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1. 发明授权

US08492899B2 Method to electrodeposit nickel on silicon for forming controllable nickel silicide 有权
标题翻译：在镍上电沉积镍以形成可控硅化镍的方法
公开(公告)号：US08492899B2
公开(公告)日：2013-07-23
申请号：US12904597
申请日：2010-10-14
申请人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Xiaoyan Shao
发明人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Xiaoyan Shao
IPC分类号： H01L29/40 , H01L23/52 , H01L23/48 , H01L21/44
CPC分类号： H01L21/324 , H01L21/28518 , H01L21/2885 , H01L31/022425 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present disclosure relates to an improved method of providing a Ni silicide metal contact on a silicon surface by electrodepositing a Ni film on a silicon substrate. The improved method results in a controllable silicide formation wherein the silicide has a uniform thickness. The metal contacts may be incorporated in, for example, CMOS devices, MEM (micro-electro-mechanical) devices, and photovoltaic cells.
摘要翻译：本公开涉及通过在硅衬底上电沉积Ni膜而在硅表面上提供Ni硅化物金属接触的改进方法。改进的方法导致可控硅化物形成，其中硅化物具有均匀的厚度。金属触点可以结合在例如CMOS器件，MEM（微电机械）器件和光伏电池中。

2. 发明授权

US08293643B2 Method and structure of forming silicide and diffusion barrier layer with direct deposited film on silicon 有权
标题翻译：在硅上直接沉积薄膜形成硅化物和扩散阻挡层的方法和结构
公开(公告)号：US08293643B2
公开(公告)日：2012-10-23
申请号：US12819634
申请日：2010-06-21
申请人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L21/477
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译：具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。

3. 发明授权

US08604337B2 Method to evaluate effectiveness of substrate cleanness and quantity of pin holes in an antireflective coating of a solar cell 有权
标题翻译：评估太阳能电池抗反射涂层中基体清洁效果和针孔数量的方法
公开(公告)号：US08604337B2
公开(公告)日：2013-12-10
申请号：US13604230
申请日：2012-09-05
申请人： John M. Cotte , Laura L. Kosbar , Deborah A. Neumayer , Xiaoyan Shao
发明人： John M. Cotte , Laura L. Kosbar , Deborah A. Neumayer , Xiaoyan Shao
IPC分类号： H01L31/0236
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method to determine the cleanness of a semiconductor substrate and the quantity/density of pin holes that may exist within a patterned antireflective coating (ARC) is provided. Electroplating is employed to monitor the changes in the porosity of the ARC caused by the pin holes during solar cell manufacturing. In particular, electroplating a metal or metal alloy to form a metallic grid on an exposed front side surface of a substrate also fills the pin holes. The quantity/density of metallic filled pin holes (and hence the number of pin holes) in the patterned ARC can then be determined.
摘要翻译：提供了确定半导体衬底的清洁度的方法以及可能存在于图案化抗反射涂层（ARC）内的针孔的数量/密度。使用电镀来监测由太阳能电池制造过程中的针孔引起的ARC孔隙度的变化。特别地，在基板的暴露的前侧表面上电镀金属或金属合金以形成金属网格也填充针孔。然后可以确定图案化的ARC中的金属填充针孔的数量/密度（以及因此的孔的数量）。

4. 发明申请

US20130001784A1 METHOD AND STRUCTURE OF FORMING SILICIDE AND DIFFUSION BARRIER LAYER WITH DIRECT DEPOSITED FILM ON SI 审中-公开
标题翻译：形成硅胶和扩散阻挡层的方法和结构与直接沉积膜在SI
公开(公告)号：US20130001784A1
公开(公告)日：2013-01-03
申请号：US13611363
申请日：2012-09-12
申请人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L23/48
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译：具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。

5. 发明申请

US20110309508A1 Method and Structure of Forming Silicide and Diffusion Barrier Layer With Direct Deposited Film on Silicon 有权
标题翻译：在硅上形成具有直接沉积膜的硅化物和扩散阻挡层的方法和结构
公开(公告)号：US20110309508A1
公开(公告)日：2011-12-22
申请号：US12819634
申请日：2010-06-21
申请人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, JR. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L23/485 , H01L21/768
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译：具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。

6. 发明申请

US20110253545A1 METHOD OF DIRECT ELECTRODEPOSITION ON SEMICONDUCTORS 审中-公开
标题翻译：直接电沉积在半导体上的方法
公开(公告)号：US20110253545A1
公开(公告)日：2011-10-20
申请号：US12762665
申请日：2010-04-19
申请人： Laura L. Kosbar , Xiaoyan Shao
发明人： Laura L. Kosbar , Xiaoyan Shao
IPC分类号： C25D7/12 , C25D5/02
CPC分类号： C25D7/123 , C25D3/12 , C25D3/562 , C25D5/024 , C25D5/18 , H01L31/022425 , Y02E10/50
摘要： The present disclosure provides a method of electrodeposition of a metal or metal alloy on at least one surface of a semiconductor material. The method of the present invention provides full coverage of an electrodeposited metallic film on the at least one surface of the semiconductor material. The method of the present disclosure includes providing a semiconductor material. A metallic film is applied to at least one surface of the semiconductor material by an electrodeposition process. The electrodeposition process employed uses current waveforms that apply a low current density initially, and after a predetermined period of time, the current density is changed to a high current density.
摘要翻译：本公开提供了一种在半导体材料的至少一个表面上电沉积金属或金属合金的方法。本发明的方法提供了半导体材料的至少一个表面上的电沉积金属膜的完全覆盖。本公开的方法包括提供半导体材料。通过电沉积工艺将金属膜施加到半导体材料的至少一个表面。使用的电沉积工艺使用最初施加低电流密度的电流波形，并且在预定时间段之后，将电流密度改变为高电流密度。

7. 发明申请

US20080318157A1 RADIATION SENSITIVE SELF-ASSEMBLED MONOLAYERS AND USES THEREOF 有权
标题翻译：辐射敏感自组装单体及其用途
公开(公告)号：US20080318157A1
公开(公告)日：2008-12-25
申请号：US12199607
申请日：2008-08-27
申请人： Ali Afzali-Ardankani , Cherie R. Kagan , Laura L. Kosbar , Sally A. Swanson , Charan Srinivasan
发明人： Ali Afzali-Ardankani , Cherie R. Kagan , Laura L. Kosbar , Sally A. Swanson , Charan Srinivasan
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： C23C22/02 , B82Y10/00 , G03F7/165 , G03F7/405
摘要： The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.
摘要翻译：本发明涉及一种辐射敏感化合物，其包含接近化合物一端的表面结合基团，用于连接至底物，以及靠近化合物相对端的金属结合基团。金属结合组不辐射敏感。辐射敏感化合物还包括设置在表面结合基团和金属结合基团之间的主体部分和位于主体部分中或与金属结合基团相邻的辐射敏感组。表面结合基团能够附着于选自金属，金属氧化物或半导体材料的基板。

8. 发明授权

US06377233B2 Micromechanical display and fabrication method 失效
标题翻译：微机械显示和制造方法
公开(公告)号：US06377233B2
公开(公告)日：2002-04-23
申请号：US09918249
申请日：2001-07-30
申请人： Evan G. Colgan , Laura L. Kosbar , Alan E. Rosenbluth
发明人： Evan G. Colgan , Laura L. Kosbar , Alan E. Rosenbluth
IPC分类号： G09G334
CPC分类号： G09G3/3433 , G02B26/0841 , G09G3/346 , G09G2300/0473 , G09G2300/08 , Y10S359/90
摘要： A display device, in accordance with the present invention includes a transparent substrate and an array of pixels formed on the substrate, each pixel comprises a transparent electrode and a deformable member electrically actuated between a first state and a second state, wherein in the first state a liquid including a dye is disposed in a gap between the transparent electrode and the deformable member and wherein in the second state the deformable member reduces the gap between the transparent electrode and the deformable member such that the liquid is substantially removed between the deformable layer and the transparent electrode in the area of contact. A plurality of switches are formed on the substrate for supplying control signals to the array of pixels to selectively actuate the deformable members of the pixels, wherein each switch comprises an actuating member movable between an active state and an inactive state, whereby in the active state any control signal supplied to the switch passes through the switch, and in the inactive state any control signal supplied to the switch is prevented from passing through the switch. Fabrication methods are also disclosed.
摘要翻译：根据本发明的显示装置包括透明基板和形成在基板上的像素阵列，每个像素包括在第一状态和第二状态之间电致动的透明电极和可变形部件，其中在第一状态包括染料的液体设置在透明电极和可变形部件之间的间隙中，并且其中在第二状态下，可变形部件减小了透明电极和可变形部件之间的间隙，使得液体在可变形层和透明电极在接触区域。多个开关形成在基板上，用于向像素阵列提供控制信号以选择性地致动像素的可变形构件，其中每个开关包括可在活动状态和非活动状态之间移动的致动构件，由此在活动状态提供给开关的任何控制信号通过开关，并且在非活动状态下，防止提供给开关的任何控制信号通过开关。还公开了制造方法。

9. 发明授权

US08889537B2 Implantless dopant segregation for silicide contacts 有权
标题翻译：用于硅化物接触的无植入物掺杂剂分离
公开(公告)号：US08889537B2
公开(公告)日：2014-11-18
申请号：US12833272
申请日：2010-07-09
申请人： Cryil Cabral, Jr. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
发明人： Cryil Cabral, Jr. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
IPC分类号： H01L21/28 , H01L21/285 , H01L29/45
CPC分类号： H01L21/28512 , H01L21/28518 , H01L29/456
摘要： A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer.
摘要翻译：在半导体材料和硅化物层之间的结处形成分离的界面掺杂剂层的方法包括在半导体材料上沉积掺杂的金属层; 退火所述掺杂金属层和所述半导体材料，其中所述退火使所述掺杂金属层的一部分和所述半导体材料的一部分反应以在所述半导体材料上形成所述硅化物层，并且其中所述退火还导致所述分离的界面掺杂剂层，以形成在半导体材料和硅化物层之间，分离的界面掺杂剂层包含来自掺杂金属层的掺杂剂; 以及从所述硅化物层去除所述掺杂金属层的未反应部分。

10. 发明申请

US20120009771A1 Implantless Dopant Segregation for Silicide Contacts 有权
标题翻译：用于硅胶接触的无植入物掺杂剂分离
公开(公告)号：US20120009771A1
公开(公告)日：2012-01-12
申请号：US12833272
申请日：2010-07-09
申请人： Cyril Cabral, JR. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
发明人： Cyril Cabral, JR. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
IPC分类号： H01L21/3205
CPC分类号： H01L21/28512 , H01L21/28518 , H01L29/456
摘要： A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer.
摘要翻译：在半导体材料和硅化物层之间的结处形成分离的界面掺杂剂层的方法包括在半导体材料上沉积掺杂的金属层; 退火所述掺杂金属层和所述半导体材料，其中所述退火使所述掺杂金属层的一部分和所述半导体材料的一部分反应以在所述半导体材料上形成所述硅化物层，并且其中所述退火还导致所述分离的界面掺杂剂层，以形成在半导体材料和硅化物层之间，分离的界面掺杂剂层包含来自掺杂金属层的掺杂剂; 以及从所述硅化物层去除所述掺杂金属层的未反应部分。

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