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1. 发明申请

US20210253430A1 CARBON NANOSTRUCTURED MATERIALS AND METHODS FOR FORMING CARBON NANOSTRUCTURED MATERIALS 有权
公开(公告)号：US20210253430A1
公开(公告)日：2021-08-19
申请号：US17251547
申请日：2018-06-11
申请人： Jozef Stefan Institute , NATIONAL UNIVERSTIY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM
发明人： Rok ZAPLOTNIK , Miran Mozetic , Gregor PRIMC , Alenka VESEL , Masaru HORI
IPC分类号： C01B32/18
摘要： The present disclosure relates to methods for depositing vertically oriented carbon nanowalls (CNWs) using non-equilibrium gases such as gaseous plasma. Methods are disclosed for rapid deposition of uniformly distributed nanowalls on large surfaces of substrates using ablation of bulk carbon materials by reactive gaseous species, formation of oxidized carbon-containing gaseous molecules, ionization of said molecules and interacting said molecules, neutral or positively charged, with a substrate. The CNWs prepared are useful in different applications such as fuel cells, lithium ion batteries, photovoltaic devices and sensors of specific gaseous molecules.

2. 发明授权

US10105318B2 Low-dimensional structures of organic and/or inorganic substances and use thereof 有权
公开(公告)号：US10105318B2
公开(公告)日：2018-10-23
申请号：US14945987
申请日：2015-11-19
申请人： Institute of Strength Physics and Materials Science of Siberian Branch Russian Academy of Sciences (ISPMS SB RAS) , Jozef Stefan Institute , National Research Tomsk Polytechnic University (TPU)
发明人： Sergey G. Psakhie , Marat I. Lerner , Elena A. Glazkova , Olga V. Bakina , Olga Vasiljeva , Georgy A. Mikhaylov , Boris Turk
IPC分类号： A61K9/16 , A61L15/18 , B01J20/06 , A61K33/08 , A61K33/24 , A61K33/26 , A61L27/20 , A61L27/50 , A61L15/28 , A61L15/42 , B01J20/28 , B01J20/24 , B01J20/26 , B01J20/08
摘要： The object of the present invention is low-dimensional, primarily 2D folded structures of organic and/or inorganic substances and/or their agglomerates, which have folds and faces of irregular shape and exhibit high local electric field strength generated by surface charges on the said folds, faces and edges, and use thereof: as sorbents of organic particles (molecules, bacteria, viruses, proteins, antigens, endotoxins) and inorganic particles (metal ions, colloids); as an agent with wound healing and antibacterial activity; as an agent for tumor cell growth inhibition.

3. 发明授权

US09818479B2 Switchable macroscopic quantum state devices and methods for their operation 有权
公开(公告)号：US09818479B2
公开(公告)日：2017-11-14
申请号：US14802553
申请日：2015-07-17
申请人： Jozef Stefan Institute
发明人： Igor Vaskivskyi , Dragan D. Mihailović , Ian A. Mihailović
IPC分类号： G11C13/00 , H01L45/00 , H01L27/24
CPC分类号： G11C13/0069 , G11C13/0002 , G11C13/0007 , G11C13/0097 , G11C2013/0078 , H01L27/2463 , H01L45/005 , H01L45/126 , H01L45/1286 , H01L45/142 , H01L45/143
摘要： Discloses is an electronic device and a method for its operation. The device has first and second electrodes and an active material. The active material has selectable and stable first and second macroscopic quantum states, such as charge density wave ordered states, having respectively first and second values of electrical resistivity ρ1 and ρ2 at the same temperature. ρ1 is at least 2 times ρ2. The method includes the step of switching between the first and second macroscopic quantum states by injection of current via the electrodes.

4. 发明申请

US20120248445A1 AMORPHOUS MULTICOMPONENT DIELECTRIC BASED ON THE MIXTURE OF HIGH BAND GAP AND HIGH K MATERIALS, RESPECTIVE DEVICES AND MANUFACTURE 有权
标题翻译：基于高带隙和高K材料的混合物的非均匀多组分电介质，相关器件和制造
公开(公告)号：US20120248445A1
公开(公告)日：2012-10-04
申请号：US13388917
申请日：2010-08-05
申请人： Rodrigo Ferrão De Paiva Martins , Elvira Maria Correia fortunato , Pedro Miguel Cândido Barquinha , Luís Miguel Nunes Pereira , Gonçalo Pedro Gonçalves , Danjela Kuscer Hrovatin , Marija Kosec
发明人： Rodrigo Ferrão De Paiva Martins , Elvira Maria Correia fortunato , Pedro Miguel Cândido Barquinha , Luís Miguel Nunes Pereira , Gonçalo Pedro Gonçalves , Danjela Kuscer Hrovatin , Marija Kosec
IPC分类号： H01L21/31 , H01L29/786 , H01L33/08 , H01L29/02
CPC分类号： H01L21/31604 , H01L21/0215 , H01L21/02178 , H01L21/02183 , H01L21/02194 , H01L21/02266 , H01L21/28194 , H01L29/517 , H01L29/7869
摘要： High performance thin-film, transistors are entirely processed at temperatures not exceeding 150° C., using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3 are used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga—In—Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field-effect mobility exceeding 35 cm2 V−1 s−1, close to 0 V turn-on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec−1.
摘要翻译：使用基于高带隙和高介电常数（K）材料的混合物的非晶多组分电介质，高性能薄膜晶体管在不超过150℃的温度下完全处理。使用溅射或喷墨印刷的混合介电材料，例如具有SiO 2或Al 2 O 3或HfO 2的Ta 2 O 5与SiO 2或Al 2 O 3。这些多组分电介质允许产生非晶电介质，以便在具有低泄漏电流的高稳定电子器件中引入，同时保持高的介电常数。这导致产生具有显着电性能的薄膜晶体管，例如基于Ga-In-Zn氧化物作为沟道层产生的薄膜晶体管，其中电介质是混合物Ta 2 O 5 :SiO 2的组合，显示出场效应迁移率超过35cm 2 V-1 s-1，接近0 V导通电压，开/关比高于106，亚阈值斜率低于0.24 V dec-1。

5. 发明申请

US20070274895A1 Quasi-One-Dimensional Polymers Based on the Metal-Chalcogen-Halogen System 审中-公开
标题翻译：基于金属 - 硫族化合物系统的准一维聚合物
公开(公告)号：US20070274895A1
公开(公告)日：2007-11-29
申请号：US10582173
申请日：2004-02-25
申请人： Adolf Jesih , Dragan Mihailovic , Maja Remskar , Ales Mrzel , Daniel Vrbanic
发明人： Adolf Jesih , Dragan Mihailovic , Maja Remskar , Ales Mrzel , Daniel Vrbanic
IPC分类号： B01J27/06 , C01B7/00
CPC分类号： B82Y30/00 , C01G1/00 , C01G39/006 , C01G41/006 , C01P2004/03 , C01P2004/04 , C01P2004/10 , C01P2004/16 , C01P2004/64 , C01P2006/80 , H01J9/025
摘要： The present Invention relates a quasi-one-dimensional material with sub-micron cross-section described by the formula M6CyHz, where the M=transition metal, C=chalcogen, H=halogen, and where y and z are integers such that 8.2
摘要翻译：本发明涉及一种具有亚微米横截面的准一维材料，其由式M 6 C y H z z描述，其中M =过渡金属，C =硫族元素，H =卤素，并且其中y和z是整数，使得8.2

6. 发明申请

US20230033329A1 METHOD AND APPARATUS FOR DEPOSITION OF CARBON NANOSTRUCTURES 有权
公开(公告)号：US20230033329A1
公开(公告)日：2023-02-02
申请号：US17784197
申请日：2019-12-11
申请人： Jozef Stefan Institute , National University Corporation Tokai National Higher Education and Research System
发明人： Rok ZAPLOTNIK , Miran MOZETIC , Gregor PRIMC , Alenka VESEL , Masaru HORI , Osamu ODA
IPC分类号： C23C16/26 , C23C16/505 , C01B32/186
摘要： Methods and apparatus for depositing carbon nanostructures such as three-dimensional graphene mesh using non-equilibrium gaseous plasma of high power density. Methods are disclosed for rapid deposition of randomly distributed graphene sheets on surfaces of substrates using decomposition of CO molecules of a high potential energy, and said excited CO molecules interacting with a substrate. The three-dimensional graphene mesh prepared according to the methods are useful in different applications such as light absorbents, fuel cells, super-capacitors, batteries, photovoltaic devices and sensors of specific gaseous molecules.

7. 发明申请

US20220195593A1 Method for producing N-doped carbon nanomesh 有权
公开(公告)号：US20220195593A1
公开(公告)日：2022-06-23
申请号：US17130417
申请日：2020-12-22
申请人： Jozef Stefan Institute
发明人： Miran MOZETIC , Alenka VESEL , Gregor PRIMC , Rok ZAPLOTNIK
IPC分类号： C23C16/26 , C23C16/448 , C23C16/46 , C23C16/505 , C23C16/511 , C23C16/54 , H01G11/84
摘要： A method for deposition of nitrogen-doped nanocarbon comprises disposing molten polymer and a heated substrate in a plasma reactor; providing dense nitrogen-containing plasma in the plasma reactor in a space between the molten polymer and the heated substrate; and allowing the dense nitrogen-containing plasma to interact with both the molten polymer and the heated substrate to form a film of nitrogen-containing nanocarbon on the heated substrate.

8. 发明申请

US20210198622A1 CONTROLLED AGGREGATION OF CELLS 有权
公开(公告)号：US20210198622A1
公开(公告)日：2021-07-01
申请号：US17137557
申请日：2020-12-30
申请人： Jozef Stefan Institute , Institut za metagenomiko in mikrobne tehnologije, d.o.o.
发明人： Ales LAPANJE , Tomaz RIJAVEC
IPC分类号： C12N5/00
摘要： A method for topographically controlled aggregation, wherein cells of the same type or different type, such as different strains of bacterial cells, are layered in a way that controls the size, structure and number of aggregates as well as the potential spatial distribution of the different species of cells within the aggregates. The method includes a step of surface modifying cells with a polyelectrolyte.

9. 发明申请

US20210009777A1 METHOD 有权
公开(公告)号：US20210009777A1
公开(公告)日：2021-01-14
申请号：US16910247
申请日：2020-06-24
申请人： Jozef Stefan Institute
发明人： Alenka VESEL , Miran MOZETIC , Rok ZAPLOTNIK , Gregor PRIMC , Nina RECEK
IPC分类号： C08J7/12
摘要： Methods for modification of surface wettability of fluorine-containing polymers by sequential treatments first with gaseous plasma rich in ultraviolet radiation, and then oxidation using neutral reactive oxidative species. The methods are rapid and permit treatment of fluorine-containing polymers of any shape and size including ‘infinite’ materials such as foils. A surface layer of an object made from a fluorine-containing polymer is depleted of fluorine upon interaction with gaseous plasma rich in ultraviolet radiation. The depleted surface layer is then exposed to reactive oxygen species such as neutral oxygen atoms in the ground state. The wettability of objects made from or containing fluorine-containing polymers treated according to the methods of the present disclosure is close to the theoretical limit for smooth polymers well functionalized with polar functional groups. Unlike conventional treatment of fluorine-containing polymers with oxygen plasma, the methods of the present disclosure do not produce hazardous gases such as oxy or peroxy fluorinated carbon compounds.

10. 发明授权

US09881708B1 Radiation area monitor device and method 有权
公开(公告)号：US09881708B1
公开(公告)日：2018-01-30
申请号：US15485373
申请日：2017-04-12
申请人： Consolidated Nuclear Security, LLC
发明人： Matjaz Vencelj , Ashley C. Stowe , Toni Petrovic , Jonathan S. Morrell , Andrej Kosicek
IPC分类号： G21F3/00 , G01T3/00 , G01T7/12 , G01T1/16
CPC分类号： G21F3/00 , G01T1/16 , G01T1/169 , G01T3/00 , G01T7/00 , G01T7/125 , G21F7/00
摘要： A radiation area monitor device/method, utilizing: a radiation sensor; a rotating radiation shield disposed about the radiation sensor, wherein the rotating radiation shield defines one or more ports that are transparent to radiation; and a processor operable for analyzing and storing a radiation fingerprint acquired by the radiation sensor as the rotating radiation shield is rotated about the radiation sensor. Optionally, the radiation sensor includes a gamma and/or neutron radiation sensor. The device/method selectively operates in: a first supervised mode during which a baseline radiation fingerprint is acquired by the radiation sensor as the rotating radiation shield is rotated about the radiation sensor; and a second unsupervised mode during which a subsequent radiation fingerprint is acquired by the radiation sensor as the rotating radiation shield is rotated about the radiation sensor, wherein the subsequent radiation fingerprint is compared to the baseline radiation fingerprint and, if a predetermined difference threshold is exceeded, an alert is issued.

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