会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 44. 发明授权
    • Fabrication method of GaN power LEDs with electrodes formed by composite optical coatings
    • 具有由复合光学涂层形成的电极的GaN功率LED的制造方法
    • US07704764B2
    • 2010-04-27
    • US12110428
    • 2008-04-28
    • Jinmin LiXiaodong WangGuohong WangLiangchen WangFuhua Yang
    • Jinmin LiXiaodong WangGuohong WangLiangchen WangFuhua Yang
    • H01L21/00
    • H01L33/405H01L33/42H01L33/46
    • Fabrication method of GaN power LED with electrodes formed by composite optical coatings, comprising epitaxially growing N—GaN, active, and P—GaN layers successively on a substrate; depositing a mask layer thereon; coating the mask layer with photoresist; etching the mask layer into an N—GaN electrode pattern; etching through that electrode pattern to form an N—GaN electrode region; removing the mask layer and cleaning; forming a transparent, electrically conductive film simultaneously on the P—GaN and N—GaN layers; forming P—GaN and N—GaN transparent, electrically conductive electrodes by lift-off; forming bonding pad pattern for the P—GaN and N—GaN electrodes by photolithography process; simultaneously forming thereon bonding pad regions for the P—GaN and N—GaN electrodes by stepped electron beam evaporation; forming an antireflection film pattern by photolithography process; forming an antireflection film; thinning and polishing the backside of the substrate, then forming a reflector thereon; and completing the process after scribing, packaging and testing.
    • 具有通过复合光学涂层形成的电极的GaN功率LED的制造方法,包括在衬底上连续地外延生长N-GaN,有源和P-GaN层; 在其上沉积掩模层; 用光刻胶涂覆掩模层; 将掩模层蚀刻成N-GaN电极图案; 蚀刻该电极图案以形成N-GaN电极区域; 去除掩模层并进行清洗; 在P-GaN和N-GaN层上同时形成透明导电膜; 通过剥离形成P-GaN和N-GaN透明导电电极; 通过光刻工艺形成用于P-GaN和N-GaN电极的焊盘图案; 同时通过阶梯式电子束蒸发在其上形成用于P-GaN和N-GaN电极的焊盘区域; 通过光刻工艺形成抗反射膜图案; 形成抗反射膜; 对衬底的背面进行稀疏和抛光,然后在其上形成反射器; 并在划线,包装和测试后完成该过程。