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61. 发明授权

US10046460B2 Robot teaching position correcting method and system 有权
公开(公告)号：US10046460B2
公开(公告)日：2018-08-14
申请号：US15281115
申请日：2016-09-30
申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
发明人： Dong Xu
IPC分类号： G06F19/00 , B25J9/16 , B25J11/00
摘要： A robot teaching position correcting method and system is provided. The robot is driven to move along wafer pick-and-place operation paths defined by a sequence of waypoints. Distances between the waypoint and a wafer supporter of the wafer carrier above the waypoint are detected by upper sensors provided on a top surface of the robot when the robot is positioned at the waypoint. Then, the position parameter of the waypoint is corrected accordingly, so as to ensure safe wafer handling.

62. 外观设计

USD984972S1 Electrostatic chuck for semiconductor manufacture 有权
公开(公告)号：USD984972S1
公开(公告)日：2023-05-02
申请号：US35513844
申请日：2021-09-17
申请人： Beijing NAURA Microelectronics Equipment Co., Ltd.
设计人： Quanyu Shi

63. 发明申请

US20230023621A1 CONTROL CIRCUIT, PULSED POWER SUPPLY SYSTEM, AND SEMICONDUCTOR PROCESSING EQUIPMENT 有权
公开(公告)号：US20230023621A1
公开(公告)日：2023-01-26
申请号：US17786429
申请日：2020-12-17
申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
发明人： Gang WEI
IPC分类号： H01J37/32 , H02M3/155
摘要： A control circuit for outputting a direct current (DC) signal in the form of a pulsed signal includes a switch circuit having a first terminal, a second terminal, a third terminal, a fourth terminal, a first control terminal, and a second control terminal, wherein the first terminal and the second terminal are input terminals of the DC signal, the third terminal and the fourth terminal are output terminals of the pulsed signal, the first control terminal and the second control terminal receive a first signal or a second signal to control outputting the pulsed signal, in response to the first control terminal and the second control terminal receiving the first signal, the third terminal and the fourth terminal output the pulsed signal, and in response to the first control terminal and the second control terminal receiving the second signal, the third terminal and the fourth terminal stop outputting the pulsed signal; and an energy storage circuit having two terminals connected to the first terminal and the second terminal of the switch circuit to store residual electric energy of the switch circuit when the switch circuit does not output the pulsed signal. The control circuit reduces the oscillation the voltage of occurred at the end of each pulse, and improving the accuracy of controlling the plasma energy and density used in the semiconductor processes.

64. 发明申请

US20220380887A1 PHYSICAL VAPOR DEPOSITION CHAMBER AND PHYSICAL VAPOR DEPOSITION APPARATUS 有权
公开(公告)号：US20220380887A1
公开(公告)日：2022-12-01
申请号：US17773678
申请日：2020-10-23
申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
发明人： Hongrui GUO , Bing LI , Qiwei HUANG
IPC分类号： C23C14/35 , H01J37/34
摘要： Embodiments of the present disclosure disclose a physical vapor deposition (PVD) chamber and a PVD apparatus. The PVD chamber includes a chamber body. An upper electrode assembly is arranged in the chamber body. The upper electrode assembly includes a base plate assembly for carrying a magnetron, a backplate arranged at an interval with the base plate assembly, and a connection assembly that connects the base plate assembly to the backplate. The connection assembly is connected to the base plate assembly. The connection assembly is threadedly connected to the backplate, so that the interval between the base plate assembly and the backplate can be adjusted by moving the connection assembly relative to the backplate. The PVD chamber and the PVD apparatus of embodiments of the present disclosure can conveniently adjust a size of a target magnetic gap between the base plate assembly and the target according to requirements or actual conditions.

65. 发明申请

US20220375762A1 ETCHING METHOD, AIR-GAP DIELECTRIC LAYER, AND DYNAMIC RANDOM-ACCESS MEMORY 有权
公开(公告)号：US20220375762A1
公开(公告)日：2022-11-24
申请号：US17769841
申请日：2020-10-26
申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
发明人： Xin WU , Chun WANG , Bo ZHENG , Zhenguo MA
IPC分类号： H01L21/311 , H01L21/764 , H01L27/108
摘要： The embodiments of the present disclosure provide an etching method, an air-gap dielectric layer, and a dynamic random-access memory. The etching method is configured to selectively etch a silicon oxide film on a wafer surface that includes the silicon oxide film and a silicon nitride film. In addition, the etching method includes: a surface layer removal process including: etching the silicon oxide film at a first etching rate and removing a surface modification layer covering on the silicon nitride film; and an etching process including: etching the silicon oxide film at a second etching rate. The first etching rate is smaller than the second etching rate. In the etching method according to the present disclosure, through selectively etching the silicon oxide film, a substantial degradation of an etching selectivity ratio of SiO2/SiN caused by the surface modification layer on the wafer surface can be avoided. Through making the first etching rate smaller than the second etching rate, a highly efficient etching process is ensured and at the same time, excessive etching can be avoided in the surface layer removal process, thereby further ensuring the high etching selectivity ratio.

66. 发明申请

US20220356600A1 EPITAXIAL DEVICE AND GAS INTAKE STRUCTURE FOR EPITAXIAL DEVICE 有权
公开(公告)号：US20220356600A1
公开(公告)日：2022-11-10
申请号：US17642889
申请日：2020-09-07
申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
发明人： Zhenjun XIA , Leilei WANG
IPC分类号： C30B25/08 , C30B29/06 , C30B25/16 , C30B29/12
摘要： The present disclosure provides an epitaxial device and a gas intake structure configured for the epitaxial device. The epitaxial device includes a chamber, a submount, a gas intake structure, and an exhaust structure. The gas intake structure includes: a plurality of first gas intake passages configured to provide a first process gas containing a gas for an epitaxial reaction to a to-be-processed surface along a first direction, the first direction being parallel to the to-be-processed surface; and two second gas intake passages that are arranged at intervals along a second direction, and correspond to two adjustment areas adjacent to edges on both sides of the to-be-processed surface respectively, where at least one first gas intake passage is disposed between the two second gas intake passages, each second gas intake passage provides a second process gas to the corresponding adjustment area along the first direction, and the second process gas is configured to adjust a concentration of the gas for the epitaxial reaction flowing through the adjustment areas. The epitaxial device and the gas intake structure provided by the embodiments of the present disclosure improve uniformity of thickness distribution of an epitaxial layer formed on the entire to-be-processed surface.

67. 发明申请

US20220267893A1 SPUTTERING DEVICE 有权
公开(公告)号：US20220267893A1
公开(公告)日：2022-08-25
申请号：US17740719
申请日：2022-05-10
申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
发明人： Molin LI
IPC分类号： C23C14/35 , C23C14/50
摘要： A sputtering device includes a reaction chamber, a thimble mechanism, and a microwave heating mechanism. The reaction chamber includes a base configured to carry a workpiece. The thimble mechanism is arranged in the reaction chamber. The thimble mechanism generates a relative ascending and descending motion with the base and lifts the workpiece from the base. The microwave heating mechanism is arranged in the reaction chamber and includes a microwave transmitter and a mobile device. The mobile device is connected to the microwave transmitter and configured to move the microwave transmitter to a position under the workpiece in response to the workpiece being carried by the thimble mechanism to cause the microwave transmitter to emit microwaves to the workpiece to heat the workpiece.

68. 发明授权

US11315768B2 Loading apparatus and physical vapor deposition apparatus 有权
公开(公告)号：US11315768B2
公开(公告)日：2022-04-26
申请号：US16626863
申请日：2018-06-15
申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
发明人： Xuewei Wu , Tong Wang , Boyu Dong , Jun Zhang , Bingliang Guo , Jun Wang , Henan Zhang , Baogang Xu , Huaichao Ma , Shaohui Liu , Kangning Zhao , Yujie Geng , Qingxuan Wang , Yaxin Cui
IPC分类号： H01J37/32 , C23C14/35 , C23C14/50 , H01J37/34
摘要： The present disclosure provides a loading apparatus and a physical vapor deposition (PVD) apparatus. The loading apparatus includes a pedestal configured to support a workpiece; and a first support member placed on the pedestal and configured to push up a cover ring when the pedestal is at an operation position to prevent an overlapping portion of a cover ring and the workpiece from contacting each other. In the loading apparatus and the PVD apparatus, the first support member supports the cover ring, such that the cover ring does not contact the workpiece, thereby reducing stress forces on the workpiece by external components.

69. 发明授权

US11308453B2 Method and system for scheduling pieces of materials based on real-time device status 有权
公开(公告)号：US11308453B2
公开(公告)日：2022-04-19
申请号：US16009573
申请日：2018-06-15
申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD
发明人： Lin Cui
IPC分类号： G06Q10/10 , B62D61/06 , G05B19/418 , H01L21/677 , H01L21/67 , H01L21/687
摘要： The present disclosure provides a method and system for scheduling pieces of materials based on a real-time status of a device. Scheduling rules for scheduling the pieces of materials are obtained according to determined parameters. It is determined whether all designated transmission and process tasks of the pieces of materials are completed. If the designated transmission and processing tasks of the pieces of materials are completed, terminating the scheduling of the pieces of materials. If the designated transmission and processing tasks of the pieces of materials are not completed, each of the scheduling rules for scheduling the pieces of materials according to real-time status information of the device are traversed, and according to a traversing result, operation instructions corresponding to the scheduling rules for scheduling the pieces of materials are executed. The real-time status information of the device is updated according to a device status after executions of the operation instructions are completed.

70. 发明授权

US11282680B2 Bearing device and plasma processing apparatus 有权
公开(公告)号：US11282680B2
公开(公告)日：2022-03-22
申请号：US15119658
申请日：2014-12-19
申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
发明人： Hao Guo , Peng Chen , Jue Hou
IPC分类号： H01J37/32 , C23C14/22 , C23C16/50 , H01L21/687 , C23C14/50 , H01J37/20
摘要： Embodiments of the invention provide a bearing device and a plasma processing apparatus. According to at least one embodiment, the bearing device includes a base, a base driving mechanism, a pressing ring and a baffle ring. The base is used for bearing a workpiece to be processed; the base driving mechanism is used for driving the base to move up to a process position or down to a loading and unloading position; the pressing ring is used for clamping an edge region of the workpiece to be processed on the base when the base is at the process position; the baffle ring surrounds an outer peripheral wall of the base and is located under the pressing ring; surfaces of the pressing ring and the baffle ring opposite to each other include a pair of guiding tori, which are inclined outwardly at a same angle with respect to a centerline of the base in a vertical direction; and, during the process of driving the base to move up by the base driving mechanism, the guiding tori contact and move toward each other, so as to achieve positioning of the pressing ring and the base.

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