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21. 发明授权

US09184049B2 Patterned silicon-on-plastic (SOP) technology and methods of manufacturing the same 有权
公开(公告)号：US09184049B2
公开(公告)日：2015-11-10
申请号：US14261029
申请日：2014-04-24
申请人： RF Micro Devices, Inc.
发明人： Michael Carroll , Julio Costa , Daniel Charles Kerr , Don Willis , Elizabeth Glass
IPC分类号： H01L29/02 , H01L21/02 , H01L23/29 , H01L23/36 , H01L23/373 , H01L21/683 , H01L29/786 , H01L29/06 , H01L23/31 , H01L21/56
摘要： A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.

22. 发明授权

US09178627B2 Rugged IQ receiver based RF gain measurements 有权
标题翻译：基于坚固的IQ接收机的RF增益测量
公开(公告)号：US09178627B2
公开(公告)日：2015-11-03
申请号：US14122852
申请日：2012-05-31
申请人： Jean-Frederic Chiron
发明人： Jean-Frederic Chiron
IPC分类号： H03C1/62 , H04B17/00 , H03F3/195 , H03F3/24 , H04B17/11 , H04B1/04
CPC分类号： H04B17/0005 , H03F1/34 , H03F3/195 , H03F3/24 , H03F3/245 , H03F2200/204 , H03F2200/207 , H03F2200/336 , H03F2200/408 , H04B17/11 , H04B2001/0433
摘要： A method and apparatus for measuring a complex gain of a transmit path are disclosed. During a test mode, an IQ to radio frequency modulator modulates a quadrature RF carrier signal using a quadrature test signal. An RF to IQ down-converter down-converts a down-converter RF input signal to provide a quadrature down-converter output signal using the quadrature RF carrier signal. The down-converter RF input signal is based on the quadrature test signal and the gain of the transmit path. A digital frequency converter frequency converts the quadrature down-converter output signal, providing an averaged frequency converter output signal, which is a quadrature direct current signal representative of an amplitude of the quadrature test signal and the gain of the transmit path. Therefore, a measured gain of the transmit path is based on the amplitude of the quadrature test signal and averaged frequency converter output signal.
摘要翻译：公开了一种用于测量发射路径的复增益的方法和装置。在测试模式期间，IQ到射频调制器使用正交测试信号来调制正交RF载波信号。 RF到IQ下变换器对下变频器RF输入信号进行下变频，以使用正交RF载波信号提供正交下变频器输出信号。下变换器RF输入信号基于正交测试信号和发送路径的增益。数字频率转换器频率转换正交下变频器输出信号，提供平均变频器输出信号，其是表示正交测试信号的幅度和发送路径的增益的正交直流电流信号。因此，发射路径的测量增益基于正交测试信号的振幅和平均的变频器输出信号。

23. 发明申请

US20150303976A1 RF FRONT-END CIRCUITRY WITH TRANSISTOR AND MICROELECTROMECHANICAL MULTIPLE THROW SWITCHES 有权
标题翻译：具有晶体管和微电子多功能开关的RF前端电路
公开(公告)号：US20150303976A1
公开(公告)日：2015-10-22
申请号：US14011802
申请日：2013-08-28
申请人： RF Micro Devices, Inc.
发明人： Nadim Khlat , Jonathan Hale Hammond , Marcus Granger-Jones
IPC分类号： H04B1/44
CPC分类号： H04B1/44 , B81B7/02 , H01P1/15
摘要： This disclosure relates generally to radio frequency (RF) front-end circuitry for routing RF signals to and/or from one or more antennas. Exemplary RF front-end circuitry includes a multiple throw solid-state transistor switch (MTSTS) and a multiple throw microelectromechanical switch (MTMEMS). The MTSTS may be configured to selectively couple a first pole port to any one of a first set of throw ports. The MTMEMS is configured to selectively couple a second pole port to any one of a second set of throw ports. The second pole port of the MTMEMS is coupled to a first throw port in the first set of throw ports of the MTSTS. The MTSTS helps prevent hot switching in the MTMEMS since the first throw port of the MTSTS may be decoupled from the second pole port of the MTMEMS before decoupling the second pole port from a selectively coupled throw port of the MTMEMS.
摘要翻译：本公开一般涉及用于将RF信号路由到和/或来自一个或多个天线的射频（RF）前端电路。示例性RF前端电路包括多掷固态晶体管开关（MTSTS）和多掷微机电开关（MTMEMS）。 MTSTS可以被配置为选择性地将第一极端口耦合到第一组投掷端口中的任何一个。 MTMEMS被配置为选择性地将第二极端口耦合到第二组投掷端口中的任何一个。 MTMEMS的第二个极端口连接到MTSTS的第一组丢弃端口中的第一个端口。 MTSTS有助于防止MTMEMS中的热切换，因为在将第二个极端口与MTMEMS的选择性耦合的投掷端口分离之前，MTSTS的第一个端口可以与MTMEMS的第二个极端口分离。

24. 发明授权

US09160283B2 Integrated pulse shaping biasing circuitry 有权
标题翻译：集成脉冲整形偏置电路
公开(公告)号：US09160283B2
公开(公告)日：2015-10-13
申请号：US14049433
申请日：2013-10-09
申请人： RF Micro Devices, Inc.
发明人： Jinsung Choi , Marcelo Jorge Franco
IPC分类号： H01Q11/12 , H03F3/19 , H03F1/02 , H04B1/034
CPC分类号： H03F3/19 , H03F1/0261
摘要： Integrated pulse shaping biasing circuitry for a radio frequency (RF) power amplifier includes a square wave signal generator and an inverted ramp signal generator. The square wave signal generator and the inverted ramp signal generator are coupled in parallel between an input node and current summation circuitry. The square wave signal generator generates a square wave signal. The inverted ramp signal generator generates an inverted ramp signal. The current summation circuitry receives the generated square wave signal and the inverted ramp signal, and combines the signals to generate a pulse shaped biasing signal for an RF power amplifier. The square wave signal generator, the inverted ramp signal generator, and the current summation circuitry are monolithically integrated on a single semiconductor die.
摘要翻译：用于射频（RF）功率放大器的集成脉冲整形偏置电路包括方波信号发生器和反相斜坡信号发生器。方波信号发生器和反相斜坡信号发生器在输入节点和电流求和电路之间并联耦合。方波信号发生器产生方波信号。反相斜坡信号发生器产生反相斜坡信号。电流求和电路接收产生的方波信号和反相斜坡信号，并组合该信号以产生用于RF功率放大器的脉冲形偏置信号。方波信号发生器，反相斜坡信号发生器和电流求和电路单片集成在单个半导体管芯上。

25. 发明授权

US09142620B2 Power device packaging having backmetals couple the plurality of bond pads to the die backside 有权
标题翻译：具有背衬的功率器件封装将多个接合焊盘耦合到模具背面
公开(公告)号：US09142620B2
公开(公告)日：2015-09-22
申请号：US13910202
申请日：2013-06-05
申请人： RF Micro Devices, Inc.
发明人： Andrew P. Ritenour , Paul Partyka
IPC分类号： H01L29/15 , H01L29/66 , H01L21/338 , H01L21/20 , H01L29/20 , H01L21/02 , H01L29/417 , H01L23/36
CPC分类号： H01L29/2003 , H01L21/0254 , H01L23/36 , H01L29/4175 , H01L2224/16 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/00
摘要： The present disclosure provides a power device and power device packaging. Generally, the power device of the present disclosure includes a die backside and a die frontside. A semi-insulating substrate with epitaxial layers disposed thereon is sandwiched between the die backside and the die frontside. Pads on the die frontside are coupled to the die backside with patterned backmetals that are disposed within vias that pass through the semi-insulating substrate and epitaxial layers from the die backside to the die frontside.
摘要翻译：本公开提供了功率器件和功率器件封装。通常，本公开的功率器件包括管芯背面和管芯前端。具有设置在其上的外延层的半绝缘基板夹在模具背面和模具前侧之间。模具前端的垫片与模具背面耦合，图案化的背衬设置在通过半绝缘衬底和外延层从模具背面到模具前端的通孔内。

26. 发明授权

US09130530B2 Gain synchronization circuitry for synchronizing a gain response between output stages in a multi-stage RF power amplifier 有权
标题翻译：增益同步电路，用于在多级RF功率放大器中的输出级之间同步增益响应
公开(公告)号：US09130530B2
公开(公告)日：2015-09-08
申请号：US14043294
申请日：2013-10-01
申请人： RF Micro Devices, Inc.
发明人： Bin Jia , Yuan Wei , William Lam
IPC分类号： H01Q11/12 , H04B1/04 , H03G3/30 , H03F3/72
CPC分类号： H03G3/3042 , H03F3/24 , H03F3/72 , H04B1/0458
摘要： A multi-stage radio frequency (RF) power amplifier includes a high-power amplifier path and a low-power amplifier path. The low-power amplifier path includes gain synchronization circuitry in order to synchronize the gain response of the high-power amplifier path and the low-power amplifier path. By synchronizing the gain response of the high-power amplifier path and the low-power amplifier path, the gain linearity of the multi-stage RF amplifier is improved.
摘要翻译：多级射频（RF）功率放大器包括大功率放大器路径和低功率放大器路径。低功率放大器路径包括增益同步电路，以便使高功率放大器路径和低功率放大器路径的增益响应同步。通过同步高功率放大器路径和低功率放大器路径的增益响应，提高了多级RF放大器的增益线性度。

27. 发明授权

US09129802B2 Lateral semiconductor device with vertical breakdown region 有权
标题翻译：具有垂直击穿区域的侧向半导体器件
公开(公告)号：US09129802B2
公开(公告)日：2015-09-08
申请号：US13973482
申请日：2013-08-22
申请人： RF Micro Devices, Inc.
发明人： Andrew P. Ritenour
IPC分类号： H01L21/00 , H01L27/02 , H01L29/417 , H01L29/778 , H01L29/861 , H01L29/20
CPC分类号： H01L27/0248 , H01L29/2003 , H01L29/4175 , H01L29/41775 , H01L29/778 , H01L29/861
摘要： A lateral semiconductor device having a vertical region for providing a protective avalanche breakdown (PAB) is disclosed. The lateral semiconductor device has a lateral structure that includes a conductive substrate, semi-insulating layer(s) disposed on the conductive substrate, device layer(s) disposed on the semi-insulating layer(s), along with a source electrode and a drain electrode disposed on the device layer(s). The vertical region is separated from the source electrode by a lateral region wherein the vertical region has a relatively lower breakdown voltage level than a relatively higher breakdown voltage level of the lateral region for providing the PAB within the vertical region to prevent a potentially damaging breakdown of the lateral region. The vertical region is structured to be more rugged than the lateral region and thus will not be damaged by a PAB event.
摘要翻译：公开了具有用于提供保护性雪崩击穿（PAB）的垂直区域的横向半导体器件。横向半导体器件具有横向结构，其包括导电衬底，设置在导电衬底上的半绝缘层，设置在半绝缘层上的器件层以及源电极和漏电极设置在器件层上。垂直区域通过横向区域与源极分离，其中垂直区域具有比用于在垂直区域内提供PAB的相对较高的击穿电压电平相对较低的击穿电压电平，以防止潜在的破坏性破坏侧面区域。垂直区域被构造成比横向区域更坚固，因此不会被PAB事件损坏。

28. 发明授权

US09112452B1 High-efficiency power supply for a modulated load 有权
标题翻译：用于调制负载的高效电源
公开(公告)号：US09112452B1
公开(公告)日：2015-08-18
申请号：US12836307
申请日：2010-07-14
申请人： Nadim Khlat
发明人： Nadim Khlat
IPC分类号： H03G3/00 , H03F3/04
CPC分类号： H03F3/04 , H03F1/0227 , H03G3/00
摘要： The present disclosure relates to power supply circuitry that has wide bandwidth and achieves high efficiency by using at least one energy storage element for efficient power transfer between two power supply circuits and to an amplitude modulated load. Specifically, the power supply circuitry may include a first power supply circuit, which may be a switching power supply circuit, a second power supply circuit, which may be a linear power supply circuit and may include the energy storage element, and control circuitry to facilitate efficient power transfer. The control circuitry may select one of multiple operating modes, which may include a first operating mode, during which the first power supply circuit may provide power to the energy storage element, and a second operating mode, during which the second power supply circuit may provide power to the amplitude modulated load from the energy storage element.
摘要翻译：本公开涉及通过使用至少一个能量存储元件在两个电源电路和幅度调制负载之间进行有效功率传输而具有宽带宽并且实现高效率的电源电路。具体地，电源电路可以包括第一电源电路，其可以是开关电源电路，第二电源电路，其可以是线性电源电路，并且可以包括能量存储元件，以及便于控制的电路高效的电力转移。控制电路可以选择多种操作模式中的一种，其可以包括第一操作模式，其中第一电源电路可以向能量存储元件提供电力;以及第二操作模式，在第二操作模式期间，第二电源电路可以提供来自能量存储元件的幅度调制负载的功率。

29. 发明授权

US09024688B2 Dual parallel amplifier based DC-DC converter 有权
标题翻译：基于双路并联放大器的DC-DC转换器
公开(公告)号：US09024688B2
公开(公告)日：2015-05-05
申请号：US13782142
申请日：2013-03-01
申请人： RF Micro Devices, Inc.
发明人： Michael R. Kay , Andrew F. Folkmann , Nadim Khlat , Philippe Gorisse
IPC分类号： H03G3/20 , G05F1/46 , H03F1/02 , H03F3/195 , H03F3/24
CPC分类号： G05F1/46 , H03F1/02 , H03F1/0266 , H03F3/195 , H03F3/24 , H03F2200/432 , H03F2200/555
摘要： A direct current (DC)-DC converter, which includes switching circuitry, a first parallel amplifier, and a second parallel amplifier, is disclosed. The switching circuitry has a switching circuitry output. The first parallel amplifier has a first feedback input and a first parallel amplifier output. The second parallel amplifier has a second feedback input and a second parallel amplifier output. A first inductive element is coupled between the switching circuitry output and the first feedback input. A second inductive element is coupled between the first feedback input and the second feedback input.
摘要翻译：公开了一种直流（DC）-DC转换器，其包括开关电路，第一并联放大器和第二并联放大器。开关电路具有开关电路输出。第一并联放大器具有第一反馈输入和第一并联放大器输出。第二并联放大器具有第二反馈输入和第二并联放大器输出。第一电感元件耦合在开关电路输出和第一反馈输入之间。第二感应元件耦合在第一反馈输入和第二反馈输入之间。

30. 发明授权

US09020452B2 Envelope power supply calibration of a multi-mode radio frequency power amplifier 有权
标题翻译：多模射频功率放大器的信封电源校准
公开(公告)号：US09020452B2
公开(公告)日：2015-04-28
申请号：US14010617
申请日：2013-08-27
申请人： RF Micro Devices, Inc.
发明人： Brian Baxter , Jason Millard , Roman Zbigniew Arkiszewski , Steven Selby
IPC分类号： H04B1/04 , H01Q11/12 , H04B17/00 , H03C1/62 , H03G99/00 , H03G3/30 , H03G3/20 , H04B1/62
CPC分类号： H03G99/00 , H03G3/20 , H03G3/3042 , H04B1/62
摘要： The present disclosure relates to envelope power supply calibration of a multi-mode RF power amplifier (PA) to ensure adequate headroom when operating using one of multiple communications modes. The communications modes may include multiple modulation modes, a half-duplex mode, a full-duplex mode, or any combination thereof. As such, each communications mode may have specific peak-to-average power and linearity requirements for the multi-mode RF PA. As a result, each communications mode may have corresponding envelope power supply headroom requirements. The calibration may include determining a saturation operating constraint based on calibration data obtained during saturated operation of the multi-mode RF PA. During operation of the multi-mode RF PA, the envelope power supply may be restricted to provide a minimum allowable magnitude based on an RF signal level of the multi-mode RF PA, the communications mode, and the saturation operating constraint to provide adequate headroom.
摘要翻译：本公开涉及多模RF功率放大器（PA）的包络电源校准，以在使用多种通信模式中的一种进行操作时确保足够的余量。通信模式可以包括多种调制模式，半双工模式，全双工模式或其任何组合。因此，每个通信模式可以具有针对多模式RF PA的特定的峰均功率和线性要求。因此，每个通信模式可以具有对应的信封电源余量要求。校准可以包括基于在多模式RF PA的饱和操作期间获得的校准数据来确定饱和操作约束。在多模RFPA的操作期间，可以限制包络电源以基于多模式RF PA的RF信号电平，通信模式和饱和操作约束提供最小允许幅度，以提供足够的余量。

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