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1. 发明申请

US20080220596A1 Delivery of Low Pressure Dopant Gas to a High Voltage Ion Source 审中-公开
标题翻译：将低压掺杂气体输送到高电压离子源
公开(公告)号：US20080220596A1
公开(公告)日：2008-09-11
申请号：US12065471
申请日：2006-08-29
申请人： W. Karl Olander , Jose I. Arno , Robert Kaim
发明人： W. Karl Olander , Jose I. Arno , Robert Kaim
IPC分类号： H01L21/265 , H01J37/317 , H01J37/08
CPC分类号： H01J37/08 , H01J27/02 , H01J37/3172 , H01J2237/0203
摘要： A system for delivery of low-pressure dopant gas to a high-voltage ion source in the doping of semiconductor substrates, in which undesired ionization of the gas is suppressed prior to entry into the high-voltage ion source, by modulating electron energy upstream of the high-voltage ion source so that electron acceleration effects are reduced to below a level supporting an electronic ionization cascade. The gas delivery system in a specific application includes a gas flow passage, a voltage generator electrically coupled with at least a portion of the gas flow passage to impose an electric field thereon, and an obstructive structure that is deployed to modulate acceleration length of electrons of the low-pressure gas in relation to ionization potential of the gas, to suppress ionization in the gas flow passage.
摘要翻译：一种用于在半导体衬底的掺杂中向高电压离子源传送低压掺杂气体的系统，其中在进入高压离子源之前，气体的不期望的电离被抑制，通过调制高电压离子源，使得电子加速效应降低到低于支持电子离子化级联的水平。具体应用中的气体输送系统包括气体流动通道，与气体流动通道的至少一部分电耦合以在其上施加电场的电压发生器，以及阻塞结构，其被展开以调制电子的加速度长度相对于气体的电离电位的低压气体，抑制气体流路中的电离。

2. 发明申请

US20150037511A1 ALTERNATE MATERIALS AND MIXTURES TO MINIMIZE PHOSPHORUS BUILDUP IN IMPLANT APPLICATIONS 有权
标题翻译：替代植物材料和混合物以最小化植入物中的磷酸酶
公开(公告)号：US20150037511A1
公开(公告)日：2015-02-05
申请号：US14378652
申请日：2013-02-14
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： Richard S. Ray
IPC分类号： H01J37/317 , C23C14/54 , C23C14/48 , C23C14/52 , H01J37/08 , C23C14/06
CPC分类号： H01J37/3171 , C23C14/0694 , C23C14/48 , C23C14/52 , C23C14/54 , H01J37/08 , H01J2237/006 , H01J2237/022
摘要： Systems and processes for utilizing phosphorus fluoride in place of or in combination with, phosphine as a phosphorus dopant source composition, to reduce buildup of unwanted phosphorus deposits in ion implanter systems. The phosphorus fluoride may comprise PF3 and/or PF5. Phosphorus fluoride and phosphine may be co-flowed to the ion implanter, or each of such phosphorus dopant source materials can be alternatingly and sequentially flowed separately to the ion implanter, to achieve reduction in unwanted buildup of phosphorus solids in the implanter, relative to a corresponding process system utilizing only phosphine as the phosphorus dopant source material.
摘要翻译：代替磷组分作为磷掺杂剂源组合物利用磷氟化物的系统和方法，以减少离子注入系统中不想要的磷沉积物的积聚。氟化磷可以包括PF 3和/或PF 5。氟化磷和磷化氢可以共同流到离子注入机，或者每种这样的磷掺杂剂源材料可以交替地和顺序地流动到离子注入机，以实现在植入器中磷固体的不希望的累积相对于相对于相应的处理系统仅使用磷化氢作为磷掺杂剂源材料。

3. 发明申请

US20140305079A1 CLOSURE/CONNECTORS FOR LINER-BASED SHIPPING AND DISPENSING CONTAINERS AND METHODS FOR FILLING LINER-BASED SHIPPING AND DISPENSING CONTAINERS 审中-公开
标题翻译：用于基于衬管的运输和分配容器的封闭/连接器以及用于填充基于衬管的运输和分配容器的方法
公开(公告)号：US20140305079A1
公开(公告)日：2014-10-16
申请号：US14356923
申请日：2012-11-16
申请人： Advanced Technology Materials, Inc.
发明人： Donald Ware , Alfredo Daniel Botet , Glenn M. Tom , Greg Nelson , Dale Mowrey , Jordan Hodges
IPC分类号： B65B31/00 , B65B7/28 , B65B63/08
CPC分类号： B65D77/06 , B65B3/04 , B65B3/18 , B65B63/08 , B65D81/2023 , B67C3/223 , B67C3/30 , B67D7/0255 , B67D7/0288
摘要： A method for removing headspace gas from a liner-based assembly. The liner-based assembly may generally include an overpack, a liner positioned within the overpack and containing a material and headspace gas, and a closure for sealing the liner. The method may include providing a one-way valve in fluid communication with the interior of the liner and permitting flow in a direction out of the interior of the liner, and applying a vacuum to the one-way valve to evacuate headspace gas from the interior of the liner. In some embodiments, The liner-based assembly may also include a port in fluid communication with an annular space between the overpack and liner, and the method may include capping the port, for example, during application of the vacuum to the one-way valve.
摘要翻译：一种从基于衬套的组件移除顶空气体的方法。基于衬垫的组件通常可以包括外包装，位于外包装内并且包含材料和顶部空间气体的衬垫以及用于密封衬套的封闭件。该方法可以包括提供与衬套内部流体连通的单向阀，并允许沿着衬套内部流出的方向流动，并向单向阀施加真空以将顶部空间气体从内部排出的班轮。在一些实施例中，基于衬管的组件还可以包括与外包装和衬套之间的环形空间流体连通的端口，并且该方法可以包括例如在真空向单向阀施加真空期间封盖端口。

4. 发明授权

US08858685B2 Gas storage and dispensing system with monolithic carbon adsorbent 有权
标题翻译：具有整体式碳吸附剂的气体储存和分配系统
公开(公告)号：US08858685B2
公开(公告)日：2014-10-14
申请号：US13601377
申请日：2012-08-31
申请人： J. Donald Carruthers
发明人： J. Donald Carruthers
IPC分类号： B01D53/04 , B01J20/20 , F17C11/00 , B01D53/02 , B01J20/28
CPC分类号： F17C11/00 , B01D53/02 , B01D53/0407 , B01D53/0415 , B01D2253/102 , B01D2253/304 , B01D2253/308 , B01D2253/311 , B01D2253/342 , B01D2256/26 , B01D2259/40003 , B01D2259/41 , B01D2259/4525 , B01D2259/455 , B01J20/20 , B01J20/28042 , F17C13/002 , F17C2270/0518 , Y02C20/10 , Y10S95/901 , Y10S502/526
摘要： A pyrolyzed monolith carbon physical adsorbent that is characterized by at least one of the following characteristics: (a) a fill density measured for arsine gas at 25° C. and pressure of 650 torr that is greater than 400 grams arsine per liter of adsorbent; (b) at least 30% of overall porosity of the adsorbent including slit-shaped pores having a size in a range of from about 0.3 to about 0.72 nanometer, and at least 20% of the overall porosity including micropores of diameter
摘要翻译：一种热解的整体碳物理吸附剂，其特征在于以下特征中的至少一个：（a）在25℃下测量的胂气体的填充密度和650乇的压力，其大于每升吸附剂400克胂; （b）吸附剂的总孔隙率的至少30％，包括尺寸在约0.3至约0.72纳米范围内的狭缝状孔，以及包括直径<2纳米的微孔的总孔隙率的至少20％; 和（c）堆积密度为约0.80至约2.0克/立方厘米，优选为0.9至2.0克/立方厘米。

5. 发明申请

US20140234436A1 SYSTEMS AND METHODS FOR CAPTURE, STORAGE, AND SUPPLYING PHOSPHINE GAS 审中-公开
标题翻译：捕获，储存和供应磷酸气体的系统和方法
公开(公告)号：US20140234436A1
公开(公告)日：2014-08-21
申请号：US14240404
申请日：2012-06-12
申请人： James V. McManus , Edward A. Sturm , Thomas H. Baum , J. Donald Carruthers , Joshua B. Sweeney
发明人： James V. McManus , Edward A. Sturm , Thomas H. Baum , J. Donald Carruthers , Joshua B. Sweeney
IPC分类号： A01N59/26 , A01M13/00
CPC分类号： A01N59/26 , A01M13/00 , B01J20/08 , B01J20/103 , B01J20/18 , B01J20/20 , B01J20/28011 , B01J20/28066 , C01B25/06 , A01N25/08 , A01N25/18
摘要： A system and process for generating and packaging phosphine gas, in which the process includes: reacting water and aluminum phosphide to generate phosphine, and providing the phosphine in a gas mixture at a phosphine concentration below a lower explosive limit; adsorptively removing phosphine from the gas mixture; and packaging the removed phosphine in a fluid storage and dispensing vessel.
摘要翻译：一种用于产生和包装磷化氢气体的系统和方法，其中该方法包括：使水和磷化铝磷化氢反应生成磷化氢，并在低于爆炸下限的磷化氢浓度的气体混合物中提供磷化氢; 从气体混合物中吸附去除磷化氢; 并将去除的磷化氢包装在流体储存和分配容器中。

6. 发明申请

US20140220733A1 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS 有权
标题翻译：用于金属薄膜CVD / ALD的抗反应和锗复合物
公开(公告)号：US20140220733A1
公开(公告)日：2014-08-07
申请号：US14251475
申请日：2014-04-11
申请人： Advanced Technology Materials, Inc.
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L45/00
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译：描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造方法。本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

7. 发明申请

US20140206136A1 ANTIMONY COMPOUNDS USEFUL FOR DEPOSITION OF ANTIMONY-CONTAINING MATERIALS 有权
标题翻译：用于沉积含有抗菌材料的抗微生物化合物
公开(公告)号：US20140206136A1
公开(公告)日：2014-07-24
申请号：US14217866
申请日：2014-03-18
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： Tianniu Chen , William Hunks , Philip S.H. Chen , Chongying Xu , Leah Maylott
IPC分类号： C07F9/90 , H01L21/02 , C23C16/18
CPC分类号： H01L21/02568 , C07C211/65 , C07F9/90 , C07F9/902 , C23C16/18 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
摘要翻译：用于在诸如晶片或其他微电子器件基底的基底上沉积含锑膜的前体，以及制备和使用这些前体的相关工艺以及这些前体的源封装。这些前体可用于通过诸如化学气相沉积（CVD）和原子层沉积（ALD）的沉积技术在制造非易失性相变存储器（PCM）中或用于制造热电装置时沉积Ge2Sb2Te5硫族化物薄膜。

8. 发明申请

US20140206134A1 LOW TEMPERATURE DEPOSITION OF PHASE CHANGE MEMORY MATERIALS 有权
标题翻译：相变记忆材料的低温沉积
公开(公告)号：US20140206134A1
公开(公告)日：2014-07-24
申请号：US14223500
申请日：2014-03-24
申请人： Advanced Technology Materials, Inc.
发明人： Jeffrey F. Roeder , Thomas H. Baum , Bryan C. Hendrix , Gregory T. Stauf , Chongying Xu , William Hunks , Tianniu Chen , Matthias Stender
IPC分类号： H01L51/00
CPC分类号： H01L51/0002 , C07F7/30 , C23C16/305 , C23C16/45553
摘要： A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
摘要翻译：在基板上形成相变记忆材料的系统和方法，其中在温度低于350℃的条件下，在产生硫属元素化合物的沉积的条件下，在相变存储硫族化合物的前体与基板接触的基板上，其接触通过化学气相沉积或原子层沉积进行。描述了各种碲，锗和锗 - 碲前体，其可用于在基底上形成GST相变记忆膜。

9. 发明申请

US20140191019A1 APPARATUS AND METHOD FOR STRIPPING SOLDER METALS DURING THE RECYCLING OF WASTE ELECTRICAL AND ELECTRONIC EQUIPMENT 有权
标题翻译：垃圾电子设备回收期间剥离焊锡金属的装置及方法
公开(公告)号：US20140191019A1
公开(公告)日：2014-07-10
申请号：US14240220
申请日：2012-12-13
申请人： Tianniu Chen , Michael B. Korzenski , Ping Jiang
发明人： Tianniu Chen , Michael B. Korzenski , Ping Jiang
IPC分类号： B23K1/018 , B09B5/00
CPC分类号： B23K1/018 , B09B3/00 , B09B5/00 , B23K3/08 , B23K37/00 , C22B1/005 , C22B3/02 , C22B3/04 , C22B4/00 , C22B7/006 , C22B11/046 , C25C1/00 , H05K3/22 , H05K2203/178 , Y02P10/234 , Y02P70/613 , Y02W30/82 , Y02W30/821 , Y02W30/822
摘要： Apparatuses and processes for recycling printed wire boards, wherein electronic components, precious metals and base metals may be collected for reuse and recycling. The apparatuses generally include a mechanical solder removal module and/or a thermal module, a chemical solder removal module, and a precious metal leaching module, wherein the modules are attached for continuous passage of the e-waste from module to module.
摘要翻译：可以收集用于回收印刷线路板的设备和方法，其中电子元件，贵金属和贱金属可以被收集用于再利用和再循环。这些设备通常包括机械焊料去除模块和/或热模块，化学焊剂去除模块和贵金属浸出模块，其中模块被附接以使电子废物从模块连续通过模块。

10. 发明授权

US08754021B2 Non-amine post-CMP composition and method of use 有权
标题翻译：非胺后CMP组合物及其使用方法
公开(公告)号：US08754021B2
公开(公告)日：2014-06-17
申请号：US12709054
申请日：2010-02-19
申请人： Jeffrey A. Barnes , Jun Liu , Peng Zhang
发明人： Jeffrey A. Barnes , Jun Liu , Peng Zhang
IPC分类号： C11D7/50 , C11D11/00 , C11D7/06
CPC分类号： C11D11/0047 , B08B3/08 , B08B3/10 , B08B7/04 , C11D3/044 , C11D3/2041 , C11D3/2044 , C11D3/2065 , C11D3/2075 , C11D3/2086 , C11D3/2096 , C11D3/33 , C11D3/43 , C11D7/06 , C11D7/08 , C11D7/265 , C11D7/267 , C11D7/3245 , C11D7/50 , C11D7/5004 , C11D7/5022 , H01L21/0206 , H01L21/02065 , H01L21/02068 , H01L21/02074
摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amine and ammonium-containing compounds, e.g., quaternary ammonium bases. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
摘要翻译：一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。清洁组合物基本上不含胺和铵的化合物，例如季铵碱。该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。

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