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41. 发明授权

US11482931B2 In-rush current protected power converter 有权
公开(公告)号：US11482931B2
公开(公告)日：2022-10-25
申请号：US16783800
申请日：2020-02-06
申请人： pSemi Corporation
发明人： Antony Christopher Routledge
IPC分类号： H02M3/158 , H02H7/12 , H02M1/32
摘要： Circuits and methods for protecting the switches of charge pump-based power converters from damage if a VOUT short circuit event occurs and/or if VIN falls rapidly with respect to VX or VOUT. A general embodiment includes a VX Detection Block coupled to the core block of a power converter. The VX Detection Block is coupled to VX and to a control circuit that disables operations of an associated converter circuit upon detection of large, rapid falls in VX during the dead time between clock phase signals, thereby prevent damaging current spikes. Some embodiments include a VIN Detection Block configured to detect and prevent excessive in-rush current due to rapidly falling values of VIN to the power converter. The VIN Detection Block is coupled to VIN, and to VX or VOUT in some embodiments, and to a control circuit to that disables operation of an associated converter circuit.

42. 发明授权

US11474791B2 Method and apparatus for efficient multiplication to improve performance in computational machines 有权
公开(公告)号：US11474791B2
公开(公告)日：2022-10-18
申请号：US16790614
申请日：2020-02-13
申请人： Chaoyang Semiconductor Jiangyin Technology CO. LTD.
发明人： Regan Myers , Saeid Safavi
IPC分类号： G06F7/70 , G06F7/523 , H03M7/26
摘要： A method and apparatus is disclosed for determining a stochastic binary string (SBS) representing a value based on the value represented in binary two's complement. Several different generators are disclosed for generating SBS strings, each being generated to have particular features that are advantageous under various conditions in which the string is to be multiplied with another SBS string. Several such generators can be presented and selected depending upon the particular values to be converted to SBS representation and the functions to be performed on those values.

43. 发明授权

US11444583B2 Systems and methods for optimizing amplifier operations 有权
公开(公告)号：US11444583B2
公开(公告)日：2022-09-13
申请号：US16737783
申请日：2020-01-08
申请人： pSemi Corporation
发明人： Dan William Nobbe , David Halchin
IPC分类号： H03G3/20 , H03F1/32 , H03F1/30 , H03F3/195 , H03F3/72 , H03F1/02 , H03F3/193 , H03G3/30
摘要： Methods and systems for optimizing amplifier operations are described. The described methods and systems particularly describe a feed-forward control circuit that may also be used as a feed-back control circuit in certain applications. The feed-forward control circuit provides a control signal that may be used to configure an amplifier in a variety of ways.

44. 发明授权

US11431301B2 Wideband amplifier tuning 有权
公开(公告)号：US11431301B2
公开(公告)日：2022-08-30
申请号：US17017456
申请日：2020-09-10
申请人： pSemi Corporation
发明人： Rong Jiang , Khushali Shah
IPC分类号： H03F1/07 , H03F1/56 , H03F3/195
摘要： Circuit and methods using a single low-noise amplifier (LNA) to provide amplification for a wide band of RF frequencies while maintaining high gain and a low noise factor. Embodiments include an amplifier circuit including an input signal path for receiving a wideband RF signal; a switched inductor tuning block coupled to the input signal path and configured to selectively couple one of a plurality of inductances to the input signal path; and an amplifier coupled to the switched inductor tuning block and configured to receive the RF signal after passage through the selected coupled inductance. The switched inductor tuning block includes a plurality of selectable branches, each including an RF input switch; an RF output switch; an inductor coupled between the RF input switch and the RF output switch; and first and second shunt switches coupled between a respective terminal of the inductor and circuit ground.

45. 发明授权

US11418186B2 RF switch with bypass topology 有权
公开(公告)号：US11418186B2
公开(公告)日：2022-08-16
申请号：US17244162
申请日：2021-04-29
申请人： pSemi Corporation
发明人： Ethan Prevost , Michael Conry
IPC分类号： H03K17/16 , H04B1/04 , H03K17/00
摘要： An RF signal switch circuit that allows connection of any of N radio frequency (RF) input terminals to a switch output port, either in a low loss mode, in a bypass mode, or, optionally, in a signal function mode. Embodiments of the invention allow for both a single switch in the series input path to a target circuit while still having the ability to isolate the bypass path from the target circuit. In the low loss and bypass mode, the circuit simultaneously exhibits low input insertion loss (and thus a low noise factor) and high bypass mode isolation.

46. 发明授权

US11387235B2 S-contact for SOI 有权
公开(公告)号：US11387235B2
公开(公告)日：2022-07-12
申请号：US16997619
申请日：2020-08-19
申请人： pSemi Corporation
发明人： Befruz Tasbas , Simon Edward Willard , Alain Duvallet , Sinan Goktepeli
IPC分类号： H01L27/092 , H01L21/84 , H01L27/12 , H01L21/8234 , H01L29/06 , H01L29/45
摘要： Systems, methods, and apparatus for an improved protection from charge injection into layers of a device using resistive structures are described. Such resistive structures, named s-contacts, can be made using simpler fabrication methods and less fabrication steps. In a case of metal-oxide-semiconductor (MOS) field effect transistors (FETs), s-contacts can be made with direct connection, or resistive connection, to all regions of the transistors, including the source region, the drain region and the gate.

47. 发明授权

US11329611B2 Transistor bias adjustment for optimization of third order intercept point in a cascode amplifier 有权
公开(公告)号：US11329611B2
公开(公告)日：2022-05-10
申请号：US16294637
申请日：2019-03-06
申请人： pSemi Corporation
发明人： Rong Jiang , Haopei Deng
IPC分类号： H03F3/04 , H03F1/22 , H03F1/56 , H03G3/30 , H03F3/195 , H03F3/21 , H03F1/32
摘要： Methods and devices for amplifying an input RF signal according to at least two gain-states is described. According to one aspect, a multi gain amplifier circuit including a low noise amplifier having a stack of transistors is used for amplification of the input RF signal. When switching from a low gain-state to a high gain-state, the drain-to-source voltage of the output transistor of the stack is increased to affect region of operation of the output transistor, and thereby reduce non-linearity at the output of the amplifier. When switching from the high gain-state to the low gain-state, the drain-to-source voltage of the input transistor of the stack is increased to affect region of operation of the input transistor, and thereby reduce non-linearity at the output of the amplifier.

48. 发明授权

US11319217B2 Method and apparatus for water purification using continuous hydrothermal oxidation regime 有权
公开(公告)号：US11319217B2
公开(公告)日：2022-05-03
申请号：US16996775
申请日：2020-08-18
申请人： Clean Water Ventures, Inc.
发明人： Roy H. DiBenerdini , Bernard F. Coll
IPC分类号： C02F1/04 , C02F103/10 , C02F1/16 , E21B43/26
摘要： A system and method for cleaning dirty water is disclosed. The systems and methods may include two heat exchangers, including a high temperature/high pressure (HT/HP) heat exchanger that receives superheated steam and hydrogen gas and a low temperature/low pressure (LT/LP) that receives steam at a reduced temperature and pressure. The LT/LP heat exchanger provides first stage heating to dirty water that is input into the system for cleansing. The LT/LP heat exchanger has a first coil and a second coil. The first coil carries the dirty water to be cleaned. The HT/HP heat exchanger provides a second stage of heating to the dirty water that is output from the LT/LP heat exchanger. A first coil of the HT/HP heat exchanger carries the superheated steam and hydrogen gas. A second coil carries the preheated dirty water that is output from the LT/LP heat exchanger.

49. 发明授权

US11276749B2 High density IC capacitor structure 有权
公开(公告)号：US11276749B2
公开(公告)日：2022-03-15
申请号：US16985844
申请日：2020-08-05
申请人： pSemi Corporation
发明人： Abhijeet Paul
IPC分类号： H01L23/52 , H01L49/02 , H01L29/06 , H01L27/12 , H01L21/84 , H01L23/522
摘要： High density integrated circuit (IC) capacitor structures and fabrication methods that increase the capacitive density of integrated capacitors with little or no reduction in Q-factor by using a stacked high-density integrated capacitor structure that includes substrate-contact (“S-contact”) capacitor plates. Embodiments include a plurality of S-contact plates fabricated in electrical connection with a capacitor formed in a metal interconnect layer. Some embodiments include interstitial S-contact plates to provide additional capacitive density. Embodiments may also utilize single-layer transfer (SLT) and double-layer transfer (DLT) techniques to create ICs with high density, high Q-factor capacitors. Such capacitors can be beneficially combined with other structures made possible in SLT and DLT IC structures, such as metal interconnect layer capacitors and inductors, and one or more FETs having a conductive aligned supplemental gate. Embodiments are compatible with fabrication of CMOS SOI transistors, and are particularly suitable for radio frequency and analog applications.

50. 发明授权

US11264981B2 High-speed switch with accelerated switching time 有权
公开(公告)号：US11264981B2
公开(公告)日：2022-03-01
申请号：US17164467
申请日：2021-02-01
申请人： pSemi Corporation
发明人： Chengkai Luo
IPC分类号： H03K17/687 , H03K17/0412 , H03K17/693
摘要： A method and apparatus is disclosed for maintaining a stable power supply to a circuit when activating/deactivating a switch in order to accelerate the switching time of the switch. The gate of a FET is coupled to a switch driver. The switch driver is powered by a positive power supply and a negative power supply. When the switch is to be activated/deactivated, the gate is first coupled to a reference potential (i.e., ground) for a “reset period” to reduce any positive/negative charge that has been accumulated in the FET. At the end of the reset period, the gate is then released from the reference potential and the switch driver drives the gate to the desired voltage level to either activate or deactivate the switch.

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