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    • 13. 发明申请
    • THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
    • 薄膜晶体管阵列基板及其制造方法
    • US20060071243A1
    • 2006-04-06
    • US10711677
    • 2004-09-30
    • Han-Tung HsuWen-Hsiung LiuChien-Kuo He
    • Han-Tung HsuWen-Hsiung LiuChien-Kuo He
    • H01L27/148
    • H01L27/124G02F1/133509G02F1/1345
    • A thin film transistor array substrate and manufacturing method thereof are provided. A shielding layer is formed between lead lines in a peripheral region of the substrate. The shielding layer and a gate layer may be formed simultaneously so that the light leakage between lead lines connected to a source/drain layer is reduced. Alternatively, the shielding layer and the source/drain layer may be formed simultaneously so that the light leakage between lead lines connected to a gate layer is reduced. Furthermore, a common voltage may be applied to the shielding layer so that signal interference between lead lines is reduced. Moreover, in an electrical inspection of the thin film transistor array, any short circuit between the lead lines and the shielding layer can be determined.
    • 提供薄膜晶体管阵列基板及其制造方法。 在基板的周边区域中的引线之间形成屏蔽层。 可以同时形成屏蔽层和栅极层,使得连接到源极/漏极层的引线之间的漏光减少。 或者,屏蔽层和源极/漏极层可以同时形成,使得连接到栅极层的引线之间的漏光减少。 此外,可以向屏蔽层施加公共电压,使得引线之间的信号干扰减小。 此外,在薄膜晶体管阵列的电气检查中,可以确定导线与屏蔽层之间的任何短路。
    • 14. 发明申请
    • ACTIVE DEVICES ARRAY SUBSTRATE AND REPAIRING METHOD THEREOF
    • 主动装置阵列基板及其修复方法
    • US20080006858A1
    • 2008-01-10
    • US11309007
    • 2006-06-08
    • Wen-Hsiung Liu
    • Wen-Hsiung Liu
    • H01L31/062H01L31/113
    • G02F1/1345G02F1/136204G02F2001/133388
    • An active device array substrate including a substrate, a plurality of active devices, a plurality of the first lead lines, a plurality of the second lead lines and a first floating light-shielding layer is provided. The substrate has a display region and a peripheral circuit region and the active devices are arranged within the peripheral circuit region on the substrate to form an array. Besides, the first lead lines and the second lead lines are disposed within the peripheral circuit region on the substrate. The first floating light-shielding layer is disposed between the first lead lines and covers the part of the first lead lines. Furthermore, the floating light-shielding layer is not connected with any voltage sources completely. Therefore, the active devices array substrate can prevent the light leakage from been resulted between the first lead lines and the power consumption of the active devices array substrate is reduced.
    • 提供一种有源器件阵列基板,包括基板,多个有源器件,多个第一引线,多个第二引线和第一浮动遮光层。 衬底具有显示区域和外围电路区域,并且有源器件布置在衬底上的外围电路区域内以形成阵列。 此外,第一引线和第二引线设置在基板上的外围电路区域内。 第一浮动遮光层设置在第一引线之间并覆盖第一引线的一部分。 此外,浮动遮光层不与任何电压源完全连接。 因此,有源器件阵列衬底可以防止在第一引线之间产生光泄漏,并且有源器件阵列衬底的功耗降低。
    • 15. 发明申请
    • Pixel structure and liquid crystal display panel thereof
    • 像素结构及其液晶显示面板
    • US20070229722A1
    • 2007-10-04
    • US11397659
    • 2006-04-03
    • Wen-Hsiung Liu
    • Wen-Hsiung Liu
    • G02F1/136
    • G02F1/1368
    • A pixel structure comprising a substrate, a first metal layer, a first dielectric layer, a semiconductor layer, a second metal layer and a pixel electrode is provided. The first metal layer, disposed on the substrate, includes a gate and a scan line. The first dielectric layer covers the first metal layer. The semiconductor layer is disposed on the first dielectric layer above the gate. The second metal layer includes a source, a drain and a data line connected with the source. The pixel electrode is electrically connected with the drain. Wherein, the drain has a main body and an extension portion projecting out of the scan line. The main body has a first length (L1). The interface of the extension portion and the scan line is a second length (L2). The L1/L2 is predetermined such that the Cgd of the pixel structure is fixed.
    • 提供了包括基板,第一金属层,第一介电层,半导体层,第二金属层和像素电极的像素结构。 设置在基板上的第一金属层包括栅极和扫描线。 第一介电层覆盖第一金属层。 半导体层设置在栅极上方的第一电介质层上。 第二金属层包括源极,漏极和与源极连接的数据线。 像素电极与漏极电连接。 其中,排水口具有从扫描线突出的主体和延伸部分。 主体具有第一长度(L 1)。 延伸部分和扫描线的界面是第二长度(L 2)。 L 1 / L 2是预定的,使得像素结构的Cgd是固定的。
    • 16. 发明申请
    • THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY AND REPAIRING METHOD THEREOF
    • 薄膜晶体管,薄膜晶体管阵列及其修复方法
    • US20070187686A1
    • 2007-08-16
    • US11307540
    • 2006-02-13
    • Wen-Hsiung Liu
    • Wen-Hsiung Liu
    • H01L29/04
    • H01L27/124G02F2001/13606G02F2001/13625G02F2001/136268H01L29/66757
    • A thin film transistor (TFT) including a gate, a semiconductor layer, a source and a drain is provided. The gate has a control part, a connection part and a capacitance compensation part. The connection part is disposed between the control part and the capacitance compensation part for joining the two parts together. The semiconductor layer is disposed over the gate, the source and the drain are disposed on the semiconductor layer. An end of the drain overlaps the control part of the gate with a first region for composing a first parasitic capacitance; while another end of the drain overlaps the capacitance compensation part of the gate with a second region for composing a second parasitic capacitance. In a TFT array with the TFT, the sum of the first parasitic capacitance and the second parasitic capacitance is a constant.
    • 提供了包括栅极,半导体层,源极和漏极的薄膜晶体管(TFT)。 门具有控制部分,连接部分和电容补偿部分。 连接部设置在控制部和电容补偿部之间,用于将两部分接合在一起。 半导体层设置在栅极上方,源极和漏极设置在半导体层上。 漏极的一端与门的控制部分重叠用于构成第一寄生电容的第一区域; 而漏极的另一端与栅极的电容补偿部分重叠用于构成第二寄生电容的第二区域。 在具有TFT的TFT阵列中,第一寄生电容和第二寄生电容之和为常数。
    • 19. 发明授权
    • Method of adjusting the brightness of a display device
    • 调整显示装置的亮度的方法
    • US07466324B2
    • 2008-12-16
    • US11089828
    • 2005-03-24
    • Ying-Hui ChenWen-Hsiung Liu
    • Ying-Hui ChenWen-Hsiung Liu
    • G09G5/10
    • G09G3/006G09G3/3611
    • A method of adjusting the brightness of a display device is provided. The method includes providing a plurality of saturated level-adjust voltages to various level adjustments of the display device when the central brightness is saturated. Then, a computation of the saturated level-adjust voltage of each level adjustment is carried out to obtain a display voltage of each level adjustment. Thereafter, a computation of the saturated level-adjust voltage, a common voltage and the display voltage of each level adjustment is carried out to obtain a feed-through voltage for each level adjustment. After that, a computation of the feed-through voltage and the saturated level-adjust voltage of each level adjustment is carried out to obtain a liquid crystal capacitance value for each level adjustment. Finally, a simulation of the liquid crystal capacitance value of each level adjustment is carried out to obtain an optimized level-adjust voltage for each level adjustment.
    • 提供了一种调节显示装置的亮度的方法。 该方法包括当中心亮度饱和时,向显示装置的各种电平调整提供多个饱和电平调整电压。 然后,进行各电平调整的饱和电平调整电压的计算,得到各电平调整的显示电压。 此后,进行各电平调整的饱和电平调整电压,公共电压和显示电压的计算,以获得每个电平调整的馈通电压。 之后,进行各电平调整的馈通电压和饱和电平调整电压的计算,得到每个电平调整的液晶电容值。 最后,进行各电平调整的液晶电容值的模拟,以获得每个电平调整的优化电平调整电压。