专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09608143B2 Composition for forming N-type diffusion layer, method of forming N-type diffusion layer, and method of producing photovoltaic cell 有权
公开(公告)号：US09608143B2
公开(公告)日：2017-03-28
申请号：US14076225
申请日：2013-11-10
申请人： Hitachi Chemical Company, Ltd.
发明人： Youichi Machii , Masato Yoshida , Takeshi Nojiri , Kaoru Okaniwa , Mitsunori Iwamuro , Shuichiro Adachi , Tetsuya Sato , Keiko Kizawa
IPC分类号： H01L21/00 , H01L31/0288 , C03C8/18 , H01L21/22 , H01L21/225 , H01L31/0224 , H01L31/0236 , H01L31/068 , H01L31/18 , H01L21/04 , C03C3/097
CPC分类号： H01L31/0288 , C03C3/097 , C03C8/18 , H01L21/04 , H01L21/22 , H01L21/2225 , H01L21/2255 , H01L31/022425 , H01L31/0236 , H01L31/068 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

2. 发明授权

US09601679B2 Thermoelectric module and method of manufacturing the same 有权
公开(公告)号：US09601679B2
公开(公告)日：2017-03-21
申请号：US14248831
申请日：2014-04-09
申请人： Hitachi Chemical Co., Ltd.
发明人： Tomotake Tohei , Shinichi Fujiwara , Zenzo Ishijima , Takahiro Jinushi
IPC分类号： H01L35/30 , H01L35/32 , H01L35/08
CPC分类号： H01L35/32 , H01L35/08
摘要： In a configuration to join thermoelectric elements with an electrode in a thermoelectric module, reduction in junction reliability between the thermoelectric elements and the electrode is suppressed in a high-temperature environment and in an environment in which vibration and shock are imposed as load, to efficiently transmit the outer-circumferential temperature to the thermoelectric elements. In a thermoelectric module in which a plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric element are alternately arranged by aligning the surfaces thereof on the high-temperature side and the surfaces thereof on the low-temperature side, to electrically connect the thermoelectric elements in series to each other; the p-type thermoelectric elements and the n-type thermoelectric element are joined via an intermediate layer with a deformable stress relaxation electrode, to thereby absorb stress taking place during the module assembling process and the module operation by the electrode.

3. 发明授权

US08976846B2 Wireless transmission system and wireless transmitter, wireless receiver, wireless transmission method, wireless reception method and wireless communication method used with same 有权
标题翻译：无线传输系统和无线发射机，无线接收机，无线传输方式，无线接收方式和无线通信方式相同
公开(公告)号：US08976846B2
公开(公告)日：2015-03-10
申请号：US13635862
申请日：2011-03-17
申请人： Junzoh Shimizu , Minoru Fujishima , Masahiko Ohta , Toshio Takada
发明人： Junzoh Shimizu , Minoru Fujishima , Masahiko Ohta , Toshio Takada
IPC分类号： H04B1/38 , H04L27/04 , H04L5/06 , H04N21/4363
CPC分类号： H04L27/04 , G09G5/006 , G09G2370/045 , G09G2370/12 , G09G2370/16 , G09G2370/22 , H04L5/06 , H04N21/43637
摘要： A wireless transmission system includes a wireless HDMI transmitter and a wireless HDMI receiver. The wireless HDMI transmitter includes a carrier oscillator provided for each channel of an HDMI transmission path to output a carrier signal in a millimeter band, an OOK modulator provided for each carrier oscillator to perform on-off keying modulation on a carrier signal outputted by its corresponding carrier oscillator, and an input circuit provided for each channel of the HDMI transmission path to input a digital signal outputted by a source device to the OOK modulator. Radio signals have different planes of polarization from their adjacent channels.
摘要翻译：无线传输系统包括无线HDMI发射机和无线HDMI接收机。无线HDMI发射机包括为HDMI传输路径的每个信道提供的载波振荡器，以输出毫米波段中的载波信号，为每个载波振荡器提供的OOK调制器，以对由其相应的载波信号输出的载波信号执行开 - 关键控调制载波振荡器和为HDMI传输路径的每个信道提供的输入电路，以将源装置输出的数字信号输入到OOK调制器。无线电信号与其相邻信道具有不同的极化平面。

4. 发明授权

US08632892B2 Organic electronic material, organic electronic device, and organic electroluminescent device 有权
标题翻译：有机电子材料，有机电子器件和有机电致发光器件
公开(公告)号：US08632892B2
公开(公告)日：2014-01-21
申请号：US12374134
申请日：2007-07-17
申请人： Yousuke Hoshi , Shigeaki Funyuu , Yoshii Morishita
发明人： Yousuke Hoshi , Shigeaki Funyuu , Yoshii Morishita
IPC分类号： H01L51/54
CPC分类号： H01L51/0043 , C08G73/026 , C09K11/06 , C09K2211/1483 , H01B1/128 , H01L51/0039 , H01L51/5048 , H01L51/5088 , H05B33/14
摘要： An object of the present invention is to provide an organic electronic material that can be easily formed into a multilayer structure. A further object of the present invention is to provide an organic electronic device and an organic EL device that exhibit a better emission efficiency and a better emission lifetime than heretofore achieved. In order to achieve these objects, an organic electronic material is provided, the material includes a polymer or oligomer that has at least one polymerizable substituent and a hole-transporting repeat unit.
摘要翻译：本发明的目的是提供一种易于形成为多层结构的有机电子材料。本发明的另一个目的是提供一种有机电子器件和有机EL器件，其表现出比以前实现的更好的发光效率和更好的发光寿命。为了实现这些目的，提供了一种有机电子材料，该材料包括具有至少一个可聚合取代基和空穴传输重复单元的聚合物或低聚物。

5. 发明申请

US20130260558A1 POLISHING LIQUID AND METHOD FOR POLISHING SUBSTRATE USING THE POLISHING LIQUID 有权
标题翻译：抛光液和使用抛光液抛光底物的方法
公开(公告)号：US20130260558A1
公开(公告)日：2013-10-03
申请号：US13884883
申请日：2011-12-22
申请人： Munehiro Oota , Takaaki Tanaka , Toshio Takizawa , Shigeru Yoshikawa , Takaaki Matsumoto , Takahiro Yoshikawa , Takashi Shinoda
发明人： Munehiro Oota , Takaaki Tanaka , Toshio Takizawa , Shigeru Yoshikawa , Takaaki Matsumoto , Takahiro Yoshikawa , Takashi Shinoda
IPC分类号： H01L21/306
CPC分类号： H01L21/31055 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/30625 , H01L21/31053
摘要： Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of —COOM group, -Ph-OM group, —SO3M group and —PO3M2 group, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.
摘要翻译：本发明提供一种包括氧化铈颗粒，有机酸A，具有羧酸基或羧酸酯基的高分子化合物B和水的抛光液，其中有机酸A具有至少一个选自-COOM 基团-Ph-OM基团，-SO 3 M基团和-PO 3 M 2基团，有机酸A的pKa小于9，有机酸A的含量相对于研磨液的总质量为0.001〜1质量％，相对于研磨液的总质量，高分子化合物B的含量为0.01〜0.50质量％，pH为4.0〜7.0。

6. 发明申请

US20130217229A1 POLISHING LIQUID FOR METAL FILM AND POLISHING METHOD 审中-公开
标题翻译：抛光液用于金属膜和抛光方法
公开(公告)号：US20130217229A1
公开(公告)日：2013-08-22
申请号：US13846289
申请日：2013-03-18
申请人： HITACHI CHEMICAL CO., LTD.
发明人： Kouji Haga , Masato Fukasawa , Jin Amanokura , Hiroshi Nakagawa
IPC分类号： H01L21/306
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/3212
摘要： The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.
摘要翻译：本发明涉及一种用于金属膜的抛光液，其包含7.0重量％或更多的金属氧化剂，水溶性聚合物，氧化金属溶解剂，金属防腐剂和水，条件是抛光总量金属膜用液体为100重量％，其中，所述水溶性聚合物的重均分子量为15万以上，为选自多元羧酸，多元羧酸和多元羧酸中的至少1种酯。根据本发明，提供了一种用于金属膜的抛光液，即使在低至1psi或更低的抛光压力下也可以以高速率进行抛光，并且抛光后的抛光膜的平面度优异，此外，即使在研磨的初始阶段也可以获得高抛光速率，并且提供了使用抛光液的抛光方法。

7. 发明授权

US08501625B2 Polishing liquid for metal film and polishing method 失效
标题翻译：抛光液用于金属膜和抛光方法
公开(公告)号：US08501625B2
公开(公告)日：2013-08-06
申请号：US12668096
申请日：2008-07-08
申请人： Kouji Haga , Masato Fukasawa , Jin Amanokura , Hiroshi Nakagawa
发明人： Kouji Haga , Masato Fukasawa , Jin Amanokura , Hiroshi Nakagawa
IPC分类号： C09G1/02 , C09G1/04
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/3212
摘要： The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.
摘要翻译：本发明涉及一种用于金属膜的抛光液，其包含7.0重量％或更多的金属氧化剂，水溶性聚合物，氧化金属溶解剂，金属防腐剂和水，条件是抛光总量金属膜用液体为100重量％，其中，所述水溶性聚合物的重均分子量为15万以上，为选自多元羧酸，多元羧酸和多元羧酸中的至少1种酯。根据本发明，提供了一种用于金属膜的抛光液，即使在低至1psi或更低的抛光压力下也可以以高速率进行抛光，并且抛光后的抛光膜的平面度优异，此外，即使在研磨的初始阶段也可以获得高抛光速率，并且提供了使用抛光液的抛光方法。

8. 发明授权

US08486837B2 Polishing slurry for metal, and polishing method 失效
公开(公告)号：US08486837B2
公开(公告)日：2013-07-16
申请号：US12318376
申请日：2008-12-29
申请人： Hiroshi Ono , Katsuyuki Masuda , Masanobu Habiro
发明人： Hiroshi Ono , Katsuyuki Masuda , Masanobu Habiro
IPC分类号： H01L21/00 , H01L21/02019 , H01L21/02247 , H01L21/30 , C11D11/0047 , C11D3/3945
CPC分类号： B24B37/00 , B24B37/04 , B24B37/044 , C09G1/02 , C23F1/42 , C23F3/00 , C23F3/06 , H01L21/3212
摘要： A polishing slurry for metal comprises an oxidizer, a metal oxide dissolving agent, a metal inhibitor, and water, wherein the metal inhibitor is at least one of a compound having an amino-triazole skeleton and a compound having an imidazole skeleton. The use of the polishing slurry for metal makes it possible to raise the polishing speed sufficiently while keeping the etching speed low, restrain the generation of corrosion of the surface of a metal and dishing, and form a metal-film-buried pattern having a high reliability in the process of formation of wiring of semiconductor devices.

9. 发明授权

US08480970B2 Analytical pretreatment device 有权
标题翻译：分析预处理装置
公开(公告)号：US08480970B2
公开(公告)日：2013-07-09
申请号：US11791835
申请日：2005-11-30
申请人： Hiroshi Kawazoe , Kunihiko Akai , Kiyoshi Yasue
发明人： Hiroshi Kawazoe , Kunihiko Akai , Kiyoshi Yasue
IPC分类号： B01L3/00
CPC分类号： B01L3/502715 , B01L3/5025 , B01L3/565 , B01L2200/027 , B01L2200/12 , B01L2300/0816 , B01L2300/0838 , B01L2300/0874
摘要： The present invention relates to an analytical pretreatment device, comprising a supporting material 1, m inlet ports 3 as fluid injection ports, n outlet ports 4 as fluid outlet port, m×n hollow filament 5 communicating between the inlet ports and the outlet ports, and n filler cartridges 6 connected to the outlet ports (wherein, m is a natural number; and n is a natural number) that provides an analytical pretreatment device allowing easier automation of the analytical pretreatment step for improvement in operational accuracy and saving in labor.
摘要翻译：本发明涉及一种分析预处理装置，包括支撑材料1，作为流体注入口的入口3，作为流体出口的n个出口4，在入口和出口之间连通的m×n个中空丝5，以及连接到出口（其中，m是自然数，n是自然数）的n个填充盒6，其提供分析预处理装置，其允许更容易地自动化分析预处理步骤，从而提高操作精度并节省劳动力。

10. 发明授权

US08439995B2 Abrasive compounds for semiconductor planarization 有权
标题翻译：用于半导体平面化的磨料化合物
公开(公告)号：US08439995B2
公开(公告)日：2013-05-14
申请号：US12761542
申请日：2010-04-16
申请人： Kanshi Chinone
发明人： Kanshi Chinone
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14 , B02C7/00 , B01D29/00 , B01D29/46 , B01D24/00
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463
摘要： A polishing slurry for semiconductor planarization containing cerium oxide particles and water, wherein the content of the cerium oxide particles having a diameter of 3 μm or more is 500 ppm or less (weight ratio) in a solid, preferably 100 ppm or less and it is more preferable that D99 (99% by volume of the whole particles in polishing slurry) of the cerium oxide particles is 1 μm or less. The polishing slurry can reduce the generation of scratches, and can polish a surface of the semiconductor substrate in the wiring formation process of semiconductor device precisely at a high speed.
摘要翻译：一种用于包含二氧化铈颗粒和水的半导体平面化的抛光浆料，其中直径为3μm或更大的氧化铈颗粒的含量在固体中为500ppm以下（重量比），优选为100ppm以下，更优选氧化铈粒子的D99（99质量％的研磨浆料中的全部粒子）为1μm以下。抛光浆料可以减少划痕的产生，并且能够在半导体器件的布线形成工艺中精确地高速地抛光半导体衬底的表面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式