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11. 发明授权

US06574398B2 Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector arrays 失效
公开(公告)号：US06574398B2
公开(公告)日：2003-06-03
申请号：US09738162
申请日：2000-12-14
申请人： Larry A. Coldren , Syn-Yem Hu
发明人： Larry A. Coldren , Syn-Yem Hu
IPC分类号： G02B630
CPC分类号： G02B6/4202 , G02B6/4239 , G02B6/4246 , G02B6/4249 , H01S5/02284 , H01S5/18358 , H01S5/4087 , H01S5/423
摘要： A low cost, high speed WDM optical link which employs a circular array of VCSEL emitters directly coupled to a multi-mode fiber through which multiple simultaneously optical transmissions are sent to an optical detector comprising a circular array of RCPD detectors receiving the multiple simultaneous transmissions. The emitters and detectors within each array are fabricated with a double-absorber design which avoids position sensitivity related to the cavity standing wave and eliminates the need for in-situ cavity-mode adjustment. In addition, a coupled-cavity structure is presented to achieve passbands with flat tops and steep sides to approach the ideal square-shape photoresponse and to ensure proper channel alignment.

12. 发明授权

US08030684B2 Mesa-type photodetectors with lateral diffusion junctions 有权
标题翻译：具有横向扩散结的Mesa型光电探测器
公开(公告)号：US08030684B2
公开(公告)日：2011-10-04
申请号：US12174079
申请日：2008-07-16
申请人： Syn-Yem Hu , Zhong Pan
发明人： Syn-Yem Hu , Zhong Pan
IPC分类号： H01L31/107
CPC分类号： H01L31/184 , H01L31/105 , Y02E10/544
摘要： The present invention relates to a stable mesa-type photodetector with lateral diffusion junctions. The invention has found that without resorting to the complicated regrowth approach, a simple Zn diffusion process can be used to create high-quality semiconductor junction interfaces at the exposed critical surface or to terminate the narrow-bandgap photon absorption layers. The invention converts the epi material layers near or at the vicinity of the etched mesa trench or etched mesa steps into a different dopant type through impurity diffusion process. Preferably the diffused surfaces are treated with a subsequent surface passivation. This invention can be applied to both top-illuminating and bottom-illuminating configurations.
摘要翻译：本发明涉及具有横向扩散结的稳定的台面型光电探测器。本发明已经发现，不采用复杂的再生方法，可以使用简单的Zn扩散工艺来在暴露的临界表面产生高质量的半导体结界面或者终止窄带隙光子吸收层。本发明通过杂质扩散工艺将蚀刻的台面沟槽附近或附近的外延层材料层转化成不同的掺杂剂类型。优选地，扩散表面用随后的表面钝化处理。本发明可以应用于顶部照明和底部照明配置。

13. 发明授权

US06195485B1 Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector 有权
标题翻译：直接耦合多模WDM光数据链路，采用单片集成多通道VCSEL和光电探测器
公开(公告)号：US06195485B1
公开(公告)日：2001-02-27
申请号：US09425542
申请日：1999-10-22
申请人： Larry A. Coldren , Syn-Yem Hu
发明人： Larry A. Coldren , Syn-Yem Hu
IPC分类号： G02B630
CPC分类号： G02B6/4202 , G02B6/4239 , G02B6/4246 , G02B6/4249 , H01S5/02284 , H01S5/18358 , H01S5/4087 , H01S5/423
摘要： A low cost, high speed WDM optical link which employs a circular array of VCSEL emitters directly coupled to a multi-mode fiber through which multiple simultaneously optical transmissions are sent to an optical detector comprising a circular array of RCPD detectors receiving the multiple simultaneous transmissions. The emitters and detectors within each array are fabricated with a double-absorber design which avoids position sensitivity related to the cavity standing wave and eliminates the need for in-situ cavity-mode adjustment. In addition, a coupled-cavity structure is presented to achieve passbands with flat tops and steep sides to approach the ideal square-shape photoresponse and to ensure proper channel alignment.
摘要翻译：一种低成本，高速WDM光链路，其采用直接耦合到多模光纤的VCSEL发射器的圆形阵列，多模光纤通过多模光纤将多个同时光传输发送到包括接收多个同时传输的RCPD检测器的圆阵列的光检测器。每个阵列中的发射器和检测器都采用双吸收器设计制造，避免了与腔体驻波相关的位置灵敏度，并消除了对原位腔模调整的需要。此外，提供耦合腔结构以实现具有平坦顶部和陡峭侧面的通带以接近理想的正方形光响应并且确保正确的通道对准。

14. 发明授权

US07893464B2 Semiconductor photodiode and method of manufacture thereof 有权
标题翻译：半导体光电二极管及其制造方法
公开(公告)号：US07893464B2
公开(公告)日：2011-02-22
申请号：US12057937
申请日：2008-03-28
申请人： Syn-Yem Hu , Zhong Pan
发明人： Syn-Yem Hu , Zhong Pan
IPC分类号： H01L29/73
CPC分类号： H01L31/107 , H01L31/1075 , H01L31/1844 , Y02E10/544
摘要： A method of manufacture of an avalanche photodiode involving a step of making a recess in a top window layer of an avalanche photodiode layer stack, such that a wall surrounding the recess runs smoothly and gradually from the level of the recess to the level of the window layer. Further, diffusing a dopant over the entire window layer area so as to form a p-n junction at the bottom of the recess, and providing a first electrical isolation region around the recess by buried ion implantation or wet oxidation in order to limit the flow of electrical current to the p-n junction. Forming an isolation trench around the photodiode and a second electrical isolation region by ion implantation into the trench such that the second electrical isolation region runs through the absorption layer of the photodiode.
摘要翻译：一种制造雪崩光电二极管的方法，包括在雪崩光电二极管层堆叠的顶窗层中形成凹陷的步骤，使得围绕凹部的壁平滑地从凹部的水平平移到窗口的水平面层。此外，在整个窗口层区域上扩散掺杂剂，以便在凹陷的底部形成pn结，并且通过掩埋离子注入或湿氧化提供围绕凹槽的第一电隔离区域，以限制电流电流到pn结。在光电二极管周围形成隔离沟槽，通过离子注入到沟槽中形成第二电隔离区域，使得第二电隔离区域穿过光电二极管的吸收层。

15. 发明申请

US20090242933A1 Semiconductor Photodiode And Method Of Manufacture Thereof 有权
标题翻译：半导体光电二极管及其制造方法
公开(公告)号：US20090242933A1
公开(公告)日：2009-10-01
申请号：US12057937
申请日：2008-03-28
申请人： Syn-Yem Hu , Zhong Pan
发明人： Syn-Yem Hu , Zhong Pan
IPC分类号： H01L31/0336 , H01L31/18
CPC分类号： H01L31/107 , H01L31/1075 , H01L31/1844 , Y02E10/544
摘要： A method of manufacture of an avalanche photodiode involving a step of making a recess in a top window layer of an avalanche photodiode layer stack, such that a wall surrounding the recess runs smoothly and gradually from the level of the recess to the level of the window layer. Further, diffusing a dopant over the entire window layer area so as to form a p-n junction at the bottom of the recess, and providing a first electrical isolation region around the recess by buried ion implantation or wet oxidation in order to limit the flow of electrical current to the p-n junction. Forming an isolation trench around the photodiode and a second electrical isolation region by ion implantation into the trench such that the second electrical isolation region runs through the absorption layer of the photodiode.
摘要翻译：一种制造雪崩光电二极管的方法，包括在雪崩光电二极管层堆叠的顶窗层中形成凹陷的步骤，使得围绕凹部的壁平滑地从凹部的水平平移到窗口的水平面层。此外，在整个窗口层区域上扩散掺杂剂，以便在凹陷的底部形成pn结，并且通过掩埋离子注入或湿氧化提供围绕凹槽的第一电隔离区域，以限制电流电流到pn结。在光电二极管周围形成隔离沟槽，通过离子注入到沟槽中形成第二电隔离区域，使得第二电隔离区域穿过光电二极管的吸收层。

16. 发明申请

US20150171059A1 SUBMOUNT FOR LED DEVICE PACKAGE 有权
标题翻译：用于LED设备包的SUBMOUNT
公开(公告)号：US20150171059A1
公开(公告)日：2015-06-18
申请号：US14114332
申请日：2013-06-28
申请人： Syn-Yem Hu
发明人： Syn-Yem Hu
IPC分类号： H01L25/075 , H01L33/48 , H01L33/50 , H01L33/60
CPC分类号： H01L25/0753 , F21K9/00 , F21V7/06 , F21Y2115/10 , H01L33/486 , H01L33/50 , H01L33/507 , H01L33/60 , H01L2924/0002 , H01L2933/0033 , H01L2933/0058 , H01L2933/0091 , H01L2924/00
摘要： A light emitting diode (LED) assembly may include an LED semiconductor attached to a first surface of a submount made of optically transparent material. The submount may redirect back side light emitted by the LED semiconductor light away from the LED semiconductor to increase recovery of back side light. The submount may be used with an external bulk reflecting element. The submount may itself include a reflective coating at a second surface opposite from the first surface and be mounted on a reflecting substrate. The submount may include a phosphor forming the first surface or the second surface. The first surface or the second surface may be a textured surface. An array of LED semiconductors may be mounted to the submount. The array of LED semiconductors may be disposed on the submount in an arrangement that optimizes total light output of the LED assembly.
摘要翻译：发光二极管（LED）组件可以包括附接到由光学透明材料制成的底座的第一表面的LED半导体。底座可以将由LED半导体光发射的背侧侧光从LED半导体重新引导，以增加后侧光的恢复。底座可以与外部体反射元件一起使用。底座本身可以在与第一表面相对的第二表面上包括反射涂层，并且安装在反射基板上。底座可以包括形成第一表面或第二表面的磷光体。第一表面或第二表面可以是纹理表面。一组LED半导体可以安装在底座上。 LED半导体阵列可以以优化LED组件的总光输出的布置设置在底座上。

17. 发明授权

US08008688B2 Photodiode and method of fabrication 有权
标题翻译：光电二极管和制造方法
公开(公告)号：US08008688B2
公开(公告)日：2011-08-30
申请号：US12060342
申请日：2008-04-01
申请人： Syn-Yem Hu
发明人： Syn-Yem Hu
IPC分类号： H01L31/07
CPC分类号： H01L31/1844 , H01L31/1075 , Y02E10/544
摘要： The present invention provides a highly reliable photodiode, as well as a simple method of fabricating such a photodiode. During fabrication of the photodiode, a grading layer is epitaxially grown on a top surface of an absorption layer, and a blocking layer, for inhibiting current flow, is epitaxially grown on a top surface of the grading layer. The blocking layer is then etched to expose a window region of the top surface of the grading layer. Thus, the etched blocking layer defines an active region of the absorption layer. A window layer is epitaxially regrown on a top surface of the blocking layer and on the window region of the top surface of the grading layer, and is then etched to form a window mesa.
摘要翻译：本发明提供了高度可靠的光电二极管，以及制造这种光电二极管的简单方法。在制造光电二极管期间，在吸收层的顶表面上外延生长分级层，并且在分级层的顶表面上外延生长用于抑制电流流动的阻挡层。然后蚀刻阻挡层以暴露分级层的顶表面的窗口区域。因此，蚀刻阻挡层限定吸收层的有源区。将窗口层外延再生长在阻挡层的顶表面和分级层的顶表面的窗口区域上，然后被蚀刻以形成窗台。

18. 发明申请

US20090020841A1 Mesa-Type Photodetectors With Lateral Diffusion Junctions 有权
标题翻译：具有侧向扩散接头的Mesa型光电探测器
公开(公告)号：US20090020841A1
公开(公告)日：2009-01-22
申请号：US12174079
申请日：2008-07-16
申请人： Syn-Yem Hu , Zhong Pan
发明人： Syn-Yem Hu , Zhong Pan
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/184 , H01L31/105 , Y02E10/544
摘要： The present invention relates to a stable mesa-type photodetector with lateral diffusion junctions. The invention has found that without resorting to the complicated regrowth approach, a simple Zn diffusion process can be used to create high-quality semiconductor junction interfaces at the exposed critical surface or to terminate the narrow-bandgap photon absorption layers. The invention converts the epi material layers near or at the vicinity of the etched mesa trench or etched mesa steps into a different dopant type through impurity diffusion process. Preferably the diffused surfaces are treated with a subsequent surface passivation. This invention can be applied to both top-illuminating and bottom-illuminating configurations.
摘要翻译：本发明涉及具有横向扩散结的稳定的台面型光电探测器。本发明已经发现，不采用复杂的再生方法，可以使用简单的Zn扩散工艺来在暴露的临界表面产生高质量的半导体结界面或者终止窄带隙光子吸收层。本发明通过杂质扩散工艺将蚀刻的台面沟槽附近或附近的外延层材料层转化成不同的掺杂剂类型。优选地，扩散表面用随后的表面钝化处理。本发明可以应用于顶部照明和底部照明配置。

19. 发明授权

US06658040B1 High speed VCSEL 有权
标题翻译：高速VCSEL
公开(公告)号：US06658040B1
公开(公告)日：2003-12-02
申请号：US09627878
申请日：2000-07-28
申请人： Syn-Yem Hu , I-Hsing Tan , Tchang-Hun Oh
发明人： Syn-Yem Hu , I-Hsing Tan , Tchang-Hun Oh
IPC分类号： H01S5183
CPC分类号： H01S5/18311 , H01S5/0425 , H01S5/06226 , H01S5/18308 , H01S5/1833 , H01S5/18333 , H01S2301/176
摘要： A vertical cavity surface emitting laser (VCSEL) has a top mirror structure with a surface, a light generation region, and a bottom mirror structure for reflecting light toward said top mirror structure. The VCSEL has a semiconductor portion with a surface that is disposed substantially planar with respect to the surface of the top mirror structure. At least one aperture-defining layer having an isolatable material is disposed in at least one of the bottom mirror structure and the top mirror structure. The aperture-defining layer has a conducting region, an insulating region having an aperture-defining surface for defining the conducting region, and a single trench adjacent to the insulating region for use in generating the insulating region. The trench having a continuous geometry for reducing the parasitic capacitance of the VCSEL.
摘要翻译：垂直腔表面发射激光器（VCSEL）具有具有表面的上反射镜结构，光产生区域和用于将光朝向所述顶部反射镜结构反射的底部反射镜结构。 VCSEL具有半导体部分，其表面相对于顶部反射镜结构的表面基本上是平面的。具有可隔离材料的至少一个孔径限定层设置在底部反射镜结构和顶部反射镜结构中的至少一个中。孔限定层具有导电区域，具有用于限定导电区域的孔限定表面的绝缘区域和与绝缘区域相邻的单个沟槽，用于产生绝缘区域。沟槽具有连续的几何形状，用于减小VCSEL的寄生电容。

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