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31. 发明授权

US09631981B2 Apparatus and method for measuring thermoelectric device 有权
公开(公告)号：US09631981B2
公开(公告)日：2017-04-25
申请号：US14330621
申请日：2014-07-14
申请人： Electronics and Telecommunications Research Institute
发明人： Dong Suk Jun , Moon Gyu Jang , Won Chul Choi
IPC分类号： G01K17/06 , H01L35/00 , G01K7/08 , G01N25/18
CPC分类号： G01K7/08 , G01N25/18
摘要： Provided is an apparatus for measuring a thermoelectric device. The apparatus includes a high temperature heater controlling a temperature of a first side of a sample, a low temperature heater controlling a temperature of a second side of the sample, a fine control heater controlling the temperature of the first side of the sample by a smaller unit than the high temperature heater, a temperature control and voltage measuring unit controlling the high temperature heater, the low temperature heater, and the fine control heater and measuring voltages of the first and second sides of the sample, and a thermal conductivity measuring unit measuring thermal conductivity of the sample by using a high temperature output voltage generated in the first side of the sample and a low temperature output voltage generated in the second side of the sample.

32. 发明授权

US09564570B2 Thermoelectric module with thermal expansion compensation, method for producing a thermoelectric module and thermoelectric generator 有权
标题翻译：具有热膨胀补偿的热电模块，用于制造热电模块和热电发电机的方法
公开(公告)号：US09564570B2
公开(公告)日：2017-02-07
申请号：US13940664
申请日：2013-07-12
申请人： EMITEC GESELLSCHAFT FUER EMISSIONSTECHNOLOGIE MBH
发明人： Sigrid Limbeck , Rolf Brueck
IPC分类号： H01L35/00 , H01L35/32 , H01L35/34 , F01N5/02
CPC分类号： H01L35/32 , F01N5/025 , H01L35/34
摘要： A thermoelectric module extends in a longitudinal direction and includes an outer tube, an inner tube disposed within the outer tube and an interspace between the tubes. At least one first strip-shaped structure and one second strip-shaped structure are provided. The first strip-shaped structure extends from a first connection on the inner tube and the second strip-shaped structure extends from a second connection on the outer tube in opposite directions in at least one circumferential direction or in the longitudinal direction and at least partly form an overlap at least in the circumferential direction or in the longitudinal direction. At least one pair of semiconductor elements is disposed in the region of the overlap. A method for producing a thermoelectric module and a thermoelectric generator are also provided.
摘要翻译：热电模块沿纵向方向延伸并且包括外管，设置在外管内的内管和管之间的间隙。提供至少一个第一条形结构和一个第二条形结构。第一条形结构从内管上的第一连接件延伸，并且第二条形结构在外管上的第二连接件沿至少一个圆周方向或纵向方向上的相反方向延伸并且至少部分地形成至少在圆周方向或纵向方向上重叠。至少一对半导体元件设置在重叠区域中。还提供了一种用于制造热电模块和热电发电机的方法。

33. 发明授权

US09559281B2 Thermoelectric power module 有权
标题翻译：热电模块
公开(公告)号：US09559281B2
公开(公告)日：2017-01-31
申请号：US13579382
申请日：2011-02-14
申请人： Takeshi Kajihara , Kouichi Ishida , Shinichi Fujimoto , Hiroyuki Mizukami
发明人： Takeshi Kajihara , Kouichi Ishida , Shinichi Fujimoto , Hiroyuki Mizukami
IPC分类号： H01L35/30 , H01L35/28 , H01L35/08 , H01L35/00 , H01L35/32
CPC分类号： H01L35/28 , H01L35/00 , H01L35/08 , H01L35/32
摘要： A thermoelectric power module capable of withstanding a long time use in a high temperature environment where a temperature (Th) of a higher temperature portion exceeds 250° C. The thermoelectric power module includes: a thermoelectric power element; a first diffusion prevention layer consisting of molybdenum (Mo) and disposed on a surface of the thermoelectric power element; a second diffusion prevention layer consisting of an intermetallic compound of nickel-tin (Ni—Sn) and disposed on a surface of the first diffusion prevention layer opposite to the thermoelectric power element side; an electrode; a third diffusion prevention layer consisting of an intermetallic compound of nickel-tin (Ni—Sn) and disposed on a surface of the electrode; a solder layer containing lead (Pb) at not less than 85% and configured to join the second diffusion prevention layer and the third diffusion prevention layer to each other.
摘要翻译：一种热电功率模块，其能够在高温环境的温度（Th）超过250℃的情况下经受长时间使用。所述热电功率模块包括：热电功率元件; 由钼（Mo）组成并设置在所述热电功率元件的表面上的第一扩散防止层; 由镍 - 锡（Ni-Sn）的金属间化合物构成的第二扩散防止层，其设置在与所述热电功率元件侧相反的所述第一扩散防止层的表面上; 电极由镍 - 锡（Ni-Sn）金属间化合物构成并设置在电极表面上的第三扩散防止层; 包含不低于85％的铅（Pb）的焊料层，并被配置为将第二扩散防止层和第三扩散防止层彼此接合。

34. 发明授权

US09461226B2 Thermoelectric material and method of preparing the same 有权
标题翻译：热电材料及其制备方法
公开(公告)号：US09461226B2
公开(公告)日：2016-10-04
申请号：US12953993
申请日：2010-11-24
申请人： Hyun-sik Kim , Kyu-hyoung Lee , Sang-mock Lee , Eun-sung Lee , Xiangshu Li
发明人： Hyun-sik Kim , Kyu-hyoung Lee , Sang-mock Lee , Eun-sung Lee , Xiangshu Li
IPC分类号： H01L35/16 , H01L35/18 , B82Y30/00 , H01L35/26 , H01L35/02 , H01L35/00
CPC分类号： H01L35/16 , B82Y30/00 , H01L35/00 , H01L35/02 , H01L35/18 , H01L35/26
摘要： A thermoelectric material including: a bismuth-tellurium (Bi—Te)-based thermoelectric material matrix; and a nano-metal component distributed in the Bi—Te-based thermoelectric material matrix, wherein a Lotgering degree of orientation in a c-axis direction is about 0.9 to about 1.
摘要翻译：一种热电材料，包括：基于铋 - 碲（Bi-Te）的热电材料基体; 以及分布在所述Bi-Te基热电材料基体中的纳米金属成分，其中c轴方向的取向度为约0.9〜约1。

35. 发明授权

US09450019B2 Power semiconductor device, manufacturing method therefor, and method for operating the power semiconductor device 有权
标题翻译：功率半导体器件及其制造方法以及用于操作功率半导体器件的方法
公开(公告)号：US09450019B2
公开(公告)日：2016-09-20
申请号：US14303654
申请日：2014-06-13
申请人： Infineon Technologies AG
发明人： Christoph Kadow , Marc Strasser
IPC分类号： H01L35/00 , H01L37/00 , H03K3/42 , H03K17/78 , H01L27/16 , H01L21/768 , G01K7/01 , G01K1/02
CPC分类号： H01L27/16 , G01K1/026 , G01K7/01 , G01K2217/00 , H01L21/76895 , H01L29/0653 , H01L29/1083 , H01L29/1095 , H01L29/7393 , H01L29/7826
摘要： A power semiconductor device includes a semiconductor body including a first surface, an edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area including at least one of several transistor structures connected in parallel and several diode structures connected in parallel, and a peripheral area arranged between the active area and the edge. The power semiconductor further device includes a plurality of word lines, a plurality of bit lines separated from the word lines, and a plurality of temperature sensors arranged on or at the first surface, wherein each of the temperature sensors is connected with one of the bit lines and one of the word lines or each of the temperature sensors is formed by a respective portion of one of the bit lines.
摘要翻译：功率半导体器件包括半导体本体，其包括第一表面，在基本上平行于第一表面的水平方向上限定半导体本体的边缘;有源区，包括并联连接的多个晶体管结构中的至少一个，以及连接在平行和布置在有效区域和边缘之间的周边区域。功率半导体另外的器件包括多个字线，与字线分离的多个位线，以及布置在第一表面上或第一表面上的多个温度传感器，其中每个温度传感器与位中的一个连接线和一条字线或每个温度传感器由位线之一的相应部分形成。

36. 发明授权

US09412927B2 Formation of a thermopile sensor utilizing CMOS fabrication techniques 有权
标题翻译：使用CMOS制造技术形成热电堆传感器
公开(公告)号：US09412927B2
公开(公告)日：2016-08-09
申请号：US14573156
申请日：2014-12-17
申请人： Maxim Integrated Products, Inc.
发明人： Arvin Emadi , Stanley Barnett
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , H01L31/0232 , H01L21/00 , G01J5/20 , H01L27/14 , H01L35/00 , H01L35/34 , H01L35/14 , H01L35/04 , G01J5/12 , H01L27/146 , G01J5/08 , H01L35/32
CPC分类号： H01L35/00 , G01J5/0853 , G01J5/12 , H01L27/14649 , H01L35/04 , H01L35/14 , H01L35/325 , H01L35/34
摘要： Techniques are described to form an absorption stack proximate to a thermopile sensor. In one or more implementations, a thermopile sensor is formed proximate to a semiconductor wafer. An absorption stack is formed proximate to the semiconductor wafer and includes a first layer, a second layer, and a third layer. The first layer may be a material having absorption and/or reflective characteristics. The second layer may be a material having wave phase shift characteristic characteristics. The third layer may be a material having a reflective characteristic.
摘要翻译：描述了技术以形成靠近热电堆传感器的吸收堆叠。在一个或多个实施方案中，热电堆传感器形成在半导体晶片附近。在半导体晶片附近形成吸收层，并且包括第一层，第二层和第三层。第一层可以是具有吸收和/或反射特性的材料。第二层可以是具有波相移特性的材料。第三层可以是具有反射特性的材料。

37. 发明授权

US09331707B1 Programmable temperature compensated voltage generator 有权
标题翻译：可编程温度补偿电压发生器
公开(公告)号：US09331707B1
公开(公告)日：2016-05-03
申请号：US14810998
申请日：2015-07-28
申请人： IXYS Corporation
发明人： Eric Blom , Anatoliy Tsyrganovich , James Anderson
IPC分类号： H01L35/00 , H01L37/00 , H03K3/42 , H03K17/78 , H03M1/06 , G05F3/04 , H03M1/66
CPC分类号： G05F3/16 , G05F1/461 , G05F3/04 , H03M1/1047 , H03M1/66
摘要： A programmable temperature compensated voltage reference is disclosed. In an exemplary embodiment, an apparatus includes a digital-to-analog converter (DAC) that uses a reference voltage and a code to generate a DAC output voltage. The apparatus also includes a temperature compensator that uses a temperature measurement (T) and the DAC code to generate a temperature compensation signal. The temperature compensation signal is represented by a third order polynomial equation. The apparatus also includes a signal combiner that combines the DAC output voltage and the temperature compensation signal to generate a temperature compensated programmable reference voltage.
摘要翻译：公开了可编程温度补偿电压基准。在示例性实施例中，装置包括使用参考电压和代码来产生DAC输出电压的数模转换器（DAC）。该装置还包括使用温度测量（T）和DAC代码产生温度补偿信号的温度补偿器。温度补偿信号由三阶多项式方程表示。该装置还包括组合DAC输出电压和温度补偿信号以产生温度补偿可编程参考电压的信号组合器。

38. 发明授权

US09318681B2 Thermogenerator comprising phase-change materials 有权
标题翻译：包含相变材料的热发生器
公开(公告)号：US09318681B2
公开(公告)日：2016-04-19
申请号：US13806392
申请日：2011-06-22
申请人： Jerome Gavillet
发明人： Jerome Gavillet
IPC分类号： H01L35/00 , H01L35/30 , H01L35/28 , H01L35/34 , H01L23/427
CPC分类号： H01L35/28 , F28D20/026 , H01L23/4275 , H01L35/30 , H01L2924/0002 , Y02E60/145 , H01L2924/00
摘要： A thermogenerator including at least one thermoelement and two phase-change materials having different phase-change temperatures, the at least one thermoelement having two opposite main faces, and each of the faces is covered by one of the phase-change materials, such that the thermoelement is subject only to a temperature gradient imposed by the two phase-change materials, during a phase of heating or cooling.
摘要翻译：一种热发生器，其包括具有不同相变温度的至少一个热电偶和两个相变材料，所述至少一个热电偶具有两个相对的主面，并且每个表面被一个相变材料覆盖，使得在加热或冷却阶段，热电偶仅受两种相变材料施加的温度梯度的影响。

39. 发明授权

US09287484B2 Thermoelectric material, thermoelectric element, and module including the same, and preparation method thereof 有权
标题翻译：热电材料，热电元件及其组合物及其制备方法
公开(公告)号：US09287484B2
公开(公告)日：2016-03-15
申请号：US14078794
申请日：2013-11-13
申请人： Samsung Electronics Co., Ltd. , Industry-Academic Cooperation Foundation, Yonsei University
发明人： Jong-wook Roh , Weon-ho Shin , Jung-young Cho , Kyu-hyoung Lee , Un-yong Jeong
IPC分类号： H01L35/00 , H01L35/26 , B82Y30/00 , H01L35/16 , C01B19/00
CPC分类号： H01L35/26 , B82Y30/00 , C01B19/007 , C01P2002/72 , C01P2002/85 , C01P2004/04 , C01P2004/24 , C01P2004/54 , C01P2004/62 , C01P2004/64 , C01P2006/40 , H01L35/16
摘要： A thermoelectric material including: a two dimensional nanostructure having a core and a shell on the core. Also, a thermoelectric element and a thermoelectric apparatus including the thermoelectric material, and a method of preparing the thermoelectric material.
摘要翻译：一种热电材料，包括：在芯上具有芯和壳的二维纳米结构。另外，包括该热电材料的热电元件和热电装置以及该热电材料的制备方法。

40. 发明授权

US09209816B2 Pre-heating for reduced subthreshold leakage 有权
标题翻译：预热减少亚阈值泄漏
公开(公告)号：US09209816B2
公开(公告)日：2015-12-08
申请号：US14041505
申请日：2013-09-30
申请人： Broadcom Corporation
发明人： Paul Penzes , Mark Fullerton
IPC分类号： H01L35/00 , H03L7/08 , H03K3/03 , H03K3/037 , H03K19/01 , G06F12/14 , G06F21/44 , H03K5/13 , H03L7/097 , H03L7/099 , G06F1/32 , G06F1/26 , H03K5/00
CPC分类号： H03L7/0802 , G06F1/26 , G06F1/32 , G06F1/3203 , G06F1/3228 , G06F12/14 , G06F21/44 , H01L2924/0002 , H03K3/0315 , H03K3/037 , H03K3/0375 , H03K5/133 , H03K19/01 , H03K2005/00019 , H03K2005/00026 , H03K2005/00058 , H03L7/097 , H03L7/0997 , H01L2924/00
摘要： Certain semiconductor processes provide for the use of multiple different types of transistors with different threshold voltages in a single IC. It can be shown that in certain ones of these semiconductor processes, the speed at which high threshold transistors can operate at decreases with decreasing temperature. Thus, the overall processing speed of an IC that implements high threshold transistors is often limited by the lowest temperature at which the IC is designed (or guaranteed) to properly function. Embodiments of a system and method that overcome this deficiency by “pre-heating” the IC (or at least portions of the IC that implement the high threshold transistors) such that the IC can operate at a frequency (once pre-heated) higher than what would otherwise be possible for a given, minimum temperature at which the IC is designed (or guaranteed) to properly function at are provided.
摘要翻译：某些半导体工艺提供在单个IC中使用具有不同阈值电压的多种不同类型的晶体管。可以看出，在这些半导体工艺中的某些中，高阈值晶体管可以运行的速度随着温度的降低而降低。因此，实现高阈值晶体管的IC的总体处理速度通常受IC设计（或保证）以适当地起作用的最低温度的限制。通过“预热”IC（或实现高阈值晶体管的IC的至少部分）来克服这种缺陷的系统和方法的实施例，使得IC可以以高于在设计（或保证）设计IC（或保证）的给定最低温度下，将提供适当的功能。

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