimir Aleksandrovich Elin , Mikhail Moiseevich Merkin
IPC分类号： H01L27/14 , H01L31/117 , G01T1/24 , H01L31/0224 , H01L31/028 , H01L31/18
摘要： The invention relates to semiconductor devices for converting ionizing radiation into an electrical signal. The present ionizing radiation sensor has an n+-i-p+ structure, produced using the planar process. The sensor contains an i-region in the form of a high-resistivity substrate of high-purity float-zone silicon with p-type conductivity, having on its front face n+-regions (2, 3), an SiO2 layer (4), aluminium metallization (5), and a passivation layer. On the front face of the substrate (1) n-regions (2) are formed by ion implantation; a masking layer of SiO2 (layer 4) is grown; aluminium metallization (5) is deposited; and a passivation layer (6) is applied. At least one or more n+-regions (2) are situated in the central portion of the front face of the substrate and occupy most of the surface area, forming a sensitive zone of the sensor, and at least two n+-regions and two p+-regions are formed as annular elements (guard rings) (3), arranged concentrically in a non-sensitive zone along the periphery of the substrate (1), in order to reduce the amount of surface current and to provide for a smooth drop in potential from the sensitive region to the periphery of the device. The number of n+-regions (2) that form the matrix, i.e. the sensitive zone, of the sensor is equal to 2k, where k can be equal to 0—one region. Ports (9) for connecting leads are situated around the edges of the substrate in its non-sensitive region. The n+-regions (2) which form the sensitive zone of the sensor have profiled portions along the edges in the form of a series of recesses (12).

98. 发明授权

US10784301B2 Image sensors including an amorphous region and an electron suppression region 有权
公开(公告)号：US10784301B2
公开(公告)日：2020-09-22
申请号：US16400279
申请日：2019-05-01
申请人： Samsung Electronics Co., Ltd.
发明人： Hyungi Hong , Kook Tae Kim , Jingyun Kim , Soojin Hong
IPC分类号： H01L27/14 , H01L27/11 , H01L29/06 , H01L27/146 , H01L21/266 , H01L21/265 , H01L27/11517
摘要： Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

99. 发明授权

US10777623B2 Electronic device including display with expanded sensor operability 有权
公开(公告)号：US10777623B2
公开(公告)日：2020-09-15
申请号：US15983562
申请日：2018-05-18
申请人： Samsung Electronics Co., Ltd.
发明人： Bong Jae Rhee , Song Hee Jung , Hyun Chang Shin , Hyun Woo Kim , Ji Hoon Park , Ji Hun Heo
IPC分类号： H01L29/04 , H01L27/14 , H01L31/036 , H01L27/32 , G02B5/30 , H01L51/52
摘要： Disclosed is an electronic device including a housing, a display panel, and an image sensor. The display panel includes a first polarization layer that causes light input from outside the electronic device to oscillate in a first direction as a first linearly-polarized light, a first retardation layer disposed below the first polarization layer and causing at least a portion of the first linearly-polarized light to oscillate as a circularly-polarized light, a substrate layer disposed below the first retardation layer and passing at least a portion of the circularly-polarized light, and a protection layer disposed below the substrate layer and protecting at least a portion of the substrate layer by covering the portion of the substrate layer.

100. 发明授权

US10756128B2 Integrated circuit device and method of fabricating integrated circuit 有权
公开(公告)号：US10756128B2
公开(公告)日：2020-08-25
申请号：US16244109
申请日：2019-01-10
申请人： UNITED MICROELECTRONICS CORP.
发明人： Kuo-Chih Lai , Shih-Min Chou , Ko-Wei Lin , Chin-Fu Lin , Wei-Chuan Tsai , Chun-Yao Yang , Chia-Fu Cheng , Yi-Syun Chou , Wei Chen
IPC分类号： H01L27/14 , H01L27/146 , H01L21/768 , H01L49/02
摘要： An integrated circuit device includes a complementary metal oxide semiconductor (CMOS) image sensor. The complementary metal oxide semiconductor (CMOS) image sensor includes a P-N junction photodiode, a transistor gate, a polysilicon plug and a stacked metal layer. The P-N junction photodiode is disposed in a substrate. The transistor gate and the polysilicon plug are disposed on the substrate, wherein the polysilicon plug is directly connected to the P-N junction photodiode. The stacked metal layer connects the polysilicon plug to the transistor gate, wherein the stacked metal layer includes a lower metal layer and an upper metal layer, and the lower metal layer includes a first metal silicide part contacting to the polysilicon plug. The present invention also provides a method of fabricating said integrated circuit device.

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