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21. 发明授权

US07768109B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07768109B2
公开(公告)日：2010-08-03
申请号：US12191494
申请日：2008-08-14
申请人： Junichi Nakao
发明人： Junichi Nakao
IPC分类号： H01L23/02
CPC分类号： H01L23/053 , H01L23/24 , H01L25/072 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device 1 has a metallic base substrate 2 for heat-dissipating, a wiring board 3, a MOSFET 4 as a semiconductor element, externally leading terminals 5A, 5B, 5C, a casing 6 formed of a synthetic resin, a fixing resin 7, and a gel-like resin layer 8. On the metallic base substrate 2, the casing 6 is disposed to surround one ends of the externally leading terminals 5A, 5B, 5C and the MOSFET 4. The other ends of the externally leading terminals 5A, 5B, 5C are externally protruded from the casing 6, and terminal body portions 51A, 51B, 51C for coupling them are inserted in through hole portions 61A, 61B, 61c of the casing 6. The terminal body portions 51A, 51B, 51C and the through hole portions 61A, 61B, 61c are fixed with the fixing resin 7, and the gel-like resin layer 8 is formed at the lower part of the casing 6. A space 9 is formed between the gel-like resin layer 8 and the casing 6.
摘要翻译：半导体装置1具有用于散热的金属基底基板2，布线基板3，作为半导体元件的MOSFET4，外部引线端子5A，5B，5C，由合成树脂形成的壳体6，固定树脂7 和凝胶状树脂层8.在金属基底基板2上，壳体6被配置为包围外部前端子5A，5B，5C和MOSFET4的一端。外部引线端子5A的另一端 5B，5C从壳体6外部突出，并且用于联接它们的端子主体部分51A，51B，51C插入到壳体6的通孔部分61A，61B，61c中。端子主体部分51A，51B，51C和通孔部61A，61B，61c用固定树脂7固定，并且在壳体6的下部形成凝胶状树脂层8.在凝胶状树脂层8和外壳6。

22. 发明授权

US07557453B2 Semiconductor device, method of manufacturing a semiconductor device and substrate to be used to manufacture a semiconductor device 失效
标题翻译：半导体装置，半导体装置的制造方法以及用于制造半导体装置的基板
公开(公告)号：US07557453B2
公开(公告)日：2009-07-07
申请号：US11554345
申请日：2006-10-30
申请人： Junichi Nakao
发明人： Junichi Nakao
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L23/49582 , H01L21/4821 , H01L23/49562 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2221/68309 , H01L2224/05599 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2224/49175 , H01L2224/73265 , H01L2224/85399 , H01L2224/85444 , H01L2224/97 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19043 , H01L2224/85 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device comprises a first electrode-lead having a first Au film, a first Ni film, a Cu film, a second Au film and a second Ni film stacked in order, a second electrode-lead having a first Au film, a first Ni film, a Cu film, a second Au film and a second Ni film stacked in order and a semiconductor chip having a first electrode formed on a first surface of the semiconductor chip and a second electrode formed on a second surface of the semiconductor chip, the first electrode being formed on an opposite side of the second electrode. The semiconductor chip mounted on the first electrode-lead, the second electrode facing the first surface of the first electrode-lead. A first connection conductor is connected the first electrode of the semiconductor chip to the first surface of the second electrode-lead. The first electrode-lead, the second electrode-lead and the semiconductor chip are housed in a package. The second surface of the first electrode-lead and the second surface of the second electrode-lead are exposed at a surface of the package.
摘要翻译：半导体器件包括具有第一Au膜，第一Ni膜，Cu膜，第二Au膜和第二Ni膜的第一电极引线，第二电极引线具有第一Au膜，第一Au膜，第一Au膜， Ni膜，Cu膜，第二Au膜和第二Ni膜，以及形成在半导体芯片的第一表面上的具有第一电极的半导体芯片和形成在半导体芯片的第二表面上的第二电极，所述第一电极形成在所述第二电极的相对侧上。安装在第一电极引线上的半导体芯片，第二电极面对第一电极引线的第一表面。第一连接导体将半导体芯片的第一电极连接到第二电极引线的第一表面。第一电极引线，第二电极引线和半导体芯片容纳在封装中。第一电极引线的第二表面和第二电极引线的第二表面暴露在封装的表面。

23. 发明授权

US07269589B2 Database managing method and system having data backup function and associated programs 有权
标题翻译：具有数据备份功能和相关程序的数据库管理方法和系统
公开(公告)号：US07269589B2
公开(公告)日：2007-09-11
申请号：US10414494
申请日：2003-04-16
申请人： Sadayuki Ogata , Junichi Nakao
发明人： Sadayuki Ogata , Junichi Nakao
IPC分类号： G06F17/30
CPC分类号： G06F11/1451 , G06F2201/80 , Y10S707/99931 , Y10S707/99939 , Y10S707/99953
摘要： A backup method is provided for backing up a data base of an additional storage type that added data is not updated and deleted. An attribute of data update refusal, i.e., an attribute of only data reference permission is set to each storage area in which a table is stored. It is judged for each storage area that a file once backed up is not necessary to be backed up again. Data stored in the storage area and backed up as the collective backup or divisional backup is not backed up again. The backup time can therefore be shortened.
摘要翻译：提供了备份方法来备份附加存储类型的数据库，添加的数据不会被更新和删除。将数据更新拒绝的属性，即仅数据参考许可的属性设置到存储表的每个存储区域。对每个存储区域判断一次备份的文件不需要再次备份。存储在存储区域中并作为集中备份或分区备份备份的数据不再备份。因此可以缩短备份时间。

24. 发明申请

US20070102813A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SUBSTRATE TO BE USED TO MANUFACTURE A SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件，制造用于制造半导体器件的半导体器件和衬底的方法
公开(公告)号：US20070102813A1
公开(公告)日：2007-05-10
申请号：US11554345
申请日：2006-10-30
申请人： Junichi Nakao
发明人： Junichi Nakao
IPC分类号： H01L23/48
CPC分类号： H01L23/49582 , H01L21/4821 , H01L23/49562 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2221/68309 , H01L2224/05599 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2224/49175 , H01L2224/73265 , H01L2224/85399 , H01L2224/85444 , H01L2224/97 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19043 , H01L2224/85 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device comprises a first electrode-lead having a first Au film, a first Ni film, a Cu film, a second Au film and a second Ni film stacked in order, a second electrode-lead having a first Au film, a first Ni film, a Cu film, a second Au film and a second Ni film stacked in order and a semiconductor chip having a first electrode formed on a first surface of the semiconductor chip and a second electrode formed on a second surface of the semiconductor chip, the first electrode being formed on an opposite side of the second electrode. The semiconductor chip mounted on the first electrode-lead, the second electrode facing the first surface of the first electrode-lead. A first connection conductor is connected the first electrode of the semiconductor chip to the first surface of the second electrode-lead. The first electrode-lead, the second electrode-lead and the semiconductor chip are housed in a package. The second surface of the first electrode-lead and the second surface of the second electrode-lead are exposed at a surface of the package.
摘要翻译：半导体器件包括具有第一Au膜，第一Ni膜，Cu膜，第二Au膜和第二Ni膜的第一电极引线，第二电极引线具有第一Au膜，第一Au膜，第一Au膜， Ni膜，Cu膜，第二Au膜和第二Ni膜，以及形成在半导体芯片的第一表面上的具有第一电极的半导体芯片和形成在半导体芯片的第二表面上的第二电极，所述第一电极形成在所述第二电极的相对侧上。安装在第一电极引线上的半导体芯片，第二电极面对第一电极引线的第一表面。第一连接导体将半导体芯片的第一电极连接到第二电极引线的第一表面。第一电极引线，第二电极引线和半导体芯片容纳在封装中。第一电极引线的第二表面和第二电极引线的第二表面暴露在封装的表面。

25. 发明授权

US06238771B1 Composite molded product for use as a button for electric devices and method of manufacturing the same 失效
标题翻译：用作电气装置的按钮的复合模制品及其制造方法
公开(公告)号：US06238771B1
公开(公告)日：2001-05-29
申请号：US09428763
申请日：1998-02-25
申请人： Junichi Nakao
发明人： Junichi Nakao
IPC分类号： H01H13705
CPC分类号： B29C45/14754 , B29C45/1671 , B29L2031/46 , H01H3/12 , H01H11/00 , H01H2229/044 , Y10T428/24322 , Y10T428/24339 , Y10T428/24347 , Y10T428/24793 , Y10T428/2839
摘要： A composite molded product has a frame body (1) with a through bore that terminates at openings, and a button portion (2) with a pressing portion (3) extended through the through bore and a flange portion (4) fused to the frame body (1). A silicone resin layer (5, 24) is interposed between the frame body and the flange portion, and surrounds one of the openings. A method of manufacturing a composite molded product by molding a frame body, forming a silicone resin layer on a surface of the frame body, and simultaneously molding a button portion to a predetermined shape while fusion boding areas of the button portion contacting the frame body.
摘要翻译：复合模制产品具有框架体（1），其具有在开口处终止的通孔，以及具有延伸穿过通孔的按压部分（3）的按钮部分（2）和与框架融合的凸缘部分（4）身体（1）。硅树脂层（5,24）插入在框架体和凸缘部之间，并且围绕其中一个开口。一种通过模制框体制造复合模塑制品的方法，在框体的表面上形成硅树脂层，同时将按钮部分模制成预定形状，同时熔化按钮部分接触框体的区域。

26. 发明授权

US5779230A Method of making a composite button of an electrical device 失效
标题翻译：制造电气设备的复合按钮的方法
公开(公告)号：US5779230A
公开(公告)日：1998-07-14
申请号：US659187
申请日：1996-06-06
申请人： Junichi Nakao
发明人： Junichi Nakao
IPC分类号： B29C45/14 , B29C45/16 , B29K101/12 , B29K683/00 , B29L19/00 , H01H3/12 , H01H11/00
CPC分类号： B29C45/14754 , B29C45/1671 , H01H11/00 , B29L2031/46 , H01H2229/044 , H01H3/12 , Y10T428/24322 , Y10T428/24339 , Y10T428/24347 , Y10T428/24793 , Y10T428/2839
摘要： A composite button of an electrical device has a frame body (1) with a through bore that terminates at openings, and a button portion (2) with a pressing portion (3) extended through the through bore and a flange portion (4) fused to the frame body (1). A silicone resin layer (5, 24) is interposed between the frame body and the flange portion, and surrounds one of the openings. A method of manufacturing a composite button of an electrical device by molding a frame body, forming a silicone resin layer on a surface of the frame body, and simultaneously molding a button portion to a predetermined shape while fusion boding areas of the button portion contacting the frame body.
摘要翻译：电气装置的复合按钮具有框架主体（1），其具有终止于开口处的通孔，以及具有延伸穿过通孔的按压部分（3）的按钮部分（2）和熔化的凸缘部分（4）到框体（1）。硅树脂层（5,24）插入在框架体和凸缘部之间，并且围绕其中一个开口。一种制造电气装置的复合按钮的方法，其通过模制框体，在框体的表面上形成硅树脂层，同时将按钮部分成型为预定形状，同时将按钮部分的接触部分框架体。

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