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11. 发明授权

US09647025B2 Solid-state imaging device, method of manufacturing the same, and electronic apparatus 有权
公开(公告)号：US09647025B2
公开(公告)日：2017-05-09
申请号：US14563036
申请日：2014-12-08
申请人： Sony Corporation
发明人： Kazufumi Watanabe , Yasushi Maruyama
IPC分类号： H01L27/146 , H04N5/359 , H01L31/0216 , H01L31/18 , H01L21/78
CPC分类号： H01L27/14645 , H01L21/7806 , H01L27/14612 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L31/0216 , H01L31/02162 , H01L31/18 , H01L31/1804 , H04N5/359 , Y02P70/521
摘要： A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

12. 发明申请

US20160211301A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT 审中-公开
公开(公告)号：US20160211301A1
公开(公告)日：2016-07-21
申请号：US15084906
申请日：2016-03-30
申请人： Sony Corporation
发明人： Susumu Hiyama , Kazufumi Watanabe
IPC分类号： H01L27/146
CPC分类号： H01L27/1462 , H01L27/14612 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14643
摘要： A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.

13. 发明授权

US09006018B2 Method of manufacturing a solid-state imaging device 有权
标题翻译：制造固态成像装置的方法
公开(公告)号：US09006018B2
公开(公告)日：2015-04-14
申请号：US13920257
申请日：2013-06-18
申请人： Sony Corporation
发明人： Kazufumi Watanabe
IPC分类号： H01L31/0232 , H01L27/146
CPC分类号： H01L31/0232 , H01L21/76898 , H01L23/481 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L2924/0002 , H01L2924/00
摘要： A solid-state imaging device including a substrate; a wiring layer formed on a front side of the substrate in which pixels are formed; a surface electrode pad section formed in the wiring layer; a light-shielding film formed on a rear side of the substrate; a pad section base layer formed in the same layer as the light-shielding film; an on-chip lens layer formed over the light-shielding film and the pad section base layer in a side opposite from the substrate side; a back electrode pad section formed above the on-chip lens layer; a through-hole formed to penetrate the on-chip lens layer, the pad section base layer, and the substrate so as to expose the surface electrode pad section; and a through-electrode layer which is formed in the through-hole and connects the surface electrode pad section and the back electrode pad section.
摘要翻译：一种固态成像装置，包括：基板; 形成在其上形成有像素的基板的前侧的布线层; 形成在所述布线层中的表面电极焊盘部; 形成在所述基板的后侧的遮光膜; 形成在与所述遮光膜相同的层中的焊盘部分基底层; 在与所述基板侧相反的一侧的所述遮光膜和所述焊盘部分基底层上形成的片上透镜层; 形成在片上透镜层之上的背面电极焊盘部; 形成为贯穿片上透镜层的通孔，焊盘部分基底层和基板，以露出表面电极焊盘部分; 以及形成在所述通孔中并连接所述表面电极焊盘部和所述背面电极焊盘部的贯通电极层。

14. 发明申请

US20140191353A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT 审中-公开
标题翻译：固态成像装置，其制造方法和电子设备
公开(公告)号：US20140191353A1
公开(公告)日：2014-07-10
申请号：US14204837
申请日：2014-03-11
申请人： Sony Corporation
发明人： Susumu Hiyama , Kazufumi Watanabe
IPC分类号： H01L27/146
CPC分类号： H01L27/1462 , H01L27/14612 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14643
摘要： A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.
摘要翻译：一种固体摄像器件，包括：包含多个光电二极管的半导体层，位于所述半导体层的第一表面上的第一抗反射膜，位于所述第一抗反射膜上方的第二抗反射膜，具有相邻侧面的遮光层到第一和第二抗反射膜中的至少一个。

15. 发明申请

US20130280848A1 SOLID-STATE IMAGING DEVICE AND ELECTRONIC EQUIPMENT 有权
标题翻译：固态成像装置和电子设备
公开(公告)号：US20130280848A1
公开(公告)日：2013-10-24
申请号：US13920257
申请日：2013-06-18
申请人： Sony Corporation
发明人： Kazufumi Watanabe
IPC分类号： H01L31/0232
CPC分类号： H01L31/0232 , H01L21/76898 , H01L23/481 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L2924/0002 , H01L2924/00
摘要： A solid-state imaging device including a substrate; a wiring layer formed on a front side of the substrate in which pixels are formed; a surface electrode pad section formed in the wiring layer; a light-shielding film formed on a rear side of the substrate; a pad section base layer formed in the same layer as the light-shielding film; an on-chip lens layer formed over the light-shielding film and the pad section base layer in a side opposite from the substrate side; a back electrode pad section formed above the on-chip lens layer; a through-hole formed to penetrate the on-chip lens layer, the pad section base layer, and the substrate so as to expose the surface electrode pad section; and a through-electrode layer which is formed in the through-hole and connects the surface electrode pad section and the back electrode pad section.
摘要翻译：一种固态成像装置，包括：基板; 形成在其上形成有像素的基板的前侧的布线层; 形成在所述布线层中的表面电极焊盘部; 形成在所述基板的后侧的遮光膜; 形成在与所述遮光膜相同的层中的焊盘部分基底层; 在与所述基板侧相反的一侧的所述遮光膜和所述焊盘部分基底层上形成的片上透镜层; 形成在片上透镜层之上的背面电极焊盘部; 形成为贯穿片上透镜层的通孔，焊盘部分基底层和基板，以露出表面电极焊盘部分; 以及形成在所述通孔中并连接所述表面电极焊盘部和所述背面电极焊盘部的贯通电极层。

16. 发明授权

US10326920B2 Solid-state imaging device and method for manufacturing the same, and electronic apparatus 有权
公开(公告)号：US10326920B2
公开(公告)日：2019-06-18
申请号：US16040145
申请日：2018-07-19
申请人： SONY CORPORATION
发明人： Yoshiaki Masuda , Yuki Miyanami , Hideshi Abe , Tomoyuki Hirano , Masanari Yamaguchi , Yoshiki Ebiko , Kazufumi Watanabe , Tomoharu Ogita
IPC分类号： H04N5/225 , G02B1/118 , H01L27/146 , H01L31/0232 , H04N5/369 , H01L31/10 , H04N5/359 , H04N5/374 , H04N9/04
摘要： The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

17. 发明申请

US20190074318A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20190074318A1
公开(公告)日：2019-03-07
申请号：US16178454
申请日：2018-11-01
申请人： Sony Corporation
发明人： Kazufumi Watanabe , Yasushi Maruyama
IPC分类号： H01L27/146 , H01L31/18 , H04N5/359 , H01L31/0216 , H01L21/78
摘要： A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

18. 发明申请

US20180019271A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT 审中-公开
公开(公告)号：US20180019271A1
公开(公告)日：2018-01-18
申请号：US15719097
申请日：2017-09-28
申请人： Sony Corporation
发明人： Susumu Hiyama , Kazufumi Watanabe
IPC分类号： H01L27/146
摘要： A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.

19. 发明申请

US20170309674A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20170309674A1
公开(公告)日：2017-10-26
申请号：US15647093
申请日：2017-07-11
申请人： Sony Corporation
发明人： Kazufumi Watanabe , Yasushi Maruyama
IPC分类号： H01L27/146 , H01L31/18 , H01L31/0216 , H04N5/359
CPC分类号： H01L27/14645 , H01L21/7806 , H01L27/14612 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L31/0216 , H01L31/02162 , H01L31/18 , H01L31/1804 , H04N5/359 , Y02P70/521
摘要： A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

20. 发明授权

US09794457B2 Solid-state imaging device having a moth-eye structure and light blocking portions, method for manufacturing the same, and electronic apparatus 有权
公开(公告)号：US09794457B2
公开(公告)日：2017-10-17
申请号：US14891947
申请日：2014-06-20
申请人： SONY CORPORATION
发明人： Yoshiaki Masuda , Yuki Miyanami , Hideshi Abe , Tomoyuki Hirano , Masanari Yamaguchi , Yoshiki Ebiko , Kazufumi Watanabe , Tomoharu Ogita
IPC分类号： H04N5/225 , G02B1/11 , H01L27/146 , H01L31/0232 , H04N5/369 , G02B1/118
摘要： The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

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