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21. 发明授权

US08986466B2 Method for carburizing tantalum member, and tantalum member 有权
标题翻译：钽构件渗碳方法和钽构件
公开(公告)号：US08986466B2
公开(公告)日：2015-03-24
申请号：US13322936
申请日：2010-05-25
申请人： Yoshihisa Abe , Masanari Watanabe , Osamu Tamura
发明人： Yoshihisa Abe , Masanari Watanabe , Osamu Tamura
IPC分类号： C23C8/22 , C21D9/00 , C23C8/64
CPC分类号： C23C8/64
摘要： Provided is a method for carburizing a tantalum member whereby the tantalum member is less deformed by carburization and can be carburized with good flatness of the planar part thereof and in a uniform manner. The method is a method for subjecting a tantalum member 1 made of tantalum or a tantalum alloy and having a planar part 1a to a carburization process for allowing carbon to penetrate the member 1 from the surface toward the inner portion thereof and includes the steps of: setting the tantalum member 1 in a chamber 3 containing a carbon source by supporting the planar part 1a on a plurality of support rods 6 tapered at distal ends 6a thereof; and subjecting the tantalum member 1 to a carburization process by reducing in pressure and heating the interior of the chamber 3 to allow carbon derived from the carbon source to penetrate the tantalum member 1 from the surface thereof.
摘要翻译：提供了一种钽构件的渗碳方法，由此钽构件通过渗碳而变形较小，并且可以以均匀的方式使其平面部分具有良好的平坦度渗碳。该方法是使由钽或钽合金制成的具有平面部分1a的钽构件1经受渗碳处理以使碳从表面向内部渗入构件1的方法包括以下步骤：将钽构件1设置在容纳碳源的室3中，通过将平面部1a支撑在多个在其远端6a处成锥形的支撑杆6上; 并且通过降低压力并对室3的内部进行加热，使钽构件1进行渗碳处理，以使来自碳源的碳从其表面渗入钽构件1。

22. 发明申请

US20130240090A1 METHOD FOR CARBURIZING TANTALUM CONTAINER 有权
标题翻译：用于加载TANTALUM CONTAINER的方法
公开(公告)号：US20130240090A1
公开(公告)日：2013-09-19
申请号：US13990078
申请日：2011-07-06
申请人： Masanari Watanabe , Yoshihisa Abe
发明人： Masanari Watanabe , Yoshihisa Abe
IPC分类号： C23C8/64
CPC分类号： C23C8/64
摘要： Provided is a method for carburizing a tantalum container which can easily control the carburization thicknesses of various portions of the tantalum container and carburize the tantalum container with a uniform thickness. A method for carburizing a tantalum container 1 made of tantalum or a tantalum alloy to allow carbon to penetrate the tantalum container 1 includes the steps of: supporting the tantalum container 1 on a support member 5, 6 provided in a chamber 3 and setting the tantalum container 1 in the chamber 3; and reducing the pressure inside the chamber 3 and heating the interior of the chamber 3, wherein a carbon source is placed in the vicinity of a portion of the tantalum container 1 hard to carburize.
摘要翻译：本发明提供一种能够容易地控制钽容器的各部分的渗碳厚度并以均匀厚度渗碳钽容器的钽容器渗碳的方法。将由钽或钽合金制成的钽容器1渗碳以使碳贯穿钽容器1的方法包括以下步骤：将钽容器1支撑在设置在腔室3中的支撑构件5,6上，并将钽容器1在腔室3中; 并且减小室3内的压力并加热室3的内部，其中将碳源放置在钽容器1的一部分附近难以渗碳。

23. 发明申请

US20100244100A1 Compound semiconductor substrate 有权
标题翻译：化合物半导体衬底
公开(公告)号：US20100244100A1
公开(公告)日：2010-09-30
申请号：US12659927
申请日：2010-03-25
申请人： Hiroshi Oishi , Jun Komiyama , Kenichi Eriguchi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
发明人： Hiroshi Oishi , Jun Komiyama , Kenichi Eriguchi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
IPC分类号： H01L29/20
CPC分类号： C30B29/403 , C23C16/0272 , C23C16/303 , C30B25/183 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L29/7787
摘要： The present invention provides a compound semiconductor substrate, including: a single-crystal silicon substrate having a crystal face with (111) orientation; a first buffer layer which is formed on the single-crystal silicon substrate and is constituted of an AlxGa1-xN single crystal (0
摘要翻译：本发明提供了一种化合物半导体衬底，包括：具有（111）取向的晶面的单晶硅衬底; 第一缓冲层，其形成在单晶硅衬底上并由Al x Ga 1-x N单晶（0

24. 发明授权

US07643159B2 Three-dimensional shape measuring system, and three-dimensional shape measuring method 有权
标题翻译：三维形状测量系统，三维形状测量方法
公开(公告)号：US07643159B2
公开(公告)日：2010-01-05
申请号：US11879686
申请日：2007-07-18
申请人： Shinji Yamamoto , Yoshihisa Abe
发明人： Shinji Yamamoto , Yoshihisa Abe
IPC分类号： G01B11/24
CPC分类号： G01B11/2527 , G06T7/521
摘要： A three-dimensional shape measuring system includes: a light projecting/receiving apparatus which causes a light receiver to receive light reflected on a surface of a measurement object onto a light receiving surface thereof at a predetermined cycle multiple times, while changing a projecting direction of the light; and a measuring apparatus for measuring a three-dimensional shape of the measurement object, utilizing light receiving data. The measuring apparatus includes: a light receiving time setter for setting a light receiving time in each cycle with respect to each of light receiving areas constituting the light receiving surface; a data converter for converting an output value representing the light receiving data obtained in each cycle into an output value standardized with respect to the light receiving time in each cycle, if the light receiving times are different in the cycles; a projection timing acquirer for acquiring a projection timing at which the light receiving amount of each light receiving area is maximum; and a position acquirer for acquiring a position of a measurement point on the surface of the measurement object corresponding to each light receiving area.
摘要翻译：三维形状测量系统包括：光投射/接收装置，其使得光接收器以预定周期多次将测量对象的表面上反射的光接收到其受光面上，同时改变投影方向光; 以及利用光接收数据测量测量对象的三维形状的测量装置。测量装置包括：光接收时间设定器，用于相对于构成光接收表面的每个光接收区域设定每个周期中的光接收时间; 数据转换器，用于将每个周期中获得的光接收数据的输出值转换为相对于每个周期中的光接收时间标准化的输出值，如果光接收时间在周期不同; 投影定时获取器，用于获取每个光接收区域的光接收量最大的投影定时; 以及位置获取器，用于获取与每个光接收区域对应的测量对象表面上的测量点的位置。

25. 发明授权

US07592298B2 Composition for oil-based liquid cleansing 有权
标题翻译：油性液体清洗用组合物
公开(公告)号：US07592298B2
公开(公告)日：2009-09-22
申请号：US11571654
申请日：2005-07-01
申请人： Nobuyuki Takeuchi , Yoshihisa Abe
发明人： Nobuyuki Takeuchi , Yoshihisa Abe
IPC分类号： C11D3/18 , C11D3/20 , A61K8/33 , A61K8/37
CPC分类号： A61Q1/14 , A61K8/37 , A61K8/375 , A61K8/39 , A61Q19/10 , C11D1/667 , C11D3/2093
摘要： This invention provides an oil-based liquid cleansing preparation that does not sag from the hands during use, can easily be applied to a contemplated site, i.e. has excellent usability, exhibits excellent spreadability during cleansing, gives excellent feeling on use which can realize suitable thickness felling, is usable under an environment where the hands and face are in a wetted state, such as a bathroom and a washstand, has a high level of detergency, and is free from residual oil touch after water washing. This composition comprises an ester of a fatty acid with polyglycerin, glycerin esters of a monocarboxylic acid and a dicarboxylic acid, and a monocarboxylic fatty acid ester which is liquid at 25° C. and has a viscosity of 300 to 3000 mPa·s.
摘要翻译：本发明提供一种油性液体清洗剂，其在使用中不会从手中下垂，可以容易地应用于预想的部位，即具有优异的使用性，在清洁过程中展现出优异的铺展性，使得可以实现合适的厚度可以在手和脸部处于湿润状态的环境（例如浴室和盥洗台）中使用，具有高水平的去污力，并且在水洗后没有残留的油接触。该组合物包含脂肪酸与聚甘油的酯，一元羧酸的甘油酯和二羧酸，以及在25℃下为液体，粘度为300〜3000mPa·s的单羧酸脂肪酸酯。

26. 发明授权

US07436525B2 Three-dimensional shape measuring method, three-dimensional shape measuring apparatus, and focus adjusting method 失效
标题翻译：三维形状测量方法，三维形状测量装置和焦点调节方法
公开(公告)号：US07436525B2
公开(公告)日：2008-10-14
申请号：US11810939
申请日：2007-06-07
申请人： Takayuki Mukai , Yoshihisa Abe
发明人： Takayuki Mukai , Yoshihisa Abe
IPC分类号： G01B11/24
CPC分类号： G01B11/2518
摘要： An operation of projecting slit light onto an object to be measured and receiving light reflected thereon, and an operation of acquiring a two-dimensional image concerning the object to be measured are repeated a certain number of times by changing a focal length. An imaging contrast is calculated with respect to each of areas on the two-dimensional images acquired at the different focal lengths. A high contrast area where the imaging contrast exceeds a predetermined threshold value is extracted with respect to each of the two-dimensional images acquired at the different focal lengths. Distance information concerning the respective areas is acquired by performing triangulation with respect to each of the high contrast areas. Position adjustment of measurement dimensions is performed in such a manner that the areas are included in the measurement dimensions having the predetermined measurement depth, based on the distance information.
摘要翻译：通过改变焦距来重复将狭缝光投射到被测量物体上并且接收其上反射的光的操作以及获取关于被测量物体的二维图像的操作一定次数的操作。对于以不同焦距获取的二维图像上的每个区域计算成像对比度。相对于以不同焦距获取的每个二维图像，提取成像对比度超过预定阈值的高对比度区域。通过相对于每个高对比度区域进行三角测量来获取关于各个区域的距离信息。基于距离信息，以这样的方式进行测量尺寸的位置调整，使得区域被包括在具有预定测量深度的测量尺寸中。

27. 发明申请

US20080224268A1 NITRIDE SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE 审中-公开
标题翻译：氮化物半导体单晶衬底
公开(公告)号：US20080224268A1
公开(公告)日：2008-09-18
申请号：US12040020
申请日：2008-02-29
申请人： Yoshihisa Abe , Jun Komiyama , Shunichi Suzuki , Akira Yoshida , Hideo Nakanishi
发明人： Yoshihisa Abe , Jun Komiyama , Shunichi Suzuki , Akira Yoshida , Hideo Nakanishi
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C30B25/02 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02433 , H01L21/02447 , H01L21/02458 , H01L21/02461 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/045 , H01L29/267 , H01L33/007 , H01S2304/04
摘要： To provide a nitride semiconductor single crystal substrate comprising a Si substrate and a nitride semiconductor film which has semi-polar (10-1m) plane (m: natural number) and a thickness of 1 μm or more, the nitride semiconductor single crystal substrate being suitably used for a light-emitting device, the nitride semiconductor single crystal substrate being suitably used for a light-emitting device, this invention provides a nitride semiconductor single crystal substrate comprising a Si substrate having an off-cut angle of 1 to 35° in the direction from the direction, a buffer layer 2a (2b) made of at least one of SiC or BP formed on the Si substrate, a AlN buffer layer formed on the buffer layers, and a nitride semiconductor single crystal film formed on the AlN buffer layer, the nitride semiconductor single crystal film comprising any one of GaN (10-1m), AlN (10-1m), InN (10-1m) or a GaN (10-1m)/and AlN (10-1m) superlattice film.
摘要翻译：为了提供一种氮化物半导体单晶衬底，其包括Si衬底和具有半极性（10-1m）面（m：自然数）和1μm以上的厚度的氮化物半导体膜，氮化物半导体单晶衬底为适合用于发光器件的氮化物半导体单晶衬底适合用于发光器件，本发明提供了一种氮化物半导体单晶衬底，其包括具有1至35°的截止角的Si衬底从<100>方向的<110>方向，由在Si衬底上形成的SiC或BP中的至少一种制成的缓冲层2a（2b），形成在缓冲层上的AlN缓冲层，以及氮化物半导体形成在AlN缓冲层上的单晶膜，包含GaN（10-1m），AlN（10-1m），InN（10-1m）或GaN（10-1m）中的任一种的氮化物半导体单晶膜和/ AlN（10-1m）超晶格膜。

28. 发明申请

US20070232515A1 Composition for Oil-Based Liquid Cleansing 有权
标题翻译：油性液体清洁剂组合物
公开(公告)号：US20070232515A1
公开(公告)日：2007-10-04
申请号：US11571654
申请日：2005-07-01
申请人： Nobuyuki Takeuchi , Yoshihisa Abe
发明人： Nobuyuki Takeuchi , Yoshihisa Abe
IPC分类号： C11D10/00
CPC分类号： A61Q1/14 , A61K8/37 , A61K8/375 , A61K8/39 , A61Q19/10 , C11D1/667 , C11D3/2093
摘要： This invention provides an oil-based liquid cleansing preparation that does not sag from the hands during use, can easily be applied to a contemplated site, i.e. has excellent usability, exhibits excellent spreadability during cleansing, gives excellent feeling on use which can realize suitable thickness felling, is usable under an environment where the hands and face are in a wetted state, such as a bathroom and a washstand, has a high level of detergency, and is free from residual oil touch after water washing. This composition comprises an ester of a fatty acid with polyglycerin, glycerin esters of a monocarboxylic acid and a dicarboxylic acid, and a monocarboxylic fatty acid ester which is liquid at 25° C. and has a viscosity of 300 to 3000 mPa·s.
摘要翻译：本发明提供一种油性液体清洗剂，其在使用中不会从手中下垂，可以容易地应用于预想的部位，即具有优异的使用性，在清洁过程中展现出优异的铺展性，使得可以实现合适的厚度可以在手和脸部处于湿润状态的环境（例如浴室和盥洗台）中使用，具有高水平的去污力，并且在水洗后没有残留的油接触。该组合物包含脂肪酸与聚甘油的酯，一元羧酸的甘油酯和二羧酸，以及在25℃下为液体，粘度为300〜3000mPa·s的单羧酸脂肪酸酯。

29. 发明申请

US20070210304A1 Nitride semiconductor single crystal film 审中-公开
标题翻译：氮化物半导体单晶膜
公开(公告)号：US20070210304A1
公开(公告)日：2007-09-13
申请号：US11714259
申请日：2007-03-06
申请人： Jun Komiyama , Yoshihisa Abe , Shunichi Suzuki , Hideo Nakanishi
发明人： Jun Komiyama , Yoshihisa Abe , Shunichi Suzuki , Hideo Nakanishi
IPC分类号： H01L29/08
CPC分类号： H01L29/267 , C30B25/02 , C30B29/403 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/1608 , H01L29/2003
摘要： The present invention provides a nitride semiconductor single crystal including gallium nitride (GaN) or aluminum nitride (AlN) which are formed as a film to have good crystallinity without forming a 3C—SiC layer on a Si substrate, and which can be used suitably for a light emitting diode, a laser light emitting element, an electronic element that can be operated at a high speed and a high temperature, etc., as well as a high frequency device.A GaN (0001) or AlN (0001) single crystal film, or a super-lattice structure of GaN (0001) and AlN (0001) is formed on a Si (110) substrate via a 2H—AlN buffer layer.
摘要翻译：本发明提供了一种氮化物半导体单晶，其包括氮化镓（GaN）或氮化铝（AlN），其形成为具有良好结晶性而不在Si衬底上形成3C-SiC层的膜，并且可以适用于发光二极管，激光发光元件，可以高速，高温等操作的电子元件以及高频器件。通过2H-AlN缓冲层在Si（110）衬底上形成GaN（0001）或AlN（0001）单晶膜或GaN（0001）和AlN（0001）的超晶格结构。

30. 发明申请

US20060269124A1 Method and apparatus for aligning three-dimensional shape data 有权
标题翻译：用于对准三维形状数据的方法和装置
公开(公告)号：US20060269124A1
公开(公告)日：2006-11-30
申请号：US11439338
申请日：2006-05-23
申请人： Koji Harada , Yoshihisa Abe , Takayuki Mukai
发明人： Koji Harada , Yoshihisa Abe , Takayuki Mukai
IPC分类号： G06K9/00
CPC分类号： G06T7/33
摘要： In a method for aligning three-dimensional shape data obtained by performing a three-dimensional measurement of an object, photogrammetry of the object with a target mark is performed to obtain a three-dimensional position and a normal vector of the target mark by a calculation, and the three-dimensional measurement of the object is performed to obtain a three-dimensional position and a normal vector of the target mark. Then, determined is a correspondence between the three-dimensional position of the target mark obtained by the photogrammetry and the three-dimensional position of the target mark obtained by the three-dimensional measurement, by using the three-dimensional position and the normal vector of the target mark obtained by the photogrammetry and those of the target mark obtained by the three-dimensional measurement, and three-dimensional shape data obtained by the three-dimensional measurement is aligned based on the correspondence between the three-dimensional-positions of the target marks.
摘要翻译：在通过对物体进行三维测量而获得的三维形状数据进行对准的方法中，进行具有目标标记的物体的摄影测量，以通过计算得到目标标记的三维位置和法线矢量，并且执行对象的三维测量以获得目标标记的三维位置和法线向量。然后，通过使用三维位置和法线矢量，确定通过摄影测量法获得的目标标记的三维位置与通过三维测量获得的目标标记的三维位置之间的对应关系通过摄影测量获得的目标标记和通过三维测量获得的目标标记的目标标记和通过三维测量获得的三维形状数据基于目标的三维位置之间的对应关系分数。

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