专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08334566B2 Semiconductor power device having shielding electrode for improving breakdown voltage 有权
标题翻译：具有用于改善击穿电压的屏蔽电极的半导体功率器件
公开(公告)号：US08334566B2
公开(公告)日：2012-12-18
申请号：US12829349
申请日：2010-07-01
申请人： Sung-Shan Tai
发明人： Sung-Shan Tai
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/0865 , H01L29/0878 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/4238 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： The present invention provides a semiconductor power device including a substrate, an epitaxial layer disposed on the substrate and having at least a first trench and a second trench, a gate structure disposed in the first trench, and a termination structure disposed in the second trench. The gate structure includes a gate electrode, a gate dielectric layer disposed on an upper sidewall of the first trench and between the gate electrode and the epitaxial laver, and a shield electrode disposed under the gate electrode. The termination structure includes a termination electrode and a dielectric layer disposed between the termination electrode and a sidewall of the second trench. The termination electrode and the shield electrode are connected to each other. In addition, a body region is disposed in the epitaxial layer, and the second trench is only surrounded by the body region.
摘要翻译：本发明提供了一种半导体功率器件，其包括衬底，设置在衬底上的外延层，并且具有至少第一沟槽和第二沟槽，设置在第一沟槽中的栅极结构以及设置在第二沟槽中的端接结构。栅极结构包括栅电极，设置在第一沟槽的上侧壁上以及栅电极和外延栅之间的栅电介质层，以及设置在栅极下方的屏蔽电极。端接结构包括终端电极和布置在端接电极和第二沟槽的侧壁之间的电介质层。终端电极和屏蔽电极彼此连接。此外，体区域设置在外延层中，并且第二沟槽仅被身体区域包围。

22. 发明授权

US08258555B2 Semiconductor device having extra capacitor structure 有权
标题翻译：具有额外的电容器结构的半导体器件
公开(公告)号：US08258555B2
公开(公告)日：2012-09-04
申请号：US13008908
申请日：2011-01-19
申请人： Wei-Chieh Lin
发明人： Wei-Chieh Lin
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L28/60 , H01L29/41766 , H01L29/66727 , H01L29/66734 , H01L29/7803 , H01L29/7811
摘要： A semiconductor device includes a semiconductor substrate having a conductive type, a source metal layer, a gate metal layer, at least one transistor device, a heavily doped region having the conductive type, a capacitor dielectric layer, a conductive layer. The source metal layer and the gate metal layer are disposed on the semiconductor substrate. The transistor device is disposed in the semiconductor substrate under the source metal layer. The heavily doped region, the capacitor dielectric layer and the conductive layer constitute a capacitor structure, disposed under the gate metal layer, and the capacitor structure is electrically connected between a source and a drain of the transistor device.
摘要翻译：半导体器件包括具有导电类型的半导体衬底，源极金属层，栅极金属层，至少一个晶体管器件，具有导电类型的重掺杂区域，电容器介电层，导电层。源极金属层和栅极金属层设置在半导体衬底上。晶体管器件设置在源极金属层下面的半导体衬底中。重掺杂区域，电容器介电层和导电层构成电容器结构，设置在栅极金属层下方，并且电容器结构电连接在晶体管器件的源极和漏极之间。

23. 发明授权

US08217454B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08217454B2
公开(公告)日：2012-07-10
申请号：US13025176
申请日：2011-02-11
申请人： Wei-Chieh Lin
发明人： Wei-Chieh Lin
IPC分类号： H01L29/66
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/0634 , H01L29/0696 , H01L29/1095
摘要： A semiconductor device includes an epitaxial layer having a first conductive type, and at least one first semiconductor layer and a second semiconductor layer having a second conductive type. The first semiconductor layer is disposed in the epitaxial layer of a peripheral region, and has an arc portion, and a first strip portion and a second strip portion extended from two ends of the arc portion. The first strip portion points to an active device region, and the second strip portion is perpendicular to the first strip portion The second semiconductor layer is disposed in the epitaxial layer of the peripheral region between the active device region and the second strip portion, and the second semiconductor has a sidewall facing and parallel to the first semiconductor layer.
摘要翻译：半导体器件包括具有第一导电类型的外延层和至少一个第一半导体层和具有第二导电类型的第二半导体层。第一半导体层设置在周边区域的外延层中，具有弧形部分，以及从弧形部分的两端延伸的第一条带部分和第二条带部分。第一条带部分指向有源器件区域，第二条带部分垂直于第一条带部分。第二半导体层设置在有源器件区域和第二条带部分之间的外围区域的外延层中，并且第二半导体具有面向并平行于第一半导体层的侧壁。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式