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1. 发明授权

US10964851B2 Single light emitting diode (LED) structure 有权
公开(公告)号：US10964851B2
公开(公告)日：2021-03-30
申请号：US16114377
申请日：2018-08-28
申请人： SemiLEDs Optoelectronics Co., Ltd.
发明人： Trung Tri Doan , David Trung Doan
IPC分类号： H01L33/50 , H01L33/10 , H01L27/15 , H01L25/075 , H01L33/40 , H01L33/08 , H01L33/38
摘要： A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design. The single (LED) structure can also include a substrate for supporting the array, and the substrate can include one or more light shielding holes located between each emitting zone.

2. 发明授权

US08921204B2 Method for fabricating semiconductor dice by separating a substrate from semiconductor structures using multiple laser pulses 有权
标题翻译：通过使用多个激光脉冲从半导体结构分离衬底来制造半导体晶片的方法
公开(公告)号：US08921204B2
公开(公告)日：2014-12-30
申请号：US13936337
申请日：2013-07-08
申请人： SemiLEDS Optoelectronics Co., Ltd.
发明人： Chen-Fu Chu , Hao-Chung Cheng , Trung Tri Doan , Feng-Hsu Fan
IPC分类号： H01L21/784 , H01L33/00 , H01L21/782 , H01L33/44 , H01L33/46
CPC分类号： H01L21/782 , H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46
摘要： A method for fabricating semiconductor dice includes the steps of providing a wafer assembly having a substrate and semiconductor structures on the substrate; and defining the semiconductor dice on the substrate. The method also includes the step of separating the substrate from the semiconductor structures by applying a first laser pulse to each semiconductor die on the substrate having first parameters selected to break an interface between the substrate and the semiconductor structures and then applying a second laser pulse to each semiconductor die on the substrate having second parameters selected to complete separation of the substrate from the semiconductor structures. The method can also include the steps of forming one or more intermediate structures between the semiconductor dice on the substrate configured to protect the semiconductor dice during the separating step.
摘要翻译：制造半导体晶片的方法包括以下步骤：在衬底上提供具有衬底和半导体结构的晶片组件; 并在衬底上限定半导体晶片。该方法还包括通过向基板上的每个半导体管芯施加第一激光脉冲来将衬底与半导体结构分离的步骤，所述第一参数被选择为破坏衬底和半导体结构之间的界面，然后施加第二激光脉冲衬底上的每个半导体管芯具有选择的第二参数以完成衬底与半导体结构的分离。该方法还可以包括在被配置为在分离步骤期间保护半导体晶片的衬底上的半导体晶片之间形成一个或多个中间结构的步骤。

3. 发明授权

US08866185B2 White light LED with multiple encapsulation layers 有权
标题翻译：白光LED具有多个封装层
公开(公告)号：US08866185B2
公开(公告)日：2014-10-21
申请号：US11851216
申请日：2007-09-06
申请人： Jui-Kang Yen , Yung-Wei Chen , Tien-Min Liu
发明人： Jui-Kang Yen , Yung-Wei Chen , Tien-Min Liu
IPC分类号： H01L33/00 , H01L33/50
CPC分类号： H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49109 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： Light-emitting semiconductor devices with multiple encapsulation layers having more uniform white light when compared to conventional light-emitting devices and methods for producing the same are provided. The uniformity of the emitted white light may be quantified by comparing correlated color temperature (CCT) variations between devices, where embodiments of the present invention have a lower CCT variation when compared to conventional devices over a substantial range of light emission angles.
摘要翻译：提供了与传统的发光器件相比具有多个具有更均匀的白光的封装层的发光半导体器件及其制造方法。发射的白光的均匀性可以通过比较器件之间的相关色温（CCT）变化来量化，其中本发明的实施例在相当大的发光角度范围内与常规器件相比具有较低的CCT变化。

4. 发明授权

US08841146B2 Method and system for fabricating light emitting diode (LED) dice with wavelength conversion layers having controlled color characteristics 有权
标题翻译：用于制造具有受控颜色特性的波长转换层的发光二极管（LED）裸片的方法和系统
公开(公告)号：US08841146B2
公开(公告)日：2014-09-23
申请号：US13562519
申请日：2012-07-31
申请人： Jui-Kang Yen , Georg Soerensen , Mark Ewing Tuttle
发明人： Jui-Kang Yen , Georg Soerensen , Mark Ewing Tuttle
IPC分类号： H01L21/00 , H01L33/00 , H01L33/50
CPC分类号： H01L33/501 , H01L33/0095 , H01L2933/0041
摘要： A method for fabricating light emitting diode (LED) dice includes the steps of coating a transparent substrate with a wavelength conversion material, continuously evaluating a correlated color temperature (CCT) of the output electromagnetic radiation produced by the wavelength conversion material and comparing the correlated color temperature (CCT) to a target correlated color temperature (CCT), and controlling the coating step responsive to feedback from the evaluating and comparing step to adjust the correlated color temperature (CCT) to achieve the target correlated color temperature (CCT). A system for fabricating light emitting diode (LED) dice includes a coating system, a monitoring system, and a control system configured to control the coating system to adjust the correlated color temperature (CCT) of the wavelength conversion material on the transparent substrate to achieve the target correlated color temperature (CCT).
摘要翻译：制造发光二极管（LED）晶片的方法包括以下步骤：用波长转换材料涂覆透明衬底，连续评估由波长转换材料产生的输出电磁辐射的相关色温（CCT），并比较相关色彩温度（CCT）到目标相关色温（CCT），并且响应于来自评估和比较步骤的反馈来控制涂层步骤以调节相关色温（CCT）以实现目标相关色温（CCT）。一种用于制造发光二极管（LED）裸片的系统包括涂层系统，监测系统和控制系统，其被配置为控制涂层系统以调节透明衬底上的波长转换材料的相关色温（CCT）以实现目标相关色温（CCT）。

5. 发明授权

US08802469B2 Method of fabricating semiconductor die using handling layer 有权
标题翻译：使用处理层制造半导体管芯的方法
公开(公告)号：US08802469B2
公开(公告)日：2014-08-12
申请号：US13109687
申请日：2011-05-17
申请人： Chen-Fu Chu , Trung Tri Doan , Hao-Chun Cheng , Feng-Hsu Fan , Fu-Hsien Wang
发明人： Chen-Fu Chu , Trung Tri Doan , Hao-Chun Cheng , Feng-Hsu Fan , Fu-Hsien Wang
IPC分类号： H01L21/301
CPC分类号： H01L33/0079 , H01L33/0095
摘要： A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.
摘要翻译：描述了在半导体制造期间分离多个管芯的方法。在包含多个模具的半导体晶片的上表面上，除了存在一块停止电镀材料之外，金属层被沉积。停止电镀材料被消除，并且在整个剩余结构上方形成阻挡层。在阻挡层上方添加牺牲金属元素，然后去除衬底。在消除各个管芯之间的半导体材料之后，将任何期望的接合焊盘和图案化电路添加到与牺牲金属元件相对的半导体表面，在该表面上添加钝化层，然后去除牺牲金属元件。将胶带添加到现在暴露的阻挡层中，去除钝化层，将所得结构翻转，并且将带扩展以分离各个模具。

6. 发明授权

US08735913B2 Light emitting semiconductor structure 有权
标题翻译：发光半导体结构
公开(公告)号：US08735913B2
公开(公告)日：2014-05-27
申请号：US13078541
申请日：2011-04-01
申请人： Wu-Cheng Kuo
发明人： Wu-Cheng Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L25/0756 , H01L2224/73265 , H01L2224/48091 , H01L2924/00014
摘要： The invention provides a light emitting semiconductor structure, which includes a substrate; a first LED chip formed on the substrate; an adhesion layer formed on the first LED chip; and a second light emitting diode chip formed on the adhesion layer, wherein the second LED chip has a first conductive wire which is electrically connected to the substrate.
摘要翻译：本发明提供一种发光半导体结构，其包括基板; 形成在基板上的第一LED芯片; 形成在第一LED芯片上的粘附层; 以及形成在所述粘合层上的第二发光二极管芯片，其中所述第二LED芯片具有电连接到所述基板的第一导线。

7. 发明授权

US08722433B2 Method for fabricating light emitting diode (LED) dice with wavelength conversion layers 有权
标题翻译：用波长转换层制造发光二极管（LED）晶片的方法
公开(公告)号：US08722433B2
公开(公告)日：2014-05-13
申请号：US13902881
申请日：2013-05-27
申请人： SemiLEDS Optoelectronics Co., Ltd.
发明人： Jui-Kang Yen
IPC分类号： H01L21/00 , H01L33/50
CPC分类号： H01L33/50 , H01L33/501 , H01L33/505 , H01L2933/0041
摘要： A method for fabricating light emitting diode (LED) dice includes the steps of mixing wavelength conversion particles in a base material to a first weight percentage, mixing reflective particles in the base material to a second weight percentage, curing the base material to form a wavelength conversion layer having a selected thickness, and attaching the wavelength conversion layer to a die.
摘要翻译：制造发光二极管（LED）模具的方法包括以下步骤：将基材中的波长转换颗粒混合至第一重量百分比，将基材中的反射颗粒混合至第二重量百分比，固化基材以形成波长转换层具有选定的厚度，并将波长转换层附接到管芯。

8. 发明授权

US08642421B2 Light-emitting diode device structure with SixNy layer 有权
标题翻译：具有SixNy层的发光二极管器件结构
公开(公告)号：US08642421B2
公开(公告)日：2014-02-04
申请号：US13355322
申请日：2012-01-20
申请人： Chuong Anh Tran
发明人： Chuong Anh Tran
IPC分类号： H01L21/8234
CPC分类号： H01L33/12 , H01L33/0062 , H01L2933/0091
摘要： A light-emitting diode (LED) structure fabricated with a SixNy layer responsible for providing increased light extraction out of a surface of the LED is provided. Such LED structures fabricated with a SixNy layer may have increased luminous efficiency when compared to conventional LED structures fabricated without a SixNy layer. Methods for creating such LED structures are also provided.
摘要翻译：提供了由SixNy层制造的发光二极管（LED）结构，其负责从LED的表面提供增加的光提取。与没有SixNy层制造的传统LED结构相比，用SixNy层制造的这种LED结构可能具有增加的发光效率。还提供了用于制造这种LED结构的方法。

9. 发明授权

US08614453B2 Chip-type light emitting device having precisely coated wavelength-converting layer and packaged structure thereof 失效
标题翻译：芯片型发光器件具有精确涂覆的波长转换层及其封装结构
公开(公告)号：US08614453B2
公开(公告)日：2013-12-24
申请号：US13118336
申请日：2011-05-27
申请人： Wen-Huang Liu , Chung-Che Dan , Yuan-Hsiao Chang , Hung-Jen Kao
发明人： Wen-Huang Liu , Chung-Che Dan , Yuan-Hsiao Chang , Hung-Jen Kao
IPC分类号： H01L33/00
CPC分类号： H01L23/24 , H01L33/505 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014
摘要： The invention relates to a chip-type light emitting device including one or more light emitting semiconductors and one or more frames provided over a top of the one or more light emitting semiconductors.
摘要翻译：本发明涉及包括一个或多个发光半导体的芯片型发光器件和设置在一个或多个发光半导体的顶部上的一个或多个框架。

10. 发明授权

US08552458B2 Side by side light emitting diode (LED) having separate electrical and heat transfer paths 有权
标题翻译：具有独立的电和热传递路径的并排发光二极管（LED）
公开(公告)号：US08552458B2
公开(公告)日：2013-10-08
申请号：US12824163
申请日：2010-06-26
申请人： Trung Tri Doan , Chen-Fu Chu , Wen-Huang Liu , Feng-Hsu Fan , Hao-Chun Cheng , Fu-Hsien Wang
发明人： Trung Tri Doan , Chen-Fu Chu , Wen-Huang Liu , Feng-Hsu Fan , Hao-Chun Cheng , Fu-Hsien Wang
IPC分类号： H01L33/02
CPC分类号： H01L33/62 , H01L33/641 , H01L2224/73265 , H01L2933/0066
摘要： A light emitting diode includes a thermal conductive substrate having at least one electrical isolation layer configured to provide vertical electrical isolation and a heat transfer path through the substrate from a front side (first side) to a back side (second side) thereof. The light emitting diode includes an anode having a through interconnect, and a cathode having a through interconnect, which are arranged side by side on the substrate. The light emitting diode also includes a LED chip mounted to the substrate between the anode and the cathode. A method for fabricating the light emitting diode includes the steps of providing a thermal conductive substrate having an electrical isolation layer, forming an anode via and a cathode via side by side on a first side of the substrate part way through the substrate, forming an anode through interconnect in the anode via and a cathode through interconnect in the cathode via, thinning the substrate from a second side of the substrate to the anode through interconnect and the cathode through interconnect, and mounting a LED chip to the first side in electrical communication with the cathode through interconnect and the anode through interconnect.
摘要翻译：发光二极管包括具有至少一个电隔离层的导热基板，该隔离层被配置为提供垂直电隔离和从基板的前侧（第一侧）到其后侧（第二侧）穿过基板的热传递路径。发光二极管包括具有贯通互连的阳极和在基板上并排布置的具有通孔互连的阴极。发光二极管还包括安装在阳极和阴极之间的衬底上的LED芯片。一种制造发光二极管的方法包括以下步骤：提供具有电隔离层的导热衬底，在衬底的第一侧经由衬底并排形成阳极通孔和阴极，形成阳极通过在阴极通孔中通过互连在阳极通孔和阴极之间的互连，通过互连将互连和阴极通过互连将衬底从衬底的第二侧延伸到阳极，并将LED芯片安装到与第一侧电连通的第一侧阴极通过互连和阳极通过互连。

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