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31. 发明授权

US06958753B2 Method and apparatus for reducing three-dimensional shape data 有权
标题翻译：减少三维形状数据的方法和装置
公开(公告)号：US06958753B2
公开(公告)日：2005-10-25
申请号：US09748141
申请日：2000-12-27
申请人： Yoshihisa Abe
发明人： Yoshihisa Abe
IPC分类号： G06T17/20 , G06T15/30
CPC分类号： G06T17/205
摘要： A method and apparatus for reducing three-dimensional shape data, includes calculating estimation values for portions to be deformed by converging two or more vertices of a polygon model, and reducing the number of data for the polygon model by converging two or more vertices of the polygon model when the estimation values are equal to or below the predetermined permissible value. Estimation values for surfaces to be deformed by shrinking edges or surfaces are calculated based on distances between the respective surfaces and all the original vertices involved in the surface deformation. Before each data reduction, the portion having been involved in all the previous data reductions is defined as a reduction prohibition area, and a succeeding data reduction is applied to a portion other than the reduction prohibition area.
摘要翻译：一种用于减少三维形状数据的方法和装置，包括：通过收敛多边形模型的两个或多个顶点来计算要变形的部分的估计值，并且通过收敛多边形模型的两个或多个顶点来减少多边形模型的数据数当估计值等于或低于预定允许值时的多边形模型。基于各个表面之间的距离和表面变形中涉及的所有原始顶点来计算要通过缩小边缘或表面而变形的表面的估计值。在每次减少数据之前，已经将所有先前的数据缩减所涉及的部分定义为减少禁止区域，并且将以后的数据减少应用于减少禁止区域以外的部分。

32. 发明授权

US08216667B2 Tantalum carbide-coated carbon material and production method thereof 有权
标题翻译：碳化钨包覆碳材料及其制备方法
公开(公告)号：US08216667B2
公开(公告)日：2012-07-10
申请号：US10592085
申请日：2006-02-07
申请人： Hirokazu Fujiwara , Norimasa Yamada , Yoshihisa Abe
发明人： Hirokazu Fujiwara , Norimasa Yamada , Yoshihisa Abe
IPC分类号： B32B3/06 , B05D3/02
CPC分类号： C30B29/36 , C04B41/009 , C04B41/5057 , C04B41/52 , C04B41/87 , C04B41/89 , C04B2111/0025 , C04B2111/00405 , C23C16/029 , C23C16/045 , C23C16/06 , C23C16/32 , C23C16/56 , C30B25/02 , Y10T428/249955 , Y10T428/249956 , Y10T428/249961 , Y10T428/249981 , Y10T428/249987 , Y10T428/26 , Y10T428/263 , Y10T428/30 , C04B41/0072 , C04B41/4531 , C04B41/4556 , C04B41/4582 , C04B35/522 , C04B35/52
摘要： This invention provides a tantalum carbide-coated carbon material, which has excellent corrosion resistance to reducing gases and thermal shock resistance at high temperatures, and a process for producing the same. The tantalum carbide-coated carbon material comprises a carbon substrate and a coating film provided on the carbon substrate directly or through an intermediate layer. The coating film is formed of a large number of densely aggregated fine crystals of tantalum carbide. The diffraction line of the (220) plane of tantalum carbide shows the maximum diffraction intensity in an X-ray diffraction pattern of the coating film. More preferably, this diffraction intensity is not less than four times the intensity of a diffraction line showing the second highest diffraction intensity.
摘要翻译：本发明提供一种碳化钽涂覆的碳材料及其制造方法，其具有优异的耐气体性和耐高温耐热冲击性。碳化钽包覆的碳材料包括直接或通过中间层设置在碳衬底上的碳衬底和涂膜。涂膜由大量碳化钽密集聚集的微细晶体形成。碳化钽（220）面的衍射线显示了涂膜的X射线衍射图中的最大衍射强度。更优选地，该衍射强度不小于显示第二高衍射强度的衍射线的强度的四倍。

33. 发明授权

US08212288B2 Compound semiconductor substrate comprising a multilayer buffer layer 有权
标题翻译：化合物半导体衬底包括多层缓冲层
公开(公告)号：US08212288B2
公开(公告)日：2012-07-03
申请号：US12879035
申请日：2010-09-10
申请人： Jun Komiyama , Kenichi Eriguchi , Hiroshi Oishi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
发明人： Jun Komiyama , Kenichi Eriguchi , Hiroshi Oishi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , H01L21/02458 , H01L21/02507
摘要： A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layer 2 in which AlxGa1-xN single crystal layers (0.6≦X≦1.0) 21 containing carbon from 1×1018 atoms/cm3 to 1×1021 atoms/cm3 and AlyGa1-yN single crystal layers (0.1≦y≦0.5) 22 containing carbon from 1×1017 atoms/cm3 to 1×1021 atoms/cm3 are alternately and repeatedly stacked in order, and a nitride active layer 3 provided with an electron transport layer 31 having a carbon concentration of 5×1017 atoms/cm3 or less and an electron supply layer 32 are deposited on a Si single crystal substrate 1 in order. The carbon concentrations of the AlxGa1-xN single crystal layers 21 and that of the AlGa1-yN single crystal layers 22 respectively decrease from the substrate 1 side towards the above-mentioned active layer 3 side. In this way, the compound semiconductor substrate is produced.
摘要翻译：一种禁止产生裂纹或翘曲的化合物半导体衬底，优选用于常闭型高击穿电压器件，其中AlxGa1-xN单晶层（0.6＆amp; NlE; X＆amp; NlE; 1.0 ）含有1×1018原子/ cm 3至1×1021原子/ cm3的碳和含有1×10 17原子/ cm 3至1×1021原子/ cm 3的碳的Al y Ga 1-y N单晶层（0.1＆lt; 1lE; y＆nlE; 0.5）交替重复堆叠，并且在Si单晶衬底1上沉积具有碳浓度为5×10 17原子/ cm 3以下的电子传输层31和电子供给层32的氮化物活性层3 订购。 Al x Ga 1-x N单晶层21和AlGa1-yN单晶层22的碳浓度分别从衬底1侧朝向上述有源层3侧减小。以这种方式制造化合物半导体衬底。

34. 发明授权

US08148753B2 Compound semiconductor substrate having multiple buffer layers 有权
标题翻译：具有多个缓冲层的复合半导体衬底
公开(公告)号：US08148753B2
公开(公告)日：2012-04-03
申请号：US12659927
申请日：2010-03-25
申请人： Hiroshi Oishi , Jun Komiyama , Kenichi Eriguchi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
发明人： Hiroshi Oishi , Jun Komiyama , Kenichi Eriguchi , Yoshihisa Abe , Akira Yoshida , Shunichi Suzuki
IPC分类号： H01L29/739 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/06 , H01L29/22 , H01L33/00 , H01L29/24 , H01L29/732
CPC分类号： C30B29/403 , C23C16/0272 , C23C16/303 , C30B25/183 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L29/7787
摘要： The present invention provides a compound semiconductor substrate, including: a single-crystal silicon substrate having a crystal face with (111) orientation; a first buffer layer which is formed on the single-crystal silicon substrate and is constituted of an AlxGa1-xN single crystal (0
摘要翻译：本发明提供了一种化合物半导体衬底，包括：具有（111）取向的晶面的单晶硅衬底; 第一缓冲层，其形成在单晶硅衬底上并由Al x Ga 1-x N单晶（0

35. 发明申请

US20090201292A1 Three-dimensional processor and method for controlling display of three-dimensional data in the three-dimensional processor 有权
标题翻译：用于三维处理器中三维数据显示的三维处理器和方法
公开(公告)号：US20090201292A1
公开(公告)日：2009-08-13
申请号：US12322963
申请日：2009-02-10
申请人： Yoshihisa Abe , Toshio Kawano
发明人： Yoshihisa Abe , Toshio Kawano
IPC分类号： G06T15/50
CPC分类号： G01B11/25
摘要： A method is provided for controlling display of three-dimensional data in a three-dimensional processor that processes three-dimensional data indicating three-dimensional position coordinates of each point on a surface of an object to be measured, the three-dimensional data being obtained by projecting measurement light onto the object and receiving measurement light reflected from the object. The method includes obtaining reliability data that are an index of reliability of three-dimensional data of said each point, enabling a user to adjust a threshold for defining a range of the reliability, and displaying, on a screen of a display, three-dimensional data corresponding to reliability falling within a range defined by the threshold adjusted by the user with the three-dimensional data displayed distinguishably from different three-dimensional data.
摘要翻译：提供了一种用于控制三维处理器中的三维数据的显示的方法，该三维处理器处理指示待测物体的表面上的每个点的三维位置坐标的三维数据，获得的三维数据通过将测量光投射到物体上并接收从物体反射的测量光。该方法包括获得作为所述每个点的三维数据的可靠性的索引的可靠性数据，使得用户能够调整用于定义可靠性的范围的阈值，并且在显示器的屏幕上显示三维与由用户调整的阈值所限定的范围内的可靠度相对应的数据与由不同的三维数据可区分地显示的三维数据相对应的数据。

36. 发明申请

US20070116663A1 Composition containing polyglycerol/medium-chain fatty acid ester 审中-公开
标题翻译：含有聚甘油/中链脂肪酸酯的组合物
公开(公告)号：US20070116663A1
公开(公告)日：2007-05-24
申请号：US10581285
申请日：2004-11-30
申请人： Tetsuro Iwanaga , Kazuhito Uchida , Nobuyuki Takeuchi , Yoshihisa Abe
发明人： Tetsuro Iwanaga , Kazuhito Uchida , Nobuyuki Takeuchi , Yoshihisa Abe
IPC分类号： A61K8/37
CPC分类号： A61Q19/10 , A61K8/068 , A61K8/86 , A61Q1/14
摘要： An object of the present invention is to provide a polyglycerol medium-chain fatty acid ester-containing composition capable of forming a water-in-oil microemulsion, the microemulsion being capable of solubilizing a large amount of water, and the composition having excellent dispersibility and self-emulsifiability in water, and cosmetics comprising the composition. The present invention relates to a polyglycerol medium-chain fatty acid ester-containing composition comprising a polyglycerol medium-chain fatty acid ester formed by esterification of a medium-chain fatty acid having 6 to 10 carbon atoms and a polyglycerol having an average degree of polymerization of 3 or more and less than 100, and a nonionic surfactant; and cosmetics comprising the polyglycerol medium-chain fatty acid ester-containing composition as defined above.
摘要翻译：本发明的目的是提供一种能够形成油包水微乳液的聚甘油中链脂肪酸酯组合物，该微乳液能够溶解大量的水，并且该组合物具有优异的分散性和水中的自乳化性和包含该组合物的化妆品。本发明涉及一种含有聚甘油中链脂肪酸酯的组合物，其含有通过酯化具有6〜10个碳原子的中链脂肪酸形成的聚甘油中链脂肪酸酯和具有平均聚合度的聚甘油 3以上且小于100，非离子表面活性剂; 以及含有上述聚甘油中链脂肪酸酯组合物的化妆品。

37. 发明申请

US20060138448A1 Compound semiconductor and compound semiconductor device using the same 有权
标题翻译：化合物半导体和使用其的化合物半导体器件
公开(公告)号：US20060138448A1
公开(公告)日：2006-06-29
申请号：US11298490
申请日：2005-12-12
申请人： Jun Komiyama , Yoshihisa Abe , Shunichi Suzuki , Hideo Nakanishi
发明人： Jun Komiyama , Yoshihisa Abe , Shunichi Suzuki , Hideo Nakanishi
IPC分类号： H01L33/00
CPC分类号： H01L29/452 , H01L21/02381 , H01L21/02433 , H01L21/02447 , H01L21/02458 , H01L21/02461 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L29/045 , H01L29/1608 , H01L29/2003 , H01L29/267 , H01L33/007
摘要： A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 μm, a carrier concentration of 1016-1021/cm3, a hexagonal InwGaxAl1-w-xN single crystal buffer layer 4 (0≦w
摘要翻译：背面电极6形成在化合物半导体的Si单晶衬底2的背面，其中厚度为0.05-2μm的n型3C-SiC单晶缓冲层3，载流子浓度为10 ^{16×10 21 / cm 3，六方晶系Al x 厚度为0.01-0.5μm的1-wx N单晶缓冲层4（0 <= w <1,0 <= x <1，w + x <1）和n型六方晶系在Al 3 O 3中，单晶层5（0 <= y <1,0 3 <！ - SIPO - >，并且在六方晶系AlGaN / N单晶层5，以提供化合物导致很少的能量损失并且允许高效率和高的击穿电压的半导体器件。}

38. 发明申请

US20060011941A1 Substrate for growing electro-optical single crystal thin film and method of manufacturing the same 失效
标题翻译：用于生长电光单晶薄膜的基板及其制造方法
公开(公告)号：US20060011941A1
公开(公告)日：2006-01-19
申请号：US11174610
申请日：2005-07-06
申请人： Yoshihisa Abe , Shunichi Suzuki , Hideo Nakanishi , Jun Komiyama
发明人： Yoshihisa Abe , Shunichi Suzuki , Hideo Nakanishi , Jun Komiyama
IPC分类号： H01L31/109
CPC分类号： G02F1/03
摘要： A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4, and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substrate for growing an electro-optical single crystal thin film which can obtain an electro-optical single crystal thin film of BTO single crystal thin film 6 etc. with a large size and a very high quality.
摘要翻译：在Si（001）基板2上形成用于生长用于缓冲Si和BTO之间的晶格失配的两层或多层缓冲层3,4和5的电光单晶薄膜的衬底1，作为用于生长可以获得具有大尺寸和非常高质量的BTO单晶薄膜6等的电光单晶薄膜的电光单晶薄膜的基板。

39. 发明授权

US5012984A Process for production of coal-water mixture 失效
标题翻译：煤水混合物生产工艺
公开(公告)号：US5012984A
公开(公告)日：1991-05-07
申请号：US488557
申请日：1990-03-05
申请人： Hiroshi Ishikawa , Kazuo Koyata , Tetsuo Ono , Takuo Motizuki , Masayuki Sakuta , Show Onodera , Hiroshi Yanagioka , Yoshihisa Abe
发明人： Hiroshi Ishikawa , Kazuo Koyata , Tetsuo Ono , Takuo Motizuki , Masayuki Sakuta , Show Onodera , Hiroshi Yanagioka , Yoshihisa Abe
IPC分类号： B65G53/30 , B01F17/00 , C10L1/32 , C10L10/18
CPC分类号： C10L1/32
摘要： A process for the production of a coal-water mixture, which comprises dry-pulverizing coal under supply of hot air to form pulverized coal in which the proportion of particles having a particle size smaller than 200 .mu.m is at least 90%, in which the proportion of particles having a particle size smaller than 10 .mu.m is 10 to 60%, and making the pulverized coal and the hot air sucked in a mixed-air water jet stream.

40. 发明授权

US08785942B2 Nitride semiconductor substrate and method of manufacturing the same 有权
标题翻译：氮化物半导体衬底及其制造方法
公开(公告)号：US08785942B2
公开(公告)日：2014-07-22
申请号：US13352987
申请日：2012-01-18
申请人： Akira Yoshida , Jun Komiyama , Yoshihisa Abe , Hiroshi Oishi , Kenichi Eriguchi , Shunichi Suzuki
发明人： Akira Yoshida , Jun Komiyama , Yoshihisa Abe , Hiroshi Oishi , Kenichi Eriguchi , Shunichi Suzuki
IPC分类号： H01L29/15
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/7787
摘要： A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse.In a nitride semiconductor substrate 10 having a substrate 1, a buffer layer 2 formed on one principal plane of the substrate 1, an intermediate layer 3 formed on the buffer layer 2, an electron transport layer 4 formed on the intermediate layer 3, and an electron supply layer 5 formed on the electron transport layer 4, the intermediate layer 3 has a thickness of 200 nm to 1500 nm and a carbon concentration of 5×1016 atoms/cm3 to 1×1018 atoms/cm3 and is of AlxGa1-xN (0.05≦x≦0.24), and the electron transport layer 4 has a thickness of 5 nm to 200 nm and is of AlyGa1-yN (0≦y≦0.04).
摘要翻译：提供了适用于常关型高击穿电压装置的氮化物半导体衬底和制造衬底的方法，其允许更高的阈值电压和电流崩溃的改善。在具有衬底1的氮化物半导体衬底10中，形成在衬底1的一个主平面上的缓冲层2，形成在缓冲层2上的中间层3，形成在中间层3上的电子传输层4和形成在电子输送层4上的电子供给层5，中间层3的厚度为200nm〜1500nm，碳浓度为5×1016原子/ cm3〜1×1018原子/ cm3，为AlxGa1-xN（ 0.05＆nlE; x＆lt; L; 0.24），电子传输层4的厚度为5nm〜200nm，为Al y Ga 1-y N（0＆nl E; y＆nlE; 0.04）。

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