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    • 27. 发明授权
    • Self-aligned void filling for mushroomed plating
    • 自对准空隙填充为蘑菇电镀
    • US06631546B1
    • 2003-10-14
    • US09496070
    • 2000-02-01
    • Thomas Edward DinanRichard HsiaoJohn I. KimAshok LahiriClinton David Snyder
    • Thomas Edward DinanRichard HsiaoJohn I. KimAshok LahiriClinton David Snyder
    • G11R5127
    • C25D5/022G11B5/127G11B5/3163Y10T29/49032Y10T29/49155Y10T29/49156
    • A method of manufacturing includes 2 mushroom plating process starts with an overplated component which includes an enlarged mushroom head having outer portions which overhang a resist layer. The next step in the first process embodiment is a heating step in which the resist layer is hard baked. Thereafter, using a dry etch process, such as a reactive ion etch (RIE) process, the hard baked resist layer is removed in all areas except beneath the overhang of the mushroom head. The area beneath the overhang thereby remains filled with hard baked resist. Thereafter, the device is ultimately encapsulated such that no voids and/or redeposition problems exist under the overhang due to the presence of the hard baked resist. In an alternative process embodiment of the present invention the dry etch process is conducted first upon the resist layer, such that the resist layer is removed in all areas except under the overhang. Thereafter, the device is baked, such that hard baked resist remains beneath the overhang. Ultimately, the device is encapsulated and no voids or redeposition problems exist beneath the overhang due to the presence of the hard baked resist.
    • 一种制造方法包括2个蘑菇电镀工艺,其中包括一个具有外伸部分的扩大的蘑菇头的一个过度的部件,其上覆盖了一个抗蚀剂层。 第一工艺实施例中的下一步骤是其中抗蚀剂层被硬烘烤的加热步骤。 此后,使用诸如反应离子蚀刻(RIE)工艺的干蚀刻工艺,除了在蘑菇头的突出部以外的所有区域中除去硬烘烤抗蚀剂层。 悬挂下方的区域由此保持充满硬烘烤抗蚀剂。 此后,装置最终被封装,使得由于存在硬烘烤抗蚀剂而在悬垂下不存在空隙和/或再沉积问题。 在本发明的替代方法实施方案中,首先在抗蚀剂层上进行干蚀刻工艺,使得除了在悬垂体之外的所有区域中除去抗蚀剂层。 此后,该装置被烘烤,使得硬烘烤抗蚀剂保留在悬垂物的下方。 最终,器件被封装,由于存在硬烘烤的抗蚀剂,悬臂下方不存在空隙或再沉积问题。