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1. 发明授权

US08440494B2 Single-crystalline silicon alkaline texturing with glycerol or ethylene glycol additives 有权
标题翻译：甘油或乙二醇添加剂的单晶硅碱性织构
公开(公告)号：US08440494B2
公开(公告)日：2013-05-14
申请号：US13112465
申请日：2011-05-20
申请人： Kathryn C. Fisher , Jun Liu , Satyavolu S. Papa Rao , George G. Totir , James Vichiconti
发明人： Kathryn C. Fisher , Jun Liu , Satyavolu S. Papa Rao , George G. Totir , James Vichiconti
IPC分类号： H01L21/00
CPC分类号： C09K13/02 , H01L31/02363 , Y02E10/50
摘要： Alternative additives that can be used in place of isopropyl alcohol in aqueous alkaline etchant solutions for texturing a surface of a single-crystalline silicon substrate are provided. The alternative additives do not have volatile constituents, yet can be used in an aqueous alkaline etchant solution to provide a pyramidal shaped texture surface to the single-crystalline silicon substrate that is exposed to such an etchant solution. Also provided is a method of forming a textured silicon surface. The method includes immersing a single-crystalline silicon substrate into an etchant solution to form a pyramid shaped textured surface on the single-crystalline silicon substrate. The etchant solution includes an alkaline component, silicon (etched into the solution as a bath conditioner) and glycerol or ethylene glycol as an additive. The textured surface of the single-crystalline silicon substrate has (111) faces that are now exposed.
摘要翻译：提供了可用于代替异丙醇的水性碱性蚀刻剂溶液中用于织构单晶硅衬底的表面的替代添加剂。替代的添加剂不具有挥发性成分，但也可用于碱性蚀刻剂水溶液中以向暴露于这种蚀刻剂溶液的单晶硅衬底提供金字塔形的纹理表面。还提供了形成纹理硅表面的方法。该方法包括将单晶硅衬底浸入蚀刻剂溶液中以在单晶硅衬底上形成棱锥形织构表面。蚀刻剂溶液包括碱性组分，硅（作为浴调节剂蚀刻到溶液中）和甘油或乙二醇作为添加剂。单晶硅衬底的纹理表面具有现在暴露的（111）面。

2. 发明申请

US20130014812A1 PHOTOVOLTAIC DEVICE WITH ALUMINUM PLATED BACK SURFACE FIELD AND METHOD OF FORMING SAME 有权
标题翻译：具有铝背板表面的光伏器件及其形成方法
公开(公告)号：US20130014812A1
公开(公告)日：2013-01-17
申请号：US13182880
申请日：2011-07-14
申请人： Kathryn C. Fisher , Qiang Huang , Satyavolu S. Papa Rao , Ming-Ling Yeh
发明人： Kathryn C. Fisher , Qiang Huang , Satyavolu S. Papa Rao , Ming-Ling Yeh
IPC分类号： H01L31/06 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/068 , Y02E10/547
摘要： A photovoltaic device is provided that includes a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one on top of the other. A plurality of patterned antireflective coating layers is located on a p-type semiconductor surface of the semiconductor substrate, wherein at least one portion of the p-type semiconductor surface of the semiconductor substrate is exposed. Aluminum is located directly on the at least one portion of the p-type semiconductor surface of the semiconductor substrate that is exposed.
摘要翻译：提供一种光电器件，其包括半导体衬底，该半导体衬底包括具有p型半导体部分的p-n结和在另一个顶部上的n型半导体部分。多个图案化抗反射涂层位于半导体衬底的p型半导体表面上，其中露出半导体衬底的p型半导体表面的至少一部分。铝直接位于暴露的半导体衬底的p型半导体表面的至少一部分上。

3. 发明授权

US08962374B2 Integration of a titania layer in an anti-reflective coating 有权
公开(公告)号：US08962374B2
公开(公告)日：2015-02-24
申请号：US13534037
申请日：2012-06-27
申请人： Satyavolu S. Papa Rao , Kathryn C. Fisher , Harold J. Hovel , Qiang Huang , Susan Huang , Young-Hee Kim
发明人： Satyavolu S. Papa Rao , Kathryn C. Fisher , Harold J. Hovel , Qiang Huang , Susan Huang , Young-Hee Kim
IPC分类号： H01L21/00
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A stack of a first anti-reflective coating (ARC) layer and a titanium layer is formed on a front surface of a semiconductor substrate including a p-n junction, and is subsequently patterned so that a semiconductor surface is physically exposed in metal contact regions of the front surface of the semiconductor substrate. The remaining portion of the titanium layer is converted into a titania layer by oxidation. A metal layer is plated on the metal contact regions, and a copper line is subsequently plated on the metal layer or a metal semiconductor alloy derived from the metal layer. A second ARC layer is deposited over the titania layer and the copper line, and is subsequently patterned to provide electrical contact to the copper line.

4. 发明授权

US08492899B2 Method to electrodeposit nickel on silicon for forming controllable nickel silicide 有权
标题翻译：在镍上电沉积镍以形成可控硅化镍的方法
公开(公告)号：US08492899B2
公开(公告)日：2013-07-23
申请号：US12904597
申请日：2010-10-14
申请人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Xiaoyan Shao
发明人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Xiaoyan Shao
IPC分类号： H01L29/40 , H01L23/52 , H01L23/48 , H01L21/44
CPC分类号： H01L21/324 , H01L21/28518 , H01L21/2885 , H01L31/022425 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present disclosure relates to an improved method of providing a Ni silicide metal contact on a silicon surface by electrodepositing a Ni film on a silicon substrate. The improved method results in a controllable silicide formation wherein the silicide has a uniform thickness. The metal contacts may be incorporated in, for example, CMOS devices, MEM (micro-electro-mechanical) devices, and photovoltaic cells.
摘要翻译：本公开涉及通过在硅衬底上电沉积Ni膜而在硅表面上提供Ni硅化物金属接触的改进方法。改进的方法导致可控硅化物形成，其中硅化物具有均匀的厚度。金属触点可以结合在例如CMOS器件，MEM（微电机械）器件和光伏电池中。

5. 发明申请

US20120318341A1 PROCESSES FOR UNIFORM METAL SEMICONDUCTOR ALLOY FORMATION FOR FRONT SIDE CONTACT METALLIZATION AND PHOTOVOLTAIC DEVICE FORMED THEREFROM 有权
标题翻译：用于前金属半导体合金形成的方法用于形成前端接触金属化和其形成的光电器件
公开(公告)号：US20120318341A1
公开(公告)日：2012-12-20
申请号：US13159897
申请日：2011-06-14
申请人： Kathryn C. Fisher , Qiang Huang , Satyavolu S. Papa Rao , David L. Rath
发明人： Kathryn C. Fisher , Qiang Huang , Satyavolu S. Papa Rao , David L. Rath
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/0201 , H01L31/0216 , H01L31/02167 , H01L31/022425 , H01L31/022433 , H01L31/18 , H01L31/1864 , Y02E10/50
摘要： Processes for fabricating photovoltaic devices in which the front side contact metal semiconductor alloy metallization patterns have a uniform thickness at edge portions as well as a central portion of each metallization pattern are provided. In one embodiment, a method of forming a photovoltaic device is provided that includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one on top of the other, wherein an upper exposed surface of one of the semiconductor portions represents a front side surface of the semiconductor substrate; forming a plurality of patterned antireflective coating layers on the front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger regions; forming a mask atop the plurality of patterned antireflective coating layers, the mask having a shape that mimics each patterned antireflective coating; electrodepositing a metal layer on the busbar region and the finger regions; removing the mask; and performing an anneal, wherein during the anneal metal atoms from the metal layer react with semiconductor atoms from the busbar region and the finger regions forming a metal semiconductor alloy.
摘要翻译：提供了其中前侧接触金属半导体合金金属化图案在边缘部分具有均匀厚度以及每个金属化图案的中心部分的光伏器件的制造方法。在一个实施例中，提供了一种形成光伏器件的方法，该方法包括：pn结与p型半导体部分和n型半导体部分之间，其中一个半导体部分的上部暴露表面表示半导体衬底的前侧表面; 在所述半导体表面的前侧表面上形成多个图案化的抗反射涂层，以提供包括汇流条区域和手指区域的网格图案; 在所述多个图案化的抗反射涂层之上形成掩模，所述掩模具有模仿每个图案化抗反射涂层的形状; 在母线区域和手指区域上电沉积金属层; 去除面膜; 并执行退火，其中在退火期间，来自金属层的金属原子与母线区域的半导体原子和形成金属半导体合金的指状区域反应。

6. 发明授权

US08293643B2 Method and structure of forming silicide and diffusion barrier layer with direct deposited film on silicon 有权
标题翻译：在硅上直接沉积薄膜形成硅化物和扩散阻挡层的方法和结构
公开(公告)号：US08293643B2
公开(公告)日：2012-10-23
申请号：US12819634
申请日：2010-06-21
申请人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L21/477
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译：具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。

7. 发明授权

US08969122B2 Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom 有权
标题翻译：用于前侧接触金属化的均匀金属半导体合金形成工艺和由其形成的光电器件
公开(公告)号：US08969122B2
公开(公告)日：2015-03-03
申请号：US13159897
申请日：2011-06-14
申请人： Kathryn C. Fisher , Qiang Huang , Satyavolu S. Papa Rao , David L. Rath
发明人： Kathryn C. Fisher , Qiang Huang , Satyavolu S. Papa Rao , David L. Rath
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/0224
CPC分类号： H01L31/02168 , H01L31/0201 , H01L31/0216 , H01L31/02167 , H01L31/022425 , H01L31/022433 , H01L31/18 , H01L31/1864 , Y02E10/50
摘要： Processes for fabricating photovoltaic devices in which the front side contact metal semiconductor alloy metallization patterns have a uniform thickness at edge portions as well as a central portion of each metallization pattern are provided. In one embodiment, a method of forming a photovoltaic device is provided that includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one on top of the other, wherein an upper exposed surface of one of the semiconductor portions represents a front side surface of the semiconductor substrate; forming a plurality of patterned antireflective coating layers on the front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger regions; forming a mask atop the plurality of patterned antireflective coating layers, the mask having a shape that mimics each patterned antireflective coating; electrodepositing a metal layer on the busbar region and the finger regions; removing the mask; and performing an anneal, wherein during the anneal metal atoms from the metal layer react with semiconductor atoms from the busbar region and the finger regions forming a metal semiconductor alloy.
摘要翻译：提供了其中前侧接触金属半导体合金金属化图案在边缘部分具有均匀厚度以及每个金属化图案的中心部分的光伏器件的制造方法。在一个实施例中，提供了一种形成光伏器件的方法，该方法包括：pn结与p型半导体部分和n型半导体部分之间，其中一个半导体部分的上部暴露表面表示半导体衬底的前侧表面; 在所述半导体表面的前侧表面上形成多个图案化的抗反射涂层，以提供包括汇流条区域和手指区域的网格图案; 在所述多个图案化的抗反射涂层之上形成掩模，所述掩模具有模仿每个图案化抗反射涂层的形状; 在母线区域和手指区域上电沉积金属层; 去除面膜; 并执行退火，其中在退火期间，来自金属层的金属原子与母线区域的半导体原子和形成金属半导体合金的指状区域反应。

8. 发明申请

US20130001784A1 METHOD AND STRUCTURE OF FORMING SILICIDE AND DIFFUSION BARRIER LAYER WITH DIRECT DEPOSITED FILM ON SI 审中-公开
标题翻译：形成硅胶和扩散阻挡层的方法和结构与直接沉积膜在SI
公开(公告)号：US20130001784A1
公开(公告)日：2013-01-03
申请号：US13611363
申请日：2012-09-12
申请人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L23/48
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译：具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。

9. 发明申请

US20110309508A1 Method and Structure of Forming Silicide and Diffusion Barrier Layer With Direct Deposited Film on Silicon 有权
标题翻译：在硅上形成具有直接沉积膜的硅化物和扩散阻挡层的方法和结构
公开(公告)号：US20110309508A1
公开(公告)日：2011-12-22
申请号：US12819634
申请日：2010-06-21
申请人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L23/485 , H01L21/768
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译：具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。

10. 发明授权

US09246024B2 Photovoltaic device with aluminum plated back surface field and method of forming same 有权
标题翻译：具有镀铝后表面场的光伏器件及其形成方法
公开(公告)号：US09246024B2
公开(公告)日：2016-01-26
申请号：US13182880
申请日：2011-07-14
申请人： Kathryn C. Fisher , Qiang Huang , Satyavolu S. Papa Rao , Ming-Ling Yeh
发明人： Kathryn C. Fisher , Qiang Huang , Satyavolu S. Papa Rao , Ming-Ling Yeh
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/068
CPC分类号： H01L31/022425 , H01L31/068 , Y02E10/547
摘要： A photovoltaic device is provided that includes a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one on top of the other. A plurality of patterned antireflective coating layers is located on a p-type semiconductor surface of the semiconductor substrate, wherein at least one portion of the p-type semiconductor surface of the semiconductor substrate is exposed. Aluminum is located directly on the at least one portion of the p-type semiconductor surface of the semiconductor substrate that is exposed.
摘要翻译：提供一种光电器件，其包括半导体衬底，该半导体衬底包括具有p型半导体部分的p-n结和在另一个顶部上的n型半导体部分。多个图案化抗反射涂层位于半导体衬底的p型半导体表面上，其中露出半导体衬底的p型半导体表面的至少一部分。铝直接位于暴露的半导体衬底的p型半导体表面的至少一部分上。

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