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41. 发明授权

US07225066B2 Support system for a vehicular ECU control measurement system 失效
标题翻译：车载ECU控制测量系统支持系统
公开(公告)号：US07225066B2
公开(公告)日：2007-05-29
申请号：US10282005
申请日：2002-10-29
申请人： Takeshi Yasuda
发明人： Takeshi Yasuda
IPC分类号： G06F19/00 , G06F11/30 , G06F9/445
CPC分类号： H04L29/06 , H04L67/20 , H04L67/22
摘要： A support system comprises a support center 21 and a control measurement system 31 to be supported, which are connected via a computer network 28. The control measurement system 31 comprises means for collecting information which is available for support and when a predetermined condition holds, transmitting the collected information to the support center 21. The support center 21 comprises means for receiving the information transmitted from the control measurement system 31 and storing the received information. The information transmitted from the control measurement system 31 contains information concerning user's setting for the control measurement system 31.
摘要翻译：支持系统包括支持中心21和要被支持的控制测量系统31，其通过计算机网络28连接。控制测量系统31包括用于收集可用于支持的信息的装置，并且当预定条件成立时，将收集的信息发送到支持中心21。支持中心21包括用于接收从控制测量系统31发送的信息并存储接收的信息的装置。从控制测量系统31发送的信息包含关于控制测量系统31的用户设置的信息。

42. 发明申请

US20060057780A1 Manufacturing apparatus of semiconductor devices, and method of manufacturing semiconductor devices 审中-公开
标题翻译：半导体装置的制造装置以及半导体装置的制造方法
公开(公告)号：US20060057780A1
公开(公告)日：2006-03-16
申请号：US11212355
申请日：2005-08-26
申请人： Shigehisa Tajimi , Takeshi Yasuda
发明人： Shigehisa Tajimi , Takeshi Yasuda
IPC分类号： H01L21/58
CPC分类号： H01L24/81 , H01L24/75 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/1134 , H01L2224/13144 , H01L2224/16 , H01L2224/75 , H01L2224/75251 , H01L2224/75252 , H01L2224/75743 , H01L2224/81203 , H01L2224/81208 , H01L2224/81801 , H01L2224/83192 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A method for manufacturing semiconductor devices, comprises: mounting a substrate on a bonding stage; pressing the substrate to the bonding stage by blowing a compressed air from the upper face side of the substrate; causing the bonding stage to adsorb the substrate by exhausting air from the lower face side of the substrate, and bonding a semiconductor chip to the substrate.
摘要翻译：一种半导体器件的制造方法，包括：将基板安装在接合台上; 通过从基板的上表面侧吹送压缩空气将基板按压到接合台; 使得结合阶段通过从衬底的下表面侧排出空气并将半导体芯片接合到衬底来吸附衬底。

43. 发明授权

US06330526B1 Characteristic variation evaluation method of semiconductor device 失效
标题翻译：半导体器件的特征变化评估方法
公开(公告)号：US06330526B1
公开(公告)日：2001-12-11
申请号：US09266915
申请日：1999-03-12
申请人： Takeshi Yasuda
发明人： Takeshi Yasuda
IPC分类号： G06F760
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Specific parameters used for calculation of a worst-case parameter can be readily selected. Parameters not suitable for characteristic-value expression are eliminated from principal parameters (step ST31), and model equations are extracted (step ST32). Then, parameter values extracted from the same chip are inserted into the model equations to calculate the characteristic value (step ST32). A correlation coefficient between the calculated and measured characteristic values are obtained (step ST33) to select specific parameters (step ST34).
摘要翻译：可以容易地选择用于计算最坏情况参数的具体参数。从主要参数中消除不适合特征值表达的参数（步骤ST31），并提取模型方程（步骤ST32）。然后，将从同一芯片提取的参数值插入到模型方程式中以计算特征值（步骤ST32）。获得计算出的和测量的特征值之间的相关系数（步骤ST33）以选择具体参数（步骤ST34）。

44. 发明授权

US06131109A Multitask processor, a multitask processing method, a multitask processing display method and a storage medium for processing by correlating task and object 失效
标题翻译：多任务处理器，多任务处理方法，多任务处理显示方法和用于通过关联任务和对象进行处理的存储介质
公开(公告)号：US06131109A
公开(公告)日：2000-10-10
申请号：US28639
申请日：1998-02-24
申请人： Katsuhiko Ueki , Masato Igarashi , Takeshi Yasuda , Noriaki Koyama , Masaaki Okajima , Ikuya Odahara
发明人： Katsuhiko Ueki , Masato Igarashi , Takeshi Yasuda , Noriaki Koyama , Masaaki Okajima , Ikuya Odahara
IPC分类号： G06F9/46 , G06F9/48 , G06F11/28 , G06F11/32 , G06F11/34 , G06F11/36 , G08F9/00
CPC分类号： G06F11/3664 , G06F11/323 , G06F11/3476 , G06F11/3636
摘要： The debug assisting apparatus comprises a task information recording device to record the execution information of task A, task B, and task C executed by the OS 1 in multitask processing, an object execution information recording device to record the information of the objects operated by the tasks, an information merging device both to chronologically merge the recorded object execution information and execution information of task A, task B, and task C and to store such information as the program operation history in a history storing device, and an output data generating device to generate the output data showing the execution progress of task A, task B, and task C and the operation of the objects in association according to the operation history table in the history storing device and output such data to the input/output device (monitor).
摘要翻译：调试辅助装置包括任务信息记录装置，用于在多任务处理中记录由OS 1执行的任务A，任务B和任务C的执行信息，对象执行信息记录装置，用于记录由任务，信息合并装置，以按时间顺序合并记录对象执行信息和任务A，任务B和任务C的执行信息，并将诸如程序操作历史的信息存储在历史存储装置中，以及输出数据生成装置根据历史存储装置中的运行历史表生成显示任务A，任务B和任务C的执行进度的输出数据和关联对象的操作，并将该数据输出到输入/输出装置（监视器）。

45. 发明授权

US4698273A Multi-layered ferromagnetic film and method of manufacturing the same 失效
标题翻译：多层铁磁膜及其制造方法
公开(公告)号：US4698273A
公开(公告)日：1987-10-06
申请号：US918333
申请日：1986-10-14
申请人： Matahiro Komuro , Yuzo Kozono , Takeshi Yasuda , Shinji Narishige , Masanobu Hanazono , Tetsuro Kuroda
发明人： Matahiro Komuro , Yuzo Kozono , Takeshi Yasuda , Shinji Narishige , Masanobu Hanazono , Tetsuro Kuroda
IPC分类号： H01F10/10 , B32B15/01 , C23C14/06 , F16L39/00 , G11B5/66 , H01F10/18 , H01F10/30 , H01F10/32 , H01F41/14 , H01F41/18 , C23C14/14
CPC分类号： B82Y25/00 , B32B15/01 , F16L39/00 , G11B5/66 , H01F10/18 , H01F10/32 , Y10S428/928 , Y10T428/12632 , Y10T428/12958
摘要： The film is composed of an alternate lamination of unit iron layers and unit layers of ferromagnetic iron compound such as Fe.sub.3 Al, Fe.sub.3 Si, Fe.sub.3 Ge and Fe.sub.3 Ga. The thickness of the both unit layers is less than 70 .ANG.. The film has a high saturation magnetization more than 230 emu/g and a high thermal stability so that the film is particularly applicable to a magnetic head core.
摘要翻译：该膜由铁铁层和Fe3Al，Fe3Si，Fe3Ge和Fe3Ga等铁磁性铁化合物的单位层的交替叠层构成。两个单元层的厚度小于70安培。该膜具有高于230emu / g的高饱和磁化强度和高热稳定性，因此该膜特别适用于磁头芯。

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