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41. 发明授权

US11587970B2 Imaging device, manufacturing method, and substrate dividing method 有权
公开(公告)号：US11587970B2
公开(公告)日：2023-02-21
申请号：US16815842
申请日：2020-03-11
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Masanari Yamaguchi , Taizo Takachi , Shunsuke Furuse , Takashi Oinoue , Yuki Ikebe
IPC分类号： H01L27/146
摘要： There is provided semiconductor devices and methods of forming the same, including: a first substrate; and a second substrate adjacent to the first substrate, where a side wall of the second substrate includes one or more diced portions that can include a blade diced portion and a stealth diced portion; and also imaging devices and methods of forming the same, including: a first substrate; a transparent layer; an adhesive layer between the first substrate and the transparent layer; a second substrate, where the first substrate is disposed between the adhesive layer and the second substrate; and a groove extending from the adhesive layer to the second substrate, where the groove is filled with the adhesive layer.

42. 发明授权

US11587968B2 Solid-state imaging device and electronic apparatus 有权
公开(公告)号：US11587968B2
公开(公告)日：2023-02-21
申请号：US16758553
申请日：2018-10-26
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Masashi Ohura , Shin Iwabuchi , Atsushi Okuyama
IPC分类号： H01L27/30 , H01L27/146
摘要： The present technology relates to a solid-state imaging device capable of suppressing deterioration in dark characteristics, and an electronic apparatus. The device includes a photoelectric conversion section; a trench between the photoelectric conversion sections in adjacent pixels; and a PN junction region on a sidewall of the trench and including a P-type region and an N-type region, the P-type region having a protruding region. The device can include an inorganic photoelectric conversion section having a pn junction and an organic photoelectric conversion section having an organic photoelectric conversion film that are stacked in a depth direction within a same pixel; and a PN junction region on a sidewall of the inorganic photoelectric conversion section. The PN junction region can further include a first P-type region and an N-type region; and a second P-type region. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.

43. 发明授权

US11585904B2 Distance measurement device and mobile apparatus 有权
公开(公告)号：US11585904B2
公开(公告)日：2023-02-21
申请号：US16610299
申请日：2018-05-08
申请人： Sony Semiconductor Solutions Corporation
发明人： Hideshi Abe
IPC分类号： G01S17/08 , G01S7/48 , G01S7/481 , G01S7/4863 , G01S7/4865 , G01S17/89
摘要： A distance measurement device according to the present disclosure includes: a laser irradiation unit that irradiates a measurement target with laser light; and a laser light receiving unit including a light receiving element that receives the laser light reflected by the measurement target on a pixel-by-pixel basis. Furthermore, the pitch of the unit pixels of the light receiving element varies with location in a light receiving pixel area. A mobile apparatus according to the present disclosure is equipped with a distance measurement device having the above configuration.

44. 发明申请

US20230053000A1 SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE 有权
公开(公告)号：US20230053000A1
公开(公告)日：2023-02-16
申请号：US17759108
申请日：2021-01-21
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： KENICHI MURATA , MASAHIRO JOEI , YUTA NAKAMURA
IPC分类号： H01L27/146 , H01L27/148 , H04N5/369
摘要： A solid-state imaging element (100) includes a first photoelectric conversion unit and a second photoelectric conversion unit (600). The first and second photoelectric conversion units (500, 600) are joined at joint surfaces facing each other, and include an upper electrode (502, 602), a lower electrode (508A, 608), a photoelectric conversion film (504, 604), and a storage electrode (510, 610). The lower electrode (508A) of the first photoelectric conversion unit (500) is connected to a charge storage unit (314) via a first through electrode (460A, 460B) penetrating a semiconductor substrate (300). The lower electrode (608) of the second photoelectric conversion unit (600) is connected to the charge storage unit (314) via: a second electrode (673) provided on a joint surface of the second photoelectric conversion unit (600); a first electrode (573) provided on a joint surface of the first photoelectric conversion unit (500); a second through electrode (560) penetrating the first photoelectric conversion unit (500); and the first through electrode (460A, 460B).

45. 发明申请

US20230052637A1 SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE 有权
公开(公告)号：US20230052637A1
公开(公告)日：2023-02-16
申请号：US17759146
申请日：2021-01-20
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： YORITO SAKANO
IPC分类号： H04N5/235 , H04N5/372
摘要： A solid-state imaging device according to an embodiment includes a photoelectric conversion unit, a charge transfer unit configured to transfer a charge accumulated in the photoelectric conversion unit, a first charge modulation unit to which the charge is transferred from the photoelectric conversion unit by the charge transfer unit, a second charge modulation unit, a charge accumulation unit configured to accumulate a charge overflowing from the photoelectric conversion unit during an accumulation period, a modulation switching unit configured to couple or divide the first charge modulation unit and the second charge modulation unit, and a capacitance connection unit configured to couple or divide the second charge modulation unit and the charge accumulation unit, in which, in a state of the first charge modulation unit alone and a state where the first charge modulation unit and the second charge modulation unit are coupled by the modulation switching unit, the charge accumulated in the photoelectric conversion unit is modulated into a voltage signal, and voltage signals having different conversion efficiencies are continuously read, and the charge accumulated in the photoelectric conversion unit and the charge overflowing from the photoelectric conversion unit during the accumulation period are modulated into a voltage signal and the voltage signal is read in a capacitance obtained by coupling the first charge modulation unit, the second charge modulation unit, and the charge accumulation unit.

46. 发明申请

US20230052364A1 SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS 有权
公开(公告)号：US20230052364A1
公开(公告)日：2023-02-16
申请号：US17794034
申请日：2021-01-22
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Yuki NODA , Yusuke MURAKAWA , Takuya HANADA , Makoto NAKAMURA , Koya TSUCHIMOTO , Shin KITANO
IPC分类号： H01L27/146 , H05K1/18
摘要： A solid-state imaging device according to the present disclosure includes a light-receiving substrate, a circuit board, and a plurality of first connections. The light-receiving substrate includes a plurality of light-receiving circuits provided with photoelectric conversion elements. The circuit board is directly bonded to the light-receiving substrate and includes a plurality of address event detection circuits that detects individual changes in voltages output from the photoelectric conversion elements of the plurality of light-receiving circuits. The plurality of first connections is provided at a joint between the light-receiving substrate and the circuit board to electrically connect the light-receiving circuits and the address event detection circuits corresponding to each other.

47. 发明申请

US20230050259A1 SOLID-STATE IMAGING DEVICE, ELECTRONIC APPARATUS, AND IMAGING SYSTEM 有权
公开(公告)号：US20230050259A1
公开(公告)日：2023-02-16
申请号：US17794036
申请日：2020-05-01
申请人： Sony Semiconductor Solutions Corporation
发明人： Tomokazu Hibino
IPC分类号： G06V10/82 , H04N5/3745 , G06V10/94 , G06V10/774
摘要： To improve the accuracy of the recognition processing used in an image sensor. A solid-state imaging device includes a pixel array, a converter, an image processing unit, a digital signal processing unit, and a control unit. The pixel array has a plurality of pixels that perform photoelectric conversion. The converter converts an analog pixel signal output from the pixel array into digital image data. The image processing unit performs image processing on the digital image data. The digital signal processing unit performs recognition processing on the digital image data output by the image processing unit. The control unit performs optimization regarding at least one acquisition processing operation among acquisition of the analog pixel signal, acquisition of the digital image data, and acquisition of a result of the recognition processing based on the result of the recognition processing.

48. 发明申请

US20230049306A1 LIGHT RECEIVING ELEMENT, IMAGING ELEMENT, AND IMAGING DEVICE 有权
公开(公告)号：US20230049306A1
公开(公告)日：2023-02-16
申请号：US17758580
申请日：2021-01-13
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： TSUTOMU IMOTO
IPC分类号： H01L27/146
摘要： A light receiving element according to the present disclosure includes a sensor substrate (102) and a circuit board (101). The sensor substrate (102) is provided with a light receiving region (103), a pair of voltage application electrodes, and an incident surface electrode (104). The light receiving region (103) photoelectrically converts incident light into signal charges. A voltage is alternately applied to the pair of voltage application electrodes to generate, in the light receiving region (103), an electric field that time-divides the signal charges and distributes the signal charges to a pair of charge accumulation electrodes. The incident surface electrode (104) is provided on an incident surface of light in the light receiving region (103), and a voltage equal to or lower than a ground potential is applied to the incident surface electrode. The circuit board (101) is provided on a surface facing the incident surface of the light, of the sensor substrate (102). The circuit board (101) is provided with a pixel transistor that processes the signal charges accumulated in the charge accumulation electrodes.

49. 发明申请

US20230049028A1 SUBSTRATE AND SEMICONDUCTOR PACKAGE 有权
公开(公告)号：US20230049028A1
公开(公告)日：2023-02-16
申请号：US17759344
申请日：2020-12-09
申请人： SONY GROUP CORPORATION , SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： HIROHITO MIYAZAKI , YUJI NISHIDA , CHRISTOPHER WRIGHT , BERNADETTE ELLIOTT-BOWMAN , TIMOTHY BEARD
IPC分类号： H01L23/00 , G01R31/28
摘要： Damage to a joint part of a terminal of an electronic component mounted on a substrate is detected. The substrate includes a base material unit, a land, and a light detection unit. The land included in the substrate is arranged with a stress light emitting body configured to emit light in accordance with stress, includes a transparent member, and is joined with a terminal of an element arranged in the base material unit included in the substrate. The light detection unit included in the substrate is arranged between the base material unit and the land included in the substrate, and detects light from the stress light emitting body.

50. 发明申请

US20230048675A1 LIGHT-EMITTING APPARATUS 有权
公开(公告)号：US20230048675A1
公开(公告)日：2023-02-16
申请号：US17792016
申请日：2020-12-10
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Takashi SAKAIRI , Atsushi YAMAMOTO , Kensaku MAEDA
IPC分类号： G02F1/29 , G01S17/89 , G01S17/10
摘要： To provide a light-emitting apparatus capable of suitably controlling light emitted from a light-emitting element. A light-emitting apparatus according to the present disclosure includes: a substrate; a plurality of light-emitting elements which are provided on a side of a first surface of the substrate; and an optical element which is provided on a side of a second surface of the substrate and into which light emitted from the plurality of light-emitting elements is incident, wherein the optical element includes a liquid crystal layer which is configured to function as a lens.

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