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81. 发明申请

US20160118240A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20160118240A1
公开(公告)日：2016-04-28
申请号：US14989462
申请日：2016-01-06
申请人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
发明人： Tsutomu Komatani
IPC分类号： H01L21/02 , H01L29/66
CPC分类号： H01L21/0217 , H01L21/02164 , H01L21/02178 , H01L21/0228 , H01L29/42316 , H01L29/475 , H01L29/66462 , H01L29/66924 , H01L29/7787
摘要： A method for fabricating a semiconductor device includes: forming a first film on a nitride semiconductor layer so as to contact the nitride semiconductor layer and have a thickness equal to or larger than 1 nm and equal to or smaller than 5 nm, the first film being made of silicon nitride having a composition ratio of silicon to nitrogen larger than 0.75, silicon oxide having a composition ratio of silicon to oxygen larger than 0.5, or aluminum; and forming a source electrode, a gate electrode and a drain electrode on the nitride semiconductor layer.

82. 发明授权

US09325153B2 Method to control transmitter optical module 有权
标题翻译：控制发射机光模块的方法
公开(公告)号：US09325153B2
公开(公告)日：2016-04-26
申请号：US14465615
申请日：2014-08-21
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Kenji Otobe , Kenichi Nakayama
IPC分类号： H04B10/564 , H01S5/0683 , H01S5/068
CPC分类号： H01S5/0683 , H01S5/06804 , H01S5/06808
摘要： An optical module capable of monitoring an inner temperature thereof by a simple arrangement is disclosed. The optical module installs an avalanche photodiode (APD). The APD generates the first photocurrent under a bias where the APD shows the multiplication factor thereof M equal to the unity, and the second photocurrent under another bias where the multiplication factor becomes greater than the unity. The operating temperature of the laser diode (LD) may be estimated from a ratio of the first photocurrent to the second photocurrent.
摘要翻译：公开了一种能够通过简单的配置监视其内部温度的光学模块。光学模块安装雪崩光电二极管（APD）。 APD在偏置下产生第一光电流，其中APD显示其乘法因子M等于单位，而第二光电流在倍增因子变得大于单位的另一偏压下产生。激光二极管（LD）的工作温度可以从第一光电流与第二光电流的比率估计。

83. 发明授权

US09281370B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09281370B2
公开(公告)日：2016-03-08
申请号：US14318064
申请日：2014-06-27
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Masahiro Nishi
IPC分类号： H01L21/338 , H01L29/45 , H01L21/285 , H01L29/417 , H01L29/423 , H01L29/66 , H01L29/20
CPC分类号： H01L29/452 , H01L21/02389 , H01L21/283 , H01L21/28575 , H01L21/28587 , H01L21/30604 , H01L21/32133 , H01L21/324 , H01L21/3245 , H01L21/768 , H01L29/2003 , H01L29/41733 , H01L29/42312 , H01L29/66462
摘要： A manufacturing method according to an embodiment of this invention is a method of manufacturing a semiconductor device, which has: a first step of forming a first electrode 22 containing Ti or Ta on a top face of a nitride semiconductor layer 18; a second step of forming a second electrode 24 containing Al on a top face of the first electrode 22; a third step of forming a coating metal layer 26 covering at least one of an edge of a top face of the second electrode 24 and a side face of the second electrode 24, having a window 26a exposing the top face of the second electrode 24 in a region separated from the foregoing edge, and containing at least one of Ta, Mo, Pd, Ni, and Ti; and a step of performing a thermal treatment, after the third step.
摘要翻译：根据本发明的实施例的制造方法是制造半导体器件的方法，其具有：在氮化物半导体层18的顶面上形成包含Ti或Ta的第一电极22的第一步骤; 在第一电极22的顶面上形成包含Al的第二电极24的第二步骤; 形成覆盖第二电极24的顶面的边缘和第二电极24的侧面中的至少一个的涂覆金属层26的第三步骤，具有将第二电极24的顶面露出的窗口26a 与前述边缘分离并含有Ta，Mo，Pd，Ni和Ti中的至少一种的区域; 以及在第三步骤之后进行热处理的步骤。

84. 发明授权

US09279848B2 Test apparatus 有权
标题翻译：测试仪器
公开(公告)号：US09279848B2
公开(公告)日：2016-03-08
申请号：US14466719
申请日：2014-08-22
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Haruyoshi Ono , Isao Baba
IPC分类号： G01M11/02 , G01R31/26 , H01S5/00
CPC分类号： G01R31/2635 , G01M11/0207 , H01S5/0014
摘要： Disclosed is a test apparatus including: test target sections each having a connector to connect a Device Under the Test (DUT); measuring sections that include measuring devices that have same measuring item respectively; a switch section that switches connection between the test target section and the measuring section under direction of a controller; wherein the controller selects one of the algorithms of connection, 1) searching vacancy of the measuring sections and directs the switch section to make a path between the test target section and the measuring section of vacancy, 2) holding the path that former selected.
摘要翻译：公开了一种测试装置，包括：测试目标部分，每个测试目标部分具有用于连接被测设备（DUT）的连接器; 测量部分包括分别具有相同测量项目的测量装置; 开关部，其在控制器的方向上切换所述测试对象部与所述测量部之间的连接; 其中所述控制器选择所述连接算法之一，1）搜索所述测量部分的空位并引导所述切换部分在所述测试目标部分与所述测量部分之间建立空位，2）保持所选择的路径。

85. 发明申请

US20160066425A1 FLEXIBLE PRINTED CIRCUIT (FPC) BOARD 审中-公开
标题翻译：柔性印刷电路板（FPC）
公开(公告)号：US20160066425A1
公开(公告)日：2016-03-03
申请号：US14839109
申请日：2015-08-28
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Shinya IIZAKA
IPC分类号： H05K1/14 , H05K1/11 , H05K3/36 , H05K1/02
CPC分类号： H05K3/363 , H05K1/0281 , H05K1/113 , H05K1/118 , H05K1/147 , H05K2201/09563
摘要： A flexible printed circuit (FPC) board having reinforcing pattern against bending is disclosed. The FPC board provides an RF interconnection extending from an RF electrode. Two ground electrodes are formed in respective sides of the RF electrode. The ground electrodes extend respective extended portions along the RF interconnection to protect the RF interconnection from breakage due to bending of the FPC board. The extended portion provides an end portion bent toward the RF interconnection to compensate for impedance mismatching of the RF interconnection.
摘要翻译：公开了一种具有抗弯曲加强图案的柔性印刷电路板（FPC）板。 FPC板提供从RF电极延伸的RF互连。两个接地电极形成在RF电极的相应侧面。接地电极沿着RF互连延伸各自的延伸部分，以保护RF互连免受FPC基板的弯曲破坏。延伸部分提供朝向RF互连弯曲的端部，以补偿RF互连的阻抗失配。

86. 发明申请

US20160056604A1 METHOD TO TUNE EMISSION WAVELENGTH OF WAVELENGTH TUNABLE LASER APPARATUS AND LASER APPARATUS 有权
标题翻译：调节波长激光装置和激光装置的排放波长的方法
公开(公告)号：US20160056604A1
公开(公告)日：2016-02-25
申请号：US14830585
申请日：2015-08-19
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Hirokazu TANAKA , Tetsufumi ODAGAWA , Hiromitsu KAWAMURA , Masao SHIBATA
IPC分类号： H01S3/10 , H01S3/23 , H01S3/0941
CPC分类号： H01S5/06256 , H01S5/0265 , H01S5/06258 , H01S5/06817 , H01S5/0683 , H01S5/0687
摘要： A method to tune an emission wavelength of a wavelength tunable laser apparatus is disclosed. The laser apparatus implements, in addition to a wavelength tunable laser diode (t-LD) integrating with a semiconductor optical amplifier (SOA), a wavelength monitor including an etalon filter. The current emission wavelength is determined by a ratio of the magnitude of a filtered beam passing the etalon filter to a raw beam not passing the etalon fitter. The method first sets the SOA in an absorbing mode to sense stray component disturbing the wavelength monitor, then correct the ratio of the beams by subtracting the contribution from the stray component.
摘要翻译：公开了调节波长可调激光装置的发射波长的方法。除了与半导体光放大器（SOA）集成的波长可调激光二极管（t-LD）之外，激光装置还实现了包括标准具滤波器的波长监视器。电流发射波长由通过标准具滤波器的滤波光束的大小与未通过标准具钳工的原始光束的比值确定。该方法首先将SOA设置为吸收模式，以感测干扰波长监测器的杂散分量，然后通过减去杂散分量的贡献来校正波束的比率。

87. 发明申请

US20160013616A1 OPTICAL MODULE INSTALLING A SEMICONDUCTOR OPTICAL AMPLIFIER AND PROCESS TO ASSEMBLE THE SAME 有权
标题翻译：安装半导体光放大器的光学模块及其组装方法
公开(公告)号：US20160013616A1
公开(公告)日：2016-01-14
申请号：US14794387
申请日：2015-07-08
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Yasuyuki YAMAUCHI
IPC分类号： H01S5/022 , H01S5/00 , G02F1/095 , G02B6/42
CPC分类号： H01S5/02284 , G02B6/32 , G02B6/36 , G02B6/4206 , G02B6/4208 , G02B6/421 , G02B6/4225 , G02B6/4237 , G02B6/4238 , G02B6/4244 , G02B6/4262 , G02B6/4278 , H01S5/02216 , H01S5/02248 , H01S5/02438 , H01S5/3434 , H01S5/50
摘要： An optical module providing a semiconductor optical amplifier (SOA), and a process to assembly the optical module are disclosed. The optical module provides front and rear coupling units each optically coupled with the SOA and fixed to the housing enclosing the SOA. The housing has a slim wall fixing a lens holder soldered to the slim wall. The front and/or rear coupling unit is fixed to the lens holder by YAG laser welding after the active alignment by using a spontaneous emission of the SOA, and amplified emission of externally provided test beam.
摘要翻译：公开了提供半导体光放大器（SOA）的光学模块以及组装光学模块的过程。光学模块提供前后耦合单元，每个耦合单元与SOA光学耦合并固定到封装SOA的壳体。外壳有一个细长的墙壁，固定一个焊接到苗条墙的透镜保持架。通过使用自发发射的SOA进行有源对准之后，通过YAG激光焊接将前耦合单元和/或后耦合单元固定到透镜架，并且放大外部提供的测试光束。

88. 发明申请

US20150349490A1 SEMICONDUCTOR LASER DIODE 有权
标题翻译：半导体激光二极管
公开(公告)号：US20150349490A1
公开(公告)日：2015-12-03
申请号：US14727426
申请日：2015-06-01
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Toshiyuki TAGUCHI
IPC分类号： H01S5/062 , H01S5/042 , H01S5/22 , H01S5/343 , H01S5/20
CPC分类号： H01S5/062 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0427 , H01S5/06213 , H01S5/2031 , H01S5/22 , H01S5/3434
摘要： A semiconductor laser diode is disclosed. The semiconductor laser diode including a primary surface constituted by two short sides and two long sides, comprises: an active layer; an electrode provided above the active layer; a first pad connected to the electrode; a second pad connected to the first pad; an inner interconnection configured to connect the electrode to the first pad electrically, the inner interconnection being provided along the long sides; and an outer interconnection configured to connect the first pad to the second pad electrically, the outer interconnection being provided along the long sides, the outer interconnection having a width along the short sides narrower than a width of the first pad along the short sides and a width of the second pad along the short sides. The active layer, the first pad, and the second pad are arranged along the long sides.
摘要翻译：公开了半导体激光二极管。包括由两个短边和两个长边构成的主表面的半导体激光二极管包括：有源层; 设置在有源层上方的电极; 连接到电极的第一焊盘; 连接到第一垫的第二垫; 内部互连，其被配置为将电极与第一焊盘电连接，内部互连沿着长边设置; 以及外部互连，其被配置为将所述第一焊盘电连接到所述第二焊盘，所述外部互连沿着所述长边设置，所述外部互连具有沿着所述短边窄于所述第一焊盘的宽度的短边的宽度，以及第二垫沿着短边的宽度。有源层，第一焊盘和第二焊盘沿着长边布置。

89. 发明申请

US20150279722A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150279722A1
公开(公告)日：2015-10-01
申请号：US14673039
申请日：2015-03-30
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Ken KIKUCHI
IPC分类号： H01L21/765 , H01L29/40 , H01L29/778 , H01L21/283
CPC分类号： H01L21/765 , H01L29/0843 , H01L29/2003 , H01L29/401 , H01L29/402 , H01L29/404 , H01L29/42316 , H01L29/778 , H01L29/7787
摘要： A method of manufacturing a semiconductor device includes processes of forming a gate electrode, a source electrode, and a drain electrode on a nitride semiconductor layer, forming an insulating film including, on a surface thereof, a step that covers the gate electrode and reflects a shape of the gate electrode, and a flat portion, forming a mask on the insulating film, forming an opening in the mask, the opening including a shape in which a side surface of the step is located on an inner side of the opening and an upper surface end portion of the gate electrode is located on an outer side of the opening, and having an overhang shape extending in a depth direction, and forming a field plate extending from a side surface of the step to the flat portion using the mask.
摘要翻译：一种制造半导体器件的方法包括在氮化物半导体层上形成栅电极，源电极和漏电极的工艺，形成绝缘膜，该绝缘膜在其表面上包括覆盖栅电极的步骤，形成栅电极，平坦部分，在绝缘膜上形成掩模，在掩模中形成开口，该开口包括台阶侧表面位于开口内侧的形状，栅电极的上表面端部位于开口的外侧，并具有沿深度方向延伸的突出形状，并且使用掩模形成从台阶的侧表面延伸到平坦部的场板。

90. 发明授权

US09130083B2 Semiconductor light receiving device and light receiving apparatus 有权
标题翻译：半导体光接收装置和光接收装置
公开(公告)号：US09130083B2
公开(公告)日：2015-09-08
申请号：US14072463
申请日：2013-11-05
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
发明人： Yoshihiro Yoneda , Takuya Fujii , Tooru Uchida
IPC分类号： H01L31/10 , H01L31/0304 , H01L31/109 , H01L31/103
CPC分类号： H01L31/03042 , H01L31/02327 , H01L31/0304 , H01L31/03046 , H01L31/1035 , H01L31/109 , H01L31/184
摘要： A semiconductor light receiving device includes a substrate having an incident surface receiving light incident on the semiconductor light receiving device and a principal surface opposite to the incident surface; a first semiconductor layer disposed on the principal surface of the substrate, the first semiconductor layer defining one of a cathode region and an anode region; a light absorbing region disposed on the first semiconductor layer; and a second semiconductor layer disposed on the light absorbing region, the second semiconductor layer defining the other of the cathode region and the anode region and forming a junction with the light absorbing region. The light absorbing region includes a semiconductor layer having a conductivity type opposite to the conductivity type of the first semiconductor layer. The semiconductor layer of the light absorbing region forms a p-n junction with the first semiconductor layer.
摘要翻译：半导体光接收装置包括具有入射在半导体光接收装置上的入射表面的入射表面和与入射表面相对的主表面的基板; 设置在所述基板的主表面上的第一半导体层，所述第一半导体层限定阴极区域和阳极区域中的一个; 设置在所述第一半导体层上的光吸收区域; 以及设置在所述光吸收区域上的第二半导体层，所述第二半导体层限定所述阴极区域和所述阳极区域中的另一个，并与所述光吸收区域形成结。光吸收区域包括具有与第一半导体层的导电类型相反的导电类型的半导体层。光吸收区的半导体层与第一半导体层形成p-n结。

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