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51. 发明授权

US09520314B2 High temperature electrostatic chuck bonding adhesive 有权
标题翻译：高温静电卡盘粘合胶
公开(公告)号：US09520314B2
公开(公告)日：2016-12-13
申请号：US12640496
申请日：2009-12-17
申请人： Jennifer Y. Sun , Senh Thach , Ren-Guan Duan
发明人： Jennifer Y. Sun , Senh Thach , Ren-Guan Duan
IPC分类号： H01L21/68 , H02N13/00 , C09D183/04 , H01L21/683
CPC分类号： H01L21/6833 , C08K3/22 , C08K3/28 , C08K2003/2227 , C08K2003/282 , C09D183/04 , C09J11/04 , C09J183/04 , H01L21/6831 , H02N13/00 , Y10T279/23 , Y10T279/34
摘要： Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content Σ D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (Al2O3), aluminum nitride (AlN), yttrium oxide (Y2O3), or combinations thereof. In some embodiments, the filler may comprise particles having a diameter of about 10 nanometers to about 10 microns.
摘要翻译：本文提供了用于将静电卡盘结合到基板支撑件的部件的方法和装置。在一些实施例中，用于粘合基底支撑件的部件的粘合剂可以包括其中分散有填料的硅基聚合物材料的基体。硅基聚合物材料可以是分子量小于约500ppm的具有低分子量（LMW）含量ΣD3-D10的聚二甲基硅氧烷（PDMS）结构。在一些实施方案中，填料可以占粘合剂层的约50至约70体积％。在一些实施例中，填料可以包括氧化铝（Al 2 O 3），氮化铝（AlN），氧化钇（Y 2 O 3）或其组合的颗粒。在一些实施方案中，填料可以包含直径为约10纳米至约10微米的颗粒。

52. 发明授权

US09518326B2 Method for forming an electrostatic chuck using film printing technology 有权
标题翻译：使用薄膜印刷技术形成静电卡盘的方法
公开(公告)号：US09518326B2
公开(公告)日：2016-12-13
申请号：US14059402
申请日：2013-10-21
申请人： Applied Materials, Inc.
发明人： Karl M. Brown
IPC分类号： C23C28/00 , H01L21/683 , H02N13/00
CPC分类号： C23C28/32 , C23C28/34 , H01L21/6831 , H02N13/00
摘要： In one embodiment, a method for forming an electrostatic chuck includes forming vias in a ceramic plate and printing a metal paste in the vias and curing the ceramic plate. The method includes printing the metal paste on a front surface of the ceramic plate and curing the ceramic plate, and printing the metal paste on a bottom surface of the ceramic plate and curing the ceramic plate to form one or more contact pads. The method also includes printing a dielectric film on the front surface of the ceramic plate and curing the ceramic plate. The method may further include printing one or more heating elements on a bottom surface of the ceramic plate and curing the ceramic plate, printing the dielectric film on the bottom, and bonding the ceramic plate to a backing plate.
摘要翻译：在一个实施例中，用于形成静电卡盘的方法包括在陶瓷板中形成通孔并在通孔中印刷金属膏并固化陶瓷板。该方法包括将金属膏印刷在陶瓷板的前表面上并固化陶瓷板，并将金属膏印刷在陶瓷板的底表面上并固化陶瓷板以形成一个或多个接触垫。该方法还包括在陶瓷板的前表面上印刷电介质膜并固化陶瓷板。该方法还可以包括在陶瓷板的底表面上印刷一个或多个加热元件并固化陶瓷板，将电介质膜印刷在底部上，并将陶瓷板粘合到背板上。

53. 发明申请

US20160358802A1 BIPOLAR MOBILE ELECTROSTATIC CARRIERS FOR WAFER PROCESSING 有权
标题翻译：双极移动静电加速器
公开(公告)号：US20160358802A1
公开(公告)日：2016-12-08
申请号：US14991772
申请日：2016-01-08
申请人： Solexel, Inc.
发明人： Mehrdad M. Moslehi , David Xuan-Qi Wang
IPC分类号： H01L21/683 , H02N13/00 , H01L21/3065 , H01L21/762 , H01L21/02
CPC分类号： H01L21/6833 , G03F7/70708 , H01L21/02164 , H01L21/0217 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/3065 , H01L21/683 , H01L21/6831 , H01L21/76251 , H01L21/76275 , H01L21/76281 , H01L21/76879 , H02N13/00 , Y02P80/30
摘要： In one embodiment, there is provided a carrier comprising a top semiconductor layer having isolated positive electrode regions and isolated negative electrode regions separated by a frontside trench through the top semiconductor layer extending at least to an underlying insulating layer positioned between the top semiconductor layer and a bottom semiconductor layer. A dielectric layer covers the top exposed surfaces of the carrier. Backside trenches through the bottom semiconductor layer extending at least to the insulating layer form isolated backside regions corresponding to the frontside positive and negative electrode regions. Backside contacts positioned on the bottom semiconductor layer and coupled to the positive and negative electrode regions allow for the electric charging of the frontside electrode regions.
摘要翻译：在一个实施例中，提供了一种载体，其包括顶部半导体层，其具有隔离的正电极区域和分离的负电极区域，所述隔离的负电极区域通过顶部半导体层被前侧沟槽分隔开，所述顶部半导体层至少延伸到位于顶部半导体层和底部半导体层。电介质层覆盖载体的顶部暴露表面。通过至少延伸至绝缘层的底部半导体层的背面沟槽形成对应于正面正极和负极区域的隔离的背侧区域。位于底部半导体层上并且耦合到正极和负极区域的背面触点允许前侧电极区域的电荷。

54. 发明授权

US09466519B2 De-chuck control method and control device for plasma processing apparatus 有权
标题翻译：用于等离子体处理装置的脱卡盘控制方法和控制装置
公开(公告)号：US09466519B2
公开(公告)日：2016-10-11
申请号：US14367305
申请日：2013-01-25
申请人： Tokyo Electron Limited
发明人： Atsushi Kawabata
IPC分类号： H01L21/683 , G01R19/25 , H02N13/00
CPC分类号： H01L21/6833 , G01R19/25 , H02N13/00
摘要： A de-chuck control method is provided for de-chucking a workpiece from an electrostatic chuck, which includes a chuck electrode and electrostatically attracts the workpiece. The de-chuck control method includes acquiring a time-integration value of a current by measuring the current flowing from the chuck electrode for a predetermined time period after a plasma process is ended and a voltage applied to the chuck electrode is turned off; calculating a difference between the time-integration value of the current and an electric charge charged to the chuck electrode during the plasma process; calculating a counter voltage according to a residual charge of the electrostatic chuck based on the difference and a predetermined correlation between the time-integration value of the current and a torque acting on a support pin for supporting the workpiece; and applying the counter voltage to the chuck electrode while introducing gas into a processing chamber and generating plasma.
摘要翻译：提供了一种脱卡盘控制方法，用于从包括卡盘电极的静电卡盘中去夹紧工件，并静电吸引工件。脱卡盘控制方法包括通过在等离子体处理结束之后的预定时间段内测量从卡盘电极流出的电流并且施加到卡盘电极的电压被关闭来获取电流的时间积分值; 计算在等离子体处理期间电流的时间积分值与充电到卡盘电极的电荷之间的差; 基于所述差异以及所述电流的时间积分值与作用在用于支撑所述工件的支撑销上的转矩之间的预定相关性来计算根据所述静电卡盘的剩余电量的计数器电压; 并将反电压施加到卡盘电极，同时将气体引入处理室并产生等离子体。

55. 发明申请

US20160230269A1 RADIALLY OUTWARD PAD DESIGN FOR ELECTROSTATIC CHUCK SURFACE 审中-公开
标题翻译：用于静电卡盘表面的径向外罩设计
公开(公告)号：US20160230269A1
公开(公告)日：2016-08-11
申请号：US14616647
申请日：2015-02-06
申请人： Applied Materials, Inc.
发明人： Govinda RAJ , Robert T. HIRAHARA
IPC分类号： C23C14/50 , C23C14/04 , H02N13/00
CPC分类号： C23C14/50 , C23C14/042 , H01L21/67109 , H01L21/6831 , H01L21/6875 , H01L21/68757 , H02N13/00
摘要： An electrostatic chuck assembly and processing chamber having the same are disclosed herein. In one embodiment, an electrostatic chuck assembly is provided that includes a body having an outer edge connecting a frontside surface and a backside surface. The body has chucking electrodes disposed therein. A wafer spacing mask is formed on the frontside surface of the body. The wafer spacing mask has a plurality of elongated features. The elongated features have long axes that are radial aligned from the center to the outer edge. The wafer spacing mask has a plurality of radially aligned gas passages defined between the elongated features.
摘要翻译：本文公开了具有该静电卡盘组件和处理室的静电卡盘组件和处理室。在一个实施例中，提供一种静电卡盘组件，其包括具有连接前侧表面和后侧表面的外边缘的主体。本体具有设置在其中的夹持电极。在身体的前侧表面上形成晶片间隔掩模。晶片间隔掩模具有多个细长特征。细长特征具有从中心向外边缘径向对准的长轴。晶片间隔掩模具有限定在细长特征之间的多个径向排列的气体通道。

56. 发明授权

US09406541B2 Compliant bipolar micro device transfer head with silicon electrodes 有权
公开(公告)号：US09406541B2
公开(公告)日：2016-08-02
申请号：US14957331
申请日：2015-12-02
申请人： LuxVue Technology Corporation
发明人： Dariusz Golda , Andreas Bibl
IPC分类号： H01L29/76 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , B32B38/18 , B81C99/002 , H01L21/266 , H01L21/3083 , H01L21/76264 , H01L24/75 , H01L29/06 , H01L29/0619 , H01L29/0692 , H01L29/0696 , H01L29/407 , H01L29/66143 , H01L29/66348 , H01L29/7806 , H01L29/7813 , H01L29/872 , H01L29/8725 , H01L2224/7598 , H01L2924/1461 , H02N13/00 , Y10T156/17
摘要： A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

57. 发明申请

US20160172226A1 GAS COOLED MINIMAL CONTACT AREA(MCA) ELECTROSTATIC CHUCK(ESC) FOR ALUMINUM NITRIDE(ALN) PVD PROCESS 审中-公开
标题翻译：气体冷却最小接触面积（MCA）用于氮化铝（ALN）PVD工艺的静电切割（ESC）
公开(公告)号：US20160172226A1
公开(公告)日：2016-06-16
申请号：US14567161
申请日：2014-12-11
申请人： Applied Materials, Inc.
发明人： Brian T. WEST , Manoj A. GAJENDRA , Soundarrajan JEMBULINGAM
IPC分类号： H01L21/683 , C23C16/46 , C23C16/455 , H02N13/00 , C23C14/22
CPC分类号： C23C16/46 , C23C14/50 , C23C16/4586 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01L21/67109 , H01L21/6831
摘要： Embodiments of the disclosure include an electrostatic chuck assembly, a processing chamber and a method of maintaining a temperature of a substrate is provided. In one embodiment, an electrostatic chuck assembly is provided that includes an electrostatic chuck, a cooling plate and a gas box. The cooling plate includes a gas channel formed therein. The gas box is operable to control a flow of cooling gas through the gas channel.
摘要翻译：本发明的实施例包括静电卡盘组件，处理室以及维持基板温度的方法。在一个实施例中，提供了包括静电卡盘，冷却板和气体箱的静电卡盘组件。冷却板包括形成在其中的气体通道。气箱可操作以控制通过气体通道的冷却气体的流动。

58. 发明授权

US09355776B2 Capacitor assemblies for coupling radio frequency (RF) and direct current (DC) energy to one or more common electrodes 有权
标题翻译：用于将射频（RF）和直流（DC）能量耦合到一个或多个公共电极的电容器组件
公开(公告)号：US09355776B2
公开(公告)日：2016-05-31
申请号：US14249327
申请日：2014-04-09
申请人： APPLIED MATERIALS, INC.
发明人： Carl Johnson , Les Wojnowski , Lawrence A. Ringor , Jeffrey Ludwig
IPC分类号： H01G2/24 , H01G2/22 , H02N13/00 , H01G4/28
CPC分类号： H01G2/22 , H01G4/28 , H02N13/00
摘要： Embodiments of a capacitor assembly for coupling radio frequency (RF) and direct current (DC) power to an electrode and substrate support incorporating same are provided herein. In some embodiments, the capacitor assembly includes a first conductive plate to receive RF power from an RF power source, the first conductive plate including a central bore; at least one capacitor coupled to the first conductive plate and surrounding the central bore; and a second conductive plate electrically coupled to the first conductive plate via the at least one capacitor, the second conductive plate including an input tap to receive DC power from a DC power source and at least one output tap to couple the RF and DC power to an electrode.
摘要翻译：本文提供了一种用于将射频（RF）和直流（DC）功率耦合到电极的基座支架的结合实施例。在一些实施例中，电容器组件包括用于从RF电源接收RF功率的第一导电板，第一导电板包括中心孔; 耦合到所述第一导电板并围绕所述中心孔的至少一个电容器; 以及第二导电板，其经由所述至少一个电容器电耦合到所述第一导电板，所述第二导电板包括输入抽头，以从DC电源接收DC电力，以及至少一个输出抽头将所述RF和DC功率耦合到电极。

59. 发明申请

US20160049323A1 METHOD AND APPARATUS OF PROCESSING WAFERS WITH COMPRESSIVE OR TENSILE STRESS AT ELEVATED TEMPERATURES IN A PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM 审中-公开
标题翻译：在等离子体增强化学蒸气沉积系统中的加压温度下具有压缩或拉伸应力的加工辊的方法和装置
公开(公告)号：US20160049323A1
公开(公告)日：2016-02-18
申请号：US14824229
申请日：2015-08-12
申请人： Applied Materials, Inc.
发明人： Zheng John YE , Jay D. PINSON, II , Hiroji HANAWA , Jianhua ZHOU , Xing LIN , Ren-Guan DUAN , Kwangduk Douglas LEE , Bok Hoen KIM , Swayambhu P. BEHERA , Sungwon HA , Ganesh BALASUBRAMANIAN , Juan Carlos ROCHA- ALVAREZ , Prashant Kumar KULSHRESHTHA , Jason K. FOSTER , Mukund SRINIVASAN , Uwe P. HALLER , Hari K. PONNEKANTI
IPC分类号： H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , H01L21/68757 , H02N13/00
摘要： Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.
摘要翻译：本公开的实施例提供了一种静电卡盘，用于在高温下维持在等离子体反应器中正在加工的基板的平坦度。在一个实施例中，静电卡盘包括联接到支撑杆的卡盘体，卡盘主体具有基底支撑表面，卡盘体的体积电阻率值约为1×107ohm-cm至约1×1015ohm- 在约250℃至约700℃的温度下，以及嵌入在本体中的电极，电极耦合到电源。在一个实例中，卡盘主体由氮化铝材料组成，已经被观察到能够在沉积或蚀刻过程期间优化约600℃或更高的夹持性能，或任何其他使用高工作温度和基板夹紧功能。

60. 发明申请

US20160036355A1 ELECTROSTATIC CHUCK DEVICE 审中-公开
标题翻译：静电切割装置
公开(公告)号：US20160036355A1
公开(公告)日：2016-02-04
申请号：US14776787
申请日：2014-03-11
申请人： SMITOMO OSAKA CEMENT CO., LTD.
发明人： Yoshiaki Moriya , Kazuto Ando
IPC分类号： H02N13/00
CPC分类号： H02N13/00 , H01L21/6831 , H01L21/6875
摘要： Provided is an electrostatic chuck device in which the attachment of particles to the rear surface of a plate-like specimen can be further suppressed by suppressing the generation source of the particles and, furthermore, an effect of cooling the plate-like specimen using a cooling gas can be improved. The electrostatic chuck device is formed by including an electrostatic chuck portion in which an upper surface (2a) of a ceramic plate-like body (2) is used as a placement surface on which a wafer is placed and an electrostatic adsorption electrode is provided inside the ceramic plate-like body (2) or on the rear surface thereof, multiple protrusions (11) are formed on the upper surface (2a), and multiple fine protrusions (13) are formed in regions (12) excluding the multiple protrusions (11) in the upper surface (2a).
摘要翻译：提供一种静电卡盘装置，其中通过抑制颗粒的发生源，可以进一步抑制颗粒附着到板状样品的后表面，此外，还可以使用冷却来对板状样品进行冷却气体可以改善。静电吸盘装置通过包括静电吸盘部分形成，其中使用陶瓷板状体（2）的上表面（2a）作为其上放置晶片的放置表面和在其内部设置静电吸附电极陶瓷板状体（2）或其后表面上形成有在上表面（2a）上的多个突起（11），并且在不同于多个突起的区域（12）中形成多个细小突起（13） 11）在上表面（2a）中。

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