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1. 发明申请

US20210211794A1 ATTACHABLE VIBRATION SENSOR AND METHOD FOR MANUFACTURING SAME 有权
公开(公告)号：US20210211794A1
公开(公告)日：2021-07-08
申请号：US16973405
申请日：2019-03-08
申请人： CENTER FOR ADVANCED SOFT ELECTRONICS , POSTECH ACADEMY-INDUSTRY FOUNDATION
发明人： Kilwon CHO , Siyoung Lee , Yoonyoung CHUNG
IPC分类号： H04R1/08 , H04R31/00 , H04R1/40 , H04R3/00 , H04R7/04 , H04R7/16 , G10L25/78 , H04R1/14
摘要： Proposed is a vibration sensor including: a substrate; a first electrode positioned on the substrate; a support positioned on the first electrode and including a cylindrical hollow hole; and a diaphragm including a thin film positioned on the support and a second electrode positioned on the thin film. According to the present disclosure, it is possible to manufacture a skin-attachable vibration sensor that is attached to a user's neck to detect vibration acceleration in user's neck skin, thus exhibiting a uniform and high sensitivity to a user's voice over the frequency range of the human voice. In addition, the sensor sensitively detects a user's voice through neck skin vibrations rather than through air, thus being free from the influence of external noise or wind, and can recognize the user's voice even in a situation where a user's mouth is covered.

2. 发明授权

US10692935B2 3D static RAM core cell having vertically stacked structure, and static RAM core cell assembly comprising same 有权
公开(公告)号：US10692935B2
公开(公告)日：2020-06-23
申请号：US16066862
申请日：2016-12-28
申请人： CENTER FOR ADVANCED SOFT ELECTRONICS
发明人： Jimin Kwon , Sungjune Jung , Jae Joon Kim , Kilwon Cho , Sujeong Kyung
IPC分类号： H01L27/28 , H01L27/11 , H01L23/522 , H01L23/528 , H01L51/00 , H01L51/05 , H01L51/10
摘要： Disclosed is a 3D static RAM core cell having a vertically stacked structure, including six thin-film transistors each having a gate electrode, a source electrode and a drain electrode, the static RAM core cell including two switching thin-film transistors, each connected to a bit line and a word line to select recording and reading of data, and four data-storage thin-film transistors connected to a power supply voltage (Vdd) or a ground voltage (Vss) to record and read data, the static RAM core cell including a first transistor layer including two thin-film transistors selected from among the six thin-film transistors, a second transistor layer disposed on the first transistor layer and including two thin-film transistors selected from among the remaining four thin-film transistors, and a third transistor layer disposed on the second transistor layer and including the remaining two thin-film transistors, at least one electrode of the first transistor layer and at least one electrode of the second transistor layer being electrically connected to each other, and at least one electrode of the second transistor layer and at least one electrode of the third transistor layer being electrically connected to each other. Thereby, the static RAM core cell is configured such that organic transistors of the same type are arranged in the same plane and are vertically stacked, thus omitting a complicated patterning process for forming organic transistors of different types upon fabrication of a memory element, and also reducing the area occupied by the memory element to thereby increase the degree of integration of semiconductor circuits.

3. 发明授权

US09685558B2 Flexible electronic device having adhesive function and method of manufacturing the same 有权
公开(公告)号：US09685558B2
公开(公告)日：2017-06-20
申请号：US14757537
申请日：2015-12-23
申请人： CENTER FOR ADVANCED SOFT ELECTRONICS
发明人： Kilwon Cho , Yoonyoung Chung , Hyun Ho Kim
IPC分类号： H01L21/00 , H01L29/00 , H01L51/00 , H01L29/786 , H01L51/05 , H01L29/16 , H01L29/423 , H01L29/66 , H01L21/02
CPC分类号： H01L29/78684 , H01L21/0223 , H01L21/02252 , H01L21/02527 , H01L29/1606 , H01L29/42356 , H01L29/42364 , H01L29/66045 , H01L29/78603 , H01L51/0041 , H01L51/0097 , H01L51/0516 , H01L51/0545 , H01L51/0558
摘要： Disclosed is a flexible electronic device having an adhesive function, including an adhesive tape that includes a flexible film and an adhesive layer formed on one side of the flexible film, and an electronic device formed on a remaining side of the flexible film of the adhesive tape. Accordingly, the flexible electronic device of the present invention is transferred on a surface of various flexible materials or materials having a curved surface so as to freely adhere and minimize breakage of the electronic device and maintain performance over a long period of time, even if the substrate is modified or repeatedly bent.

4. 发明授权

US11117804B2 Method of synthesizing thickness-controlled graphene through chemical vapor deposition using Cu—Ni thin film laminate 有权
公开(公告)号：US11117804B2
公开(公告)日：2021-09-14
申请号：US15867913
申请日：2018-01-11
申请人： CENTER FOR ADVANCED SOFT ELECTRONICS
发明人： Kilwon Cho , Min Seok Yoo , Hyo Chan Lee
IPC分类号： C01B32/182 , C01B32/186 , C23C14/34 , C23C16/26 , C23C16/04 , C23C16/02
摘要： Disclosed is a method of synthesizing graphene, wherein a Cu—Ni thin film laminate including a copper thin film and a nickel thin film formed thereon is placed in a chemical vapor depositor, brought into contact with a graphene precursor and subjected to chemical vapor deposition (CVD), thus synthesizing thickness-controlled graphene on the copper thin film, whereby the thickness of multilayer graphene can be easily and reproducibly controlled by adjusting only nickel thickness and CVD time, and a process window for obtaining reproducible results can be widened due to self-limiting properties whereby the maximum thickness of graphene is obtained after a certain synthesis time due to the thickness-controlled nickel thin film. Also, carbon atoms absorbed to the nickel thin film reach the copper thin film opposite thereto through internal diffusion of the metal laminate to thus grow graphene via surface-mediated reaction thereon, thereby improving the uniformity of synthesized graphene.

5. 发明授权

US11050024B2 Method of manufacturing surface-modified polymer film and method of fabricating organic electronic device comprising the same 有权
公开(公告)号：US11050024B2
公开(公告)日：2021-06-29
申请号：US16168885
申请日：2018-10-24
申请人： CENTER FOR ADVANCED SOFT ELECTRONICS , POSTECH ACADEMY-INDUSTRY FOUNDATION
发明人： Kilwon Cho , Jinsung Kim , Boseok Kang
IPC分类号： H01L51/00 , H01L51/05 , B05D1/18 , C08J7/14 , C08J7/12 , H01L51/42 , H01L51/50
摘要： Disclosed is a method of manufacturing a surface-modified polymer film, including forming a hydroxyl group (—OH) on the surface of a polymer film by subjecting the polymer film to light irradiation and surface treatment with a photoacid generator. The polymer film can be introduced with a hydroxyl group (—OH) group using a photoacid generator, thereby modifying the surface of the polymer film without damage to the polymer film. Also, an organic electronic device including the surface-modified polymer film can be improved in electrical characteristics and stability.

6. 发明授权

US10978595B2 Thin-film transistor-based pressure sensor and method of manufacturing same 有权
公开(公告)号：US10978595B2
公开(公告)日：2021-04-13
申请号：US16364566
申请日：2019-03-26
申请人： CENTER FOR ADVANCED SOFT ELECTRONICS
发明人： Sanghoon Baek , Sungjune Jung , Jimin Kwon , Geunyeol Bae , Kilwon Cho
IPC分类号： H01L29/84 , H01L29/786 , H01L51/00 , H01L51/05
摘要： Disclosed is a thin-film transistor-based pressure sensor including a gate electrode; a gate dielectric layer provided on the gate electrode; a semiconductor layer provided on the gate dielectric layer; and a source electrode and a drain electrode provided on the semiconductor layer, wherein each of the source and drain electrodes has an elastic body that includes: an elastic part having a protrusion; and a conductive part provided on a surface of the elastic part and having a conductive material. According to the pressure sensor and a method of manufacturing the same of the present invention, the elastic body coated with the conductive material is patterned to serve as the source electrode and the drain electrode of the pressure sensor whereby it is possible to drive an active matrix, drive the pressure sensor with low power, and manufacture the pressure sensor through a simple process.

7. 发明授权

US10804480B2 Graphene laminate and preparation method therefor 有权
公开(公告)号：US10804480B2
公开(公告)日：2020-10-13
申请号：US15561039
申请日：2016-03-18
申请人： CENTER FOR ADVANCED SOFT ELECTRONICS
发明人： Kilwon Cho , Haena Kim , Boseok Kang
IPC分类号： H01L51/10 , B32B9/00 , B32B9/04 , C01B32/192 , H01L51/44 , C01B32/198 , H01B1/04 , H01L51/00 , H01L51/52
摘要： Disclosed is a graphene laminate including a first graphene layer, containing an electron-donating functional group, and a second graphene layer, disposed on the first graphene layer and configured to include graphene, wherein the second graphene layer is n-doped with the first graphene layer. Thereby, graphene is doped with amino-group-modified graphene, thus preventing the transparency of graphene from decreasing, and the extent of doping of graphene can be adjusted, and the doping effect can last a long time even without any protective layer.

8. 发明授权

US10755939B2 Multilayer graphene using chemical vapor deposition and method of manufacturing same 有权
公开(公告)号：US10755939B2
公开(公告)日：2020-08-25
申请号：US16567262
申请日：2019-09-11
申请人： CENTER FOR ADVANCED SOFT ELECTRONICS , POSTECH ACADEMY-INDUSTRY FOUNDATION
发明人： Kilwon Cho , Min Seok Yoo , Hyo Chan Lee
IPC分类号： H01L21/28 , H01L21/285 , H01L21/02 , H01L21/263 , H01L23/532 , H01L29/16
摘要： Disclosed is a method of manufacturing multilayer graphene, including (a) contacting of a metal substrate with a nonmetal element, (b) reduction through heat treatment, and (c) chemical vapor deposition of a graphene precursor on the metal substrate containing the nonmetal element dissolved therein, thereby manufacturing multilayer graphene that is doped with the nonmetal element on the metal substrate. In the multilayer graphene thus manufactured, the number of graphene layers and the work function are simultaneously adjusted by controlling the concentration of doped nonmetal element in a thickness direction of graphene through interactions related to the reduction of the nonmetal element dissolved in a copper catalyst and the growth of graphene, and moreover, the stacking structure of graphene is maintained and the optoelectronic properties of multilayer graphene can be controlled by simultaneously regulating graphene growth and doping during the synthesis procedure without additional processing.

9. 发明申请

US20190217573A1 FLEXIBLE SUBSTRATE, MANUFACTURING METHOD THEREOF, AND FLEXIBLE ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开
公开(公告)号：US20190217573A1
公开(公告)日：2019-07-18
申请号：US16248972
申请日：2019-01-16
申请人： Postech Academy-Industry Foundation , Center for Advanced Soft Electronics
发明人： Yoonyoung CHUNG , Kilwon CHO , Seongmin PARK , Hyuk PARK
IPC分类号： B32B7/022 , H05K1/03 , B32B27/08 , B32B27/28 , B32B37/00 , B32B37/24
CPC分类号： B32B7/022 , B32B27/08 , B32B27/281 , B32B27/283 , B32B37/025 , B32B37/24 , B32B2037/243 , B32B2250/03 , B32B2250/24 , B32B2305/72 , B32B2307/54 , B32B2307/546 , B32B2309/02 , B32B2379/08 , B32B2383/00 , B32B2457/08 , H05K1/036 , H05K2201/0154 , H05K2201/0162
摘要： Provided is a flexible substrate. The flexible substrate includes a first film having a first Young's modulus, a second film on the first film and having a second Young's modulus, and a third film between the first film and the second film and having a third Young's modulus. The third Young's modulus is less than each of the first Young's modulus and the second Young's modulus.

10. 发明授权

US10023469B2 Method for producing graphene with controlled number of layers, and method for manufacturing electronic device using same 有权
公开(公告)号：US10023469B2
公开(公告)日：2018-07-17
申请号：US15324297
申请日：2015-05-15
申请人： CENTER FOR ADVANCED SOFT ELECTRONICS
发明人： Kilwon Cho , Hyo Chan Lee , Eun Ho Lee
IPC分类号： C01B31/04 , H01B13/00 , B82Y40/00 , B82Y30/00
摘要： Disclosed is a method of producing graphene, which includes bringing a metal catalyst into contact with hydrogen gas (Step a), bringing the metal catalyst in Step a into contact with at least one selected from among a hydrocarbon gas, nitrogen gas, and an inert gas (Step b), and forming graphene on the metal catalyst by bringing the metal catalyst in Step b into contact with hydrogen gas and a hydrocarbon gas (Step c), whereby the number of layers of graphene can be variously controlled as needed, regardless of the initial surface roughness of a metal catalyst layer, and also, the time required to form graphene can be shortened, thus reducing processing costs.

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