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71. 发明申请

US20230130150A1 ENHANCEMENTS TO SUPPORT HST-SFN DEPLOYMENT SCENARIO 有权
公开(公告)号：US20230130150A1
公开(公告)日：2023-04-27
申请号：US17955492
申请日：2022-09-28
申请人： Samsung Electronics Co., Ltd.
发明人： Hoda SHAHMOHAMMADIAN , Jung Hyun BAE
IPC分类号： H04W72/231 , H04L5/00 , H04W72/12
摘要： A User Equipment is disclosed that determines a default Transmission Configuration Indicator (TCI) state in a wireless communication network in a High-Speed Train environment. The UE determines that wireless communication is being carried out in Frequency Range 2 and receives one or more Core Resource Sets (CORESETs) carrying a Physical Downlink Control Channel (PDCCH) with a Downlink Control Information (DCI); that a time offset between reception by the UE of the DCI and a corresponding Physical Downlink Shared Channel (PDSCH) is less than a predetermined time threshold; that the PDSCH is configured with a Single Frequency Network (SFN) scheme; that an option to enable two default TCI states for the UE is not configured; whether the PDCCH is configured with an SFN scheme; and based on a result of determining whether the PDCCH is configured with an SFN scheme, a default TCI state is determined for PDSCH reception.

72. 发明申请

US20230129937A1 ANTENNA AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
公开(公告)号：US20230129937A1
公开(公告)日：2023-04-27
申请号：US18145550
申请日：2022-12-22
申请人： Samsung Electronics Co., Ltd.
发明人： Youngsub KIM , Sohyeon JUNG , Kwanghyun BAEK , Youngju LEE , Juneseok LEE , Dohyuk HA
IPC分类号： H01Q21/00 , H01Q1/24 , H01Q1/48 , H01P3/08 , H01P1/26
摘要： An electronic device is provided. The electronic device includes a plurality of antenna arrays, a plurality of first printed circuit board (PCB) sets corresponding to the plurality of the antenna arrays, and a second PCB including a power interface, the second PCB may include a feeding line for delivering signals to the antenna elements, a first layer formed away from a first surface of the feeding line, and a second layer formed away from a second surface of the feeding line, and the second layer may include a metamaterial for transforming impedance.

73. 发明申请

US20230129921A1 SEMICONDUCTOR DEVICES AND MANUFACTURING METHODS FOR THE SAME 有权
公开(公告)号：US20230129921A1
公开(公告)日：2023-04-27
申请号：US17965860
申请日：2022-10-14
申请人： Samsung Electronics Co., Ltd.
发明人： Sunju KIM , Namsu KIM , Jinwon JEONG
IPC分类号： H01L27/108
摘要： A semiconductor device including a substrate having a cell array area, a peripheral circuit area, and a boundary area therebetween, gate electrodes in the cell array area and in a plurality of word line trenches extending to an inside of the substrate, a device isolation layer in the peripheral circuit area of the substrate and defining active areas, and a boundary structure in the boundary area and in a boundary trench extending to the inside of the substrate may be provided. The boundary structure may include a buried insulating layer on an inner wall of the boundary trench, an insulating liner on the buried insulating layer, and a gap-fill insulating layer filling an inside of the boundary trench on the insulating liner, and an upper surface of the insulating liner may be at a lower level than an upper surface of a corresponding one of the active area.

74. 发明申请

US20230129640A1 FOOD WASTE DISPOSER 有权
公开(公告)号：US20230129640A1
公开(公告)日：2023-04-27
申请号：US17894710
申请日：2022-08-24
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Qasim KHAN , Myoungkeun KWON , Sangjin KIM , Eungryeol SEO , Changhoon OH , Sangjin LEE
IPC分类号： B01D53/26 , B01D46/00 , B01D5/00 , B01D53/88 , B01D53/00 , B65F1/14
摘要： A food waste disposer including a housing, a container disposed inside the housing and provided to accommodate food waste, an exhaust duct communicating with the container and provided to allow exhaust gas generated in the container to flow therein, a filter device including a catalytic filter part configured to filter the exhaust gas passed through the exhaust duct, and a deodorizing filter part configured to filter the exhaust gas passed through the catalytic filter part and communicating with an outside of the housing, and a condensation chamber configured to remove moisture in the exhaust gas flowing from the exhaust duct into the catalytic filter part of the filter device.

75. 发明申请

US20230129484A1 APPARATUS AND METHOD FOR UTILIZING SEQUENCE-BASED PUCCH 有权
公开(公告)号：US20230129484A1
公开(公告)日：2023-04-27
申请号：US17950684
申请日：2022-09-22
申请人： Samsung Electronics Co., Ltd.
发明人： Jung Hyun BAE , Mohammed KARMOOSE
IPC分类号： H04W72/12
摘要： An system and a method are disclosed for sequence-based physical uplink control channels (PUCCHs). A method includes a UE determining an uplink control information (UCI) payload to be transmitted, determining, based on the UCI payload to be transmitted, a grouping of resource sets and sequences, each sequence corresponding to a resource set, selecting one or more resource sets and one or more sequences from among the determined grouping of resource sets and sequences, according to a mapping operation, for transmitting the UCI payload, and transmitting the selected one or more sequences as part of a UCI payload transmission.

76. 发明申请

US20230129233A1 SEMICONDUCTOR DEVICES 有权
公开(公告)号：US20230129233A1
公开(公告)日：2023-04-27
申请号：US18088550
申请日：2022-12-24
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Seungchan Yun , Donghwan Han
IPC分类号： H01L29/66 , H01L29/78
摘要： A semiconductor device including: a first structure including: a first semiconductor pattern protruding from a substrate, the first semiconductor pattern being a channel; a first conductive pattern surrounding the first semiconductor pattern, the first conductive pattern being a gate electrode; a first impurity region under the first semiconductor pattern, the first impurity region contacting the first semiconductor pattern, the first impurity region being a source or drain region; and a second impurity region contacting the first semiconductor pattern, the second impurity region being the other of the source or drain region; and a second structure including: second semiconductor patterns spaced apart from each other, each of the second semiconductor patterns protruding from the substrate; second conductive patterns surrounding the second semiconductor patterns, respectively; and first contact plugs connected to the second conductive patterns, wherein the first structure is a vfet, and the second structure includes a resistor or a capacitor.

77. 发明申请

US20230129083A1 GAS CYLINDER AUTOMATION SYSTEM 有权
公开(公告)号：US20230129083A1
公开(公告)日：2023-04-27
申请号：US17876064
申请日：2022-07-28
申请人： Samsung Electronics Co., Ltd.
发明人： Jinho SO , Kwangiun KIM , Chigun AN , Huigwan LEE , Hyungho CHOI , Junhyong LEE
IPC分类号： F17C13/02 , G01L5/00 , G01P15/00 , G01C9/00 , B66F9/06
摘要： A gas cylinder automation system may include: a transfer path automatically supply gas in a gas cylinder brought into the gas cylinder automation system to a semiconductor process line; and a cylinder-type sensor checking whether the transfer path is abnormal by moving along the transfer path, wherein the cylinder-type sensor includes: a cylinder head including an end cap fastening member and an end cap coupled to the end cap fastening member and having a first detecting sensor disposed on the end cap fastening member to detect one of a force or torque applied to the end cap and a cylinder body connected to the cylinder head and having a second detecting sensor including at least one of an acceleration sensor or an inclination sensor mounted thereon.

78. 发明申请

US20230128520A1 ELECTRONIC DEVICE AND METHOD FOR PROVIDING AUGMENTED REALITY 有权
公开(公告)号：US20230128520A1
公开(公告)日：2023-04-27
申请号：US18146257
申请日：2022-12-23
申请人： Samsung Electronics Co., Ltd.
发明人： Yeonhee RHO , Wonkyu PARK
IPC分类号： G06T19/00 , G06T19/20 , G06F3/01 , G06V10/74
摘要： An augmented reality (AR) device supporting AR is provided. The AR includes a memory in which data about at least one augmented reality element mapped to an AR space is stored, at least one sensor, a display, and a processor, wherein the memory may store instructions to allow the processor, upon execution, to provide, to a user screen through the display, augmented reality in which at least some of the at least one augmented reality element are output to a user's field of view (FOV) region, receive a first input by using the at least one sensor, and in response to the first input, display on the user screen a user interface in which relative positions of the at least one augmented reality element are displayed.

79. 发明申请

US20230128492A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20230128492A1
公开(公告)日：2023-04-27
申请号：US18049732
申请日：2022-10-26
申请人： Samsung Electronics Co., Ltd.
发明人： Seongkeun CHO , Hee Young Park , Jin Hyung Park , Kun Tack Lee , Jung Hyuk Jang , Chun Hyung Chung
IPC分类号： H01L27/108
摘要： There is provided a semiconductor memory device capable of improving the performance and/or the reliability of a device. The semiconductor memory device includes a substrate having a cell area and a peripheral area defined along a periphery of the cell area, wherein the cell area includes an active area defined by a cell element separation film, a cell area separation film in the substrate and defining the cell area, and a plurality of storage contacts connected to the active area, and arranged along a first direction. The plurality of storage contacts includes a first storage contact, a second storage contact, and a third storage contact, wherein the second storage contact is between the first storage contact and the third storage contact, each of the first storage contact and the third storage contact contains or surrounds or defines an airgap, and the second storage contact is free of an airgap.

80. 发明申请

US20230128273A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY MODULE COMPRISING SAME 有权
公开(公告)号：US20230128273A1
公开(公告)日：2023-04-27
申请号：US18086225
申请日：2022-12-21
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Donggun OH , Jinho Kim , Kisun Kang
IPC分类号： H01L33/62 , H01L25/075 , H01L33/38
摘要： A thin film transistor substrate and a display module comprising same are provided. The disclosed thin film transistor (TFT) substrate includes: a substrate; first and second inorganic insulating layers which are successively laminated on the substrate; a first metal layer which is formed between the first and second inorganic insulating layers; a second metal layer which is formed on the second inorganic insulating layer; first, second, and third organic insulating layers which are successively laminated on the second inorganic insulating layer; a third metal layer which is formed between the first and second organic insulating layers; and a fourth metal layer which is formed between the second and third organic insulating layers, wherein at least one of the second and third organic insulating layers is configured to absorb light..

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