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21. 发明授权

US09953685B2 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US09953685B2
公开(公告)日：2018-04-24
申请号：US14477863
申请日：2014-09-05
申请人： eMemory Technology Inc.
发明人： Jui-Ming Kuo , Chun-Yuan Lo , Chia-Jung Hsu , Wein-Town Sun
IPC分类号： H01L27/115 , H01L29/51 , G11C5/06 , G11C16/04 , G11C17/16 , G11C17/18 , H01L27/112 , H01L29/423 , H01L29/78 , H01L27/11529 , H01L27/11573 , H01L23/525 , G11C16/10 , G11C16/14 , G11C16/26 , H01L23/528 , H01L27/11524 , H01L29/06 , H01L29/49 , H01L27/11558 , H01L27/11526 , H01L29/93
CPC分类号： G11C5/06 , G11C16/0408 , G11C16/0425 , G11C16/0433 , G11C16/10 , G11C16/14 , G11C16/26 , G11C17/16 , G11C17/18 , H01L23/5252 , H01L23/528 , H01L27/11206 , H01L27/11524 , H01L27/11526 , H01L27/11529 , H01L27/11558 , H01L27/11573 , H01L29/0649 , H01L29/42328 , H01L29/42368 , H01L29/4916 , H01L29/512 , H01L29/7817 , H01L29/7835 , H01L29/93 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a substrate, a memory device, and a select transistor. The memory device is located on the substrate. The select transistor is located on the substrate and electrically connected to the memory device. The select transistor includes a select gate, a first dielectric layer, and a second dielectric layer. The select gate is located on the substrate. The first dielectric layer is adjacent to the second dielectric layer, and located between the select gate and the substrate. The first dielectric layer is closer to the memory device than the second dielectric layer. The thickness of the first dielectric layer is greater than the thickness of the second dielectric layer.

22. 发明授权

US09484094B2 Control method of resistive random-access memory 有权
标题翻译：电阻随机存取存储器的控制方法
公开(公告)号：US09484094B2
公开(公告)日：2016-11-01
申请号：US14872426
申请日：2015-10-01
申请人： eMemory Technology Inc.
发明人： Chia-Jung Hsu , Wein-Town Sun , Chun-Yuan Lo
IPC分类号： G11C13/00
CPC分类号： G11C13/0097 , G11C13/0002 , G11C13/0007 , G11C13/004 , G11C13/0064 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2013/0092
摘要： A control method of a resistive random-access memory is provided. Firstly, an action is performed on the resistive random-access memory, so that the resistive random-access memory has a specified state. Then, an operation period begins. During a first sub-period of the operation period, a first control signal with a first polarity is provided. During a second sub-period of the operation period, a second control signal with a second polarity is provided. During a third sub-period of the operation period, a third control signal with the first polarity is provided. During a fourth sub-period of the operation period, a read signal is provided, so that the resistive random-access memory generates a read current. According to the read current, a controlling circuit verifies whether the resistive random-access memory is in the specified state.
摘要翻译：提供了一种电阻随机存取存储器的控制方法。首先，在电阻随机存取存储器上执行动作，使得电阻随机存取存储器具有指定的状态。然后，操作期开始。在操作周期的第一子周期期间，提供具有第一极性的第一控制信号。在操作周期的第二子周期期间，提供具有第二极性的第二控制信号。在操作周期的第三子周期期间，提供具有第一极性的第三控制信号。在操作周期的第四子周期期间，提供读信号，使得电阻随机存取存储器产生读电流。根据读取电流，控制电路验证电阻随机存取存储器是否处于指定状态。

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