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    • 33. 发明授权
    • De-duplication in flash memory module
    • 闪存模块中的重复数据删除
    • US09343153B2
    • 2016-05-17
    • US14798888
    • 2015-07-14
    • HITACHI, LTD.
    • Atsushi KawamuraJunji Ogawa
    • G06F12/00G11C16/04G06F12/02G06F3/06G06F11/10
    • G11C16/0483G06F3/0608G06F3/0616G06F3/0641G06F3/0679G06F3/0688G06F11/1044G06F11/108G06F12/0246G06F2212/7202G11C16/04
    • Data capacity efficiency is improved by de-duplicating data assigned with a code that is different for each data. A storage apparatus comprising a flash memory control device equipped with one or more flash memory modules, wherein the flash memory module comprises at least one flash memory chip for providing a storage area, and a controller for controlling writing/reading of data including user data and a guarantee code accompanying the user data to and from the storage area provided by the flash memory chip, wherein the controller respectively divides a plurality of the data having the common user data into the user data and the guarantee code, stores one of the user data in an area of a predetermined unit of the storage area, and links and stores each of the guarantee codes accompanying the plurality of user data in an area of a predetermined unit of the storage area.
    • 通过使用与每个数据不同的代码分配的数据进行解除复制来提高数据容量效率。 一种存储装置,包括配备有一个或多个闪速存储器模块的闪速存储器控制装置,其中所述闪速存储器模块包括用于提供存储区域的至少一个闪速存储器芯片,以及用于控制对包括用户数据的数据的写入/读取的控制器, 伴随着闪存芯片所提供的存储区域的用户数据的保证码,其中控制器分别将具有公共用户数据的多个数据划分成用户数据和保证码,存储用户数据之一 在所述存储区域的预定单位的区域中,在所述存储区域的预定单位的区域中链接并存储伴随所述多个用户数据的每个所述保证码。
    • 35. 发明申请
    • NONVOLATILE SEMICONDUCTOR STORAGE SYSTEM
    • 非易失性半导体存储系统
    • US20150106555A1
    • 2015-04-16
    • US14573269
    • 2014-12-17
    • Hitachi, Ltd.
    • ATSUSHI ISHIKAWAKoji SonodaGo UeharaJunji OgawaHideyuki Koseki
    • G06F3/06G06F13/16G06F13/40
    • G06F3/0608G06F3/0626G06F3/0635G06F3/0647G06F3/0658G06F3/0685G06F3/0688G06F12/0246G06F13/16G06F13/1684G06F13/4022
    • A nonvolatile semiconductor storage system has multiple nonvolatile semiconductor storage media, a control circuit having a media interface group (one or more interface devices) coupled to the multiple nonvolatile semiconductor storage media, and multiple switches. The media interface group and the multiple switches are coupled via data buses, and each switch and each of two or more nonvolatile chips are coupled via a data bus. The switch is configured so as to switch a coupling between a data bus coupled to the media interface group and a data bus coupled to any of multiple nonvolatile chips that are coupled to this switch. The control circuit partitions write-target data into multiple data elements, switches a coupling by controlling the multiple switches, and distributively sends the multiple data elements to multiple nonvolatile chips.
    • 非易失性半导体存储系统具有多个非易失性半导体存储介质,具有耦合到多个非易失性半导体存储介质的介质接口组(一个或多个接口器件)和多个开关的控制电路。 介质接口组和多个开关经由数据总线耦合,并且每个开关和两个或更多个非易失性芯片中的每一个经由数据总线耦合。 该开关被配置为切换耦合到媒体接口组的数据总线与耦合到耦合到该开关的多个非易失性芯片中的任何一个的数据总线之间的耦合。 控制电路将写目标数据分成多个数据元,通过控制多个开关切换耦合,并将多个数据元素分配发送到多个非易失性芯片。