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1. 发明授权

US09685338B2 Compound semiconductor device and method of manufacturing the same 有权
公开(公告)号：US09685338B2
公开(公告)日：2017-06-20
申请号：US15242226
申请日：2016-08-19
申请人： Transphorm Japan, Inc.
发明人： Yuichi Minoura , Yoshitaka Watanabe
IPC分类号： H01L21/28 , H01L29/40 , H02M3/28 , H01L29/66 , H01L29/78 , H01L23/29 , H01L29/778 , H01L29/20 , H01L23/31 , H02M3/335 , H02M7/04 , H02M1/00 , H01L29/423 , H01L29/51
CPC分类号： H01L21/28264 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/401 , H01L29/402 , H01L29/408 , H01L29/42376 , H01L29/517 , H01L29/66462 , H01L29/66522 , H01L29/7787 , H01L29/78 , H01L2924/0002 , H02M3/28 , H02M3/33576 , H02M7/04 , H02M2001/007 , H01L2924/00
摘要： A compound semiconductor device includes: a compound semiconductor layered structure; a gate electrode formed above the compound semiconductor layered structure; a first protective insulating film that covers a surface of the compound semiconductor layered structure and is made of silicon nitride as a material; a second protective insulating film that covers the gate electrode on the first protective insulating film and is made of silicon oxide as a material; and a third protective insulating film that contains silicon oxynitride and is formed between the first protective insulating film and the second protective insulating film.

2. 发明授权

US09231075B2 Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus 有权
公开(公告)号：US09231075B2
公开(公告)日：2016-01-05
申请号：US14645317
申请日：2015-03-11
申请人： Transphorm Japan, Inc.
发明人： Atsushi Yamada
IPC分类号： H01L29/66 , H01L29/20 , H01L29/423 , H01L29/778 , H01L21/02 , H01L21/56 , H01L29/205
CPC分类号： H01L29/66462 , H01L21/02458 , H01L21/0254 , H01L21/56 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L29/2003 , H01L29/205 , H01L29/42364 , H01L29/778 , H01L29/7783 , H01L29/7787 , H01L2224/04042 , H01L2224/05553 , H01L2224/0603 , H01L2224/291 , H01L2224/32245 , H01L2224/45124 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/014 , H01L2924/00
摘要： A semiconductor device includes a nitride semiconductor stacked structure including a carrier transit layer and a carrier supply layer; a p-type nitride semiconductor layer provided over the nitride semiconductor stacked structure and including an active region and an inactive region; an n-type nitride semiconductor layer provided on the inactive region in the p-type nitride semiconductor layer; and a gate electrode provided over the active region in the p-type nitride semiconductor layer.

3. 发明授权

US08878248B2 Semiconductor device and fabrication method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08878248B2
公开(公告)日：2014-11-04
申请号：US13544023
申请日：2012-07-09
申请人： Tetsuro Ishiguro , Atsushi Yamada
发明人： Tetsuro Ishiguro , Atsushi Yamada
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/778 , H01L29/66 , H01L29/10 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/1029 , H01L29/2003 , H01L29/66462
摘要： A semiconductor device includes a first semiconductor layer formed on a substrate, the first semiconductor containing an impurity element; a second semiconductor layer formed on the first semiconductor layer; a third semiconductor layer formed on the second semiconductor layer; and a gate electrode, a source electrode and a drain electrode that are formed on the third semiconductor layer. In the semiconductor device, the second semiconductor layer includes an impurity diffusion region in which an impurity element contained in the first semiconductor layer is diffused, the impurity diffusion region being located directly beneath the gate electrode and being in contact with the first semiconductor layer, and the impurity element causes the impurity diffusion region to be a p-type impurity diffusion region.
摘要翻译：半导体器件包括形成在衬底上的第一半导体层，第一半导体含有杂质元素; 形成在所述第一半导体层上的第二半导体层; 形成在所述第二半导体层上的第三半导体层; 以及形成在第三半导体层上的栅电极，源电极和漏电极。在半导体器件中，第二半导体层包括杂质扩散区，其中包含在第一半导体层中的杂质元素扩散，杂质扩散区位于栅电极正下方并与第一半导体层接触，杂质元素使杂质扩散区域成为p型杂质扩散区域。

4. 发明授权

US08773176B2 Driving method and driving circuit of schottky type transistor 有权
标题翻译：肖特基型晶体管的驱动方法和驱动电路
公开(公告)号：US08773176B2
公开(公告)日：2014-07-08
申请号：US13730480
申请日：2012-12-28
申请人： Transphorm Japan, Inc.
发明人： Yasumori Miyazaki , Yoshihiro Takemae
IPC分类号： H03K3/00
CPC分类号： H03K17/56 , H03K17/063 , H03K2217/0036
摘要： A driving circuit of a schottky type transistor includes an input terminal supplied with an input signal, and an output terminal connected to a gate of the schottky type transistor. The driving circuit outputs a first voltage lower than a breakdown voltage of the schottky type transistor to the output terminal at the time of rising of the input signal, and thereafter supplies a second voltage higher than the breakdown voltage to a resistance connected to the output terminal.
摘要翻译：肖特基型晶体管的驱动电路包括提供有输入信号的输入端和连接到肖特基型晶体管的栅极的输出端。在输入信号上升时，驱动电路将比肖特基式晶体管的击穿电压低的第一电压输出到输出端子，然后向连接到输出端子的电阻提供比击穿电压高的第二电压。

5. 发明授权

US09425268B2 Compound semiconductor device and method of manufacturing the same 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US09425268B2
公开(公告)日：2016-08-23
申请号：US14010824
申请日：2013-08-27
申请人： Transphorm Japan, Inc.
发明人： Yuichi Minoura , Yoshitaka Watanabe
IPC分类号： H01L29/40 , H02M3/28 , H01L21/28 , H01L29/66 , H01L29/78 , H01L29/778 , H01L23/31 , H02M3/335 , H02M7/04 , H02M1/00 , H01L29/423 , H01L23/29 , H01L29/51 , H01L29/20
CPC分类号： H01L21/28264 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/401 , H01L29/402 , H01L29/408 , H01L29/42376 , H01L29/517 , H01L29/66462 , H01L29/66522 , H01L29/7787 , H01L29/78 , H01L2924/0002 , H02M3/28 , H02M3/33576 , H02M7/04 , H02M2001/007 , H01L2924/00
摘要： A compound semiconductor device includes: a compound semiconductor layered structure; a gate electrode formed above the compound semiconductor layered structure; a first protective insulating film that covers a surface of the compound semiconductor layered structure and is made of silicon nitride as a material; a second protective insulating film that covers the gate electrode on the first protective insulating film and is made of silicon oxide as a material; and a third protective insulating film that contains silicon oxynitride and is formed between the first protective insulating film and the second protective insulating film.
摘要翻译：化合物半导体器件包括：化合物半导体层状结构; 形成在化合物半导体层叠结构之上的栅电极; 覆盖化合物半导体层叠结构的表面并由氮化硅作为材料的第一保护绝缘膜; 第二保护绝缘膜，覆盖第一保护绝缘膜上的栅电极，由氧化硅作为材料制成; 以及包含氮氧化硅并形成在第一保护绝缘膜和第二保护绝缘膜之间的第三保护绝缘膜。

6. 发明授权

US08962409B2 Semiconductor device and fabrication method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08962409B2
公开(公告)日：2015-02-24
申请号：US13569536
申请日：2012-08-08
申请人： Shuichi Tomabechi
发明人： Shuichi Tomabechi
IPC分类号： H01L21/337 , H01L29/778 , H01L29/66 , H01L29/10 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/1029 , H01L29/2003 , H01L29/66462
摘要： A method for fabricating a semiconductor device is disclosed. The method includes sequentially forming a first semiconductor layer, a second semiconductor layer and a semiconductor cap layer containing a p-type impurity element on a substrate, forming a dielectric layer having an opening after the forming of the semiconductor cap layer, forming a third semiconductor layer containing a p-type impurity element on the semiconductor cap layer exposed from the opening of the dielectric layer, and forming a gate electrode on the third semiconductor layer.
摘要翻译：公开了一种制造半导体器件的方法。该方法包括在基板上依次形成第一半导体层，第二半导体层和含有p型杂质元素的半导体盖层，形成在形成半导体盖层之后具有开口的电介质层，形成第三半导体在从电介质层的开口露出的半导体盖层上含有p型杂质元素的层，在第三半导体层上形成栅电极。

7. 发明授权

US08836301B2 Power supply unit 有权
标题翻译：供电单元
公开(公告)号：US08836301B2
公开(公告)日：2014-09-16
申请号：US13459916
申请日：2012-04-30
申请人： Ken Shono
发明人： Ken Shono
IPC分类号： H02M1/084 , H02M3/158
CPC分类号： H02M3/1584
摘要： A power supply unit includes first and second sub-power supply module, each having first and second inductor, first and second switching element which switches current supplied from an input power supply to the first and second inductor, first and second drive control circuit which drives the first and second switching element, and first and second sub-output terminal to which current is output from the first and second inductor respectively; and a common output terminal to which the first sub-output terminal and the second sub-output terminal are coupled, wherein an ON operation of the first switching element is controlled depending on whether or not an output voltage of the common output terminal is lower than a first voltage, and an ON operation of the second switching element is controlled depending on whether or not the output voltage is lower than a second voltage, which is different from the first voltage.
摘要翻译：电源单元包括第一和第二子电源模块，每个具有第一和第二电感器，第一和第二开关元件，其将从输入电源提供的电流切换到第一和第二电感器;第一和第二驱动控制电路，其驱动第一和第二开关元件以及分别从第一和第二电感器输出电流的第一和第二子输出端子; 以及第一副输出端子和第二副输出端子耦合到其上的公共输出端子，其中根据公共输出端子的输出电压是否低于第一开关元件的输出电压来控制第一开关元件的导通操作根据输出电压是否低于与第一电压不同的第二电压来控制第二开关元件的第一电压和导通操作。

8. 发明授权

US09620616B2 Semiconductor device and method of manufacturing a semiconductor device 有权
公开(公告)号：US09620616B2
公开(公告)日：2017-04-11
申请号：US14582583
申请日：2014-12-24
申请人： Transphorm Japan, Inc.
发明人： Atsushi Yamada , Kenji Nukui
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/66 , H01L29/20 , H01L29/778 , H01L29/423 , H01L29/10
CPC分类号： H01L29/66462 , H01L29/1066 , H01L29/2003 , H01L29/42372 , H01L29/66431 , H01L29/778 , H01L29/7787
摘要： A method of manufacturing a semiconductor device includes laminating and forming an electron transit layer, an electron supplying layer, an etching stop layer, and a p-type film on a substrate sequentially, the p-type film being formed of a nitride semiconductor material that includes Al doped with an impurity element that attains p-type, the etching stop layer being formed of a material that includes GaN, removing the p-type film in an area except an area where a gate electrode is to be formed, by dry etching to form a p-type layer in the area where the gate electrode is to be formed, the dry etching being conducted while plasma emission in the dry etching is observed, the dry etching being stopped after the dry etching is started and plasma emission originating from Al is not observed, and forming the gate electrode on the p-type layer.

9. 发明授权

US09136107B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US09136107B2
公开(公告)日：2015-09-15
申请号：US14098853
申请日：2013-12-06
申请人： Transphorm Japan, Inc.
发明人： Yoshiyuki Katani , Shinichi Akiyama
IPC分类号： H01L29/66 , H01L21/02 , H01L29/778 , H01L29/20
CPC分类号： H01L21/02112 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A method for manufacturing a semiconductor device includes forming an electron transit layer on a semiconductor substrate, forming an electron supply layer on the electron transit layer, forming a cap layer on the electron supply layer, forming a protection layer on the cap layer, the protection layer having an opening part, through which a part of the cap layer is exposed, and forming an oxidation film on an exposed surface of the cap layer by a wet process.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底上形成电子传输层，在电子转移层上形成电子供给层，在电子供给层上形成覆盖层，在覆盖层上形成保护层，保护层层，具有开口部，盖层的一部分露出，通过湿法在盖层的露出面上形成氧化膜。

10. 发明授权

US09099545B2 Compound semiconductor device and method of manufacturing same 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US09099545B2
公开(公告)日：2015-08-04
申请号：US14034043
申请日：2013-09-23
申请人： Transphorm Japan, Inc.
发明人： Shinichi Akiyama , Kenji Nukui , Mutsumi Katou , Yoshitaka Watanabe , Tetsuya Itou , Yoichi Fujisawa , Toshiya Sato , Tsutomu Hosoda , Yuuichi Satou
IPC分类号： H01L21/336 , H01L21/283 , H01L29/778 , H01L21/324 , H01L29/10 , H01L29/417 , H01L29/66 , H01L29/423 , H01L29/20
CPC分类号： H01L29/778 , H01L21/324 , H01L29/1029 , H01L29/2003 , H01L29/41725 , H01L29/4236 , H01L29/66431 , H01L29/66462 , H01L29/7787
摘要： A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.
摘要翻译：化合物半导体器件包括：衬底; 形成在所述基板上的化合物半导体层; 形成在所述化合物半导体层上的第一绝缘膜; 形成在所述第一绝缘膜上的第二绝缘膜; 以及栅电极，源电极和漏电极，各自形成在化合物半导体层上，其中栅电极由至少一栅极绝缘体填充有第一导电材料的第一开口形成，第一开口形成在所述第一绝缘膜中并且被配置为部分地暴露所述化合物半导体层，并且其中所述源电极和所述漏电极由填充有至少第二导电材料的一对第二开口形成，并且所述第二开口形成在至少所述第二绝缘膜和所述第一绝缘膜，并且被配置为部分地暴露所述化合物半导体层。

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