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71. 发明授权

US07745079B2 Apparatus for and method of thermophoretic protection of an object in a high-vacuum environment 失效
标题翻译：高真空环境下物体热保护保护装置及方法
公开(公告)号：US07745079B2
公开(公告)日：2010-06-29
申请号：US11373398
申请日：2006-03-09
申请人： Derek Coon
发明人： Derek Coon
IPC分类号： G03C5/00 , G03B27/52 , F26B5/04
CPC分类号： G03F7/70933 , G03F7/70875 , G03F7/70916
摘要： Embodiments disclosed herein relate to an apparatus for and method of protecting a reticle in a lithography system from particle deposition using thermophoresis, but still allowing a high vacuum area for the photo-optics.
摘要翻译：本文公开的实施例涉及一种用于保护光刻系统中的掩模版的装置和方法，其不使用热泳法进行颗粒沉积，而是仍允许光学光学的高真空区域。

72. 发明授权

US07713678B2 Resist material and electron beam recording resist material 失效
标题翻译：抗蚀材料和电子束记录抗蚀材料
公开(公告)号：US07713678B2
公开(公告)日：2010-05-11
申请号：US11921327
申请日：2006-05-26
申请人： Yasuo Hosoda
发明人： Yasuo Hosoda
IPC分类号： G03C1/76 , G03C1/494 , G03C1/492 , G03C5/00
CPC分类号： G03F7/0043 , G03F7/2059
摘要： The invention mainly intends to provide a resist material that is high in the sensitivity to light and an electron beam and enables to form a clear and fine pattern with less exposure. In order to achieve the object, the invention provides a resist material comprising a metal compound, wherein a metal element constituting the metal compound is a 14th group or 15th group metal element and the metal compound is a stoichiometrically incomplete compound.
摘要翻译：本发明主要提供一种对光和电子束的灵敏度高的抗蚀剂材料，能够以较少的曝光形成清晰细致的图案。为了达到上述目的，本发明提供了包含金属化合物的抗蚀剂材料，其中构成金属化合物的金属元素是第14族或第15族金属元素，金属化合物是化学计量不完全的化合物。

73. 发明授权

US07712070B2 Method for transferring self-assembled dummy pattern to substrate 失效
标题翻译：将自组装虚拟图案转移到基板的方法
公开(公告)号：US07712070B2
公开(公告)日：2010-05-04
申请号：US11618775
申请日：2006-12-30
申请人： Jae In Moon
发明人： Jae In Moon
IPC分类号： G06F17/50 , G03F1/00 , G03C5/00
CPC分类号： H01L27/0207 , H01L27/105
摘要： A semiconductor device fabrication method is disclosed. The method includes obtaining an inverse layout of an original circuit layout, reducing the inverse layout in size, thereby obtaining a reduced layout, obtaining a dummy pattern layout having an outline identical to an outline of the reduced layout and a given line width such that the dummy pattern layout is self-assembled to the circuit layout, and transferring the self-aligned or self-assembled dummy pattern layout and circuit layout to a semiconductor substrate.
摘要翻译：公开了一种半导体器件制造方法。该方法包括获得原始电路布局的反向布局，减小尺寸上的反向布局，从而获得缩小的布局，获得具有与简化布局的轮廓相同的轮廓的虚拟图案布局和给定的线宽，使得虚拟图案布局自组装到电路布局，并将自对准或自组装的虚拟图案布局和电路布局传送到半导体衬底。

74. 发明授权

US07710539B2 Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device 有权
标题翻译：用于预测基板的热诱导变形的方法和装置以及半导体装置
公开(公告)号：US07710539B2
公开(公告)日：2010-05-04
申请号：US12257604
申请日：2008-10-24
申请人： Boris Menchtchikov , Frederik Eduard De Jong
发明人： Boris Menchtchikov , Frederik Eduard De Jong
IPC分类号： G03B27/68 , G03B27/42 , G03B27/54 , G03C5/00
CPC分类号： G03F7/70633 , G03F7/70341 , G03F7/70425 , G03F7/70783 , G03F7/70875
摘要： The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.
摘要翻译：本发明提供了一种用于校正光刻曝光的基底的热诱导场变形的方法。首先，提供模型来预测衬底的多个场的热诱导场变形信息。然后基于由模型预测的热诱导变形信息来修改用于配置场的曝光的预定曝光信息。最后，根据修改的预先指定的曝光信息，将图案暴露在场上。通过模型预测热诱导场变形信息包括预测基底上选定点的变形效应。它是基于时间衰减的特性，因为能量被传送到基板上; 以及所选择的点与衬底的边缘之间的距离。

75. 发明授权

US07695898B2 Photothermographic material and image formation method 失效
标题翻译：光热成像材料和成像方法
公开(公告)号：US07695898B2
公开(公告)日：2010-04-13
申请号：US12101032
申请日：2008-04-10
申请人： Makoto Ishihara
发明人： Makoto Ishihara
IPC分类号： G03C5/00 , G03C1/498
CPC分类号： G03C1/49881 , G03C1/30 , G03C1/32 , G03C1/49872 , G03C1/76 , G03C2001/7635 , G03C2200/39 , Y10S430/159 , Y10S430/162
摘要： Disclosed is a photothermographic material having an image-forming layer containing a silver salt of an organic acid, photosensitive silver halide grains and a reducing agent on a support, wherein ratio of scratch strength measured before heat development and scratch strength measured 30 minutes after the heat development is in the range of 1:1-1:3 for a surface of the image-forming layer side. The photothermographic material shows improved film strength after heat development.
摘要翻译：公开了一种光热敏成像材料，其具有包含有机酸的银盐，载体上的感光卤化银颗粒和还原剂的成像层，其中在热显影后测量的划痕强度和在热后30分钟测量的划痕强度的比率显影对于图像形成层侧的表面在1：1-1：3的范围内。光热照相材料在热显影后显示改善的膜强度。

76. 发明授权

US07691550B2 Method for making a relief printing form 失效
标题翻译：制作浮雕印花形式的方法
公开(公告)号：US07691550B2
公开(公告)日：2010-04-06
申请号：US11820718
申请日：2007-06-20
申请人： Steven Goldfarb
发明人： Steven Goldfarb
IPC分类号： G03C5/00
CPC分类号： G03F7/70625 , B41C1/055 , G03F7/2012 , Y10S430/143 , Y10S430/146
摘要： The invention provides a method for making a printing form having a relief surface on a floor from a photosensitive element. The method involves generating a polymerization rate curve for the photosensitive element from a step exposure test by measuring a cure response, such as floor thickness or one or more relief image characteristic/s, of the element relative to an energy density of a source of actinic radiation. The method exposes a photosensitive element to the source of actinic radiation based on energy density that accounts for changes in intensity of lamps used for the source of actinic radiation.
摘要翻译：本发明提供了一种用于制造在感光元件的地板上具有浮雕表面的印刷形式的方法。该方法包括通过测量元素相对于光化反应源的能量密度的固化响应（例如底板厚度或一个或多个浮雕图像特征/ s），从步骤曝光测试产生感光元件的聚合速率曲线辐射。该方法基于能量密度将光敏元件暴露于光化辐射源，其考虑了用于光化辐射源的灯的强度变化。

77. 发明授权

US07676078B2 Inspection method, processor and method for manufacturing a semiconductor device 失效
标题翻译：用于制造半导体器件的检查方法，处理器和方法
公开(公告)号：US07676078B2
公开(公告)日：2010-03-09
申请号：US10776591
申请日：2004-02-12
申请人： Kazuya Fukuhara
发明人： Kazuya Fukuhara
IPC分类号： G06K9/00 , G01B11/00 , H01L21/00 , G03C5/00
CPC分类号： G03F7/70133 , G01N21/95607 , G03F7/70591 , G03F7/70616
摘要： An inspection method for an illumination optical system of an exposure tool includes coating a surface of an exposure target substrate with a resist film; placing a plurality of imaging components deviating from an optical conjugate plane of a surface of the resist film; generating a plurality of inspection patterns of the resist film having a plurality of openings, by projecting exposure beams output from a plurality of effective light sources onto the resist film via the imaging components; measuring one of the inspection patterns as a reference image, and processing the reference image so as to provide reference image data; and determining an abnormal inspection image by measuring inspection images of the inspection patterns and comparing a plurality of inspection image data provided by processing the inspection images with the reference image data.
摘要翻译：曝光工具的照明光学系统的检查方法包括用抗蚀剂膜涂覆曝光对象基板的表面; 放置偏离抗蚀膜的表面的光共轭面的多个成像组件; 通过经由成像部件将从多个有效光源输出的曝光光束投影到抗蚀剂膜上，产生具有多个开口的抗蚀剂膜的多个检查图案; 测量所述检查图案之一作为参考图像，并处理所述参考图像以便提供参考图像数据; 以及通过测量所述检查图案的检查图像并将通过处理所述检查图像而提供的多个检查图像数据与所述参考图像数据进行比较来确定异常检查图像。

78. 发明授权

US07655368B2 Method for exposing a substrate and lithographic projection apparatus 有权
公开(公告)号：US07655368B2
公开(公告)日：2010-02-02
申请号：US10936727
申请日：2004-09-09
申请人： Jozef Maria Finders , Judocus Marie Dominicus Stoeldraijer , Johannes Wilhelmus De Klerk
发明人： Jozef Maria Finders , Judocus Marie Dominicus Stoeldraijer , Johannes Wilhelmus De Klerk
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： G03F7/70333 , G03F7/70425
摘要： A method for exposing a resist layer on a substrate to an image of a pattern on a mask is disclosed whereby, after starting exposure and before completing exposure, a controlled amount of contrast loss is introduced by a controller in the image at the resist layer by changing during exposure the position of the substrate holder. The contrast loss affects the pitch dependency of the resolution of a lithographic projection apparatus, and its control is used to match pitch dependency of resolution between different lithographic projection apparatus.

79. 发明授权

US07652758B2 Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems 有权
标题翻译：执行抗蚀剂工艺校准/优化和DOE优化的方法，以提供不同光刻系统之间的OPE匹配
公开(公告)号：US07652758B2
公开(公告)日：2010-01-26
申请号：US11503188
申请日：2006-08-14
申请人： SangBong Park , Jang Fung Chen , Armin Liebchen
发明人： SangBong Park , Jang Fung Chen , Armin Liebchen
IPC分类号： G01B9/00 , G03B27/32 , G03C5/00
CPC分类号： G03F7/70458 , G03F7/70108 , G03F7/705 , G03F7/70525
摘要： A method of optimizing a process for use with a plurality of lithography systems. The method includes the steps of: (a) determining a calibrated resist model for a given process and a target pattern utilizing a first lithography system; (b) selecting a second lithography system to be utilized to image the target pattern utilizing the given process, the second lithography system capable of being configured with one of a plurality of diffractive optical elements, each of the plurality of diffractive optical elements having corresponding variable parameters for optimizing performance of the given diffractive optical element; (c) selecting one of the plurality of diffractive optical elements and simulating the imaging performance of the second lithography system utilizing the selected one of the plurality of diffractive optical elements, the calibrated resist model and the target pattern; and (d) optimizing the imaging performance of the selected one of the plurality of diffractive optical elements by executing a genetic algorithm which identifies the values of the parameters of the selected one of the plurality of diffractive optical elements that optimizes the imaging of the target pattern.
摘要翻译：一种优化用于多个光刻系统的工艺的方法。该方法包括以下步骤：（a）使用第一光刻系统确定用于给定过程的校准抗蚀剂模型和目标图案; （b）选择待利用的第二光刻系统，以利用所述给定的处理对所述目标图案进行成像，所述第二光刻系统能够被配置为具有多个衍射光学元件中的一个衍射光学元件，所述多个衍射光学元件中的每一个具有对应的变量用于优化给定衍射光学元件的性能的参数; （c）选择多个衍射光学元件中的一个并利用所选择的多个衍射光学元件中的所选择的一个衍射光学元件，校准的抗蚀剂模型和目标图案来模拟第二光刻系统的成像性能; 以及（d）通过执行遗传算法来优化所述多个衍射光学元件中所选择的一个衍射光学元件的成像性能，所述遗传算法识别所述多个衍射光学元件中所选择的一个的参数的值，其优化所述目标图案的成像。

80. 发明授权

US07630052B2 Exposure processing system, exposure processing method and method for manufacturing a semiconductor device 失效
标题翻译：曝光处理系统，曝光处理方法以及半导体装置的制造方法
公开(公告)号：US07630052B2
公开(公告)日：2009-12-08
申请号：US11024322
申请日：2004-12-29
申请人： Takuya Kono , Nobuhiro Komine , Tatsuhiko Higashiki , Shoichi Harakawa , Makato Ikeda
发明人： Takuya Kono , Nobuhiro Komine , Tatsuhiko Higashiki , Shoichi Harakawa , Makato Ikeda
IPC分类号： G03B27/32 , G03B27/54 , G03D5/00 , G03C5/00 , H01L21/00
CPC分类号： H01L21/67253
摘要： An exposure processing system comprises an exposure apparatus to expose a resist on a wafer, a heating apparatus comprising heating apparatus units, the heating apparatus heating the exposed resist by a heating apparatus unit in the heating apparatus units, a developing apparatus comprising developing apparatus units, the developing apparatus developing the exposed and heated resist by a developing apparatus unit in the developing apparatus units, and a control apparatus to control the exposure apparatus by using correction data so that a wafer on process object being exposed, the correction data being data for correcting a dimensional dispersion of a resist pattern caused by a pair of heating apparatus unit and developing apparatus unit used for the wafer on the process object, the pair of heating and developing apparatus unit comprising a heating and developing apparatus unit in the heating and developing apparatus used for the wafer on the process object.
摘要翻译：曝光处理系统包括：曝光装置，用于在晶片上曝光抗蚀剂，加热装置包括加热装置单元，加热装置通过加热装置单元中的加热装置加热曝光的抗蚀剂;显影装置，包括显影装置单元，显影装置通过显影装置单元中的显影装置单元显影曝光和加热的抗蚀剂;以及控制装置，通过使用校正数据来控制曝光装置，使得处理对象被曝光的晶片，校正数据是用于校正的数据由一对加热装置单元和用于处理对象上的晶片的显影装置单元引起的抗蚀剂图案的尺寸分散，所述一对加热显影装置单元包括使用的加热和显影装置中的加热和显影装置单元用于处理对象上的晶圆。

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