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1. 发明授权

US11641399B2 Smart servo motor and actuator assembly using a plurality of smart servo motors 有权
公开(公告)号：US11641399B2
公开(公告)日：2023-05-02
申请号：US17052896
申请日：2018-05-14
申请人： RobotShop Japan Co., Ltd.
发明人： Yves Lacroix
IPC分类号： H04L67/12 , G05B19/4155
摘要： Provided is a smart servo motor capable of allowing communication without using any unique ID and an actuator assembly using such smart servo motors. A main controller 11 is connected to a plurality of smart servo motors 1-1 . . . 1-N via a single communication path 13, where the main controller 11 can communicate with the individual smart servo motors using their unique IDs. Operating a selector of one smart servo motor 1-u permits communication between the smart servo motor 1-u and the main controller 11 with a special ID such as code “255”. With this communication, the main controller 11 can retrieve the unique ID assigned to the smart servo motor 1-u.

2. 发明授权

US11640199B2 Method for operating an assist system for a vehicle, and assist system 有权
公开(公告)号：US11640199B2
公开(公告)日：2023-05-02
申请号：US16796706
申请日：2020-02-20
申请人： Bayerische Motoren Werke Aktiengesellschaft
发明人： Florian Bade , Moritz Blume , Martin Buchner , Julia Niemann , Michael Wolfram , Joris Wolters
IPC分类号： G06F3/01 , G06T7/80 , G06V20/59 , B60W40/08 , B60W50/00
摘要： A method for operating an assist system for a vehicle that includes a sensor device for detecting a directional characteristic value that is representative of a viewing direction of a driver of the vehicle. In the method, a calibration characteristic value is provided that is representative of a rest viewing direction of a standard driver. At least one initial direction characteristic value is determined, in dependence of which a rest characteristic value is determined that is representative of a rest viewing direction of the driver. A transformation characteristic value is determined based on the rest characteristic value, which is representative of a transformation between the rest characteristic value and the calibration characteristic value. Based on the transformation characteristic value, subsequently determined directional characteristic values are corrected.

3. 发明授权

US11639616B2 Locking device having shape memory alloy for an energy storage device of a motor vehicle and method for operating such a locking device 有权
公开(公告)号：US11639616B2
公开(公告)日：2023-05-02
申请号：US16420454
申请日：2019-05-23
申请人： Bayerische Motoren Werke Aktiengesellschaft
发明人： Johannes Dahmer , Andre Lajtkep , Martin Peteratzinger , Simon Schoenleber
IPC分类号： E05B47/00 , B60L53/16 , E05B83/28 , F03G7/06 , B60L53/18 , E05B81/04
摘要： A locking device for an energy storage device of a motor vehicle, includes a locking element, which is adjustable based on a control signal, by an adjusting device between a locking position, in which the locking element engages with a latch receptacle, and a release position, in which the locking element is out of engagement with the latch receptacle. The adjusting device has an adjusting element made of a shape memory alloy. The shape change enables the locking element to be adjustable between the locking position and the release position.

4. 外观设计

USD984336S1 Front fender for a vehicle 有权
公开(公告)号：USD984336S1
公开(公告)日：2023-04-25
申请号：US29765983
申请日：2021-01-13
申请人： Bayerische Motoren Werke Aktiengesellschaft
设计人： Tianyuan Li

5. 发明授权

US11638196B2 Path, path information processing method and device, storage medium and electronic device 有权
公开(公告)号：US11638196B2
公开(公告)日：2023-04-25
申请号：US17217318
申请日：2021-03-30
申请人： ZTE Corporation
发明人： Shuang Liang , Jinguo Zhu , Zhijun Li
IPC分类号： H04W40/02 , H04L45/02 , H04W8/22
摘要： Provided are a path, a path information processing method and device, a storage medium, and an electronic device. The path processing method includes: receiving, by an intermediate-session management function (I-SMF), a first message sent by an anchor-session management function (A-SMF), where the first message includes context information; and determining, by the I-SMF according to the context information, a mode corresponding to a data path established by the I-SMF and selecting a data path.

6. 发明授权

US11636613B2 Computer application method and apparatus for generating three-dimensional face model, computer device, and storage medium 有权
公开(公告)号：US11636613B2
公开(公告)日：2023-04-25
申请号：US17337909
申请日：2021-06-03
申请人： Tencent Technology (Shenzhen) Company Limited
发明人： Yajing Chen , Yibing Song , Yonggen Ling , Linchao Bao , Wei Liu
IPC分类号： G06T7/73 , G06T17/00 , G06T7/50 , G06V40/16 , G06F18/213 , G06F18/214
摘要： A computer application method for generating a three-dimensional (3D) face model is provided, performed by a face model generation model running on a computer device, the method including: obtaining a two-dimensional (2D) face image as input to the face model generation model; extracting global features and local features of the 2D face image; obtaining a 3D face model parameter based on the global features and the local features; and outputting a 3D face model corresponding to the 2D face image based on the 3D face model parameter.

7. 发明授权

US11633063B2 Air fryer 有权
公开(公告)号：US11633063B2
公开(公告)日：2023-04-25
申请号：US16745408
申请日：2020-01-17
申请人： Instant Brands Inc.
发明人： YuDe Han , Yi Qin , HuaFeng Li
IPC分类号： A47J37/06
摘要： An air fryer comprises a main body and a lid assembly. The lid assembly is removable from the main body for placement on a countertop, and comprises a hot air assembly, an outer lid shell covering the hot air assembly, and a support member downwardly extending from the outer lid shell. Upon placing the lid assembly on the countertop, the support member elevates the lid assembly so that the hot air assembly is elevated at a height from the countertop, thereby avoiding burns on the countertop. Upon removal of the lid assembly from the main body, the lid assembly can be supported to the countertop by using a support leg portion of the support member, allowing convenient placement of the lid assembly. The support leg portion elevates the hot air assembly at a predetermined height from the countertop thereby protecting the countertop from burns.

8. 发明授权

US11632047B2 Electronic circuit, module, and system 有权
公开(公告)号：US11632047B2
公开(公告)日：2023-04-18
申请号：US17183994
申请日：2021-02-24
申请人： Seiko Holdings Kabushiki Kaisha (Trading As Seiko Holdings Corporation) , ABLIC Inc.
发明人： Yoshifumi Yoshida , Noboru Kawai , Fumiyasu Utsunomiya
IPC分类号： H02M3/158 , H04B1/04 , H02M1/088
摘要： A convenient electronic circuit in which a switch is able to be switched through electric power obtained using weak radio waves is provided. An electronic circuit includes a switch which is connected between a power supply configured to output direct current (DC) electric power and a load driven through DC electric power supplied from the power supply and which switches a connection state between the power supply and the load from a non-conduction state to a conduction state; a power conversion circuit which includes a power input terminal to which electric power obtained through radio waves received by an antenna is input and a DC power output terminal configured to output DC electric power and which converts electric power input to the power input terminal into DC electric power and outputs the converted DC electric power from the DC power output terminal; and a control circuit configured to control a connection state of the switch to be in a conduction state when the power conversion circuit outputs DC electric power. The power conversion circuit includes at least a first capacitor, a first diode, a second capacitor, and a second diode.

9. 发明授权

US11631767B2 Semiconductor structure and method of forming a semiconductor structure 有权
公开(公告)号：US11631767B2
公开(公告)日：2023-04-18
申请号：US17470104
申请日：2021-09-09
申请人： Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Fei Zhou
IPC分类号： H01L21/8234 , H01L29/78 , H01L21/308 , H01L29/66
摘要： A semiconductor structure and a method for forming a semiconductor structure are disclosed. One form a semiconductor structure includes: a substrate, comprising a first region used to form a well region and a second region used to form a drift region, wherein the first region is adjacent to the second region; and a fin, protruding out of the substrate, wherein the fins comprise first fins located at a junction of the first region and the second region and second fins located on the second region, and a quantity of the second fins is greater than a quantity of the first fins.

10. 发明授权

US11631743B2 Semiconductor structure and forming method thereof 有权
公开(公告)号：US11631743B2
公开(公告)日：2023-04-18
申请号：US17223238
申请日：2021-04-06
申请人： Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
发明人： Abraham Yoo , Jisong Jin
IPC分类号： H01L29/417 , H01L23/535 , H01L29/78 , H01L21/768 , H01L29/66 , H01L29/40 , H01L23/522
摘要： A semiconductor structure and a forming method of a semiconductor structure are provided. One form of the forming method includes: providing a base, where a discrete gate structure is formed on the base, a spacer is formed on a side wall of the gate structure, and a source/drain doped layer is formed in the base on two sides of the gate structure, and a bottom dielectric layer covering the source/drain doped layer is formed on the two sides of the gate structure; forming a bottom source/drain plug running through the bottom dielectric layer above the source/drain doped layer, a source/drain cap layer located on a top surface of the bottom source/drain plug, a gate cap layer located on a top surface of the gate structure, and an etching barrier layer located between the gate cap layer and the source/drain cap layer and covering a top surface of the spacer; forming a top dielectric layer covering the gate cap layer, the source/drain cap layer, and the etching barrier layer on the bottom dielectric layer; forming a top source/drain plug that runs through the source/drain cap layer and the top dielectric layer and that is in contact with the bottom source/drain plug; and forming a gate plug that runs through the gate cap layer and the top dielectric layer and that is in contact with the gate structure. Embodiments of the present disclosure help improve the performance of the semiconductor structure.

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