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1. 发明授权

US09385595B2 Charge pump regulator circuit 有权
标题翻译：电荷泵调节电路
公开(公告)号：US09385595B2
公开(公告)日：2016-07-05
申请号：US14789745
申请日：2015-07-01
申请人： QUALCOMM SWITCH CORP.
发明人： Stuart B. Molin , Perry Lou , Clint Kemerling
IPC分类号： G05F1/10 , H02M3/07
CPC分类号： H02M3/07 , G05F1/10
摘要： A charge pump regulator circuit includes an oscillator and one or more charge pumps. One or more oscillating signals are generated by the oscillator. Each oscillating signal has a peak-to-peak amplitude that is variable dependent on a variable drive signal. For some embodiments having multiple oscillating signals, each oscillating signal is phase shifted from a preceding oscillating signal. For some embodiments having multiple charge pumps, each charge pump is connected to receive a corresponding one of the oscillating signals. Each charge pump outputs a voltage and current. For some embodiments having multiple charge pumps, the output of each charge pump is phase shifted from the outputs of other charge pumps. A combination of the currents thus produced is provided at about a voltage level to a load.
摘要翻译：电荷泵调节器电路包括振荡器和一个或多个电荷泵。一个或多个振荡信号由振荡器产生。每个振荡信号具有取决于可变驱动信号而变化的峰 - 峰幅度。对于具有多个振荡信号的一些实施例，每个振荡信号从先前的振荡信号相移。对于具有多个电荷泵的一些实施例，每个电荷泵连接以接收相应的一个振荡信号。每个电荷泵输出电压和电流。对于具有多个电荷泵的一些实施例，每个电荷泵的输出从其它电荷泵的输出相移。这样产生的电流的组合提供在大约与负载的电压电平上。

2. 发明授权

US09331098B2 Semiconductor-on-insulator integrated circuit with reduced off-state capacitance 有权
标题翻译：具有降低截止电容的绝缘体上半导体集成电路
公开(公告)号：US09331098B2
公开(公告)日：2016-05-03
申请号：US14335906
申请日：2014-07-19
申请人： QUALCOMM SWITCH CORP.
发明人： Michael A. Stuber , Stuart B. Molin , Chris Brindle
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L27/12 , H01L21/84
CPC分类号： H01L27/1203 , H01L21/76898 , H01L21/84 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit assembly comprises an insulating layer, a semiconductor layer, a handle layer, a metal interconnect layer, and transistors. The insulating layer has a first surface, a second surface, and a hole extending from the first surface to the second surface. The semiconductor layer has a first surface and a second surface, the first surface of the semiconductor layer contacting the first surface of the insulating layer. The handle layer is coupled to the second surface of the semiconductor layer. The metal interconnect layer is coupled to the second surface of the insulating layer, the metal interconnect layer being disposed within the hole in the insulating layer. The transistors are located in the semiconductor layer. The hole in the insulating layer extends to at least the first surface of the semiconductor layer. The metal interconnect layer electrically couples a plurality of the transistors to each other.
摘要翻译：集成电路组件包括绝缘层，半导体层，手柄层，金属互连层和晶体管。绝缘层具有第一表面，第二表面和从第一表面延伸到第二表面的孔。半导体层具有第一表面和第二表面，半导体层的第一表面与绝缘层的第一表面接触。手柄层耦合到半导体层的第二表面。金属互连层耦合到绝缘层的第二表面，金属互连层设置在绝缘层中的孔内。晶体管位于半导体层中。绝缘层中的孔至少延伸到半导体层的第一表面。金属互连层将多个晶体管彼此电耦合。

3. 发明授权

US09269608B2 Bonded semiconductor structure with SiGeC/SiGeBC layer as etch stop 有权
标题翻译：具有SiGeC / SiGeBC层的结合半导体结构作为蚀刻停止
公开(公告)号：US09269608B2
公开(公告)日：2016-02-23
申请号：US14673309
申请日：2015-03-30
申请人： QUALCOMM SWITCH CORP.
发明人： Stephen A. Fanelli
IPC分类号： H01L21/30 , H01L21/46 , H01L21/762 , H01L29/78
CPC分类号： H01L21/76256 , H01L29/7849
摘要： A semiconductor structure is formed with a first wafer (e.g. a handle wafer) and a second wafer (e.g. a bulk silicon wafer) bonded together. The second wafer includes an active layer, which in some embodiments is formed before the two wafers are bonded together. A substrate is removed from the second wafer on an opposite side of the active layer from the first wafer using a SiGeC or SiGeBC layer as an etch stop. In some embodiments, the SiGeC or SiGeBC layer is formed by epitaxial growth, ion implantation or a combination of epitaxial growth and ion implantation.
摘要翻译：半导体结构形成有第一晶片（例如，手柄晶片）和第二晶片（例如，体硅晶片）结合在一起。第二晶片包括有源层，其在一些实施例中在两个晶片接合在一起之前形成。使用SiGeC或SiGeBC层作为蚀刻停止层，从有源层的与第一晶片相反的一侧的第二晶片上去除衬底。在一些实施例中，通过外延生长，离子注入或外延生长和离子注入的组合来形成SiGeC或SiGeBC层。

4. 发明授权

US09368468B2 Thin integrated circuit chip-on-board assembly 有权
标题翻译：薄集成电路芯片组装
公开(公告)号：US09368468B2
公开(公告)日：2016-06-14
申请号：US14586668
申请日：2014-12-30
申请人： QUALCOMM SWITCH CORP.
发明人： Michael A. Stuber , Stuart B. Molin , Mark Drucker , Peter Fowler
IPC分类号： H01L27/01 , H01L23/00
CPC分类号： H01L21/76251 , H01L21/563 , H01L21/6835 , H01L21/76256 , H01L21/78 , H01L21/84 , H01L23/3677 , H01L23/49811 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/32 , H01L24/45 , H01L24/46 , H01L24/48 , H01L24/80 , H01L24/81 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/94 , H01L24/97 , H01L25/0652 , H01L25/0657 , H01L25/50 , H01L27/0688 , H01L27/092 , H01L27/1203 , H01L29/78603 , H01L29/78606 , H01L2221/6834 , H01L2221/6835 , H01L2221/68377 , H01L2221/68381 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0401 , H01L2224/04042 , H01L2224/05611 , H01L2224/05647 , H01L2224/05666 , H01L2224/05684 , H01L2224/11 , H01L2224/11003 , H01L2224/1132 , H01L2224/11334 , H01L2224/1145 , H01L2224/1146 , H01L2224/131 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48611 , H01L2224/48624 , H01L2224/48647 , H01L2224/48666 , H01L2224/48684 , H01L2224/48711 , H01L2224/48724 , H01L2224/48747 , H01L2224/48766 , H01L2224/48784 , H01L2224/48811 , H01L2224/48824 , H01L2224/48847 , H01L2224/48866 , H01L2224/48884 , H01L2224/73257 , H01L2224/80006 , H01L2224/80048 , H01L2224/80896 , H01L2224/81005 , H01L2224/81191 , H01L2224/81205 , H01L2224/81801 , H01L2224/81815 , H01L2224/83005 , H01L2224/831 , H01L2224/8382 , H01L2224/8385 , H01L2224/85205 , H01L2224/92 , H01L2224/9202 , H01L2224/9222 , H01L2224/92242 , H01L2224/92247 , H01L2224/94 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06565 , H01L2924/00011 , H01L2924/00014 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/2064 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2224/80 , H01L2224/83 , H01L2224/81 , H01L2224/85 , H01L2924/014 , H01L2224/03 , H01L2224/1144 , H01L2924/00012 , H01L2224/83205 , H01L2224/45015 , H01L2924/207
摘要： An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface, where the first surface of the insulating layer is less than 10 microns below an upper plane of the integrated circuit assembly. An active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the active layer and formed on the second surface of the insulating layer, and is also electrically connected to a printed circuit board.
摘要翻译：集成电路组件包括具有第一表面和第二表面的绝缘层，其中绝缘层的第一表面低于集成电路组件的上平面以下10微米。有源层接触绝缘层的第一表面。金属接合焊盘与有源层电连接并形成在绝缘层的第二表面上，并且还与印刷电路板电连接。

5. 发明授权

US09362492B2 Integrated phase change switch 有权
标题翻译：集成相变开关
公开(公告)号：US09362492B2
公开(公告)日：2016-06-07
申请号：US14468074
申请日：2014-08-25
申请人： QUALCOMM SWITCH CORP.
发明人： Sinan Goktepeli , Michael A. Stuber
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L45/1206 , H01L27/2418 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/065 , H01L45/126 , H01L45/1286 , H01L45/141 , H01L45/1608 , H01L45/1675
摘要： Various methods and devices that involve phase change material (PCM) switches are disclosed. An exemplary integrated circuit comprises an active layer with a plurality of field effect transistor (FET) channels for a plurality of FETs. The integrated circuit also comprises an interconnect layer comprising a plurality of conductive interconnects. The plurality of conductive interconnects couple the plurality of field effect transistors. The integrated circuit also comprises an insulator layer covering at least a portion of the interconnect layer. The integrated circuit also comprises a channel of a radio-frequency (RF) PCM switch. The channel of the RF PCM switch is formed on the insulator layer.
摘要翻译：公开了涉及相变材料（PCM）开关的各种方法和装置。示例性集成电路包括具有用于多个FET的多个场效应晶体管（FET）通道的有源层。集成电路还包括包括多个导电互连的互连层。多个导电互连耦合多个场效应晶体管。集成电路还包括覆盖互连层的至少一部分的绝缘体层。集成电路还包括射频（RF）PCM开关的通道。 RF PCM开关的通道形成在绝缘体层上。

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