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51. 发明授权

US06232714B1 Saturated full color stacked organic light emitting devices 有权
标题翻译：饱和全彩色堆叠式有机发光装置
公开(公告)号：US06232714B1
公开(公告)日：2001-05-15
申请号：US09291188
申请日：1999-04-14
申请人： Zilan Shen , Stephen R. Forrest , Paul Burrows
发明人： Zilan Shen , Stephen R. Forrest , Paul Burrows
IPC分类号： H01J6304
CPC分类号： H01L51/5036 , H01L27/3209 , H01L51/5262
摘要： Optical cavities in a stacked organic light emitting device (SOLEDs) can shift or attenuate the light emitted by the individual organic light emitting devices (OLEDs) in the stack. Interference caused by reflections within the stack, absorption, positioning of the light source, and the polarization of the emitted light can all determine how the spectra of the emitted light are affected by the SOLED structure. A detailed model that provides a good fit to measured SOLED emissions can be used to predict how a SOLED will affect light emitted by OLEDs. As a result, SOLED geometries that will optimize color saturation and external quantum efficiency can be predicted.
摘要翻译：层叠的有机发光器件（SOLED）中的光学腔可以移动或衰减由堆叠中的各个有机发光器件（OLED）发射的光。由堆叠内的反射引起的干扰，光源的吸收，定位以及发射的光的偏振都可以确定发射光的光谱如何受到SOLED结构的影响。可以使用提供与测量的SOLED排放量相适应的详细模型来预测SOLED如何影响OLED发出的光。因此，可以预测将优化色饱和度和外部量子效率的SOLED几何形状。

52. 发明授权

US6166489A Light emitting device using dual light emitting stacks to achieve full-color emission 有权
标题翻译：使用双重发光堆的发光器件实现全色发射
公开(公告)号：US6166489A
公开(公告)日：2000-12-26
申请号：US153349
申请日：1998-09-15
申请人： Mark Thompson , Stephen R. Forrest , Gong Gu
发明人： Mark Thompson , Stephen R. Forrest , Gong Gu
IPC分类号： H01L27/32 , H01L51/50 , H01J1/62
CPC分类号： H01L27/3209 , H01L27/3211 , H01L51/5036
摘要： Light emitting devices including at least one pixel comprising a first light emitting stack and a second light emitting stack placed side-by-side. The first and second light emitting stacks each comprise a first OLED and a second OLED over the first OLED. The first light emitting stack further includes a downconversion layer under the first OLED. Together, the first and second stacks are capable of emitting any visible color of light.
摘要翻译：包括至少一个像素的发光器件包括并排设置的第一发光堆叠和第二发光堆叠。第一和第二发光堆每个包括在第一OLED上的第一OLED和第二OLED。第一发光叠层还包括在第一OLED下面的下变换层。一起，第一和第二堆叠能够发出任何可见的光线。

53. 发明授权

US5172385A Polarization-selective integrated optoelectronic devices incorporating crystalline organic thin films 失效
标题翻译：掺杂结晶有机薄膜的极化选择性集成光电器件
公开(公告)号：US5172385A
公开(公告)日：1992-12-15
申请号：US665429
申请日：1991-03-05
申请人： Stephen R. Forrest , Franky F. So , De Y. Zang
发明人： Stephen R. Forrest , Franky F. So , De Y. Zang
IPC分类号： C07D487/00 , C30B23/02 , G02B6/122 , G02B6/126 , G02B6/13 , G02B6/42 , G02B27/28 , G02F1/015 , H01L27/15 , H01L27/30 , H01L31/10 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40 , H01S5/00 , H01S5/026 , H01S5/50
CPC分类号： H01L27/30 , C30B23/02 , C30B29/54 , G02B6/1221 , G02B6/126 , G02B6/13 , G02B6/42 , H01L27/305 , H01L51/0053 , H01L51/42 , H01S5/026 , H01S5/5036 , H01L51/0008 , H01L51/0012 , H01S5/0064 , Y02E10/549
摘要： Certain crystalline organic semiconductor compounds, such as 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA), when deposited by an ultrahigh vacuum process of organic molecular beam deposition, form highly ordered "quasi-epitaxial" films (32). Due to asymmetries in the molecular crystal structure of such compounds, the ordering of the films results in giant asymmetries in their dielectric properties. Such large dielectric asymmetries permit the construction of a variety of devices, including optical isolators (38), optically isolated lasers (48), optical isolated optical amplifiers (64), polarization-selective photodiodes (76), and metal-organic-inorganic semiconductor-metal detectors, among others.

54. 发明授权

US4990989A Restricted contact planar photodiode 失效
标题翻译：受限接触平面光电二极管
公开(公告)号：US4990989A
公开(公告)日：1991-02-05
申请号：US464505
申请日：1990-01-12
申请人： Mahmoud A. ElHamamsy , Stephen R. Forrest , John R. Zuber
发明人： Mahmoud A. ElHamamsy , Stephen R. Forrest , John R. Zuber
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/105
CPC分类号： H01L31/022408 , H01L31/02161 , H01L31/022416 , H01L31/105
摘要： An InGaAs photodiode is described in which a double layer of silicon nitride on the front surface serves several functions; both layers passivate the surface; an opening in the lower layer provides a diffusion mask for forming the p-n junction; and a narrower opening in the upper silicon nitride layer provides a deposition mask for forming a restricted area contact. In order to reduce strain near the junction, and hence reduce leakage currents and enhance reliability, the contact geometry has a narrow pedestal portion which contacts the surface in a zone remote from the junction edges and has a wider cap portion which is formed on the pedestal portion to seal the surface from the introduction of contaminants. The photodiode may be back-illuminated or front-illuminated.
摘要翻译：描述了InGaAs光电二极管，其中前表面上的双层氮化硅具有若干功能; 两层钝化表面; 下层的开口提供用于形成p-n结的扩散掩模; 并且上部氮化硅层中的较窄的开口提供用于形成限制区域接触的沉积掩模。为了减小接头附近的应变，并且因此减小泄漏电流并增强可靠性，接触几何形状具有窄的基座部分，其在远离接合边缘的区域中接触表面，并且具有形成在基座上的较宽的盖部分部分以密封表面免受污染物的引入。光电二极管可以是背照式或前照式的。

55. 发明授权

US4953155A Current summed optoelectronic crossbar switch 失效
标题翻译：目前总结的光电交叉开关
公开(公告)号：US4953155A
公开(公告)日：1990-08-28
申请号：US146062
申请日：1988-01-20
申请人： Gregory L. Tangonan , Vincent L. Jones , Stephen R. Forrest
发明人： Gregory L. Tangonan , Vincent L. Jones , Stephen R. Forrest
IPC分类号： H03K17/78 , H03K17/693 , H04B10/02 , H04Q3/52
CPC分类号： H04L12/5696
摘要： An optoelectronic crossbar switch 50 for selectively connecting signals on a plurality of optical fiber channels 52 to a given number of output receivers 30-36. Each optical fiber channel is split into a different number of optical fibers 56(a-h) which are arranged into an array having a plurality of rows and columns. Each row contains a fiber from each channel. A current summation network 58 is provided for each row and advantageously employs a plurality of selectively activatable detectors 60-74. The detectors are held in their open circuit state via a CMOS multiplexer 80 so as to minimize crosstalk between addressed and nonaddressed detectors. The switch 50 construction also minimizes the number of required components.
摘要翻译：用于选择性地将多个光纤通道52上的信号连接到给定数量的输出接收器30-36的光电交叉开关50。每个光纤通道被分成不同数量的光纤56（a-h），其布置成具有多个行和列的阵列。每行包含每个通道的光纤。为每行提供电流求和网络58，并有利地使用多个可选择性激活的检测器60-74。检测器通过CMOS多路复用器80保持在开路状态，以便最小化寻址和非寻址检测器之间的串扰。开关50结构还使所需部件的数量最小化。

56. 发明授权

US4894703A Restricted contact, planar photodiode 失效
标题翻译：受限触点，平面光电二极管
公开(公告)号：US4894703A
公开(公告)日：1990-01-16
申请号：US767613
申请日：1985-08-20
申请人： Mahmoud A. E. Hamamsy , Stephen R. Forrest , John R. Zuber
发明人： Mahmoud A. E. Hamamsy , Stephen R. Forrest , John R. Zuber
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/105
CPC分类号： H01L31/02161 , H01L31/022408 , H01L31/022416 , H01L31/105
摘要： A back-illuminated InGaAs photodiode is described in which a double layer of silicon nitride on the front surface serves several functions; both layers passivate the surface; an opening in the lower layer provides a diffusion mask for forming the p-n junction; and a narrower opening in the upper silicon nitride layer provides a deposition mask for forming a restricted area contact. In order to reduce strain near the junction, and hence reduce leakage currents and enhance reliability, the contact geometry has a narrow pedestal portion which contacts the surface in a zone remote from the junction edges and has a wider cap portion which is formed on the pedestal portion to seal the surface from the introduction of contaminants.
摘要翻译：描述了背照式InGaAs光电二极管，其中前表面上的双层氮化硅具有若干功能; 两层钝化表面; 下层的开口提供用于形成p-n结的扩散掩模; 并且上部氮化硅层中的较窄的开口提供用于形成限制区域接触的沉积掩模。为了减小接头附近的应变，并且因此减小泄漏电流并增强可靠性，接触几何形状具有窄的基座部分，其在远离接合边缘的区域中接触表面，并且具有形成在基座上的较宽的盖部分部分以密封表面免受污染物的引入。

57. 发明授权

US4771325A Integrated photodetector-amplifier device 失效
标题翻译：集成光电检测放大器装置
公开(公告)号：US4771325A
公开(公告)日：1988-09-13
申请号：US700441
申请日：1985-02-11
申请人： Julian Cheng , Bernard C. DeLoach, Jr. , Stephen R. Forrest
发明人： Julian Cheng , Bernard C. DeLoach, Jr. , Stephen R. Forrest
IPC分类号： H01L27/14 , H01L27/144 , H01L27/146 , H01L31/10 , H01L31/105 , H01L33/00
CPC分类号： H01L31/105 , H01L27/1443
摘要： An integrated photodetector-amplifier is described which is planar and exhibits excellent circuit characteristics including low input capacitance, high speed, and high sensitivity. Also, certain self-alignment features and a planar technology made fabrication of the circuits simpler and easier than most such circuits.
摘要翻译：描述了一种平面的集成光电检测器 - 放大器，并且具有包括低输入电容，高速度和高灵敏度的优异的电路特性。此外，某些自对准特征和平面技术使得电路的制造比大多数这样的电路更简单和容易。

58. 发明授权

US4611385A Devices formed utilizing organic materials 失效
标题翻译：利用有机材料形成的装置
公开(公告)号：US4611385A
公开(公告)日：1986-09-16
申请号：US602700
申请日：1984-04-23
申请人： Stephen R. Forrest , Martin L. Kaplan , Paul H. Schmidt
发明人： Stephen R. Forrest , Martin L. Kaplan , Paul H. Schmidt
IPC分类号： H01L51/42 , C07D471/00 , G02B6/30 , G02B6/34 , G02B6/42 , H01L21/66 , H01L27/14 , H01L29/45 , H01L51/00 , H01L51/30 , H01L29/28
CPC分类号： H01L51/4213 , G02B6/12007 , G02B6/30 , G02B6/42 , G02B6/4246 , H01L29/452 , H01L51/0587 , G02B6/29319 , H01L51/0053 , Y02E10/549
摘要： The use of an organic material having a conjugated ring system such as 3,4,9,10-perylenetetracarboxylic dianhydride interfaced with a semiconductor material such as silicon yields quite acceptable rectifying properties. These properties are used to test the suitability of the substrate during processing. Additionally, these materials upon irradiation change refractive index, allowing production of optical devices such as gratings. The combination of electrical and optical devices formed using these organic materials also allows relatively simple fabrication of integrated opto-electronic structures.
摘要翻译：使用具有共轭环系的有机材料，例如与诸如硅之类的半导体材料接合的3,4,9,10-苝四羧酸二酐产生相当可接受的整流性能。这些性质用于测试处理过程中基材的适用性。此外，这些材料在照射时改变折射率，允许制造诸如光栅的光学装置。使用这些有机材料形成的电气和光学器件的组合也允许相对简单地制造集成的光电结构。

59. 发明授权

US4473835A Long wavelength avalanche photodetector 失效
标题翻译：长波长雪崩光电探测器
公开(公告)号：US4473835A
公开(公告)日：1984-09-25
申请号：US275346
申请日：1981-06-19
申请人： Stephen R. Forrest , Ock-Ky Kim , Richard G. Smith
发明人： Stephen R. Forrest , Ock-Ky Kim , Richard G. Smith
IPC分类号： H01L31/107 , H01L27/14 , H01L29/161 , H01L29/90
CPC分类号： H01L31/1075
摘要： An avalanche photodetector useful at wavelengths as long as 1.7 microns with low noise is achieved. The crystal used includes successive layers of p-type indium phosphide, n-type indium phosphide, and n-type indium gallium arsenide. An appropriate total of fixed charges in the n-type indium phosphide and a graded bandgap heterointerface region are important for the improved results.
摘要翻译：实现了在具有低噪声的波长长达1.7微米的情况下可用的雪崩光电探测器。所使用的晶体包括p型磷化铟，n型磷化铟和n型砷化铟镓的连续层。在n型磷化铟和梯度带隙异质界面区域中适当的固定电荷总量对于改进的结果是重要的。

60. 发明授权

US4414066A Electrochemical photoetching of compound semiconductors 失效
标题翻译：化学半导体的电化学光刻
公开(公告)号：US4414066A
公开(公告)日：1983-11-08
申请号：US416472
申请日：1982-09-10
申请人： Stephen R. Forrest , Paul A. Kohl , Richard L. Panock
发明人： Stephen R. Forrest , Paul A. Kohl , Richard L. Panock
IPC分类号： C25F3/12 , H01L21/3063 , H01L21/465 , H01L21/467
CPC分类号： H01L21/467 , C25F3/12 , H01L21/30635 , H01L21/465
摘要： A procedure is described for electrochemically photoetching n-type and intrinsic compound semiconductors. The process involves applying a potential to the compound semiconductor while it is in contact with an electrolytic solution and irradiating the surface to be etched with light in a certain energy range. By suitable adjustment in the potential, electrolytic solution composition and light energy, the etch rate is made proportional to the light intensity. By suitable variation in light intensity and light-ray direction, various geometrical features can be made on the surface of the compound semiconductor. For example, a hole with straight sides can be made in the compound semiconductor by use of a light spot and parallel (collimated) light rays. An advantageous application of this process is the fabrication of a photodiode with a hole in the center for use in bidirectional communication systems and to monitor power output for optical communication sources. The advantage of this process is that no damage occurs outside etched hole so that a maximum area of the photodiode remains active for detecting incoming radiation. Another advantage of the process is that etching will stop where the material becomes p-type so that etching can be made to stop automatically at a p/n junction.
摘要翻译：描述了用于电化学光刻n型和本征化合物半导体的方法。该方法包括在化合物半导体与电解液接触的同时施加电位，并在一定的能量范围内用光照射被蚀刻的表面。通过适当调整电位，电解液组成和光能，刻蚀速率与光强成正比。通过适当的光强度和光线方向的变化，可以在化合物半导体的表面上形成各种几何特征。例如，可以通过使用光点和平行（准直）光线在化合物半导体中制造具有直边的孔。该方法的有利应用是制造在中心具有用于双向通信系统的孔的光电二极管，并监视光通信源的功率输出。该方法的优点是在蚀刻孔外部不产生损伤，使得光电二极管的最大面积保持活跃以检测入射辐射。该方法的另一个优点是，在材料变为p型的情况下，蚀刻将停止，使得蚀刻可以在p / n结处自动停止。

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