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    • 2. 发明授权
    • Separated unit pixel preventing sensitivity reduction and the driving method using the unit pixel
    • 分离的单位像素防止灵敏度降低和使用单位像素的驱动方法
    • US08274032B2
    • 2012-09-25
    • US12670603
    • 2008-08-04
    • Do-Young Lee
    • Do-Young Lee
    • H01L27/00
    • H01L27/1463H01L27/14643
    • Provided are a separation type unit pixel for preventing sensitivity reduction to prevent a depletion area from decreasing and a method of driving the unit pixel. The separation type unit pixel for preventing sensitivity reduction includes: a substrate; a photodiode constructed with a junction of a P-type diffusion area and an N-type diffusion area which are formed under a surface of the substrate in a vertical direction; a gate electrode conductor which is disposed on an upper portion of the surface of the substrate to be adjacent to the N-type or P-type diffusion area; a floating diffusion area formed to be adjacent to another surface of the gate electrode conductor; and a sensitivity reduction preventing conductor disposed on an upper portion of the photodiode area to cover the photodiode area.
    • 提供了用于防止灵敏度降低以防止耗尽区域减小的分离型单元像素和驱动单位像素的方法。 用于防止灵敏度降低的分离型单位像素包括:基板; 由P型扩散区域和N型扩散区域的接合部构成的光电二极管,其形成在基板的表面的垂直方向上; 栅电极导体,其设置在与所述N型或P型扩散区相邻的所述衬底的表面的上部; 形成为与栅电极导体的另一表面相邻的浮动扩散区域; 以及设置在光电二极管区域的上部以覆盖光电二极管区域的灵敏度降低防止导体。
    • 3. 发明授权
    • 3 transistors 4 shared step and repeat unit cell and 3 transistors 4 shared image sensor including the unit cells
    • 3个晶体管4个共享步进和重复单元和3个晶体管4个共享图像传感器,包括单位单元
    • US08222586B2
    • 2012-07-17
    • US12520091
    • 2007-12-18
    • Do-Young Lee
    • Do-Young Lee
    • H04N3/14H04N5/335
    • H04N9/045H01L27/14641H04N5/37457
    • A 3T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including three transistors and a 3T-4S image sensor including the 3T-4S step & repeat unit cell are provided. The 3T-4S step & repeat unit cell includes first to fourth photodiodes. A first shared image sensor unit cell is obtained by combining the first and second photodiodes with four transistors. A second shared image sensor unit cell is obtained by combining the third and fourth photodiodes with four transistors. Signals corresponding to images incident onto the first and second photodiodes are output through a first common detection line. Signals corresponding to images incident onto the third and fourth photodiodes are output through a second common detection line. A terminal of each of the four photodiodes is connected to a first voltage source. Conversion voltages corresponding to image signals incident onto two photodiodes via green filters are output through a common detection line. Conversion voltages corresponding to image signals incident onto the other two photodiodes via red and blue filters are output through another common detection line.
    • 提供了通过组合包括三个晶体管的四个图像传感器单元电池和包括3T-4S步骤和重复单元的3T-4S图像传感器获得的3T-4S步进和重复单位单元。 3T-4S步进重复单元包括第一至第四光电二极管。 通过将第一和第二光电二极管与四个晶体管组合来获得第一共享图像传感器单元。 通过将第三和第四光电二极管与四个晶体管组合来获得第二共享图像传感器单元。 通过第一公共检测线输出与入射到第一和第二光电二极管上的图像相对应的信号。 通过第二共同检测线输出与入射到第三和第四光电二极管上的图像相对应的信号。 四个光电二极管中的每一个的端子连接到第一电压源。 通过公共检测线输出对应于通过绿色滤波器入射到两个光电二极管上的图像信号的转换电压。 经由红色和蓝色滤色器入射到另外两个光电二极管上的对应于图像信号的转换电压通过另一个公共检测线输出。
    • 5. 发明申请
    • UNIT PIXEL IMPROVING IMAGE SENSITIVITY AND DYNAMIC RANGE
    • 单元像素提高图像灵敏度和动态范围
    • US20100200895A1
    • 2010-08-12
    • US12671249
    • 2008-08-04
    • Do-Young Lee
    • Do-Young Lee
    • H01L27/146H01L31/18
    • H01L27/14601H01L27/14643H01L27/14689
    • Provided are a unit pixel for improving sensitivity in low illumination conditions and a method of manufacturing the unit pixel. The unit pixel includes: a photodiode generating image charges corresponding to an image signal; a transfer transistor transferring the image charges to a floating diffusion area; and a reset transistor having a terminal connected to the floating diffusion area and the other terminal applied with a power supply, wherein concentration of impurity ions implanted into the floating diffusion area is lower than concentration of impurity ions implanted into a diffusion area of the reset transistor applied with the power supply.
    • 提供了用于在低照度条件下提高灵敏度的单位像素和制造单位像素的方法。 单位像素包括:光电二极管,产生对应于图像信号的图像电荷; 将图像电荷转移到浮动扩散区域的传输晶体管; 以及复位晶体管,其具有连接到所述浮动扩散区域的端子,并且施加有电源的另一端子,其中注入到所述浮动扩散区域中的杂质离子的浓度低于注入到所述复位晶体管的扩散区域中的杂质离子的浓度 应用电源。
    • 6. 发明申请
    • 3 TRANSISTORS 4 SHARED STEP & REPEAT UNIT CELL AND 3 TRANSISTORS 4 SHARED IMAGE SENSOR INCLUDING THE UNIT CELLS
    • 3晶体管4共享步骤和重复单元单元和3个晶体管4共享的图像传感器,包括单元电池
    • US20100200729A1
    • 2010-08-12
    • US12520091
    • 2007-12-18
    • Do-Young Lee
    • Do-Young Lee
    • H01L27/146H01L31/102H01L31/0232
    • H04N9/045H01L27/14641H04N5/37457
    • A 3T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including three transistors and a 3T-4S image sensor including the 3T-4S step & repeat unit cell are provided. The 3T-4S step & repeat unit cell includes first to fourth photodiodes. A first shared image sensor unit cell is obtained by combining the first and second photodiodes with four transistors. A second shared image sensor unit cell is obtained by combining the third and fourth photodiodes with four transistors. Signals corresponding to images incident onto the first and second photodiodes are output through a first common detection line. Signals corresponding to images incident onto the third and fourth photodiodes are output through a second common detection line. A terminal of each of the four photodiodes is connected to a first voltage source. Conversion voltages corresponding to image signals incident onto two photodiodes via green filters are output through a common detection line. Conversion voltages corresponding to image signals incident onto the other two photodiodes via red and blue filters are output through another common detection line.
    • 提供了通过组合包括三个晶体管的四个图像传感器单元电池和包括3T-4S步骤和重复单元的3T-4S图像传感器获得的3T-4S步进和重复单位单元。 3T-4S步进重复单元包括第一至第四光电二极管。 通过将第一和第二光电二极管与四个晶体管组合来获得第一共享图像传感器单元。 通过将第三和第四光电二极管与四个晶体管组合来获得第二共享图像传感器单元。 通过第一公共检测线输出与入射到第一和第二光电二极管上的图像相对应的信号。 通过第二共同检测线输出与入射到第三和第四光电二极管上的图像相对应的信号。 四个光电二极管中的每一个的端子连接到第一电压源。 通过公共检测线输出对应于通过绿色滤波器入射到两个光电二极管上的图像信号的转换电压。 经由红色和蓝色滤色器入射到另外两个光电二极管上的对应于图像信号的转换电压通过另一个公共检测线输出。
    • 8. 发明申请
    • CHIP-STACKED IMAGE SENSOR
    • 芯片堆叠图像传感器
    • US20100019130A1
    • 2010-01-28
    • US12529499
    • 2008-03-21
    • Do-Young Lee
    • Do-Young Lee
    • H01L27/00
    • H04N5/37457H01L27/14634H01L27/1464H01L27/14641
    • A chip-stacked image sensor obtained by embodying an image sensor cell in two chips and combining the chips with each other is provided. The chip-stacked image sensor includes first and second semiconductor chips. The first semiconductor chip includes a plurality of image signal sensing cells for generating image charges corresponding to image signals sensed by at least four photodiodes and outputting the generated image charges through at least two common terminals and a plurality of image charge transmission pads. The second semiconductor chip includes a plurality of image signal conversion cells for converting the image signals into electrical signals and a plurality of image charge receiving pads. Here, the image charges generated by the image signal sensing cells are transmitted to corresponding image signal conversion cells via the plurality of image charge transmission pads and the plurality of image charge receiving pads.
    • 提供了通过将图像传感器单元置于两个芯片中并将芯片彼此组合而获得的芯片堆叠图像传感器。 芯片堆叠图像传感器包括第一和第二半导体芯片。 第一半导体芯片包括多个图像信号感测单元,用于产生对应于由至少四个光电二极管感测的图像信号的图像电荷,并且通过至少两个公共端子和多个图像电荷传输垫输出产生的图像电荷。 第二半导体芯片包括用于将图像信号转换为电信号的多个图像信号转换单元和多个图像电荷接收垫。 这里,由图像信号感测单元产生的图像电荷经由多个图像电荷传输垫和多个图像电荷接收垫被发送到相应的图像信号转换单元。
    • 9. 发明申请
    • 4 TRANSISTORS 4 SHARED STEP & REPEAT UNIT CELL AND 4 TRANSISTORS 4 SHARED IMAGE SENSOR INCLUDING THE UNIT CELLS
    • 4晶体管4共享步骤和重复单元单元和4个晶体管4共享的图像传感器,包括单元电池
    • US20090309008A1
    • 2009-12-17
    • US12520089
    • 2007-12-07
    • Do-Young Lee
    • Do-Young Lee
    • H01L27/00G06F17/50B32B3/00
    • H04N9/045H01L27/14603H01L27/14609H01L27/14641H04N5/335H04N5/3741Y10T428/24479Y10T428/24802
    • A 4T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including four transistors and a 4T-4S image sensor including the 4T-4S step & repeat unit cell are provided. The 4T-4S step & repeat unit cell includes first and second shared image sensor unit cells. The first shared image sensor unit cell includes first and third photodiodes and five transistors. The second shared image sensor unit cell includes second and fourth photodiodes and five transistors. The second photodiode is disposed over the first photodiode. The third photodiode is disposed at a side of the second photodiode. A terminal of each of the fourth photodiode is connected to a first voltage source. Signals corresponding to images incident onto the first and third photodiodes are output through a first common detection line OUT1. Signals corresponding to images incident onto the second and fourth photodiodes are output through a second common detection line OUT2.
    • 提供了通过组合包括四个晶体管的四个图像传感器单元电池和包括4T-4S步骤和重复单元的4T-4S图像传感器而获得的4T-4S步进和重复单位单元。 4T-4S步进重复单元包括第一和第二共享图像传感器单元。 第一共享图像传感器单元包括第一和第三光电二极管和五个晶体管。 第二共享图像传感器单元包括第二和第四光电二极管和五个晶体管。 第二光电二极管设置在第一光电二极管的上方。 第三光电二极管设置在第二光电二极管的一侧。 第四光电二极管中的每一个的端子连接到第一电压源。 通过第一公共检测线OUT1输出与入射到第一和第三光电二极管上的图像相对应的信号。 通过第二公共检测线OUT2输出与入射到第二和第四光电二极管上的图像相对应的信号。