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11. 发明授权

US09209176B2 Semiconductor modules and methods of forming the same 有权
标题翻译：半导体模块及其形成方法
公开(公告)号：US09209176B2
公开(公告)日：2015-12-08
申请号：US13690103
申请日：2012-11-30
申请人： Transphorm Inc.
发明人： Yifeng Wu , Sung Hae Yea
IPC分类号： H01L27/088 , H01L21/58 , H03K17/16 , H01L27/06 , H01L23/373 , H01L25/065 , H01L25/07 , H01L23/498 , H01L23/00
CPC分类号： H01L23/49838 , H01L21/56 , H01L23/3735 , H01L23/49811 , H01L23/49866 , H01L23/552 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/80 , H01L24/85 , H01L25/0655 , H01L25/0657 , H01L25/072 , H01L25/074 , H01L25/50 , H01L27/0629 , H01L27/0883 , H01L29/2003 , H01L29/7787 , H01L2224/291 , H01L2224/2929 , H01L2224/293 , H01L2224/32145 , H01L2224/48091 , H01L2224/48105 , H01L2224/48137 , H01L2224/48145 , H01L2224/48249 , H01L2224/73265 , H01L2224/83801 , H01L2224/83851 , H01L2225/06568 , H01L2924/00014 , H01L2924/10253 , H01L2924/1033 , H01L2924/12036 , H01L2924/13055 , H01L2924/13064 , H01L2924/13091 , H01L2924/30107 , H03K17/161 , H03K17/162 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2924/00012
摘要： Electronic modules, and methods of forming and operating modules, are described. The modules include a capacitor, a first switching device, and a second switching device. The electronic modules further include a substrate such as a DBC substrate, which includes an insulating layer between a first metal layer and a second metal layer, and may include multiple layers of DBC substrates stacked over one another. The first metal layer includes a first portion and a second portion isolated from one another by a trench formed through the first metal layer between the two portions. The first and second switching devices are over the first metal layer, a first terminal of the capacitor is electrically connected to the first portion of the first metal layer, and a second terminal of the capacitor is electrically connected to the second portion of the first metal layer, with the capacitor extending over the trench.
摘要翻译：描述了电子模块以及模块的形成和操作方法。模块包括电容器，第一开关器件和第二开关器件。电子模块还包括诸如DBC衬底的衬底，其包括在第一金属层和第二金属层之间的绝缘层，并且可以包括彼此堆叠的多层DBC衬底。第一金属层包括通过在两个部分之间穿过第一金属层形成的沟槽彼此隔离的第一部分和第二部分。第一和第二开关器件在第一金属层之上，电容器的第一端子电连接到第一金属层的第一部分，并且电容器的第二端子电连接到第一金属的第二部分层，电容器在沟槽上延伸。

12. 发明授权

US09087718B2 Enhancement-mode III-nitride devices 有权
标题翻译：增强型III族氮化物器件
公开(公告)号：US09087718B2
公开(公告)日：2015-07-21
申请号：US13799989
申请日：2013-03-13
申请人： Transphorm Inc.
发明人： Rakesh K. Lal
IPC分类号： H01L29/66 , H01L27/088 , H01L29/78 , H01L21/8252 , H01L27/06 , H01L27/085 , H01L29/423
CPC分类号： H01L29/7787 , H01L21/0217 , H01L21/0254 , H01L21/8252 , H01L23/291 , H01L23/3171 , H01L23/535 , H01L24/48 , H01L27/0605 , H01L27/0629 , H01L27/085 , H01L27/0883 , H01L29/2003 , H01L29/404 , H01L29/407 , H01L29/4175 , H01L29/4236 , H01L29/518 , H01L29/66462 , H01L29/66522 , H01L29/78 , H01L2224/48091 , H01L2224/4813 , H01L2924/00014 , H01L2924/10323 , H01L2924/1033 , H01L2924/10344 , H01L2924/10346 , H01L2924/13055 , H01L2924/13064 , H01L2924/00 , H01L2224/45099
摘要： A III-N enhancement-mode transistor includes a III-N structure including a conductive channel, source and drain contacts, and a gate electrode between the source and drain contacts. An insulator layer is over the III-N structure, with a recess formed through the insulator layer in a gate region of the transistor, with the gate electrode at least partially in the recess. The transistor further includes a field plate having a portion between the gate electrode and the drain contact, the field plate being electrically connected to the source contact. The gate electrode includes an extending portion that is outside the recess and extends towards the drain contact. The separation between the conductive channel and the extending portion of the gate electrode is greater than the separation between the conductive channel and the portion of the field plate that is between the gate electrode and the drain contact.
摘要翻译： III-N增强型晶体管包括III-N结构，其包括导电沟道，源极和漏极接触以及源极和漏极接触之间的栅电极。绝缘体层在III-N结构之上，在晶体管的栅极区中通过绝缘体层形成凹槽，栅电极至少部分地在凹槽中。晶体管还包括具有在栅电极和漏极接触之间的部分的场板，场板电连接到源触点。栅极电极包括在凹部外部并朝向漏极接触部延伸的延伸部分。导电沟道和栅电极的延伸部分之间的间隔大于导电通道与栅电极和漏极接触之间的场板部分之间的间隔。

13. 发明授权

US09041435B2 Method of forming electronic components with reactive filters 有权
标题翻译：用反应式过滤器形成电子部件的方法
公开(公告)号：US09041435B2
公开(公告)日：2015-05-26
申请号：US14307234
申请日：2014-06-17
申请人： Transphorm, Inc.
发明人： James Honea , Yifeng Wu
IPC分类号： H03K3/00 , H03K17/687 , H02M1/12 , H03K17/16 , H03K17/567 , H02P7/29 , H02M7/5395
CPC分类号： H03K17/687 , H02M1/126 , H02M7/5395 , H02P7/29 , H03K17/162 , H03K17/567 , H03K17/6871 , Y10T29/49105
摘要： An electronic component comprising a half bridge adapted for operation with an electrical load having an operating frequency is described. The half bridge comprises a first switch and a second switch each having a switching frequency, the first switch and the second switch each including a first terminal, a second terminal, and a control terminal, wherein the first terminal of the first switch and the second terminal of the second switch are both electrically connected to a node. The electronic component further includes a filter having a 3 dB roll-off frequency, the 3 dB roll-off frequency being less than the switching frequency of the switches but greater than the operating frequency of the electrical load. The first terminal of the filter is electrically coupled to the node, and the 3 dB roll-off frequency of the filter is greater than 5 kHz.
摘要翻译：描述了包括适于与具有工作频率的电负载一起工作的半桥的电子部件。半桥包括第一开关和第二开关，每个具有开关频率，第一开关和第二开关各自包括第一端子，第二端子和控制端子，其中第一开关的第一端子和第二开关第二开关的端子都电连接到节点。电子部件还包括具有3dB滚降频率的滤波器，3dB滚降频率小于开关的开关频率，但大于电负载的工作频率。滤波器的第一个端子电耦合到节点，滤波器的3 dB滚降频率大于5 kHz。

14. 发明授权

US09041065B2 Semiconductor heterostructure diodes 有权
标题翻译：半导体异质结二极管
公开(公告)号：US09041065B2
公开(公告)日：2015-05-26
申请号：US13973890
申请日：2013-08-22
申请人： Transphorm Inc.
发明人： Yifeng Wu , Umesh Mishra , Primit Parikh , Rongming Chu , Ilan Ben-Yaacov , Likun Shen
IPC分类号： H01L29/739 , H01L29/06 , H01L29/20 , H01L29/205 , H01L29/872 , H01L27/06 , H01L29/778 , H01L29/423
CPC分类号： H01L29/0615 , H01L27/0629 , H01L29/2003 , H01L29/205 , H01L29/4236 , H01L29/778 , H01L29/7786 , H01L29/7787 , H01L29/872
摘要： Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2DEG, forming an ohmic contact with the layer containing the 2DEG.
摘要翻译：平面肖特基二极管，其半导体材料包括在至少一个半导体层中诱导2DEG的异质结。金属阳极触点位于上半导体层的顶部，与该层形成肖特基接触。金属阴极接触件连接到2DEG，与包含2DEG的层形成欧姆接触。

15. 发明授权

US08895423B2 Method for making semiconductor diodes with low reverse bias currents 有权
标题翻译：制造具有低反向偏置电流的半导体二极管的方法
公开(公告)号：US08895423B2
公开(公告)日：2014-11-25
申请号：US14288682
申请日：2014-05-28
申请人： Transphorm, Inc.
发明人： Yuvaraj Dora
IPC分类号： H01L21/28 , H01L21/322 , H01L21/44 , H01L29/66 , H01L29/47
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/475 , H01L29/66219 , H01L29/66462 , H01L29/778 , H01L29/861
摘要： A diode is described with a III-N material structure, an electrically conductive channel in the III-N material structure, two terminals, wherein a first terminal is an anode adjacent to the III-N material structure and a second terminal is a cathode in ohmic contact with the electrically conductive channel, and a dielectric layer over at least a portion of the anode. The anode comprises a first metal layer adjacent to the III-N material structure, a second metal layer, and an intermediary electrically conductive structure between the first metal layer and the second metal layer. The intermediary electrically conductive structure reduces a shift in an on-voltage or reduces a shift in reverse bias current of the diode resulting from the inclusion of the dielectric layer. The diode can be a high voltage device and can have low reverse bias currents.
摘要翻译：以III-N材料结构描述二极管，III-N材料结构中的导电通道，两个端子，其中第一端子是与III-N材料结构相邻的阳极，第二端子是阴极与导电通道欧姆接触，以及在阳极的至少一部分上的电介质层。阳极包括与III-N材料结构相邻的第一金属层，第二金属层和在第一金属层和第二金属层之间的中间导电结构。中间导电结构减少了导通电压的偏移，或减少了由包含电介质层导致的二极管的反向偏置电流的偏移。二极管可以是高电压器件，并且可以具有低反向偏置电流。

16. 发明申请

US20140273422A1 METHOD FOR MAKING SEMICONDUCTOR DIODES WITH LOW REVERSE BIAS CURRENTS 有权
标题翻译：用于制造具有低反向偏置电流的半导体二极管的方法
公开(公告)号：US20140273422A1
公开(公告)日：2014-09-18
申请号：US14288682
申请日：2014-05-28
申请人： Transphorm, Inc.
发明人： Yuvaraj Dora
IPC分类号： H01L29/47 , H01L29/66
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/475 , H01L29/66219 , H01L29/66462 , H01L29/778 , H01L29/861
摘要： A diode is described with a III-N material structure, an electrically conductive channel in the III-N material structure, two terminals, wherein a first terminal is an anode adjacent to the III-N material structure and a second terminal is a cathode in ohmic contact with the electrically conductive channel, and a dielectric layer over at least a portion of the anode. The anode comprises a first metal layer adjacent to the III-N material structure, a second metal layer, and an intermediary electrically conductive structure between the first metal layer and the second metal layer. The intermediary electrically conductive structure reduces a shift in an on-voltage or reduces a shift in reverse bias current of the diode resulting from the inclusion of the dielectric layer. The diode can be a high voltage device and can have low reverse bias currents.
摘要翻译：以III-N材料结构描述二极管，III-N材料结构中的导电通道，两个端子，其中第一端子是与III-N材料结构相邻的阳极，第二端子是阴极与导电通道欧姆接触，以及在阳极的至少一部分上的电介质层。阳极包括与III-N材料结构相邻的第一金属层，第二金属层和在第一金属层和第二金属层之间的中间导电结构。中间导电结构减少了导通电压的偏移，或减少了由包含电介质层导致的二极管的反向偏置电流的偏移。二极管可以是高电压器件，并且可以具有低反向偏置电流。

17. 发明授权

US08742460B2 Transistors with isolation regions 有权
标题翻译：具有隔离区域的晶体管
公开(公告)号：US08742460B2
公开(公告)日：2014-06-03
申请号：US12968704
申请日：2010-12-15
申请人： Umesh Mishra , Srabanti Chowdhury
发明人： Umesh Mishra , Srabanti Chowdhury
IPC分类号： H01L29/66
CPC分类号： H01L29/66462 , H01L29/0649 , H01L29/0657 , H01L29/2003 , H01L29/207 , H01L29/402 , H01L29/407 , H01L29/41766 , H01L29/42372 , H01L29/42376 , H01L29/4238 , H01L29/778 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： A transistor device is described that includes a source, a gate, a drain, a semiconductor material which includes a gate region between the source and the drain, a plurality of channel access regions in the semiconductor material on either side of the gate, a channel in the semiconductor material having an effective width in the gate region and in the channel access regions, and an isolation region in the gate region. The isolation region serves to reduce the effective width of the channel in the gate region without substantially reducing the effective width of the channel in the access regions. Alternatively, the isolation region can be configured to collect holes that are generated in the transistor device. The isolation region may simultaneously achieve both of these functions.
摘要翻译：描述了一种晶体管器件，其包括源极，栅极，漏极，包括源极和漏极之间的栅极区域的半导体材料，栅极两侧的半导体材料中的多个沟道存取区域，沟道在栅极区域和沟道存取区域中具有有效宽度的半导体材料以及栅极区域中的隔离区域。隔离区域用于减小栅极区域中的沟道的有效宽度，而不会明显减小通路区域中的沟道的有效宽度。或者，隔离区可以被配置为收集在晶体管器件中产生的空穴。隔离区可以同时实现这两个功能。

18. 发明申请

US20130320939A1 INDUCTIVE LOAD POWER SWITCHING CIRCUITS 有权
标题翻译：感应负载电源开关电路
公开(公告)号：US20130320939A1
公开(公告)日：2013-12-05
申请号：US13959483
申请日：2013-08-05
申请人： Transphorm Inc.
发明人： James Honea , Yifeng Wu
IPC分类号： G05F1/70
CPC分类号： G05F1/70 , H03K17/08142 , Y10T29/41 , Y10T29/49117
摘要： Power switching circuits including an inductive load and a switching device are described. The switches devices can be either low-side or high-side switches. Some of the switches are transistors that are able to block voltages or prevent substantial current from flowing through the transistor when voltage is applied across the transistor.
摘要翻译：描述了包括电感负载和开关装置的功率开关电路。开关器件可以是低端或高端开关。一些开关是当晶体管上施加电压时能够阻挡电压或防止大量电流流过晶体管的晶体管。

19. 发明授权

US08541818B2 Semiconductor heterostructure diodes 有权
标题翻译：半导体异质结二极管
公开(公告)号：US08541818B2
公开(公告)日：2013-09-24
申请号：US13533339
申请日：2012-06-26
申请人： Yifeng Wu , Umesh Mishra , Primit Parikh , Ilan Ben-Yaacov
发明人： Yifeng Wu , Umesh Mishra , Primit Parikh , Ilan Ben-Yaacov
IPC分类号： H01L33/00 , H01L29/739
CPC分类号： H01L29/0615 , H01L27/0629 , H01L29/2003 , H01L29/205 , H01L29/4236 , H01L29/778 , H01L29/7786 , H01L29/7787 , H01L29/872
摘要： Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2 DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2 DEG, forming an ohmic contact with the layer containing the 2 DEG.
摘要翻译：平面肖特基二极管，其半导体材料包括在至少一个半导体层中诱导2°的异质结。金属阳极触点位于上半导体层的顶部，与该层形成肖特基接触。金属阴极接触器连接到2°，与含有2°的层形成欧姆接触。

20. 发明授权

US08508281B2 Bridge circuits and their components 有权
标题翻译：桥接电路及其组件
公开(公告)号：US08508281B2
公开(公告)日：2013-08-13
申请号：US13164109
申请日：2011-06-20
申请人： James Honea , Yifeng Wu
发明人： James Honea , Yifeng Wu
IPC分类号： H03K17/56
CPC分类号： H03K17/08142 , H03K17/162 , H03K17/223 , H03K17/567 , H03K17/6871
摘要： A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and in a third mode of operation of conducting substantial current in an opposite direction through the channel. The half bridge can have two circuits with such a transistor.
摘要翻译：描述半桥，其中至少一个晶体管具有通道，该通道能够处于在至少一个方向上阻挡实质电压的第一操作模式，在通过通道沿一个方向传导大量电流的第二操作模式中，以及在通过通道在相反方向上传导大量电流的第三操作模式中。半桥可以有两个具有这种晶体管的电路。

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