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    • 84. 发明申请
    • IMPROVED PRODUCTION OF ANTI-PEPTIDE ANTIBODIES
    • 改进生产抗肽抗体
    • US20140046035A1
    • 2014-02-13
    • US13990344
    • 2011-11-29
    • Joseph KrebsPaul MorrisonJun Wang
    • Joseph KrebsPaul MorrisonJun Wang
    • C07K14/195C12N9/02
    • C07K14/195A61K2039/6031A61K2039/6043C07K14/245C07K16/00C07K16/40C07K2319/00C12N9/0008C12N15/62
    • Anti-peptide antibodies (APAs) are extremely important tools for biomedical research. Many important techniques, such as immunoblots, ELISA immunoassays, immunocytochemistry, and protein microarrays are intrinsically linked to APA function and completely dependent on APA quality. Unfortunately, not all commercially-available APAs have good antigen binding characteristics; as a result, researchers are often unable to perform high quality protein analysis experiments. This disclosure describes a new method for the scalable production of polyclonal APAs using recombinant antigens. These recombinant peptide antigens have several advantages over traditional peptide antigens which improve the ease and speed of antibody production. The recombinant antigens can be scalably produced and purified much faster than traditional synthetic peptide-conjugates. These recombinant antigen-carriers are designed to specifically aggregate in vivo after administration into the host; this aggregation greatly enhances immunogenicity and may eliminate the need for the use of chemical adjuvants which cause physical irritation and discomfort to the host.
    • 抗肽抗体(APAs)是生物医学研究的重要工具。 许多重要的技术,如免疫印迹,ELISA免疫测定,免疫细胞化学和蛋白质微阵列与APA功能本质上相关,完全依赖于APA质量。 不幸的是,并非所有商业上可获得的APA具有良好的抗原结合特征; 因此,研究人员往往无法进行高质量的蛋白质分析实验。 本公开描述了使用重组抗原可扩展生产多克隆APA的新方法。 这些重组肽抗原与传统的肽抗原相比具有几个优点,其提高抗体生产的容易性和速度。 重组抗原可以比传统的合成肽缀合物更快地产生和纯化。 这些重组抗原载体被设计为在给予宿主后在体内特异性聚集; 这种聚集大大增强免疫原性,并且可以消除使用引起身体对主体的刺激和不适的化学助剂的需要。
    • 85. 发明授权
    • Installing and executing shared applications in shared folders
    • 在共享文件夹中安装和执行共享应用程序
    • US08645940B2
    • 2014-02-04
    • US13204475
    • 2011-08-05
    • Guohong XieBoon-Lock YeoGangJiang LiJun Wang
    • Guohong XieBoon-Lock YeoGangJiang LiJun Wang
    • G06F9/44
    • G06F8/61G06F2209/549
    • Provided are a method, system, and program for installing and executing shared applications in shared folders. A program is installed by a base computer, having a local storage, to a shared folder accessible to multiple client computers over a network. Installing the program adds files for the program to the shared folder and modifies the local device used by the base computer and enables the base computer to run the program by accessing the program files in the shared folder. An image is created of the local device of the base computer including the installed program. The image is provided to the client computers to apply to local devices of the client computers. Applying the image to the local devices of the client computers enables the client computers to access the program files in the shared folder to run the program.
    • 提供了一种用于在共享文件夹中安装和执行共享应用程序的方法,系统和程序。 由具有本地存储器的基本计算机将程序安装到通过网络可访问多个客户端计算机的共享文件夹。 安装程序将程序的文件添加到共享文件夹,并修改基本计算机使用的本地设备,并使基本计算机通过访问共享文件夹中的程序文​​件来运行程序。 创建包括安装程序在内的基本计算机的本地设备的映像。 图像被提供给客户端计算机以应用于客户端计算机的本地设备。 将映像应用到客户端计算机的本地设备可使客户端计算机访问共享文件夹中的程序文​​件以运行程序。
    • 87. 发明申请
    • MANUFACTURING METHOD OF ARRAY SUBSTRATE, ARRAY SUBSTRATE AND LCD DEVICE
    • 阵列基板,阵列基板和液晶显示装置的制造方法
    • US20140001475A1
    • 2014-01-02
    • US13579068
    • 2012-07-12
    • Jun Wang
    • Jun Wang
    • G03F7/20H01L29/786H01L33/16H01L21/336
    • H01L29/66765H01L27/1288H01L29/41733
    • A manufacturing method of the array substrate includes the steps: A. A first mask manufacturing process is adopted to from scan lines and thin film transistor (TFT) gates on a surface of a substrate. B. A second mask manufacturing process is adopted to form scan lines and data lines of the array substrate, a source electrode and a drain electrode of TFT and a conducting channel positioned between the source electrode and the drain electrode. C. A photoresistor formed in the second mask manufacturing process is incinerated, and then, an a-Si film is paved on the surface of the array substrate. D. The photoresistor is stripped to form an undoped active layer. E. A third mask manufacturing process is adopted to form a transparent conducting layer on the surface of the drain electrode of the TFT. Only three mask manufacturing process in the present disclosure are needed to manufacture the entire array substrate.
    • 阵列基板的制造方法包括以下步骤:A.从基板表面的扫描线和薄膜晶体管(TFT)栅极采用第一掩模制造工艺。 B.采用第二掩模制造工艺来形成阵列基板的扫描线和数据线,TFT的源电极和漏电极以及位于源电极和漏电极之间的导电沟道。 C.在第二掩模制造工艺中形成的光致抗蚀剂被焚烧,然后在阵列基板的表面上铺设a-Si膜。 D.剥离光致抗蚀剂以形成未掺杂的活性层。 E.采用第三掩模制造工艺在TFT的漏电极的表面上形成透明导电层。 在本公开中仅需要三个掩模制造工艺来制造整个阵列基板。
    • 88. 发明授权
    • Power MOSFET with integrated gate resistor and diode-connected MOSFET
    • 功率MOSFET集成栅极电阻和二极管连接的MOSFET
    • US08614480B2
    • 2013-12-24
    • US13540862
    • 2012-07-03
    • Jun WangShuming XuJacek Korec
    • Jun WangShuming XuJacek Korec
    • H01L29/66
    • H01L27/0629H01L27/0727H01L29/1083H01L29/402H01L29/4175H01L29/41766H01L29/456H01L29/66659H01L29/7835H01L29/861
    • A power MOSFET is formed in a semiconductor device with a parallel combination of a shunt resistor and a diode-connected MOSFET between a gate input node of the semiconductor device and a gate of the power MOSFET. A gate of the diode-connected MOSFET is connected to the gate of the power MOSFET. Source and drain nodes of the diode-connected MOSFET are connected to a source node of the power MOSFET through diodes. The drain node of the diode-connected MOSFET is connected to the gate input node of the semiconductor device. The source node of the diode-connected MOSFET is connected to the gate of the power MOSFET. The power MOSFET and the diode-connected MOSFET are integrated into the substrate of the semiconductor device so that the diode-connected MOSFET source and drain nodes are electrically isolated from the power MOSFET source node through a pn junction.
    • 在半导体器件的栅极输入节点和功率MOSFET的栅极之间,在半导体器件中形成并联组合的分流电阻器和二极管连接的MOSFET的功率MOSFET。 二极管连接的MOSFET的栅极连接到功率MOSFET的栅极。 二极管连接的MOSFET的源极和漏极节点通过二极管连接到功率MOSFET的源极节点。 二极管连接的MOSFET的漏极节点连接到半导体器件的栅极输入节点。 二极管连接的MOSFET的源节点连接到功率MOSFET的栅极。 功率MOSFET和二极管连接的MOSFET集成到半导体器件的衬底中,使得二极管连接的MOSFET源极和漏极节点通过pn结与功率MOSFET源节点电隔离。