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    • 71. 发明授权
    • Conductor film and its forming method
    • 导体薄膜及其成型方法
    • US5874174A
    • 1999-02-23
    • US693369
    • 1996-08-06
    • Akira OkudaHatsuhiko ShibasakiKenji MaruyamaTakashi TaninoYasuhiro Kobayashi
    • Akira OkudaHatsuhiko ShibasakiKenji MaruyamaTakashi TaninoYasuhiro Kobayashi
    • C03C17/40H05K3/38B32B17/06
    • H05K3/388C03C17/40Y10T428/12743
    • When forming a conductor film of Ag, Au, Cu, Al on a substrate of ceramics or glass, an adhesive layer of Cr, NiCr is formed on the substrate, a mixed layer of adhesive layer material and conductor film material is formed on the adhesive layer, and a conductor film is formed on the mixed layer. According to this method, even if film forming is conducted below the temperature for inducing diffusion on the interface of the conductor film and adhesive layer, for example, below 100.degree. C., an alloy layer of adhesive layer material and conductor film material is present on the interface of the adhesive layer and conductor film to be closer to bulk state, and the attraction between molecules is increased, so that the bonding strength of the conductor film and adhesive layer is enhanced. Therefore, at 100.degree. C. or more, a conductor film which hardly causes peeling may be formed on the substrate to be used in electronic components which vary in electric characteristics or on the film form substrate which deforms thermally.
    • 在陶瓷或玻璃的基板上形成Ag,Au,Cu,Al的导体膜时,在基板上形成Cr,NiCr的粘合层,在粘合剂上形成粘接层材料和导体膜材料的混合层 层,并且在混合层上形成导体膜。 根据该方法,即使在导体膜和粘合剂层的界面上引起扩散的温度以下进行成膜,例如低于100℃,也存在粘合剂层材料和导体膜材料的合金层 在粘合剂层和导体膜的界面上更接近体态,并且分子之间的吸引力增加,使得导体膜和粘合剂层的结合强度提高。 因此,在100℃以上的情况下,可以在用于电特性变化的电子部件的基板上,或在热变形的薄膜基板上形成难以剥离的导体膜。