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21. 发明申请

US20210297070A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20210297070A1
公开(公告)日：2021-09-23
申请号：US17204331
申请日：2021-03-17
申请人： ABLIC Inc.
发明人： Tomoki HIKICHI , Kentaro Fukai
IPC分类号： H03K5/24 , H03F3/04 , G01R33/07
摘要： A semiconductor device formed on a semiconductor substrate of a P type includes: a vertical resistor circuit including a resistor of an N type, the resistor forming a current path in a direction perpendicular to a surface of the semiconductor substrate; a Hall element provided on the semiconductor substrate, the Hall element being configured to supply a voltage proportional to a magnetic flux density in the direction perpendicular to the surface of the semiconductor substrate; an amplifier configured to amplify the voltage supplied from the Hall element, and supply the amplified voltage; a current/voltage conversion circuit configured to supply, as a comparison reference voltage, a voltage containing a product of a reference current IREF flowing through the vertical resistor circuit and a resistance value RREF of the vertical resistor circuit; and a comparator configured to receive the voltage supplied from the amplifier and the comparison reference voltage.

22. 发明申请

US20210281224A1 AMPLIFIER 有权
公开(公告)号：US20210281224A1
公开(公告)日：2021-09-09
申请号：US17131661
申请日：2020-12-22
申请人： FUJITSU LIMITED
发明人： Yoichi Kawano
IPC分类号： H03F3/04 , H03F1/56
摘要： An amplifier includes amplifier circuits connected in series between a ground and a power supply, each amplifier circuit includes: a transistor; and a first capacitance, one end of which is connected to a drain of the transistor, a first amplifier circuit connected closest to the power supply includes a load connected between the drain of the transistor and the power supply, each of the amplifier circuits except for the first amplifier circuit includes a load connected between the drain of the transistor of an own amplifier circuit and a source of the transistor of an amplifier circuit adjacent to the own amplifier circuit, each of the amplifier circuits except for an amplifier circuit connected farthest from the power supply includes a second capacitance connected between the source of the transistor and the ground, and the second capacitance has a capacitance value larger than a capacitance value of the first capacitance.

23. 发明授权

US11088658B2 Envelope tracking amplifier apparatus 有权
公开(公告)号：US11088658B2
公开(公告)日：2021-08-10
申请号：US16514339
申请日：2019-07-17
申请人： Qorvo US, Inc.
发明人： Nadim Khlat
IPC分类号： H03F3/04 , H03F1/02 , H03F3/21 , H03F1/32 , H04B1/04 , H02M3/07
摘要： An envelope tracking (ET) amplifier apparatus is provided. In examples discussed herein, the ET amplifier apparatus can be configured to operate in a fifth-generation (5G) standalone (SA) mode and a 5G non-standalone (NSA) mode. In the SA mode, the ET amplifier apparatus can enable a first pair of amplifier circuits to amplifier a 5G signal for concurrent transmission in a 5G band(s). In the NSA mode, the ET amplifier apparatus can enable a second pair of amplifier circuits to amplify a non-5G anchor signal and a 5G signal for concurrent transmission in a non-5G anchor band(s) and a 5G band(s), respectively. As such, the ET circuit may be provided in a communication apparatus (e.g., a 5G-enabled smartphone) to help improve power amplifier linearity and efficiency in both 5G SA and NSA modes.

24. 发明授权

US11085954B2 Control circuit, bias circuit, and control method 有权
公开(公告)号：US11085954B2
公开(公告)日：2021-08-10
申请号：US16685790
申请日：2019-11-15
申请人： SMARTER MICROELECTRONICS (SHANGHAI) CO., LTD.
发明人： Jun Ma , Qiang Su , Jiangtao Yi , Yang Li
IPC分类号： H03F3/04 , G01R19/00 , H03F1/30 , H02M3/156
摘要： A control circuit can be applied to a bias circuit including a first transistor and a second transistor with their gates connected. The first and second transistors are configured to amplify an input reference direct current (DC) current of the bias circuit to obtain a bias DC current. The control circuit includes: a detection circuit configured to compare a first DC voltage with a second DC voltage to obtain a comparison result; the first DC voltage being a drain DC voltage of the first transistor; and the second DC voltage being a drain DC voltage of the second transistor; and an adjustment circuit configured to adjust the first DC voltage and the second DC voltage by using the comparison result, such that the drain DC voltage of the first transistor equals the drain DC voltage of the second transistor when the bias circuit is in operation.

25. 发明授权

US11082009B2 Envelope tracking power amplifier apparatus 有权
公开(公告)号：US11082009B2
公开(公告)日：2021-08-03
申请号：US16589940
申请日：2019-10-01
申请人： Qorvo US, Inc.
发明人： Nadim Khlat
IPC分类号： H03F3/04 , H03F1/02 , H03F3/19 , H03F3/21
摘要： An envelope tracking (ET) power amplifier apparatus is provided. In a non-limiting example, the ET power amplifier apparatus includes a single ET integrated circuit (ETIC) configured to support at least a pair of amplifier circuits for amplifying different radio frequency (RF) signals. One of the amplifier circuits may be configured to amplify a respective RF signal to a higher power and thus will operate based on an ET voltage whenever possible. Another amplifier circuit, on the other hand, may be configured to amplify a respective RF signal to a relatively lower power and thus will only operate based on the ET voltage when the other amplifier circuit is inactive. By employing a single ETIC, it may be possible to reduce footprint of the ET power amplifier apparatus, thus making it possible to fit the ET power amplifier apparatus into a small form factor electronic device, such as a wearable device.

26. 发明授权

US10965264B2 Bias circuit for supplying a bias current to an RF power amplifier 有权
公开(公告)号：US10965264B2
公开(公告)日：2021-03-30
申请号：US16402243
申请日：2019-05-03
申请人： Rafael Microelectronics, Inc.
发明人： Chih-Wen Wu , Po Chang Lin , Chun Hua Tseng
IPC分类号： H03F3/04 , H03G3/30 , H03F3/217 , H03F3/193
摘要： A bias circuit generates a bias current to an RF power amplifier used for transmitting RF signals, and the amount of the bias current supplied to the RF power amplifier can be configured in multiple modes through transistor switches that are controlled by mode control signals, so that the bias current supplied to the RF power amplifier can be adjusted according to the required power level of the transmitting RF signals. In addition, the bias current can be turned off by another transistor switch that is controlled by a power control signal for saving power while the RF power amplifier is not transmitting RF signals.

27. 发明申请

US20210091728A1 POTENTIOSTAT CIRCUIT 有权
公开(公告)号：US20210091728A1
公开(公告)日：2021-03-25
申请号：US16670131
申请日：2019-10-31
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Moez KANOUN
IPC分类号： H03F3/04 , G01N27/49
摘要： A potentiostat circuit for controlling a work electrode voltage and for measuring a work electrode current is disclosed. The disclosed potentiostat circuit implementations have a topology and include elements to provide a plurality of benefits. The plurality of benefits includes an enlarged range of controllable work electrode voltages and bidirectional work electrode current measurements, high immunity from temperatures variations and process mismatch. The disclosed potentiostat circuit implementations can be used in applications requiring accuracy, low power consumption, and small size. The applications can include portable and/or multichannel electrochemical applications.

28. 发明授权

US10948552B2 Magnetometer 有权
公开(公告)号：US10948552B2
公开(公告)日：2021-03-16
申请号：US16476330
申请日：2017-12-15
申请人： Robert Bosch GmbH
发明人： Guido De Sandre
IPC分类号： G01R33/00 , G01R33/02 , H03M1/08 , H03F3/04
摘要： A magnetometer includes a measurement value transducer that supplies a signal to a first amplifier device; a summation element that reduces an output signal range of an output signal of the first amplifier device; a second amplifier device that amplifies an output signal of the summation element; a low-pass filter filtering an output signal of the second amplifier device; an analog-digital converter converting output of the filter into digital form; and a correction element that divides the digital signal by a correction factor that corresponds to the defined gain factor of the second amplifier device and adds a digital correction signal to the quotient to form a resulting signal, where a scope of the correction signal corresponds to the defined attenuation of the output signal of the first amplifier device.

29. 发明授权

US10938354B2 Amplification device 有权
公开(公告)号：US10938354B2
公开(公告)日：2021-03-02
申请号：US16386293
申请日：2019-04-17
申请人： RichWave Technology Corp.
发明人： Jhao-Yi Lin , Chih-Sheng Chen , Ching-Wen Hsu
IPC分类号： H03F3/04 , H03F1/32 , H03F1/52 , H03F3/19 , H03F1/30
摘要： An amplification device includes an amplification circuit and a protection circuit. The amplification circuit includes a transistor having a first terminal for outputting an amplified radio frequency signal, a second terminal, and a control terminal coupled to the input terminal of the amplification circuit for receiving a radio frequency signal to be amplified. The protection circuit has a first terminal coupled to the output terminal or the input terminal of the amplification circuit, and a second terminal. The protection circuit includes a switch and a first voltage clamping unit. The switch unit is turned on or turned off according to a control signal. The first voltage clamping unit is coupled to the switch unit for clamping a voltage at the first terminal of the protection circuit within a predetermined region when the switch unit is turned on.

30. 发明授权

US10916202B2 High voltage sensing circuit, display driver integrated circuit and display apparatus including the same 有权
公开(公告)号：US10916202B2
公开(公告)日：2021-02-09
申请号：US16420688
申请日：2019-05-23
申请人： Samsung Electronics Co., Ltd.
发明人： Kyung-Hoon Lee , Sang-Pil Nam , Sang-Heon Lee , Michael Choi
IPC分类号： G09G3/3275 , G09G3/3266 , G01R19/00 , G09G3/3233 , H03F3/45 , H03F1/34 , H03F3/04
摘要： A high voltage sensing circuit included in a display driver integrated circuit includes a plurality of channels, a plurality of sampling capacitors, an amplifier and a feedback capacitor. The plurality of channels receives a plurality of input voltages. The plurality of sampling capacitors are connected to the plurality of channels, respectively, to simultaneously sample the plurality of input voltages. The amplifier is configured to sequentially receive each of a plurality of sampled input voltages to sequentially generate a respective plurality of sensing voltages. The feedback capacitor is connected between an input terminal and an output terminal of the amplifier, and is shared by the plurality of channels. The amplifier and the feedback capacitor are configured such that each of the plurality of sampled input voltages is sequentially scaled to the respective one of the plurality of sensing voltages by the amplifier and the feedback capacitor.

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