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11. 发明授权

US10685864B2 Contour pocket and hybrid susceptor for wafer uniformity 有权
公开(公告)号：US10685864B2
公开(公告)日：2020-06-16
申请号：US15616364
申请日：2017-06-07
申请人： Applied Materials, Inc.
发明人： Kaushal Gangakhedkar , Kallol Bera , Joseph Yudovsky
IPC分类号： H01L21/687 , H01L21/683 , H01L21/67
摘要： Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

12. 发明申请

US20190311920A1 SHOWERHEAD WITH INTERLACED GAS FEED AND REMOVAL AND METHODS OF USE 审中-公开
公开(公告)号：US20190311920A1
公开(公告)日：2019-10-10
申请号：US16376367
申请日：2019-04-05
申请人： Applied Materials, Inc.
发明人： Kallol Bera , Shahid Rauf , James Carducci , Vladimir Knyazik , Anantha K. Subramani
IPC分类号： H01L21/67 , H01J37/32
摘要： Gas distribution modules comprising a housing with an upper plenum and a lower plenum are described. One of the upper plenum and lower plenum is in fluid communication with an inlet and the other is in fluid communication with an outlet. A plurality of upper passages connects the upper plenum to the bottom of the housing to allow a flow of gas to pass through and be isolated from the first plenum.

13. 发明申请

US20170213701A1 Symmetric Plasma Source To Generate Pie Shaped Treatment 审中-公开
公开(公告)号：US20170213701A1
公开(公告)日：2017-07-27
申请号：US15413581
申请日：2017-01-24
申请人： Applied Materials, Inc.
发明人： Anantha K. Subramani , Farzad Houshmand , Philip A. Kraus , Abhishek Chowdhury , John C. Forster , Kallol Bera
IPC分类号： H01J37/32 , C23C16/50 , C23C16/455
CPC分类号： H01J37/32091 , C23C16/45525 , C23C16/4554 , C23C16/50 , C23C16/505 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32577 , H01J2237/334 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67069
摘要： Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

14. 发明申请

US20170051407A1 Heating Source For Spatial Atomic Layer Deposition 审中-公开
标题翻译：用于空间原子层沉积的加热源
公开(公告)号：US20170051407A1
公开(公告)日：2017-02-23
申请号：US15222010
申请日：2016-07-28
申请人： Applied Materials, Inc.
发明人： Garry K. Kwong , Joseph Yudovsky , Kevin Griffin , Kallol Bera , Omer Ozgun
IPC分类号： C23C16/455 , C23C16/458 , C23C16/52 , C23C16/46
CPC分类号： C23C16/46 , C23C16/4404 , C23C16/45551
摘要： Heating apparatus for heating substrates having a graphite body and at least one heating element comprising a continuous section of material disposed within the body are disclosed. Processing chambers incorporating the heating apparatus are also disclosed.
摘要翻译：公开了一种用于加热具有石墨体的基板和至少一个加热元件的加热装置，该加热元件包括设置在主体内的材料的连续部分。还公开了包括加热装置的加工室。

15. 发明授权

US09570275B2 Heated showerhead assembly 有权
标题翻译：加热花洒组件
公开(公告)号：US09570275B2
公开(公告)日：2017-02-14
申请号：US14531831
申请日：2014-11-03
申请人： Applied Materials, Inc.
发明人： James D. Carducci , Olga Regelman , Kallol Bera , Douglas A. Buchberger, Jr. , Paul Brillhart
IPC分类号： B05B1/14 , B05B1/24 , H01J37/32 , C23C16/44 , C23C16/455 , B32B43/00
CPC分类号： H01J37/3244 , B32B43/00 , C23C16/4412 , C23C16/45565 , C23C16/4557 , C23C16/45591 , H01J37/32449 , H01J37/32724 , H01J2237/3343 , Y10T29/49815
摘要： The present disclosure generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.
摘要翻译：本公开通常包括可用于将处理气体供应到处理室中的加热喷头组件。处理室可以是蚀刻室。当处理气体从处理室排出时，衬底的均匀处理可能是困难的。当处理气体从衬底被拉离并且朝向真空泵时，在蚀刻的情况下，等离子体在衬底上可能不均匀。不均匀的等离子体可能导致不均匀的蚀刻。为了防止不均匀的蚀刻，喷头组件可以分成两个区域，每个区域具有独立可控的气体引入和温度控制。第一区域对应于衬底的周边，而第二区域对应于衬底的中心。通过独立地控制温度和通过喷头区域的气体流动，可以增加基板的蚀刻均匀性。

16. 发明申请

US20230116396A1 CONTOUR POCKET AND HYBRID SUSCEPTOR FOR WAFER UNIFORMITY 有权
公开(公告)号：US20230116396A1
公开(公告)日：2023-04-13
申请号：US18079589
申请日：2022-12-12
申请人： Applied Materials, Inc.
发明人： Kaushal Gangakhedkar , Kallol Bera , Joseph Yudovsky
IPC分类号： H01L21/687 , H01L21/683 , H01L21/67
摘要： Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

17. 发明授权

US11581206B2 Capacitive sensor for chamber condition monitoring 有权
公开(公告)号：US11581206B2
公开(公告)日：2023-02-14
申请号：US16812066
申请日：2020-03-06
申请人： Applied Materials, Inc.
发明人： Yaoling Pan , Patrick John Tae , Leonard Tedeschi , Jennifer Sun , Philip Allan Kraus , Xiaopu Li , Kallol Bera , Michael D. Willwerth , Albert Barrett Hicks, III , Lisa J. Enman , Mark Joseph Saly , Daniel Thomas McCormick
IPC分类号： H01L21/67 , G01N27/22 , G05B19/418
摘要： Embodiments disclosed herein comprise a sensor. In an embodiment, the sensor comprises a substrate having a first surface and a second surface opposite from the first surface. In an embodiment, the sensor further comprises a first electrode over the first surface of the substrate, and a second electrode over the first surface of the substrate and adjacent to the first electrode. In an embodiment, the sensor further comprises a barrier layer over the first electrode and the second electrode.

18. 发明授权

US11557501B2 Contour pocket and hybrid susceptor for wafer uniformity 有权
公开(公告)号：US11557501B2
公开(公告)日：2023-01-17
申请号：US16902253
申请日：2020-06-15
申请人： Applied Materials, Inc.
发明人： Kaushal Gangakhedkar , Kallol Bera , Joseph Yudovsky
IPC分类号： H01L21/687 , H01L21/683 , H01L21/67
摘要： Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

19. 发明申请

US20220244205A1 CAPACITIVE SENSOR FOR MONITORING GAS CONCENTRATION 有权
公开(公告)号：US20220244205A1
公开(公告)日：2022-08-04
申请号：US17166967
申请日：2021-02-03
申请人： Applied Materials, Inc.
发明人： Xiaopu Li , Kallol Bera , Yaoling Pan , Kelvin Chan , Amir Bayati , Philip Allan Kraus , Kenric T. Choi , William John Durand
IPC分类号： G01N27/22 , H01L21/67 , C23C16/455 , C23C16/52 , G01N33/00
摘要： Embodiments disclosed herein include gas concentration sensors, and methods of using such gas concentration sensors. In an embodiment, a gas concentration sensor comprises a first electrode. In an embodiment the first electrode comprises first fingers. In an embodiment, the gas concentration sensor further comprises a second electrode. In an embodiment, the second electrode comprises second fingers that are interdigitated with the first fingers.

20. 发明授权

US11189502B2 Showerhead with interlaced gas feed and removal and methods of use 有权
公开(公告)号：US11189502B2
公开(公告)日：2021-11-30
申请号：US16376367
申请日：2019-04-05
申请人： Applied Materials, Inc.
发明人： Kallol Bera , Shahid Rauf , James Carducci , Vladimir Knyazik , Anantha K. Subramani
IPC分类号： H01J31/32 , H01L21/67 , H01L21/02 , H01H1/46 , H01J37/32
摘要： Gas distribution modules comprising a housing with an upper plenum and a lower plenum are described. One of the upper plenum and lower plenum is in fluid communication with an inlet and the other is in fluid communication with an outlet. A plurality of upper passages connects the upper plenum to the bottom of the housing to allow a flow of gas to pass through and be isolated from the first plenum.

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