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    • 54. 发明授权
    • Systems and methods related to the formation of carbon-based nanostructures
    • 与碳基纳米结构形成相关的系统和方法
    • US08257678B2
    • 2012-09-04
    • US12847905
    • 2010-07-30
    • Stephen A. Steiner, IIIBrian L. Wardle
    • Stephen A. Steiner, IIIBrian L. Wardle
    • D01C5/00
    • C01B32/16B82Y30/00B82Y40/00C01B32/162C01B32/18C01B32/186C01B2202/02C01B2202/06Y10S977/742Y10S977/842Y10S977/843
    • Systems and methods for the formation of carbon-based nanostructures are generally described. In some embodiments, the nanostructures may be formed on a nanopositor. The nanopositor can comprise, in some embodiments, at least one of metal atoms in a non-zero oxidation state and metalloid atoms in a non-zero oxidation state. For example, the nanopositor may comprise a metal oxide, a metalloid oxide, a metal chalcogenide, a metalloid chalcogenide, and the like. The carbon-based nanostructures may be grown by exposing the nanopositor, in the presence or absence of a growth substrate, to a set of conditions selected to cause formation of carbon-based nanostructures on the nanopositor. In some embodiments, metal or metalloid atoms in a non-zero oxidation state are not reduced to a zero oxidation state during the formation of the carbon-based nanostructures. In some cases, metal or metalloid atoms in a non-zero oxidation state do not form a carbide during the formation of the carbon-based nanostructures.
    • 通常描述用于形成碳基纳米结构的系统和方法。 在一些实施方案中,纳米结构可以形成在纳米激光器上。 在一些实施方案中,纳米导体可以包括非零氧化态的金属原子和非零氧化态的准金属原子中的至少一种。 例如,纳米阳极剂可以包含金属氧化物,类金属氧化物,金属硫族化物,准金属硫族化物等。 碳纳米结构可以通过在存在或不存在生长衬底的情况下将纳米孔体暴露于所选择的一系列条件来生长,所述条件被选择用于在纳米反应器上形成碳基纳米结构。 在一些实施方案中,非零氧化态的金属或准金属原子在形成碳基纳米结构期间不会降低至零氧化态。 在一些情况下,非零氧化态的金属或准金属原子在形成碳基纳米结构期间不形成碳化物。
    • 58. 发明申请
    • Single Wall Carbon Nanotubes By Atmospheric Chemical Vapor Deposition
    • 单壁碳纳米管通过大气化学气相沉积
    • US20120156124A1
    • 2012-06-21
    • US12029856
    • 2008-02-12
    • Amit GoyalIqbal Zafar
    • Amit GoyalIqbal Zafar
    • D01F9/12B82B1/00B82B3/00
    • B82Y40/00B82Y30/00C01B32/162C01B2202/02
    • The present disclosure provides for systems and methods for producing carbon nanotubes. More particularly, the present disclosure provides for improved systems and methods for producing single wall carbon nanotubes (SWNTs) by chemical vapor deposition (CVD) using a carbon source in the presence of a catalyst. In exemplary embodiments, the present disclosure provides for improved systems and methods for producing single wall carbon nanotubes (SWNTs) by chemical vapor deposition (CVD) using carbon monoxide (CO) disproportionation in the presence of a catalyst composition on a catalyst support material. In one embodiment, the present disclosure provides for systems and methods for producing single wall carbon nanotubes (SWNTs) by chemical vapor deposition (CVD) using carbon monoxide (CO) disproportionation with CO pressure from about 0.20 atm to about 1.0 atm in the presence of a cobalt/molybdenum catalyst composition on a magnesium oxide catalyst support.
    • 本公开提供了用于生产碳纳米管的系统和方法。 更具体地,本公开提供了通过在催化剂存在下使用碳源的化学气相沉积(CVD)来制备单壁碳纳米管(SWNT)的改进的系统和方法。 在示例性实施例中,本公开提供了在催化剂载体材料上的催化剂组合物存在下使用一氧化碳(CO)歧化,通过化学气相沉积(CVD)制备单壁碳纳米管(SWNT)的改进的系统和方法。 在一个实施方案中,本公开提供了通过化学气相沉积(CVD)使用一氧化碳(CO)歧化制备单壁碳纳米管(SWNT)的系统和方法,其中CO压力为约0.20atm至约1.0atm, 在氧化镁催化剂载体上的钴/钼催化剂组合物。