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    • 66. 发明授权
    • SAS expander with non-blocking virtual phy architecture
    • 具有非阻塞虚拟体系结构的SAS扩展器
    • US09424218B1
    • 2016-08-23
    • US14148653
    • 2014-01-06
    • MAXIM Integrated Products, Inc.
    • Phillip W. RobertsGregory A. TaborKurt M. SchwemmerJohn M. AdamsArmando G. Benavidez
    • G06F13/00G06F13/40
    • G06F13/4022G06F2213/0028
    • A SAS expander includes a switch core, a number of SAS expander phys coupled to the switch core, an SMP originator coupled to the switch core and an SMP receptor coupled to the switch core. In an embodiment, the SMP originator is configured to only send connection requests and the SMP receptor is configured to only receive connection requests. Program instructions stored in non-transient digital storage media include code segments detecting a new connection request, code segments determining whether the new connection request is in conflict with an existing connection request and code segments determining if there is a free destination receptor phy. In an embodiment, the free destination receptor phy is never operationally used for an origination of a connection request.
    • SAS扩展器包括交换机核心,耦合到交换机核心的多个SAS扩展器物理,耦合到交换机核心的SMP发起者和耦合到交换机核心的SMP接收器。 在一个实施例中,SMP发起者被配置为仅发送连接请求,并且SMP接收器被配置为仅接收连接请求。 存储在非瞬时数字存储介质中的程序指令包括检测新连接请求的代码段,确定新连接请求是否与现有连接请求冲突的代码段以及确定是否存在空闲目的地受体phy的代码段。 在一个实施例中,自由目的地受体phy从不用于连接请求的发起。
    • 68. 发明授权
    • Method and apparatus for current sensing and measurement
    • 电流检测和测量方法和装置
    • US09195252B1
    • 2015-11-24
    • US13827181
    • 2013-03-14
    • MAXIM INTEGRATED PRODUCTS, INC.
    • Gabriel E. Tanase
    • G05F3/16G05F3/02
    • G05F3/262G05F3/02
    • A method and apparatus for current sensing and measurement employs two cascaded MOSFET current mirrors, wherein the mirrored current leaving the first current mirror is fed to the input of the second current mirror. Each current mirror contains a high current MOSFET and a low current MOSFET, connected source-to-source and gate-to-gate. The MOSFETs are matched so that drain-to-source current flowing in the high current MOSFET is proportional to the drain-to-source current flowing in the low current MOSFET. The ratio of high current to low current for each current mirror is M, where M is 100 or less. Voltage biasing networks are employed to maintain constant drain-to-source voltages for both MOSFETs in each current mirror.
    • 用于电流感测和测量的方法和装置使用两个级联MOSFET电流镜,其中离开第一电流镜的镜像电流被馈送到第二电流镜的输入端。 每个电流镜包含高电流MOSFET和低电流MOSFET,源到源和栅极到栅极连接。 MOSFET被匹配,使得在高电流MOSFET中流动的漏极 - 源极电流与在低电流MOSFET中流动的漏极 - 源极电流成比例。 每个电流镜的高电流与低电流的比值为M,其中M为100或更小。 采用电压偏置网络为每个电流镜中的两个MOSFET保持恒定的漏极 - 源极电压。