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71. 发明授权

US09078319B2 Conversion control circuit and converter thereof 有权
标题翻译：转换控制电路及其转换器
公开(公告)号：US09078319B2
公开(公告)日：2015-07-07
申请号：US13543881
申请日：2012-07-08
申请人： Ta-Ching Hsu
发明人： Ta-Ching Hsu
IPC分类号： H02M3/156 , H02M3/157 , H02M3/158 , H05B33/08 , H02M3/155
CPC分类号： H05B33/0818 , H02M3/155 , Y02B20/346
摘要： A conversion control circuit for controlling the operation of a power transistor is disclosed. The conversion control circuit includes a voltage-regulating switch and a control unit. One end of the voltage-regulating switch connects to an external voltage input terminal while another end connects to a voltage-regulating capacitor. The conversion control circuit converts an input voltage inputted from the external voltage input terminal into a power voltage. The power voltage is for supplying operating power to the conversion control circuit. The control unit receives a feedback voltage signal to generate a voltage-regulating pulse signal and a turn-on pulse signal, which are used for controlling the operations of the voltage-regulating switch and the power transistor, respectively and for defining a charging period for charging the voltage-regulating capacitor. A converter including the described conversion control circuit is also disclosed.
摘要翻译：公开了一种用于控制功率晶体管的操作的转换控制电路。转换控制电路包括电压调节开关和控制单元。电压调节开关的一端连接到外部电压输入端子，另一端连接电压调节电容器。转换控制电路将从外部电压输入端子输入的输入电压转换为电源电压。电源电压用于向转换控制电路提供工作电源。控制单元接收反馈电压信号以产生分别用于控制电压调节开关和功率晶体管的操作的电压调节脉冲信号和导通脉冲信号，并且用于定义用于对调压电容充电。还公开了包括所描述的转换控制电路的A转换器。

72. 发明申请

US20150180324A1 POWER CONVERSION APPARATUS AND CONTROL CHIP THEREOF 有权
标题翻译：电源转换装置及其控制芯片
公开(公告)号：US20150180324A1
公开(公告)日：2015-06-25
申请号：US14509053
申请日：2014-10-08
申请人： Ta-Ching Hsu , Chung-Ming Leng
发明人： Ta-Ching Hsu , Chung-Ming Leng
IPC分类号： H02M1/088 , H02M7/217 , H02M7/06
CPC分类号： H02M7/06 , H02M1/088 , H02M2001/322
摘要： A power conversion apparatus is provided. The power conversion apparatus receives an AC input power by an input side and includes a capacitor, an AC-to-DC conversion unit and a discharge unit. The capacitor is connected with the input side. The AC-to-DC conversion unit is coupled to the input side, and configured to convert the AC input power after receiving the AC input power to generate a DC output power. The discharge unit is coupled to the capacitor and has at least two switch elements. The discharge unit enables the at least two switch elements when supply of the AC input power is interrupted, such that one of a first discharge path and a second discharge path formed by the at least two switch elements is taken to discharge or drain the energy stored in the capacitor.
摘要翻译：提供电力转换装置。电力转换装置通过输入侧接收交流输入电力，并且包括电容器，AC-DC转换单元和放电单元。电容器与输入端连接。 AC到DC转换单元耦合到输入侧，并且被配置为在接收到AC输入功率之后转换AC输入功率以产生DC输出功率。放电单元耦合到电容器并且具有至少两个开关元件。当AC输入功率的供给被中断时，放电单元使能至少两个开关元件，使得由至少两个开关元件形成的第一放电路径和第二放电路径中的一个被采取放电或排出存储的能量在电容器中。

73. 发明授权

US08988910B2 Alternating-current conversion system having low power consumption bleeder circuit 有权
公开(公告)号：US08988910B2
公开(公告)日：2015-03-24
申请号：US13787354
申请日：2013-03-06
申请人： Niko Semiconductor Co., Ltd.
发明人： Ta-Ching Hsu
IPC分类号： H02M7/06 , H02M1/12 , H02M7/04 , H02M1/32
CPC分类号： H02M7/06 , H02M1/44 , H02M7/04 , H02M2001/322
摘要： A low power consumption bleeder circuit is disclosed, and it is coupled to an alternating-current (AC) power source, an input filtering capacitor, and a rectifying filter. The low power consumption bleeder circuit includes a first switch component, a second switch component, and a controller. The first switch component is coupled to a first input terminal of the AC power source and a first connection terminal of the rectifying filter. The second switch component is coupled to a second input terminal of the AC power source and the first connection terminal of the rectifying filter. When the AC power source is detected to be removed, the controller controls at least one of the first switch component and the second switch component to be conductive.

74. 发明授权

US08837184B2 Secondary side synchronous rectification control circuit and switching converter 有权
标题翻译：二次同步整流控制电路和开关变换器
公开(公告)号：US08837184B2
公开(公告)日：2014-09-16
申请号：US13459449
申请日：2012-04-30
申请人： Ta-Ching Hsu
发明人： Ta-Ching Hsu
IPC分类号： H03B19/03 , H02M1/08 , H02M3/335
CPC分类号： H02M1/08 , H02M3/33592 , Y02B70/1475
摘要： A secondary side synchronous rectification control circuit is disclosed. The control circuit includes an inverted amplifier, a first comparator, and a driving unit. The inverted amplifier has an input end for receiving a drain source voltage signal from a synchronous rectification transistor and outputting an inverted amplification signal. The first comparator receives the inverted amplification signal and a first reference voltage for outputting a first comparison signal. The driving unit receives the first comparison signal and generates a driving signal according to the first comparison signal, for controlling the conduction status of the synchronous rectification transistor. The drain source voltage of the synchronous rectification transistor in the present invention is inverted amplified by an inverted amplifier, and it is connected to a comparator for generating the driving signal. The errors and defects of the turn-off timing of the driving signal may be solved and eliminated.
摘要翻译：公开了一种二次侧同步整流控制电路。控制电路包括反相放大器，第一比较器和驱动单元。反相放大器具有用于从同步整流晶体管接收漏源电压信号并输出反相放大信号的输入端。第一比较器接收反相放大信号和用于输出第一比较信号的第一参考电压。驱动单元接收第一比较信号并根据第一比较信号产生用于控制同步整流晶体管的导通状态的驱动信号。本发明的同步整流晶体管的漏源电压由反相放大器反相放大，并连接到用于产生驱动信号的比较器。可以解决和消除驱动信号的关断定时的误差和缺陷。

75. 发明授权

US08730688B2 Flyback power converter with multiple outputs and a secondary side post regulator thereof 有权
标题翻译：具有多个输出的反激式功率转换器及其二次侧后调节器
公开(公告)号：US08730688B2
公开(公告)日：2014-05-20
申请号：US13153235
申请日：2011-06-03
申请人： Ta-Ching Hsu
发明人： Ta-Ching Hsu
IPC分类号： H02M3/335
CPC分类号： H02M3/33561 , H02M3/33592 , Y02B70/1475
摘要： A flyback power converter with multiple outputs is disclosed. The flyback power converter has a transformer, a first output circuit, a second output circuit, and a secondary side synchronous rectification controller. The transformer has a primary side winding, a first output winding, and a second output winding. The first output circuit has a first output capacitor for storing electric energy from the first output winding. The second output circuit has a second rectifying switch and a second output capacitor. The second output capacitor is utilized for storing the electric energy from the second output winding. The secondary side synchronous rectification controller controls the conduction time of the second rectifying switch according to a detecting signal of a secondary-side conduction period. The electric energy in the first output capacitor may be transferred to the second output capacitor through the second output winding and the second rectifying switch and vice versa.
摘要翻译：公开了具有多个输出的反激式功率转换器。反激式功率转换器具有变压器，第一输出电路，第二输出电路和次级侧同步整流控制器。变压器具有初级侧绕组，第一输出绕组和第二输出绕组。第一输出电路具有用于存储来自第一输出绕组的电能的第一输出电容器。第二输出电路具有第二整流开关和第二输出电容器。第二输出电容器用于存储来自第二输出绕组的电能。次级侧同步整流控制器根据次级侧导通期间的检测信号来控制第二整流开关的导通时间。第一输出电容器中的电能可以通过第二输出绕组和第二整流开关传递到第二输出电容器，反之亦然。

76. 发明授权

US08729632B2 Semiconductor structure with low resistance of substrate and low power consumption 有权
标题翻译：半导体结构具有低电阻的基板和低功耗
公开(公告)号：US08729632B2
公开(公告)日：2014-05-20
申请号：US13305771
申请日：2011-11-29
申请人： Hsiu Wen Hsu , Chih Cheng Hsieh
发明人： Hsiu Wen Hsu , Chih Cheng Hsieh
IPC分类号： H01L27/12
CPC分类号： H01L23/49562 , H01L23/3677 , H01L24/48 , H01L29/0657 , H01L29/41766 , H01L29/456 , H01L29/7395 , H01L29/7802 , H01L29/7809 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/1305 , H01L2924/13091 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor structure comprising a semiconductor unit, a first conductive structure, a first conductive plug, and a second conductive structure is provided. The semiconductor unit has a substrate on a first side of the semiconductor unit. The substrate has at least a hole. The first conductive plug is in the hole and the hole may be full of the conductive plug. The first conductive structure is on the surface of the semiconductor unit. The surface is at the first side of the semiconductor unit. The second conductive structure is on a surface at a second side of the substrate of the semiconductor unit.
摘要翻译：提供包括半导体单元，第一导电结构，第一导电插塞和第二导电结构的半导体结构。半导体单元在半导体单元的第一侧上具有基板。基板至少有一个孔。第一导电插头位于孔中，孔可能充满导电塞。第一导电结构在半导体单元的表面上。表面位于半导体单元的第一侧。第二导电结构在半导体单元的基板的第二侧的表面上。

77. 发明申请

US20140002038A1 MULTIPHASE DC-to-DC CONVERTER 有权
标题翻译：多相DC-DC转换器
公开(公告)号：US20140002038A1
公开(公告)日：2014-01-02
申请号：US13607803
申请日：2012-09-10
申请人： Ta-Ching HSU
发明人： Ta-Ching HSU
IPC分类号： G05F1/10
CPC分类号： H02M3/1584 , H02M2001/0009 , H02M2003/1586
摘要： A multiphase DC-to-DC converter is disclosed herein, which includes at least one DC-to-DC converting module. Each DC-to-DC converting module at least includes a first output inductor, a second output inductor and a current detector. The current detector is configured for detecting currents pass through the first output inductor and second output inductor. The current detector includes a first resistance, a second resistance, a first capacitor, a second capacitor, and a third resistance. The third resistance is directly or indirectly coupled between the first capacitor and a load circuit, and directly or indirectly coupled between the second capacitor and the load circuit, such that when the first capacitor is charged, a portion of the current charging the first capacitor passes through the second capacitor.
摘要翻译：本文公开了一种多相DC-DC转换器，其包括至少一个DC-DC转换模块。每个DC-DC转换模块至少包括第一输出电感器，第二输出电感器和电流检测器。电流检测器被配置用于检测通过第一输出电感器和第二输出电感器的电流。电流检测器包括第一电阻，第二电阻，第一电容，第二电容和第三电阻。第三电阻直接或间接耦合在第一电容器和负载电路之间，并且直接或间接耦合在第二电容器和负载电路之间，使得当第一电容器被充电时，对第一电容器充电的一部分电流通过通过第二个电容。

78. 发明授权

US08427073B2 LED driving circuit and backlight module 失效
标题翻译： LED驱动电路和背光模组
公开(公告)号：US08427073B2
公开(公告)日：2013-04-23
申请号：US12786823
申请日：2010-05-25
申请人： Wei Liang Kung , Chen-Hsung Wang , Shian-Sung Shiu
发明人： Wei Liang Kung , Chen-Hsung Wang , Shian-Sung Shiu
IPC分类号： H05B37/02
CPC分类号： G09G3/3406 , G09G2320/062 , G09G2320/0633 , H05B33/0827
摘要： A LED driving circuit and a backlight module using the same are disclosed. The LED driving circuit comprises a LED module and a current controlling unit. The LED module has a plurality of the LED strings, each having a driving terminal. The current controlling unit has a plurality of current balancing terminal coupled to the driving terminal, for balancing the currents flowing through the LED strings. The current controlling unit receives a mode switch signal, controls the amount of the currents of the LED strings about a first current value when the mode switch signal represent a first mode, and controls the amount of the currents of the LED strings about a second current value when the mode switch signal represent a second mode.
摘要翻译：公开了一种LED驱动电路和使用其的背光模块。 LED驱动电路包括LED模块和电流控制单元。 LED模块具有多个LED串，每个LED串具有驱动端子。电流控制单元具有耦合到驱动端子的多个电流平衡端子，用于平衡流过LED串的电流。电流控制单元接收模式切换信号，当模式切换信号表示第一模式时，控制LED串的电流量约为第一电流值，并且控制LED串的电流量约为第二电流当模式切换信号表示第二模式时的值。

79. 发明授权

US08093653B2 Trench metal oxide-semiconductor transistor and fabrication method thereof 有权
标题翻译：沟槽金属氧化物半导体晶体管及其制造方法
公开(公告)号：US08093653B2
公开(公告)日：2012-01-10
申请号：US12243406
申请日：2008-10-01
申请人： Kao-Way Tu , Cheng-Hui Tung , Hsiao-Wei Tsai
发明人： Kao-Way Tu , Cheng-Hui Tung , Hsiao-Wei Tsai
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/66727 , H01L29/66734
摘要： A fabrication method of a trench metal oxide-semiconductor (MOS) transistor is provided. After the gate trenches are formed in the epitaxial layer, impurities of a first conductive type are implanted into the epitaxial layer by using a blanket implantation process. A polysilicon pattern filling the gate trenches and covering a predetermined range of epitaxial layer surrounding the gate trenches is formed on the epitaxial layer. Impurities of a second conductive type are implanted through the polysilicon pattern into the epitaxial layer to form a well. Impurities of the first conductive type are implanted to form a plurality of first doping regions. A portion of the polysilicon layer above the upper surface of the epitaxial layer is removed by etching to form a plurality of polysilicon gates. Impurities in the first doping regions are driven in to form a plurality of source regions adjacent to the gate trenches.
摘要翻译：提供了一种沟槽金属氧化物半导体（MOS）晶体管的制造方法。在外延层中形成栅极沟槽之后，通过使用覆盖注入工艺将第一导电类型的杂质注入到外延层中。在外延层上形成填充栅极沟槽并覆盖围绕栅极沟槽的预定范围的外延层的多晶硅图案。第二导电类型的杂质通过多晶硅图案注入到外延层中以形成阱。第一导电类型的杂质被注入以形成多个第一掺杂区域。通过蚀刻去除外延层的上表面上方的多晶硅层的一部分，以形成多个多晶硅栅极。第一掺杂区域中的杂质被驱动以形成与栅极沟槽相邻的多个源极区域。

80. 发明授权

US08088662B2 Fabrication method of trenched metal-oxide-semiconductor device 失效
标题翻译：沟槽金属氧化物半导体器件的制造方法
公开(公告)号：US08088662B2
公开(公告)日：2012-01-03
申请号：US13149812
申请日：2011-05-31
申请人： Chun Ying Yeh
发明人： Chun Ying Yeh
IPC分类号： H01L21/336
CPC分类号： H01L21/26506 , H01L21/2822 , H01L29/42368 , H01L29/66734 , H01L29/7813
摘要： A fabrication method of a trenched metal-oxide-semiconductor device is provided. Firstly, an epitaxial layer is formed on a substrate. Then, a plurality of gate trenches is formed in the epitaxial layer. Afterward, a spacer is formed on the sidewall of the trench gates. The spacer is utilized as a mask to selectively implant oxygen ion into the bottom of the gate trenches so as to form a bottom oxide layer on the bottom of the gate trenches to reduce capacitance between gate and drain.
摘要翻译：提供了一种沟槽金属氧化物半导体器件的制造方法。首先，在基板上形成外延层。然后，在外延层中形成多个栅极沟槽。之后，在沟槽栅极的侧壁上形成间隔物。间隔物用作掩模以选择性地将氧离子注入到栅极沟槽的底部，以便在栅极沟槽的底部形成底部氧化物层，以减小栅极和漏极之间的电容。

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